公开(公告)号：US08741775B2

公开(公告)日：2014-06-03

申请号：US13187224

申请日：2011-07-20

申请人： Srinivas D. Nemani ,  Yifeng Zhou ,  Dmitry Lubomirsky ,  Ellie Yieh

发明人： Srinivas D. Nemani ,  Yifeng Zhou ,  Dmitry Lubomirsky ,  Ellie Yieh

IPC分类号： H01L21/3105

CPC分类号： H01L21/3105 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144

摘要： Methods of patterning low-k dielectric films are described. For example, a method includes forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. Exposed portions of the low-k dielectric layer are modified with a plasma process. The modified portions of the low-k dielectric layer are removed selective to the mask layer and unmodified portions of the low-k dielectric layer.

摘要翻译： 描述了低k介电膜图案的方法。 例如，一种方法包括在低k电介质层之上形成和图案化掩模层，低k电介质层设置在衬底之上。 低等离子体介质层的露出部分用等离子体工艺进行改性。 低k电介质层的修改部分被选择性地去除低k电介质层的掩模层和未修饰部分。

公开(公告)号：US20070132054A1

公开(公告)日：2007-06-14

申请号：US11609851

申请日：2006-12-12

申请人： Reza Arghavani ,  Ellie Yieh ,  Hichem M'Saad

发明人： Reza Arghavani ,  Ellie Yieh ,  Hichem M'Saad

IPC分类号： H01L29/00

CPC分类号： H01L29/7846 ,  H01L27/105 ,  H01L27/1052 ,  H01L29/66825 ,  H01L29/7883

摘要： A memory cell comprises a p-doped substrate with a pair of spaced apart n-doped regions on the substrate that form a source and drain about the channel. A stack of layers on the channel comprises, in sequence, (i) a tunnel oxide layer, (ii) a floating gate, (iii) an inter-gate dielectric, and (iv) a control gate. A polysilicon layer is on the source and drain. A cover layer covering the stack of layers comprises a spacer layer and a pre-metal-deposition layer. Optionally, contacts are used to contact each of the source, drain, and silicide layers, and each have exposed portions. A shallow isolation trench is provided about n-doped regions, the trench comprising a stressed silicon oxide layer having a tensile stress of at least about 200 MPa. The stressed layer reduces leakage of charge held in the floating gate during operation of the memory cell.

摘要翻译： 存储单元包括在基板上具有一对间隔开的n掺杂区域的p掺杂衬底，其在沟道周围形成源极和漏极。 通道上的层叠层包括（i）隧道氧化物层，（ii）浮动栅极，（iii）栅极间电介质和（iv）控制栅极。 源极和漏极上的多晶硅层。 覆盖层叠层的覆盖层包括间隔层和预金属沉积层。 可选地，使用触点来接触源极，漏极和硅化物层中的每一个，并且每个都具有暴露部分。 围绕n掺杂区域提供浅的隔离沟槽，沟槽包括具有至少约200MPa的拉伸应力的应力氧化硅层。 应力层在存储器单元的操作期间减少了保持在浮动栅极中的电荷的泄漏。

公开(公告)号：US20060144334A1

公开(公告)日：2006-07-06

申请号：US11369689

申请日：2006-03-07

申请人： Kang Yim ,  Soovo Sen ,  Dian Sugiarto ,  Peter Lee ,  Ellie Yieh

发明人： Kang Yim ,  Soovo Sen ,  Dian Sugiarto ,  Peter Lee ,  Ellie Yieh

IPC分类号： C23C16/00 ,  H01L21/20

CPC分类号： C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244

摘要： A showerhead adapted for distributing gases into a process chamber and a method for forming dielectric layers on a substrate are generally provided. In one embodiment, a showerhead for distributing gases in a processing chamber includes an annular body coupled between a disk and a mounting flange. The disk has a plurality of holes formed therethrough. A lip extends from a side of the disk opposite the annular body and away from the mounting flange. The showerhead may be used for the deposition of dielectric materials on a substrate. In one embodiment, silicon nitride and silicon oxide layers are formed on the substrate without removing the substrate from a processing chamber utilizing the showerhead of the present invention.

公开(公告)号：US08232176B2

公开(公告)日：2012-07-31

申请号：US11765944

申请日：2007-06-20

申请人： Dmitry Lubomirsky ,  Srinivas D. Nemani ,  Ellie Yieh

发明人： Dmitry Lubomirsky ,  Srinivas D. Nemani ,  Ellie Yieh

IPC分类号： H01L21/762

CPC分类号： H01L21/76229

摘要： Methods to reduce film cracking in a dielectric layer are described. The methods may include the steps of depositing a first dielectric film on a substrate and removing a top portion of the first dielectric film by performing an etch on the film. The methods may also include depositing a second dielectric film over the etched first film, and removing a top portion of the second dielectric film. In addition, the methods may include annealing the first and second dielectric films to form the dielectric layer, where the removal of the top portions from the first and the second dielectric films reduces a stress level in the dielectric layer.

