公开(公告)号：US5571366A

公开(公告)日：1996-11-05

申请号：US327798

申请日：1994-10-20

Applicant: Nobuo Ishii ,  Jiro Hata ,  Chishio Koshimizu ,  Yoshifumi Tahara ,  Hiroshi Nishikawa ,  Isei Imahashi

Inventor： Nobuo Ishii ,  Jiro Hata ,  Chishio Koshimizu ,  Yoshifumi Tahara ,  Hiroshi Nishikawa ,  Isei Imahashi

IPC: H01J37/32 ,  H05H1/00

CPC classification number: H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32935 ,  H01J37/32963 ,  H01J37/3299 ,  H01J2237/334 ,  H01J2237/3343

Abstract: A plasma processing apparatus includes a chamber having a gas inlet port and a gas discharge port, a rest table, arranged in the chamber, for supporting a wafer which has a surface to be processed, a radio frequency antenna for supplying a radio frequency energy into the chamber, and generating an induced plasma in the chamber, and a radio frequency voltage source for applying a radio frequency voltage to the radio frequency antenna. A pressure and/or light variation in the chamber is measured during generation of the plasma, by a measurement system, and the radio frequency voltage source is controlled based on a signal from the measurement system, so that voltage to be applied to the antenna is controlled according to the pressure and/or light in the chamber.

Abstract translation: 一种等离子体处理装置，包括具有气体入口和气体排出口的室，设置在室内的用于支撑具有待处理表面的晶片的静止台，用于将射频能量供给的射频天线 并且在腔室中产生感应等离子体，以及用于向射频天线施加射频电压的射频电压源。 通过测量系统在等离子体的产生期间测量室中的压力和/或光的变化，并且基于来自测量系统的信号来控制射频电压源，使得施加到天线的电压为 根据腔室内的压力和/或光线进行控制。

公开(公告)号：US4862383A

公开(公告)日：1989-08-29

申请号：US919766

申请日：1986-10-16

Applicant: Chishio Koshimizu ,  Yasuo Hayakawa ,  Toshio Nonaka ,  Sakae Takeda

Inventor： Chishio Koshimizu ,  Yasuo Hayakawa ,  Toshio Nonaka ,  Sakae Takeda

IPC: G01N29/04 ,  G01N29/11 ,  G01N29/38 ,  G01N29/48

CPC classification number: G01N29/48 ,  G01N29/0645 ,  G01N29/11 ,  G01N29/38 ,  G01N29/4454 ,  G01N2291/044 ,  G01N2291/2697

Abstract: In an ultrasonic inspection method and apparatus for inspecting the presence or absence of a defect in an object to be inspected by receiving as an RF signal a reflection beam of an ultrasonic beam emitted from a probe to the object and displaying data of the RF signal on a display unit, a maximum value indicative of a positive peak of the RF signal is detected, a maximum absolute value indicative of a negative peak of the RF signal is detected, a computation is performed for comparing in magnitude the maximum value indicative of the positive peak with the maximum absolute value indicative of the negative peak, and a computed value is displayed on the display unit so that the presence or absence of a phase inversion of the RF signal may be judged for deciding the presence or absence of a defect in the object.

Abstract translation: 在超声波检查方法和装置中，通过接收作为RF信号的从探头发射的超声波束的反射光束和对RF信号的数据进行检测来检查被检查物体中是否存在缺陷 检测到显示单元，表示RF信号的正峰值的最大值，检测到表示RF信号的负峰值的最大绝对值，进行用于比较大小的表示正值的最大值的运算 具有指示负峰值的最大绝对值的峰值，并且计算值被显示在显示单元上，使得RF信号的相位反转的存在或不存在可以被判断用于确定是否存在缺陷的存在 目的。

公开(公告)号：US09313872B2

公开(公告)日：2016-04-12

申请号：US12913441

申请日：2010-10-27

Applicant: Yohei Yamazawa ,  Chishio Koshimizu ,  Kazuki Denpoh ,  Jun Yamawaku ,  Masashi Saito

Inventor： Yohei Yamazawa ,  Chishio Koshimizu ,  Kazuki Denpoh ,  Jun Yamawaku ,  Masashi Saito

IPC: C23C16/00 ,  H01L21/306 ,  H05H1/46 ,  H01J37/32

CPC classification number: H01J37/3211 ,  C23C16/455 ,  C23C16/50 ,  H01J37/321 ,  H01J37/3244 ,  H05H1/46

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.

Abstract translation: 一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈形RF天线; 基板支撑单元，设置在处理室中，用于在其上安装待处理的目标基板; 处理气体供应单元，用于将所需的处理气体供应到处理室以对目标基板执行所需的等离子体处理; 以及RF电源单元，用于向RF天线提供RF功率，以通过处理室中的感应耦合产生处理气体的等离子体。 该装置还包括一个浮动线圈，其浮动并布置在处理室外部的位置处，浮动线圈将通过电磁感应与RF天线耦合; 以及设置在浮动线圈的环路中的电容器。

公开(公告)号：US09253867B2

公开(公告)日：2016-02-02

申请号：US12913183

申请日：2010-10-27

Applicant: Yohei Yamazawa ,  Masashi Saito ,  Kazuki Denpoh ,  Chishio Koshimizu ,  Jun Yamawaku

Inventor： Yohei Yamazawa ,  Masashi Saito ,  Kazuki Denpoh ,  Chishio Koshimizu ,  Jun Yamawaku

IPC: H01L21/306 ,  C23C16/00 ,  H05H1/46 ,  H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831 ,  H05H1/46

Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.

