公开(公告)号：US07943943B2

公开(公告)日：2011-05-17

申请号：US11818024

申请日：2007-06-12

申请人： Hideki Hirayama ,  Katsushi Akita ,  Takao Nakamura

发明人： Hideki Hirayama ,  Katsushi Akita ,  Takao Nakamura

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/32

摘要： To provide a light-emitting device using a nitride semiconductor which can attain high-power light emission by highly efficient light emission and a manufacturing method thereof, the light-emitting device includes a GaN substrate and a light-emitting layer including an InAlGaN quaternary alloy on a side of a first main surface of GaN substrate.

摘要翻译： 为了提供使用可以通过高效发光获得高功率发光的氮化物半导体的发光器件及其制造方法，该发光器件包括GaN衬底和包括InAlGaN四元合金的发光层 在GaN衬底的第一主表面的一侧。

公开(公告)号：US20110042713A1

公开(公告)日：2011-02-24

申请号：US12933927

申请日：2009-03-23

申请人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

发明人： Takayoshi Takano ,  Kenji Tsubaki ,  Hideki Hirayama ,  Sachie Fujikawa

IPC分类号： H01L33/32

CPC分类号： H01L33/12 ,  H01L33/02 ,  H01L33/025 ,  H01L33/32

摘要： The nitride semi-conductive light emitting layer in this invention comprises a single crystal substrate 1 for epitaxial growth, a first buffer layer 2, an n-type nitride semi-conductive layer 3, a second buffer layer 4, a third buffer layer 5, a light emitting layer 6, and a p-type nitride semi-conductive layer 7. The first buffer layer 2 is laminated to a top side of the single crystal substrate 1. The n-type nitride semi-conductive layer 3 is laminated to a top side of the first buffer layer 2. The third buffer layer 5 is laminated to a top side of the n-type nitride semi-conductive layer 3 with the second buffer layer 4 being interposed therebetween. The light emitting layer 6 is laminated to a top side of the third buffer layer 5. The p-type nitride semi-conductive layer 7 is laminated to a top side of the light emitting layer 6. The third buffer layer 5 serves as a planarized base for growth of the light emitting layer 6 so as to reduce a threading dislocation and a residual distortion in the light emitting layer 6. This nitride semi-conductive light emitting device reduces a piezoelectric field in the light emitting layer by exploiting carriers generated in the third buffer layer 5. The third buffer layer 5 is doped with an Si impurity serving as a donor.

摘要翻译： 本发明的氮化物半导体发光层包括用于外延生长的单晶衬底1，第一缓冲层2，n型氮化物半导体层3，第二缓冲层4，第三缓冲层5， 发光层6和p型氮化物半导体层7.第一缓冲层2层压到单晶衬底1的顶侧。将n型氮化物半导体层3层压到 第一缓冲层2的顶面。第三缓冲层5层叠在n型氮化物半导体层3的顶侧，第二缓冲层4插入其间。 发光层6层压到第三缓冲层5的顶侧.p型氮化物半导体层7层压到发光层6的顶侧。第三缓冲层5用作平坦化 从而减少发光层6中的穿透位错和残留变形。该氮化物半导体发光器件通过利用在该发光层6中生成的载流子来减少发光层中的压电场。 第三缓冲层5掺杂有作为供体的Si杂质。

公开(公告)号：US07576351B2

公开(公告)日：2009-08-18

申请号：US11698093

申请日：2007-01-26

申请人： Takashi Kyono ,  Hideki Hirayama

发明人： Takashi Kyono ,  Hideki Hirayama

IPC分类号： H01L29/12

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/14

摘要： A nitride semiconductor light generating device comprises an n-type gallium nitride based semiconductor layer, a quantum well active layer including an InX1AlY1Ga1-X1-Y1N (1>X1>0, 1>Y1>0) well layer and an InX2AlY2Ga1-X2-Y2N (1>X2>0, 1>Y2>0) barrier layer, an InX3AlY3Ga1-X3-Y3N (1>X3>0, 1>Y3>0) layer provided between the quantum well active layer and the n-type gallium nitride based semiconductor layer, and a p-type AlGaN layer having a bandgap energy greater than that of the InX2AlY2Ga1-X2-Y2N barrier layer. The indium composition X3 is greater than an indium composition X1. The indium composition X3 is greater than an indium composition X2. The aluminum composition Y2 is smaller than an aluminum composition Y3. The aluminum composition Y1 is smaller than an aluminum composition Y3. The oxygen concentration of the quantum well active layer is lower than that of the InX3AlY3Ga1-X3-Y3N layer. The quantum well active layer is provided between the p-type AlGaN layer and the InX3AlY3Ga1-X3-Y3N layer.