摘要翻译： 描述了减少电介质层中的膜破裂的方法。 所述方法可以包括以下步骤：在衬底上沉积第一电介质膜并通过对膜进行蚀刻来去除第一电介质膜的顶部。 所述方法还可以包括在蚀刻的第一膜上沉积第二电介质膜，以及去除第二电介质膜的顶部。 此外，所述方法可以包括退火第一和第二介电膜以形成电介质层，其中从第一和第二电介质膜去除顶部部分降低了介电层中的应力水平。

公开(公告)号：US07867923B2

公开(公告)日：2011-01-11

申请号：US11876538

申请日：2007-10-22

申请人： Abhijit Basu Mallick ,  Srinivas D. Nemani ,  Ellie Yieh

发明人： Abhijit Basu Mallick ,  Srinivas D. Nemani ,  Ellie Yieh

IPC分类号： H01L21/02

CPC分类号： C23C16/345 ,  C23C16/452 ,  C23C16/56

摘要： A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor.

摘要翻译： 一种在衬底上沉积含硅和氮的膜的方法。 该方法包括将含硅前体引入到包含基底的沉积室中，其中含硅前体包含至少两个硅原子。 该方法还包括用位于沉积室外部的远程等离子体系统产生至少一种自由基氮前体。 此外，该方法包括将自由基氮前体引入沉积室，其中自由基含氮和含硅前体将含硅和氮的膜反应并沉积在基底上。 此外，该方法包括在蒸汽环境中退火含硅和氮的膜以形成氧化硅膜，其中蒸汽环境包括水和酸性蒸汽。

公开(公告)号：US20070289534A1

公开(公告)日：2007-12-20

申请号：US11754858

申请日：2007-05-29

申请人： Dmitry Lubomirsky ,  Qiwei Liang ,  Soonam Park ,  Kien Chuc ,  Ellie Yieh

发明人： Dmitry Lubomirsky ,  Qiwei Liang ,  Soonam Park ,  Kien Chuc ,  Ellie Yieh

IPC分类号： C23C16/452

CPC分类号： C23C16/46 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/67115

摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a radiative heating system to heat the substrate that includes at least one light source, where at least some of the light emitted from the light source travels through the top side of the deposition chamber before reaching the substrate. The system may also include a precursor distribution system to introduce the reactive radical precursor and additional dielectric precursors to the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.

摘要翻译： 描述了从电介质前体的等离子体在衬底上形成电介质层的系统。 该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体 。 该系统还可以包括辐射加热系统以加热包括至少一个光源的基板，其中从光源发射的至少一些光在到达基板之前穿过沉积室的顶侧。 该系统还可以包括将反应性基团前体和另外的电介质前体引入沉积室的前体分配系统。 还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。

公开(公告)号：US20070277734A1

公开(公告)日：2007-12-06

申请号：US11754916

申请日：2007-05-29

申请人： Dmitry Lubomirsky ,  Qiwei Liang ,  Soonam Park ,  Kien Chuc ,  Ellie Yieh

发明人： Dmitry Lubomirsky ,  Qiwei Liang ,  Soonam Park ,  Kien Chuc ,  Ellie Yieh

IPC分类号： C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/402 ,  C23C16/45574 ,  C23C16/505

摘要： A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system comprising a dual-channel showerhead positioned above the substrate stage. The showerhead may have a faceplate with a first set of openings through which the reactive radical precursor enters the deposition chamber, and a second set of openings through which a second dielectric precursor enters the deposition chamber. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.

摘要翻译： 描述了从电介质前体的等离子体在衬底上形成电介质层的系统。 该系统可以包括沉积室，用于保持衬底的沉积室中的衬底台和耦合到沉积室的远程等离子体生成系统，其中等离子体产生系统用于产生具有一个或多个反应性基团的电介质前体 。 该系统还可以包括前体分配系统，其包括位于衬底台上方的双通道喷头。 喷头可以具有面板，其具有第一组开口，反应性自由基前体通过该开口进入沉积室，以及第二组开口，第二介电体前体通过该开口进入沉积室。 还可以包括原位等离子体产生系统，以从沉积室中提供的电介质前体在沉积室中产生等离子体。

公开(公告)号：US20070212850A1

公开(公告)日：2007-09-13

申请号：US11686863

申请日：2007-03-15

申请人： Nitin Ingle ,  Sidharth Bhatia ,  Won Bang ,  Zheng Yuan ,  Ellie Yieh ,  Shankar Venkatraman