Abstract translation: 一种等离子体处理装置，包括：具有电介质窗的可抽空处理室; 基板支撑单元，设置在处理室中，用于在其上安装目标基板; 处理气体供给单元，用于向所述处理室供给期望的处理气体，以在所述目标基板上进行等离子体处理; 设置在电介质窗口上的第一RF天线，用于通过处理室中的感应耦合产生等离子体; 以及用于向第一RF天线提供RF功率的第一RF电源单元。 第一RF天线包括设置在电介质窗口上或电介质窗上方的电连接到第一RF电源单元的初级线圈; 以及次级线圈，其被设置成使得线圈通过其间的电磁感应彼此耦合，同时布置成比初级线圈更靠近电介质窗口的底表面。

公开(公告)号：US09019505B2

公开(公告)日：2015-04-28

申请号：US13240274

申请日：2011-09-22

Applicant: Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Kenji Nagai

Inventor： Jun Yamawaku ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Kenji Nagai

IPC: G01B9/02 ,  H01L21/67 ,  G01J5/58 ,  G01J9/02

CPC classification number: H01L21/67248 ,  G01J9/02 ,  G01J2005/583

Abstract: The temperature control system includes: a susceptor which allows an object to be processed to be held on a top surface thereof and includes a flow path, through which a temperature adjusting medium flows, formed therein; a temperature measuring unit which measures a temperature of the object to be processed held on the top surface of the susceptor; a first temperature adjusting unit which adjusts a temperature of the temperature adjusting medium flowing through the flow path; and a second temperature adjusting unit which is disposed between the susceptor and the first temperature adjusting unit, and adjusts a temperature of the temperature adjusting medium based on a result of the measurement of the temperature measuring unit.

Abstract translation: 温度控制系统包括：一个允许被处理物体被保持在其顶面上的基座，并且包括在其中形成温度调节介质流过的流路; 温度测量单元，其测量保持在所述基座的顶表面上的被处理物体的温度; 第一温度调节单元，其调节流过所述流路的温度调节介质的温度; 以及第二温度调节单元，其设置在所述基座和所述第一温度调节单元之间，并且基于所述温度测量单元的测量结果来调节所述温度调节介质的温度。

公开(公告)号：US08741097B2

公开(公告)日：2014-06-03

申请号：US12913162

申请日：2010-10-27

Applicant: Yohei Yamazawa ,  Chishio Koshimizu ,  Masashi Saito ,  Kazuki Denpoh ,  Jun Yamawaku

Inventor： Yohei Yamazawa ,  Chishio Koshimizu ,  Masashi Saito ,  Kazuki Denpoh ,  Jun Yamawaku

IPC: H01L21/306 ,  C23C16/00

CPC classification number: H01J37/3211 ,  H01J37/321 ,  H01J37/32146 ,  H01L21/67109 ,  H01L21/6831

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.

Abstract translation: 一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 设置在所述处理室中的基板支撑单元; 处理气体供应单元; RF电源单元，用于向RF天线提供RF功率以通过处理室中的感应耦合产生处理气体的等离子体，所述RF功率具有用于处理气体的RF放电的适当频率; 校正线圈，设置在所述处理室外侧的位置处，所述校正线圈将通过电磁感应与所述RF天线耦合，用于控制所述处理室中的所述衬底上的等离子体密度分布; 设置在所述校正线圈的环路中的开关装置; 以及用于通过脉冲宽度调制以期望的占空比开关控制开关装置的开关控制单元。

公开(公告)号：US08689733B2

公开(公告)日：2014-04-08

申请号：US12176501

申请日：2008-07-21

Applicant: Chishio Koshimizu ,  Yohei Yamazawa

Inventor： Chishio Koshimizu ,  Yohei Yamazawa

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32174 ,  H01J37/32082 ,  H01J37/3299

Abstract: This invention includes a first filter (27) connected between a susceptor (21) and ground and having a variable impedance, a sensor (28) for detecting an electrical signal based on the state of a plasma (P) generated in a process chamber (11), and a control means (36) for controlling the impedance of the first filter (27) on the basis of a detection result output from the sensor (28). Thus, a preferable plasma distribution to match the object of the plasma process can be realized.

