公开(公告)号：US20090053901A1

公开(公告)日：2009-02-26

申请号：US12251305

申请日：2008-10-14

Applicant: Haruhiro Harry Goto ,  David Cheung

Inventor： Haruhiro Harry Goto ,  David Cheung

IPC: H01L21/3065 ,  C23F1/00

CPC classification number: H01L21/02041 ,  C01B3/00 ,  C01B7/20 ,  H01J37/32357 ,  H01J2237/3342 ,  H01L21/31138 ,  H01L21/67017

Abstract: Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine containing gas. An inert gas is introduced to the plasma downstream of the plasma source and upstream of a showerhead that directs gas mixture into the reaction chamber where the mixture reacts with the high-dose implant resist. The process removes both the crust and bulk resist layers at a high strip rate, and leaves the work piece surface substantially residue free with low silicon loss.

Abstract translation: 使用元素氢，弱氧化剂和含氟气体产生等离子体。 将惰性气体引入到等离子体源的下游等离子体源和喷淋头的上游，该喷头将气体混合物引导到反应室中，其中混合物与高剂量植入物抗蚀剂反应。 该方法以高剥离速率移除外壳和体抗蚀剂层，并且以低的硅损耗使工件表面基本上无残留物。

公开(公告)号：US20080156631A1

公开(公告)日：2008-07-03

申请号：US11616326

申请日：2006-12-27

Applicant: James A. Fair ,  Vincent Decaux ,  Anirban Guha ,  David Cheung ,  John Keller ,  Peter Jagusch

Inventor： James A. Fair ,  Vincent Decaux ,  Anirban Guha ,  David Cheung ,  John Keller ,  Peter Jagusch

IPC: H05H1/00

CPC classification number: H05H1/46 ,  H01J37/32357 ,  H01J37/32458

Abstract: Methods of using a plasma generator to ash a work piece is provided. In an exemplary embodiment, the method includes flowing gas that has a gaseous component able to form plasma under conditions of radio-frequency energy excitation into the container. A proportion of the gas is directed to a first region of the container to form a higher gas density in the first region of the container and a corresponding lower gas density in a second region of the container. Sufficient energy is applied to the gas in at least the first region to excite a proportion of the gaseous component able to form plasma.

Abstract translation: 提供了使用等离子体发生器来灰化工件的方法。 在示例性实施例中，该方法包括使气体具有能够在射频能量激发的条件下形成等离子体的气体成分进入容器。 气体的一部分被引导到容器的第一区域，以在容器的第一区域中形成更高的气体密度，并且在容器的第二区域中形成相应较低的气体密度。 在至少第一区域中对气体施加足够的能量以激发能够形成等离子体的一部分气态组分。

公开(公告)号：US20080077252A1

公开(公告)日：2008-03-27

申请号：US11949687

申请日：2007-12-03

Applicant: C. Mills ,  John Bianchi ,  Michael Roberts ,  David Cheung ,  Chandrasekaran Nataraj ,  John Howell

Inventor： C. Mills ,  John Bianchi ,  Michael Roberts ,  David Cheung ,  Chandrasekaran Nataraj ,  John Howell

IPC: A61F2/02

CPC classification number: A61L27/3608 ,  A61F2/08 ,  A61F2/105 ,  A61F2002/0894 ,  A61L27/3604 ,  A61L27/3687 ,  A61L27/3691 ,  A61L27/38 ,  A61L27/3826 ,  A61L27/46 ,  A61L27/54 ,  A61L27/56 ,  A61L2300/414 ,  A61L2400/06 ,  A61L2430/02 ,  A61L2430/10 ,  A61L2430/30 ,  B33Y80/00

Abstract: The present invention is directed to a composition comprising a matrix suitable for implantation in humans, comprising defatted, shredded, allogeneic human muscle tissue that has been combined with an aqueous carrier and dried in a predetermined shape. Also disclosed is a tissue graft or implant comprising a matrix suitable for implantation in humans, comprising defatted, shredded, allogeneic human muscle tissue that has been combined with an aqueous carrier and dried in a predetermined shape. The composition and/or tissue graft or implant of the invention is usable in combination with seeded cells, a tissue growth factor, and/or a chemotactic agent to attract a desired cell.