发明人： Nitin Ingle ,  Sidharth Bhatia ,  Won Bang ,  Zheng Yuan ,  Ellie Yieh ,  Shankar Venkatraman

IPC分类号： H01L21/762

CPC分类号： C23C16/045 ,  C23C16/402 ,  C23C16/448 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/31612 ,  H01L21/76224 ,  H01L21/76837

摘要： A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate, where the method includes the steps of generating water vapor by contacting hydrogen gas and oxygen gas with a water vapor generation catalyst, and providing the water vapor to the process chamber. The method also includes flowing a silicon-containing precursor into the process chamber housing the substrate, flowing an oxidizing gas into the chamber, and causing a reaction between the silicon-containing precursor, the oxidizing gas and the water vapor to form the dielectric material in the trench. The method may also include increasing over time a ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber to alter a rate of deposition of the dielectric material.

摘要翻译： 一种用于在形成在衬底上的沟槽中形成电介质材料的化学气相沉积方法，其中所述方法包括通过使氢气和氧气与水蒸汽发生催化剂接触而产生水蒸气的步骤，并将水蒸汽提供给该过程 房间。 该方法还包括将含硅前体流入容纳基底的处理室，使氧化气体流入室内，并使含硅前体，氧化气体和水蒸汽之间的反应形成为 沟渠。 该方法还可以包括随着时间的推移，含硅前体与氧化气体的比例流入室以改变电介质材料的沉积速率。

公开(公告)号：US20070037397A1

公开(公告)日：2007-02-15

申请号：US11202043

申请日：2005-08-11

申请人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Robert Chen ,  Jason Bloking ,  Irene Chou ,  Steven Kim ,  Young Lee ,  Ellie Yieh

发明人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Robert Chen ,  Jason Bloking ,  Irene Chou ,  Steven Kim ,  Young Lee ,  Ellie Yieh

IPC分类号： H01L21/302

CPC分类号： H01J37/3244 ,  H01J37/321 ,  H01J37/32431 ,  H01J37/32458

摘要： A substrate processing system has a housing that defines a process chamber, a gas-delivery system, a high-density plasma generating system, a substrate holder, and a controller. The housing includes a sidewall and a dome positioned above the sidewall. The dome has physically separated and noncontiguous pieces. The gas-delivery system introduces e a gas into the process chamber through side nozzles positioned between two of the physically separated and noncontiguous pieces of the dome. The high-density plasma generating system is operatively coupled with the process chamber. The substrate holder is disposed within the process chamber and supports a substrate during substrate processing. The controller controls the gas-delivery system and the high-density plasma generating system.

摘要翻译： 衬底处理系统具有限定处理室，气体输送系统，高密度等离子体产生系统，衬底保持器和控制器的壳体。 壳体包括侧壁和位于侧壁上方的圆顶。 圆顶具有物理分离和不连续的部分。 气体输送系统通过位于两个物理分离的和不连续的圆顶之间的侧喷嘴将气体引入处理室。 高密度等离子体产生系统与处理室可操作地耦合。 衬底保持器设置在处理室内并且在衬底处理期间支撑衬底。 控制器控制气体输送系统和高密度等离子体发生系统。

公开(公告)号：US20060177600A1

公开(公告)日：2006-08-10

申请号：US11053363

申请日：2005-02-08

申请人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Jason Bloking ,  Ellie Yieh

发明人： Siqing Lu ,  Qiwei Liang ,  Canfeng Lai ,  Jason Bloking ,  Ellie Yieh

IPC分类号： H05H1/02 ,  C23C16/00 ,  H05H1/46

CPC分类号： H01J37/32688 ,  H01J37/321

摘要： A substrate processing system has a housing that defines a process chamber. A substrate holder is disposed within the process chamber and configured to support a substrate within a substrate plane during substrate processing. A gas-delivery system is configured to introduce a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density-plasma generating system is operatively coupled with the process chamber. A magnetic confinement ring with magnetic dipoles is disposed circumferentially around a symmetry axis orthogonal to the substrate plane and provides a magnetic field with a net dipole moment substantially nonparallel with the substrate plane. A controller controls the gas-delivery system, the pressure-control system, and the high-density plasma system.

摘要翻译： 衬底处理系统具有限定处理室的壳体。 衬底保持器设置在处理室内并且构造成在衬底处理期间将衬底支撑在衬底平面内。 气体输送系统构造成将气体引入处理室。 压力控制系统在处理室内维持选定的压力。 高密度等离子体产生系统与处理室可操作地耦合。 具有磁偶极子的磁约束环周围围绕与基板平面正交的对称轴设置，并提供具有与基板平面基本上不平行的净偶极矩的磁场。 控制器控制气体输送系统，压力控制系统和高密度等离子体系统。