Abstract translation: 本发明包括连接在基座（21）和接地之间并具有可变阻抗的第一滤波器（27），用于基于在处理室中产生的等离子体（P）的状态来检测电信号的传感器（28） 11），以及控制装置（36），用于根据从传感器（28）输出的检测结果来控制第一过滤器（27）的阻抗。 因此，可以实现与等离子体处理的目的相匹配的优选的等离子体分布。

公开(公告)号：US08608903B2

公开(公告)日：2013-12-17

申请号：US12913135

申请日：2010-10-27

Applicant: Yohei Yamazawa ,  Chishio Koshimizu ,  Masashi Saito ,  Kazuki Denpoh ,  Jun Yamawaku ,  Hachishiro Iizuka

Inventor： Yohei Yamazawa ,  Chishio Koshimizu ,  Masashi Saito ,  Kazuki Denpoh ,  Jun Yamawaku ,  Hachishiro Iizuka

IPC: H01L21/306 ,  C23C16/00

CPC classification number: H01J37/321 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138

Abstract: A plasma processing apparatus includes: a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a processing gas to the chamber; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the chamber. The apparatus further includes a correction coil, provided at a position outside the chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution in the chamber; and an antenna-coil distance control unit for controlling a distance between the RF antenna and the correction coil while supporting the correction coil substantially in parallel with the RF antenna.

Abstract translation: 一种等离子体处理装置，包括：包括电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 基板支撑单元，设置在所述室中，用于在其上安装目标基板; 处理气体供应单元，用于将处理气体供应到所述室; 以及RF电源单元，用于向RF天线提供RF功率，以通过腔室中的感应耦合产生处理气体的等离子体。 该装置还包括校正线圈，其设置在室外的位置处，其中校正线圈将通过电磁感应与RF天线耦合，用于控制腔室中的等离子体密度分布; 以及天线线圈距离控制单元，用于在支撑基本上与RF天线并联的校正线圈的同时控制RF天线和校正线圈之间的距离。

公开(公告)号：US08603293B2

公开(公告)日：2013-12-10

申请号：US13186145

申请日：2011-07-19

Applicant: Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Yoshinobu Ohya ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa ,  Hidetoshi Hanaoka ,  Toshihiro Hayami ,  Hiroki Yamazaki ,  Manabu Sato

Inventor： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Yoshinobu Ohya ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa ,  Hidetoshi Hanaoka ,  Toshihiro Hayami ,  Hiroki Yamazaki ,  Manabu Sato

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32422 ,  H01J37/32018 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32834 ,  H01J2237/2001 ,  H01J2237/334 ,  H01J2237/3344 ,  H01L21/67069 ,  Y10S156/915

Abstract: A plasma processing apparatus includes a processing container, an exhaust unit, an exhaust plate, an RF power application unit connected to a second electrode but not connected to the first electrode and configured to apply an RF power with a single frequency, the second electrode being connected to no power supply that applies an RF power other than the RF power with the single frequency, a DC power supply connected to the first electrode but not connected to the second electrode, the first electrode being connected to no power supply that applies an RF power, and a conductive member within the process container grounded to release through plasma a current caused by the DC voltage, the conductive member supported by the first shield part and laterally protruding therefrom only at a position that is located, in a height-wise direction, between a mount face and the exhaust plate and below a bottom of a focus ring.

Abstract translation: 等离子体处理装置包括处理容器，排气单元，排气板，连接到第二电极但未连接到第一电极并被配置为施加具有单一频率的RF功率的RF功率施加单元，第二电极为 连接到没有施加除了单个频率的RF功率之外的RF功率的电源，连接到第一电极但没有连接到第二电极的直流电源，第一电极连接到不施加RF的电源 功率和处理容器内的导电构件接地，以通过等离子体释放由直流电压引起的电流，导电构件由第一屏蔽部分支撑并且仅在位于高度方向的位置处侧向突出 在安装面和排气板之间以及聚焦环的底部之下。

公开(公告)号：US08585284B2

公开(公告)日：2013-11-19

申请号：US13428870

申请日：2012-03-23

Applicant: Jun Abe ,  Tatsuo Matsudo ,  Chishio Koshimizu

Inventor： Jun Abe ,  Tatsuo Matsudo ,  Chishio Koshimizu

IPC: G01J5/00 ,  G01B9/02

CPC classification number: G01K11/00 ,  G01K11/125

Abstract: A temperature measurement apparatus includes a light source; a first splitter that splits a light beam into a measurement beam and a reference beam; a reference beam reflector that reflects the reference beam; an optical path length adjustor; a second splitter that splits the reflected reference beam into a first reflected reference beam and a second reflected reference beam; a first photodetector that measures an interference between the first reflected reference beam and a reflected measurement beam obtained by the measurement beam reflected from a target object; a second photodetector that measures an intensity of the second reflected reference beam; and a temperature calculation unit. The temperature calculation unit calculates a location of the interference by subtracting an output signal of the second photodetector from an output signal of the first photodetector, and calculates a temperature of the target object from the calculated location of the interference.

Abstract translation: 温度测量装置包括光源; 第一分离器，其将光束分成测量光束和参考光束; 反射参考光束的参考光束反射器; 光路长度调节器; 第二分离器，其将反射的参考光束分成第一反射参考光束和第二反射参考光束; 测量第一反射参考光束与由目标物体反射的测量光束获得的反射测量光束之间的干涉的第一光电检测器; 第二光电检测器，其测量第二反射参考光束的强度; 和温度计算单元。 温度计算单元通过从第一光电检测器的输出信号减去第二光电检测器的输出信号来计算干扰的位置，并根据所计算的干扰位置计算目标对象的温度。