公开(公告)号：US20200185203A1

公开(公告)日：2020-06-11

申请号：US16212580

申请日：2018-12-06

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Xiao Ming He ,  Jennifer Y. Sun ,  Xiaowei Wu ,  Laksheswar Kalita ,  Soonam Park

IPC: H01J37/32 ,  C23C16/458 ,  C23C16/46

Abstract: A substrate support assembly includes a ground shield and a heater that is surrounded by the ground shield. The ground shield includes a plate. In one embodiment, the ground shield is composed of a ceramic body and includes an electrically conductive layer, a first protective layer on the upper surface of the plate. In another embodiment, the ground shield is composed of an electrically conductive body and a first protective layer on the upper surface of the plate.

公开(公告)号：US20200090907A1

公开(公告)日：2020-03-19

申请号：US16134200

申请日：2018-09-18

Applicant: Applied Materials, Inc.

Inventor： Junghoon Kim ,  Tae Cho ,  Theodore Wou ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01J37/32 ,  C23C16/513 ,  H01J37/305 ,  H01L21/3065

Abstract: Systems and methods may be used to enact plasma tuning. Exemplary semiconductor processing chambers may include a pedestal positioned within the chamber and configured to support a substrate. The pedestal may include an electrode operable to form a plasma within a processing region of the semiconductor processing chamber, with the processing region at least partially defined by the pedestal. The pedestal may include a heater embedded within the pedestal, and the heater may be coupled with a power supply. An RF filter may be coupled between the power supply and the heater. A shunt capacitor may also be coupled between the RF filter and the heater.

公开(公告)号：US10593560B2

公开(公告)日：2020-03-17

申请号：US15909812

申请日：2018-03-01

Applicant: Applied Materials, Inc.

Inventor： Tae Seung Cho ,  Soonwook Jung ,  Junghoon Kim ,  Satoru Kobayashi ,  Kenneth D. Schatz ,  Soonam Park ,  Dmitry Lubomirsky

IPC: C23C16/00 ,  H01L21/316 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/3105 ,  H01J37/32 ,  H05H1/46

Abstract: Exemplary magnetic induction plasma systems for generating plasma products are provided. The magnetic induction plasma system may include a first plasma source including a plurality of first sections and a plurality of second sections arranged in an alternating manner and fluidly coupled with each other such that at least a portion of plasma products generated inside the first plasma source may circulate through at least one of the plurality of first sections and at least one of the plurality of second sections inside the first plasma source. Each of the plurality of second sections may include a dielectric material. The system may further include a plurality of first magnetic elements each of which may define a closed loop. Each of the plurality of second sections may define a plurality of recesses for receiving one of the plurality of first magnetic elements therein.

公开(公告)号：US20200066556A1

公开(公告)日：2020-02-27

申请号：US16673296

申请日：2019-11-04

Applicant: Applied Materials, Inc.

Inventor： David Benjaminson ,  Dmitry Lubomirsky

IPC: H01L21/67 ,  H01L21/324 ,  H01L21/687 ,  H01L21/66

Abstract: A workpiece holder includes a puck having a cylindrical axis, a radius about the cylindrical axis, and a thickness. At least a top surface of the puck is substantially planar, and the puck defines one or more thermal breaks. Each thermal break is a radial recess that intersects at least one of the top surface and a bottom surface of the cylindrical puck. The radial recess has a thermal break depth that extends through at least half of the puck thickness, and a thermal break radius that is at least one-half of the puck radius. A method of processing a wafer includes processing the wafer with a first process that provides a first center-to-edge process variation, and subsequently, processing the wafer with a second process that provides a second center-to-edge process variation that substantially compensates for the first center-to-edge process variation.

公开(公告)号：US10550472B2

公开(公告)日：2020-02-04

申请号：US14481774

申请日：2014-09-09

Applicant: Applied Materials, Inc.

