公开(公告)号：US07880249B2

公开(公告)日：2011-02-01

申请号：US11290763

申请日：2005-11-30

申请人： Jun Yuan ,  Liubo Hong ,  Mao-Min Chen

发明人： Jun Yuan ,  Liubo Hong ,  Mao-Min Chen

IPC分类号： H01L29/82

CPC分类号： H01L43/12 ,  H01L27/222 ,  H01L43/08

摘要： Methods are presented for fabricating an MTJ element having a precisely controlled spacing between its free layer and a bit line and, in addition, having a protective spacer layer formed abutting the lateral sides of the MTJ element to eliminate leakage currents between MTJ layers and the bit line. Each method forms a dielectric spacer layer on the lateral sides of the MTJ element and, depending on the method, includes an additional layer that protects the spacer layer during etching processes used to form a Cu damascene bit line. At various stages in the process, a dielectric layer is also formed to act as a CMP stop layer so that the capping layer on the MTJ element is not thinned by the CMP process that planarizes the surrounding insulation. Subsequent to planarization, the stop layer is removed by an anisotropic etch of such precision that the MTJ element capping layer is not thinned and serves to maintain an exact spacing between the bit line and the MTJ free layer.

摘要翻译： 提出了用于制造在其自由层和位线之间具有精确控制的间隔的MTJ元件的方法，此外，具有邻接MTJ元件的侧面形成的保护性间隔层以消除MTJ层与钻头之间的泄漏电流 线。 每种方法在MTJ元件的侧面上形成电介质间隔层，并且根据该方法，包括在用于形成Cu镶嵌位线的蚀刻工艺期间保护间隔层的附加层。 在该过程的各个阶段，还形成介电层以用作CMP停止层，使得MTJ元件上的覆盖层不会通过使周围绝缘平坦化的CMP工艺变薄。 在平坦化之后，通过各向异性蚀刻去除停止层，其精度使得MTJ元件覆盖层不变薄并且用于保持位线和MTJ自由层之间的精确间隔。

公开(公告)号：US20060132988A1

公开(公告)日：2006-06-22

申请号：US11016506

申请日：2004-12-17

申请人： Kunliang Zhang ,  Mao-Min Chen ,  Chyu-Jiuh Torng ,  Min Li ,  Chen-Jung Chien

发明人： Kunliang Zhang ,  Mao-Min Chen ,  Chyu-Jiuh Torng ,  Min Li ,  Chen-Jung Chien

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032

摘要： A hard bias structure for biasing a free layer in a MR element within a magnetic read head is comprised of a soft magnetic underlayer such as NiFe and a hard bias layer comprised of Co78.6Cr5.2Pt16.2 or Co65Cr15Pt20 that are rigidly exchange coupled to ensure a well aligned longitudinal biasing direction with minimal dispersions. The hard bias structure is formed on a BCC seed layer such as CrTi to improve lattice matching. The hard bias structure may be laminated in which each of the underlayers and hard bias layers has a thickness that is adjusted to optimize the total HC, Mrt, and S values. The present invention encompasses CIP and CPP spin values, MTJ devices, and multi-layer sensors. A larger process window for fabricating the hard bias structure is realized and lower asymmetry output and NBLW reject rates during a read operation are achieved.

摘要翻译： 用于偏置磁读头内的MR元件中的自由层的硬偏压结构由诸如NiFe的软磁性底层和由Co ++ 78.6Cr 5.2构成的硬偏置层组成， 或刚性交换耦合以确保良好对准的/SUB>Pt_{16.2 或Co 15 Cr 15 纵向偏置方向最小分散。 在诸如CrTi的BCC种子层上形成硬偏压结构以改善晶格匹配。 可以层压硬偏压结构，其中每个底层和硬偏压层具有被调节以使总H C，M L t和S的最大化的厚度 价值观。 本发明包括CIP和CPP旋转值，MTJ装置和多层传感器。 实现了用于制造硬偏置结构的更大的工艺窗口，并且实现了读操作期间较低的不对称输出和NBLW废弃率。}