Abstract translation: 本发明涉及一种包含适合于植入人体的基质的组合物，其包含已经与水性载体组合并且以预定形状干燥的脱脂，切碎的同种异体人肌肉组织。 还公开了一种组织移植物或植入物，其包含适合于植入人体的基质，其包含已经与水性载体组合并且以预定形状干燥的脱脂，切碎的同种异体人类肌肉组织。 本发明的组合物和/或组织移植物或植入物可与接种的细胞，组织生长因子和/或趋化剂组合以吸引期望的细胞。

公开(公告)号：US20080064225A1

公开(公告)日：2008-03-13

申请号：US11877483

申请日：2007-10-23

Applicant: Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

Inventor： Wai-Fan Yau ,  David Cheung ,  Shin-Puu Jeng ,  Kuowei Liu ,  Yung-Cheng Yu

IPC: H01L21/469

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  H01L21/76837

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

公开(公告)号：US20080002606A1

公开(公告)日：2008-01-03

申请号：US11479104

申请日：2006-06-30

Applicant: David Cheung ,  David Bormann ,  Scott Ettinger

Inventor： David Cheung ,  David Bormann ,  Scott Ettinger

IPC: H04Q7/00

CPC classification number: H04W24/00 ,  H04W88/02

Abstract: A method and apparatus for identification of wireless devices based on signal characteristics. An embodiment of a method includes receiving a signal from a wireless device and generating a spectrogram of the received signal. The method further provides for identifying one or more regions of the spectrogram and processing the spectrogram to determine time, bandwidth, and density characteristics of the identified regions.

Abstract translation: 一种基于信号特征识别无线设备的方法和装置。 一种方法的实施例包括从无线设备接收信号并产生接收信号的频谱图。 该方法还提供用于识别光谱图的一个或多个区域并处理光谱图以确定所识别区域的时间，带宽和密度特性。

公开(公告)号：US07070657B1

公开(公告)日：2006-07-04

申请号：US09418818

申请日：1999-10-15

Applicant: David Cheung ,  Joe Feng ,  Judy H. Huang ,  Wai-Fan Yau

Inventor： David Cheung ,  Joe Feng ,  Judy H. Huang ,  Wai-Fan Yau

IPC: C23C16/52 ,  C23F1/00 ,  H01L21/306

CPC classification number: G03F7/091

Abstract: This invention provides a stable process for depositing an antireflective layer. Helium gas is used to lower the deposition rate of plasma-enhanced silane oxide, silane oxynitride, and silane nitride processes. Helium is also used to stabilize the process, so that different films can be deposited. The invention also provides conditions under which process parameters can be controlled to produce antireflective layers with varying optimum refractive index, absorptive index, and thickness for obtaining the desired optical behavior.

Abstract translation: 本发明提供一种用于沉积抗反射层的稳定方法。 氦气用于降低等离子体增强硅烷氧化物，硅氮氧化物和氮化硅工艺的沉积速率。 氦也用于稳定工艺，使得可以沉积不同的膜。 本发明还提供了可以控制工艺参数以产生具有变化的最佳折射率，吸收指数和厚度以获得所需光学行为的抗反射层的条件。

公开(公告)号：US20060127495A1

公开(公告)日：2006-06-15

申请号：US11345769

申请日：2006-01-19

Applicant: David Cheung

Inventor： David Cheung

IPC: A61K35/34

CPC classification number: A01N1/02 ,  A01N1/0226 ,  A61K38/39 ,  A61L27/3604 ,  A61L27/3687

Abstract: The invention relates to a method of treatment of collagenous connective tissue removed from a donor for implant into a recipient which is re-habited or re-colonized by host cells without an immune rejection and inflammatory reaction. After removal from the donor, the tissue is trimmed and thereafter soaked in a cold stabilizing solution having a temperature range of 4 to 10 degrees centigrade. The tissue is then soaked at a predetermined temperature in a polyglycol, salt, hydrogen peroxide, and phosphate buffer first solution of predetermined quantities and concentrations and of sufficient ionic strength to permit ground substances to dissociate such that the collagen fibers remain stable. The tissue is then soaked in an alcohol and water solution at a predetermined temperature for a sufficient period of time to remove the residue of the first solution. Following the removal of the residue, the tissue is soaked at a predetermined temperature in a third solution of an anti-inflammatory agent, an anti-thrombic agent, alcohol, and water or sequentially in an anti-inflammatory agent, alcohol, and water solution, and then in an anti-thrombic agent, alcohol and water solution and thereafter stored.