Inventor： Kien N. Chuc ,  Qiwei Liang ,  Hanh D. Nguyen ,  Xinglong Chen ,  Matthew Miller ,  Soonam Park ,  Toan Q. Tran ,  Adib Khan ,  Jang-Gyoo Yang ,  Dmitry Lubomirsky ,  Shankar Venkataraman

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/452

Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

公开(公告)号：US10546729B2

公开(公告)日：2020-01-28

申请号：US15285331

申请日：2016-10-04

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/455 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505

Abstract: Described processing chambers may include a chamber housing at least partially defining an interior region of the semiconductor processing chamber. The chambers may include a pedestal. The chambers may include a first showerhead positioned between the lid and the processing region, and may include a faceplate positioned between the first showerhead and the processing region. The chambers may also include a second showerhead positioned within the chamber between the faceplate and the processing region of the semiconductor processing chamber. The second showerhead may include at least two plates coupled together to define a volume between the at least two plates. The at least two plates may at least partially define channels through the second showerhead, and each channel may be characterized by a first diameter at a first end of the channel and may be characterized by a plurality of ports at a second end of the channel.

公开(公告)号：US10541113B2

公开(公告)日：2020-01-21

申请号：US16291494

申请日：2019-03-04

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky

IPC: H01J37/30 ,  H01L21/30 ,  H01J37/305 ,  H01J37/317 ,  H01J37/32 ,  H01L21/3065

Abstract: Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber may include a showerhead positioned within the chamber housing, and the showerhead may at least partially divide the interior region into a remote region and a processing region in which a substrate can be contained. The chamber may also include an inductively coupled plasma source positioned between the showerhead and the processing region. The inductively coupled plasma source may include a conductive material within a dielectric material.

公开(公告)号：US10460915B2

公开(公告)日：2019-10-29

申请号：US15582282

申请日：2017-04-28

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Kirby Hane Floyd ,  Hiroji Hanawa ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01L21/687 ,  H01J37/32 ,  H02K7/14

Abstract: A substrate support assembly includes a shaft assembly, a pedestal coupled to a portion of the shaft assembly, and a first rotary connector coupled to the shaft assembly, wherein the first rotary connector comprises a first coil member surrounding a rotatable shaft member that is electrically coupled to the shaft assembly, the first coil member being rotatable with the rotatable shaft, and a second coil member surrounding the first coil member, the second coil member being stationary relative to the first coil member, wherein the first coil member electrically couples with the second coil member when the rotating radio frequency applicator is energized and provides a radio frequency signal/power to the pedestal through the shaft assembly.

公开(公告)号：US20180366378A1

公开(公告)日：2018-12-20

申请号：US15625454

申请日：2017-06-16

Applicant: Applied Materials, Inc.

Inventor： Junghoon Kim ,  Soonam Park ,  Tae Seung Cho ,  Dmitry Lubomirsky ,  Nikolai Kalnin

IPC: H01L21/66 ,  H01L21/67 ,  H01J37/32 ,  C23C16/513

Abstract: Methods of monitoring a plasma while processing a semiconductor substrate are described. In embodiments, the methods include determining the difference in power between the power delivered from the plasma power supply and the power received by the plasma in a substrate processing chamber. The power received may be determined using a V/I sensor positioned after the matching circuit. The power reflected or the power lost is the difference between the delivered power and the received power. The process may be terminated by removing the delivered power if the reflected power is above a setpoint. The VRF may further be fourier transformed into frequency space and compared to the stored fourier transform of a healthy plasma process. Missing frequencies from the VRF fourier transform may independently or further indicate an out-of-tune plasma process and the process may be terminated.

公开(公告)号：US20180330923A1

公开(公告)日：2018-11-15

申请号：US15965794

申请日：2018-04-27

Applicant: Applied Materials, Inc.

Inventor： Toan Tran ,  Laksheswar Kalita ,  Tae Won Kim ,  Dmitry Lubomirsky ,  Xiaowei Wu ,  Xiao-Ming He ,  Cheng-Hsuan Chou ,  Jennifer Y. Sun

IPC: H01J37/32 ,  C23C16/40

Abstract: A method of applying a multi-layer plasma resistant coating on an article comprises performing plating or ALD to form a conformal first plasma resistant layer on an article, wherein the conformal first plasma resistant layer is formed on a surface of the article and on walls of high aspect ratio features in the article. The conformal first plasma resistant coating has a porosity of approximately 0% and a thickness of approximately 200 nm to approximately 1 micron. One of electron beam ion assisted deposition (EB-IAD), plasma enhanced chemical vapor deposition (PECVD), aerosol deposition or plasma spraying is then performed to form a second plasma resistant layer that covers the conformal first plasma resistant layer at a region of the surface but not at the walls of the high aspect ratio features.