公开(公告)号：US06882509B2

公开(公告)日：2005-04-19

申请号：US10791021

申请日：2004-03-02

申请人： Jei-Wei Chang ,  Bernard Dieny ,  Mao-Min Chen ,  Cheng T. Horng ,  Kochan Ju ,  Simon Liao

发明人： Jei-Wei Chang ,  Bernard Dieny ,  Mao-Min Chen ,  Cheng T. Horng ,  Kochan Ju ,  Simon Liao

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01F10/00 ,  H01F10/06 ,  H01F10/12 ,  H01F10/14 ,  H01F10/16 ,  H01F10/18 ,  H01F10/30 ,  H01F10/32 ,  H01F41/30 ,  H01L43/08 ,  H01L43/12 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3272 ,  H01L43/08 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/1157 ,  Y10T428/1171 ,  Y10T428/12944 ,  Y10T428/2495

摘要： Disclosed is a method of making a SVGMR sensor element. In the first embodiment a buffer layer is formed between a seed layer and a ferromagnetic (FM) free layer, the buffer layer being composed of alpha-Fe2O3 having a crystal lattice constant that is close to the FM free layer's crystal constant and has the same crystal structure. The metal oxide buffer layer enhances the specular scattering. In the second embodiment, a high conductivity layer (HCL) is formed over the buffer layer to create a spin filter-SVGMR. The HCL layer enhances the GMR ratio of the spin filter SVGMR. The third embodiment include a pinned FM layer comprising a three layer structure of a lower AP layer, a space layer (e.g., Ru) and an upper AP layer.

摘要翻译： 公开了一种制造SVGMR传感器元件的方法。 在第一实施例中，在种子层和不含铁磁性（FM）的层之间形成缓冲层，该缓冲层由α-Fe 2 O 3 3 N 3 晶格常数接近于FM自由层的晶体常数，具有相同的晶体结构。 金属氧化物缓冲层增强了镜面散射。 在第二实施例中，在缓冲层上形成高电导率层（HCL）以产生自旋滤波器-GVGMR。 HCL层增强了旋转过滤器SVGMR的GMR比。 第三实施例包括包括下AP层的三层结构，空间层（例如Ru）和上AP层的钉扎FM层。

公开(公告)号：US06775903B2

公开(公告)日：2004-08-17

申请号：US09953546

申请日：2001-09-17

申请人： Cheng T. Horng ,  Kochan Ju ,  Mao-Min Chen ,  Min Li ,  Ru-Ying Tong ,  Simon Liao

发明人： Cheng T. Horng ,  Kochan Ju ,  Mao-Min Chen ,  Min Li ,  Ru-Ying Tong ,  Simon Liao

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3268 ,  H01F10/3295 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49039 ,  Y10T29/49044 ,  Y10T29/49055

摘要： A method for forming top and bottom spin valve sensors and the sensors so formed, the sensors having a strongly coupled SyAP pinned layer and an ultra-thin antiferromagnetic pinning layer. The two strongly coupled ferromagnetic layers comprising the SyAP pinned layer in the top valve configuration are separated by a Ru spacer layer approximately 3 angstroms thick, while the two layers in the bottom spin valve configuration are separated by a Rh spacer layer approximately 5 angstroms thick. This allows the use of an ultra thin MnPt antiferromagnetic pinning layer of thickness between approximately 80 and approximately 150 angstroms. The sensor structure produced thereby is suitable for high density applications.

