公开(公告)号：US09646807B2

公开(公告)日：2017-05-09

申请号：US14456146

申请日：2014-08-11

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Qiwei Liang

IPC: C23C16/00 ,  B43M3/00 ,  F16L39/00 ,  F16L41/00 ,  F16L45/00 ,  F16L51/00 ,  H01J37/32

CPC classification number: H01J37/32816 ,  H01J37/32513 ,  Y10T428/24479

Abstract: In one embodiment, a surface having a sealing groove formed therein. The sealing groove is configured to accept an elastomeric seal. The sealing groove includes a first portion having a full dovetail profile and at least on a second portion having a half dovetail profile.

公开(公告)号：US20160276150A1

公开(公告)日：2016-09-22

申请号：US15073444

申请日：2016-03-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Jun Xue ,  Ludovic Godet ,  Srinivas Nemani ,  Michael W. Stowell ,  Qiwei Liang ,  Douglas A. Buchberger

IPC: H01L21/02

CPC classification number: H01L21/02274 ,  H01L21/0217 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76831

Abstract: Methods of processing a substrate are provided herein. In some embodiments, a method of processing a substrate disposed in a processing chamber includes: (a) depositing a layer of material on a substrate by exposing the substrate to a first reactive species generated from a remote plasma source and to a first precursor, wherein the first reactive species reacts with the first precursor; and (b) treating all, or substantially all, of the deposited layer of material by exposing the substrate to a plasma generated within the processing chamber from a second plasma source; wherein at least one of the remote plasma source or the second plasma source is pulsed to control periods of depositing and periods of treating.

Abstract translation: 本文提供了处理基板的方法。 在一些实施例中，处理设置在处理室中的衬底的方法包括：（a）通过将衬底暴露于从远程等离子体源产生的第一反应物质和第一前体而在衬底上沉积材料层，其中 第一活性物质与第一前体反应; 和（b）通过将衬底暴露于处理室内从等离子体源产生的等离子体处理所有或基本上全部沉积的材料层; 其中所述远程等离子体源或所述第二等离子体源中的至少一个被脉冲以控制沉积周期和处理周期。

公开(公告)号：US20160005572A1

公开(公告)日：2016-01-07

申请号：US14853838

申请日：2015-09-14

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Xinglong Chen ,  Kien Chuc ,  Dimitry Lubomirsky ,  Soonam Park ,  Jang-Gyoo Yang ,  Shankar Venkataraman ,  Toan Tran ,  Kimberly Hinckley ,  Saurabh Garg

IPC: H01J37/32 ,  C23C16/455

CPC classification number: H01J37/32449 ,  B05B1/005 ,  B05B1/18 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45582 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/002 ,  H01L21/67069

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

Abstract translation: 描述了气体分配组件，其包括环形体，上板和下板。 上板可以限定第一多个孔，并且下板可以限定第二和第三多个孔。 上板和下板可以彼此耦合并且环形体使得第一和第二孔产生通过气体分配组件的通道，并且在上板和下板之间限定一个体积。

公开(公告)号：US20140261168A1

公开(公告)日：2014-09-18

申请号：US14162048

申请日：2014-01-23

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Ellie Y. Yieh ,  Juan Carlos Rocha-Alvarez ,  Russell Edward Perry

IPC: H01L21/67

CPC classification number: H01L21/67196 ,  H01L21/6719

Abstract: Embodiments of the present invention generally relate to a cluster tool for processing semiconductor substrates. In one embodiment, a cluster tool having four to six process chambers connected to a transfer chamber and each process chamber may simultaneously process two or three substrates.

Abstract translation: 本发明的实施例一般涉及用于处理半导体衬底的簇工具。 在一个实施例中，具有连接到传送室和每个处理室的四至六个处理室的簇工具可以同时处理两个或三个基板。

公开(公告)号：US20140097270A1

公开(公告)日：2014-04-10

申请号：US13799840

申请日：2013-03-13

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Xinglong Chen ,  Kien Chuc ,  Dmitry Lubomirsky ,  Soonam Park ,  Jang-Gyoo Yang ,  Shankar Venkataraman ,  Toan Tran ,  Kimberly Hinckley ,  Saurabh Garg

IPC: B05B1/00

CPC classification number: H01J37/32449 ,  B05B1/005 ,  B05B1/18 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45582 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/002 ,  H01L21/67069

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

Abstract translation: 描述了气体分配组件，其包括环形体，上板和下板。 上板可以限定第一多个孔，并且下板可以限定第二和第三多个孔。 上板和下板可以彼此耦合并且环形体使得第一和第二孔产生通过气体分配组件的通道，并且在上板和下板之间限定一个体积。

公开(公告)号：US20130306758A1

公开(公告)日：2013-11-21

申请号：US13669164

申请日：2012-11-05

Applicant: Applied Materials, Inc.

Inventor： Soonam Park ,  Kimberly Hinkley ,  Qiwei Liang ,  Jang-Gyoo Yang

IPC: B05B1/18

CPC classification number: B05B1/185 ,  C23C16/345 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45591 ,  C23C16/503 ,  C23C16/509 ,  C23C16/5096

Abstract: Showerheads are described including a first plurality of apertures configured to receive a first fluid that may be distributed to a processing region of a semiconductor substrate processing chamber. The first plurality of apertures may include a first set of apertures and a second set of apertures, and the first set of apertures may have an aperture diameter that is greater than the aperture diameter of the second set of apertures. The showerheads may also have a second plurality of apertures configured to receive a second fluid to be distributed to the processing region of the substrate processing chamber. The showerhead may be configured to maintain the first and second fluids fluidly isolated prior to their distribution to the processing region.

Abstract translation: 描述的喷头包括构造成接收可分配到半导体衬底处理室的处理区域的第一流体的第一多个孔。 第一组多个孔可以包括第一组孔和第二组孔，并且第一组孔可以具有大于第二组孔的孔直径的孔直径。 淋浴喷头还可以具有第二多个孔，其构造成接收要分配到基板处理室的处理区域的第二流体。 淋浴头可以被配置为在被分配到处理区域之前将第一和第二流体保持流体隔离。