Abstract translation: 本发明涉及一种治疗从供体移出的胶原结缔组织的方法，用于植入到受体中，其被宿主细胞重新吸收或重新定植而没有免疫排斥和炎症反应。 从供体中取出后，对组织进行修整，然后将其浸泡在温度范围为4至10摄氏度的冷稳定溶液中。 然后将组织在预定温度下浸入预定量和浓度的聚二醇，盐，过氧化氢和磷酸盐缓冲液第一溶液中并具有足够的离子强度，以使研磨物质解离，使得胶原纤维保持稳定。 然后将组织在预定温度下在醇和水溶液中浸泡足够的时间以除去第一溶液的残余物。 除去残留物后，将组织在预定温度下在抗炎剂，抗血栓剂，酒精和水的第三溶液中浸泡，或依次在抗炎剂，酒精和水溶液中浸泡 ，然后在抗血栓剂，酒精和水溶液中储存。

公开(公告)号：US06743737B2

公开(公告)日：2004-06-01

申请号：US10226717

申请日：2002-08-22

Applicant: Wai-Fan Yau ,  David Cheung ,  Nasreen Gazala Chopra ,  Yung-Cheng Lu ,  Robert Mandal ,  Farhad Moghadam

Inventor： Wai-Fan Yau ,  David Cheung ,  Nasreen Gazala Chopra ,  Yung-Cheng Lu ,  Robert Mandal ,  Farhad Moghadam

IPC: H01L2131

CPC classification number: H01L21/02211 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02359 ,  H01L21/3125 ,  H01L21/31633 ,  H01L21/76807

Abstract: A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.

Abstract translation: 用于沉积低介电常数膜的方法和装置包括沉积氧化硅基膜，优选通过有机硅化合物和氧化气体以约10W至约500W的低RF功率水平反应，暴露基于氧化硅的 膜与水或疏水赋予性表面活性剂如六甲基二硅氮烷，并在升高的温度下固化氧化硅基膜。 可以在单独的微波室中增加氧化气体的离解，以有助于控制沉积膜的碳含量。 氧化硅系膜的耐湿性提高。

公开(公告)号：US06689930B1

公开(公告)日：2004-02-10

申请号：US09608577

申请日：2000-06-30

Applicant: Ben Pang ,  David Cheung ,  William N. Taylor, Jr. ,  Sebastion Raoux ,  Mark Fodor

Inventor： Ben Pang ,  David Cheung ,  William N. Taylor, Jr. ,  Sebastion Raoux ,  Mark Fodor

IPC: B09B300

CPC classification number: H01J37/32862 ,  B01J19/249 ,  B01J2219/2453 ,  B01J2219/2458 ,  B01J2219/2461 ,  B01J2219/2467 ,  B01J2219/247 ,  B01J2219/2474 ,  B01J2219/2475 ,  B01J2219/2487 ,  B01J2219/2493 ,  B01J2219/2496 ,  C23C16/4405 ,  C23C16/4412 ,  Y02C20/30 ,  Y02P70/605

Abstract: An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to form excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.

Abstract translation: 一种用于防止半导体处理装置的真空排气管线内的颗粒物质和残渣积聚的装置。 该装置使用RF能量来形成从半导体处理室排出的颗粒物质的成分进入等离子体状态，使得这些组分反应以形成可被泵送通过真空管线的气态产物。 该装置可以包括收集室，该收集室被构造和布置成收集流过该装置的颗粒物质并且阻止颗粒物质从装置中流出。 该装置还可以包括静电收集器以增强收集室中的颗粒收集并进一步抑制颗粒物质的排出。

公开(公告)号：US06596655B1

公开(公告)日：2003-07-22

申请号：US09957681

申请日：2001-09-19

Applicant: David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

Inventor： David Cheung ,  Wai-Fan Yau ,  Robert P. Mandal ,  Shin-Puu Jeng ,  Kuo-Wei Liu ,  Yung-Cheng Lu ,  Michael Barnes ,  Ralf B. Willecke ,  Farhad Moghadam ,  Tetsuya Ishikawa ,  Tze Wing Poon

IPC: H01L2131

CPC classification number: H01L21/76835 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02208 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L2221/1031 ,  Y10T428/24926 ,  Y10T428/31663

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10W to about 200W or a pulsed RF power level from about 20W to about 500W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, dimethylsilane, (CH3)2SiH2, or 1,1,3,3-tetramethyl-disiloxane, (CH3)2—SiH—O—SiH—(CH3)2, and nitrous oxide, N2O, at a constant RF power level from about 10W to about 150W, or a pulsed RF power level from about 20W to about 250W during 10% to 30% of the duty cycle.