摘要翻译： 用于形成顶部和底部自旋阀传感器和如此形成的传感器的方法，所述传感器具有强耦合的SyAP钉扎层和超薄反铁磁钉扎层。 包括顶阀配置中的SyAP钉扎层的两个强耦合铁磁层由大约3埃厚的Ru隔离层隔开，而底部自旋阀结构中的两个层被大约5埃厚的Rh间隔层隔开。 这允许使用厚度在大约80和大约150埃之间的超薄MnPt反铁磁性钉扎层。 由此生产的传感器结构适用于高密度应用。

公开(公告)号：US5864450A

公开(公告)日：1999-01-26

申请号：US99537

申请日：1998-06-18

申请人： Mao-Min Chen ,  Neil Leslie Robertson

发明人： Mao-Min Chen ,  Neil Leslie Robertson

IPC分类号： G11B5/127 ,  G11B5/147 ,  G11B5/31 ,  G11B5/39

CPC分类号： G11B5/3967 ,  G11B5/127 ,  G11B5/147 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/39

摘要： The present invention provides a novel high magnetic moment material for the pole pieces as well as a metal-in-gap configuration for the pole tips of either an inductive magnetic head only or the inductive portion of a MR head. The novel material is Ni.sub.45 Fe.sub.55. In the MIG configuration each pole piece of the inductive head or the inductive head portion of a MR head has a combination of layers, each combination of layers including a first layer of high magnetic moment material Ni.sub.45 Fe.sub.55 adjacent to a transducing gap and a second layer of low magnetic moment material such as Permalloy (Ni.sub.81 Fe.sub.19) further away from the gap. Since both layers are made of NiFe all the desirable properties of this type of material can be employed as well as simplifying its construction with similar plating baths. The saturation of the first layers is 50 to 60 percent higher than the saturation of the second layers. The present invention avoids effects of magnetostriction in spite of the high magnetic moment of the first layers. By appropriately selecting the thickness ratio of the second layer with respect to the first layer the magnetostriction of the laminated structure can be reduced substantially to zero. When this thickness ratio is in the order of five to nine the magnetostriction is reduced to, or slightly below, zero. If the inductive head is employed for write functions only then the second pole tip or both pole tips can be constructed of the high moment Ni.sub.45 Fe.sub.55 material without any thickness ratio or MIG configuration constraints.

摘要翻译： 本发明提供了一种用于极片的新型高磁矩材料以及仅用于感应磁头或MR磁头的感应部分的极尖的金属间隙配置。 新材料是Ni45Fe55。 在MIG配置中，感应头或MR头的感应头部分的每个极片具有层的组合，每层组合包括与换能间隙相邻的第一层高磁矩材料Ni45Fe55和第二层 低磁矩材料如坡莫合金（Ni81Fe19）远离间隙。 由于两层由NiFe制成，所以可以使用这种类型的材料的所有理想特性，并且可以使用类似的电镀浴来简化其构造。 第一层的饱和度比第二层的饱和度高50至60％。 本发明避免了磁致伸缩的影响，尽管第一层的磁矩高。 通过适当地选择第二层相对于第一层的厚度比，层压结构的磁致伸缩可以基本上减小到零。 当该厚度比为5至9的数量级时，磁致伸缩降低到或略低于零。 如果感应头仅用于写入功能，那么第二极尖或两个极尖可以由没有任何厚度比或MIG配置约束的高力矩Ni45Fe55材料构成。

公开(公告)号：US5606478A

公开(公告)日：1997-02-25

申请号：US351996

申请日：1994-12-08

申请人： Mao-Min Chen ,  Neil L. Robertson

发明人： Mao-Min Chen ,  Neil L. Robertson

IPC分类号： G11B5/127 ,  G11B5/147 ,  G11B5/187 ,  G11B5/31 ,  G11B5/39 ,  G11B5/193

CPC分类号： G11B5/3967 ,  G11B5/127 ,  G11B5/147 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/3146 ,  G11B5/3153 ,  G11B5/1878

摘要： The present invention provides a novel high magnetic moment material for the pole pieces as well as a metal-in-gap configuration for the pole tips of either an inductive magnetic head only or the inductive portion of a MR head. The novel material is Ni.sub.45 Fe.sub.55. In the MIG configuration each pole piece of the inductive head or the inductive head portion of a MR head has a combination of layers, each combination of layers including a first layer of high magnetic moment material Ni.sub.45 Fe.sub.55 adjacent to a transducing gap and a second layer of low magnetic moment material such as Permalloy (Ni.sub.81 Fe.sub.19) further away from the gap. Since both layers are made of NiFe all the desirable properties of this type of material can be employed as well as simplifying its construction with similar plating baths. The saturation of the first layers is 50 to 60 percent higher than the saturation of the second layers. The present invention avoids effects of magnetostriction in spite of the high magnetic moment of the first layers. By appropriately selecting the thickness ratio of the second layer with respect to the first layer the magnetostriction of the laminated structure can be reduced substantially to zero. When this thickness ratio is in the order of five to nine the magnetostriction is reduced to, or slightly below, zero. If the inductive head is employed for write functions only then the second pole tip or both pole tips can be constructed of the high moment Ni.sub.45 Fe.sub.55 material without any thickness ratio or MIG configuration constraints.

摘要翻译： 本发明提供了一种用于极片的新型高磁矩材料以及仅用于感应磁头或MR磁头的感应部分的极尖的金属间隙配置。 新材料是Ni45Fe55。 在MIG配置中，感应头或MR头的感应头部分的每个极片都具有层的组合，每层组合包括与换能间隙相邻的第一层高磁矩材料Ni45Fe55和第二层 低磁矩材料如坡莫合金（Ni81Fe19）远离间隙。 由于两层由NiFe制成，所以可以使用这种类型的材料的所有理想特性，并且可以使用类似的电镀浴来简化其构造。 第一层的饱和度比第二层的饱和度高50至60％。 本发明避免了磁致伸缩的影响，尽管第一层的磁矩高。 通过适当地选择第二层相对于第一层的厚度比，层压结构的磁致伸缩可以基本上减小到零。 当该厚度比为5至9的数量级时，磁致伸缩降低到或略低于零。 如果感应头仅用于写入功能，那么第二极尖或两个极尖可以由没有任何厚度比或MIG配置约束的高力矩Ni45Fe55材料构成。

公开(公告)号：US5488528A

公开(公告)日：1996-01-30

申请号：US292630

申请日：1994-08-18

申请人： Mao-Min Chen ,  Kochan Ju ,  Neil L. Robertson ,  Po-Kang Wang

发明人： Mao-Min Chen ,  Kochan Ju ,  Neil L. Robertson ,  Po-Kang Wang

IPC分类号： G11B5/31 ,  G11B5/147

CPC分类号： G11B5/3163 ,  G11B5/3116 ,  G11B5/3183

摘要： A horizontal thin film magnetic head is provided which has well aligned pole tips. The head includes first and second seedlayers, the first and second seedlayers being located below a first pole tip and only the second seedlayer being located below the second pole tip. The first pole tip may be capped with a nonmagnetic material such as copper. A very narrow sidegap is employed between the first and second pole tips.

摘要翻译： 提供了具有良好对准的极尖的水平薄膜磁头。 头部包括第一和第二种子层，第一和第二种子层位于第一极端部下方，并且仅第二种子层位于第二极尖端下方。 第一极尖可以用诸如铜的非磁性材料加盖。 在第一和第二极尖之间使用非常窄的侧隙。

公开(公告)号：US5285339A

公开(公告)日：1994-02-08

申请号：US843702

申请日：1992-02-28

申请人： Mao-Min Chen ,  Kochan Ju ,  Mohamad T. Krounbi ,  Ching H. Tsang ,  Po-Kang Wang

发明人： Mao-Min Chen ,  Kochan Ju ,  Mohamad T. Krounbi ,  Ching H. Tsang ,  Po-Kang Wang

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： G11B5/3903

摘要： An MR read transducer having passive end regions separated by a central active region comprises an MR layer made from a material having a low uniaxial magnetic anisotropy. A soft magnetic bias layer is adjacent to but spaced from the MR layer in the central region only, and the soft magnetic bias layer is made from a material having a high uniaxial magnetic anisotropy. A longitudinal bias is produced directly in each of the end regions only, and the means for producing the longitudinal bias comprise a layer made from a material having a high uniaxial magnetic anisotropy. Control of the uniaxial anisotropy can be achieved by choosing materials of appropriate magnetostriction or intrinsic uniaxial anisotropy.

摘要翻译： 具有由中心有源区域分离的无源端区域的MR读取传感器包括由具有低单轴磁各向异性的材料制成的MR层。 软磁偏置层仅与中心区域中的MR层相邻但间隔开，并且软磁偏置层由具有高单轴磁各向异性的材料制成。 仅在每个端部区域中直接产生纵向偏压，并且用于产生纵向偏压的装置包括由具有高单轴磁各向异性的材料制成的层。 单轴各向异性的控制可以通过选择适当的磁致伸缩材料或固有单轴各向异性来实现。

公开(公告)号：US5262914A

公开(公告)日：1993-11-16

申请号：US779221

申请日：1991-10-18

申请人： Mao-Min Chen ,  Ching H. Tsang

发明人： Mao-Min Chen ,  Ching H. Tsang

IPC分类号： G11B5/39 ,  B05D5/12 ,  H01L43/08

CPC分类号： G11B5/399

摘要： A magnetoresistive (MR) read transducer in which a layered structure comprising an MR layer, an antiferromagnetic material in direct contact with the MR layer and a thin layer of interdiffusion material in contact with the layer of antiferromagnetic material is subjected to a heating process to a temperature within a chosen temperature for a chosen time to form a magnetic interface between the antiferromagnetic material the MR layer. The magnetic interface produces a high level of exchange bias with the MR layer.

摘要翻译： 一种磁阻（MR）读取传感器，其中包括MR层，与MR层直接接触的反铁磁材料和与反铁磁材料层接触的相互扩散材料的薄层的分层结构经受加热处理 温度在所选择的温度内选定的时间，以形成反铁磁材料MR层之间的磁界面。 磁性界面与MR层产生高水平的交换偏压。

公开(公告)号：US07217577B2

公开(公告)日：2007-05-15

申请号：US11522663

申请日：2006-09-18

申请人： Cheng T. Horng ,  Mao-Min Chen ,  Liubo Hong ,  Ru-Ying Tong

发明人： Cheng T. Horng ,  Mao-Min Chen ,  Liubo Hong ,  Ru-Ying Tong

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  H01L43/08 ,  Y10S977/934 ,  Y10S977/935

摘要： An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) cell is formed on a conducting lead and magnetic keeper layer that is capped by a sputter-etched Ta layer. The Ta capping layer has a smooth surface as a result of the sputter-etching and that smooth surface promotes the subsequent formation of a lower electrode (pinning/pinned layer) with smooth, flat layers and a radical oxidized (ROX) Al tunneling barrier layer which is ultra-thin, smooth, and to has a high breakdown voltage. A seed layer of NiCr is formed on the sputter-etched capping layer of Ta. The resulting device has generally improved performance characteristics in terms of its switching characteristics, GMR ratio and junction resistance.

摘要翻译： 在由溅射蚀刻的Ta层覆盖的导电引线和磁保持层上形成MTJ（磁性隧道结）MRAM（磁性随机存取存储器）单元。 作为溅射蚀刻的结果，Ta覆盖层具有光滑的表面，并且光滑表面促进随后形成具有光滑的平坦层和自由基氧化（ROX）Al隧穿势垒层的下电极（钉扎/钉扎层） 其超薄，光滑，并具有高击穿电压。 在Ta的溅射蚀刻的覆盖层上形成NiCr种子层。 在其开关特性，GMR比和结电阻方面，所得到的器件通常具有改进的性能特性。