摘要翻译： 氮化物半导体光产生装置包括n型氮化镓基半导体层，包括InX1AlY1Ga1-X1-Y1N（1> X1> 0,1> Y1> 0）阱层的量子阱活性层和InX2AlY2Ga1-X2- Y2N（1> X2> 0,1> Y2> 0）阻挡层，设置在量子阱有源层和n型镓之间的InX3AlY3Ga1-X3-Y3N（1> X3> 0,1> Y3> 0）层 氮化物基半导体层和具有比InX2AlY2Ga1-X2-Y2N势垒层的能隙大的带隙能的p型AlGaN层。 铟组合物X3大于铟组合物X1。 铟组合物X3大于铟组合物X2。 铝组合物Y2小于铝组合物Y3。 铝组合物Y1小于铝组合物Y3。 量子阱活性层的氧浓度低于InX3AlY3Ga1-X3-Y3N层的氧浓度。 量子阱有源层设置在p型AlGaN层和InX3AlY3Ga1-X3-Y3N层之间。

公开(公告)号：US20090057646A1

公开(公告)日：2009-03-05

申请号：US12055949

申请日：2008-03-26

申请人： Hideki Hirayama ,  Tomoaki Ohashi ,  Norihiko Kamata

发明人： Hideki Hirayama ,  Tomoaki Ohashi ,  Norihiko Kamata

IPC分类号： H01L33/00 ,  H01L21/205

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/12

摘要： Because of a large lattice mismatch between a sapphire substrate and a group III-V compound semiconductor, a good crystal is difficult to grow. A high-quality AlN buffer growth structure A on a sapphire substrate includes a sapphire (0001) substrate 1, an AlN nucleation layer 3 formed on the sapphire substrate 1, a pulsed supplied AlN layer 5 formed on the AlN nucleation layer 3, and a continuous growth AlN layer 7 formed on the pulsed supplied AlN layer 5. Formed on the continuous growth AlN layer 7 is at least one set of a pulsed supplied AlN layer 11 and a continuous growth AlN layer 15. The AlN layer 3 is grown in an initial nucleation mode which is a first growth mode by using an NH3 pulsed supply method. The pulsed supplied AlN layer 5 is formed by using NH3 pulsed supply in a low growth mode which is a second growth mode that increases a grain size and reduces dislocations and therefore is capable of reducing dislocations and burying the nucleation layer 3. The continuous growth AlN layer 7 is a fast vertical growth mode that improves flatness and suppresses crack occurrences. As examples of the thickness of layers; the pulsed supplied AlN layer 5, 11 is 0.3 μm and the thickness of the continuous growth AlN layer 7, 15 is 1 μm, for example. Characteristics of conditions under which layers are grown are as follows. The AlN layer 3 is grown under a high temperature and a high pressure with a low V-III ratio (less N). The pulsed supplied AlN layer 5 is grown at a low temperature and a low pressure with a high V-III ratio (more N). The continuous AlN layer 7 is grown at a high temperature and a high pressure with a high V-III ratio (Al rich and less N) without using an NH3 pulsed supply AlN growth method.

摘要翻译： 由于蓝宝石衬底和III-V族化合物半导体之间的晶格失配很大，所以晶体难以生长。 蓝宝石衬底上的高质量的AlN缓冲生长结构A包括蓝宝石（0001）衬底1，形成在蓝宝石衬底1上的AlN成核层3，形成在AlN成核层3上的脉冲供应的AlN层5和 在脉冲供给的AlN层5上形成的连续生长AlN层7.在连续生长AlN层7上形成至少一组脉冲供给的AlN层11和连续生长AlN层15.将AlN层3生长在 初始成核模式是通过使用NH 3脉冲供给方法的第一生长模式。 脉冲供电的AlN层5是通过使用NH 3脉冲供给形成的，该低生长模式是增加晶粒尺寸并减少位错的第二生长模式，因此能够减少位错并掩埋成核层3.连续生长AlN 层7是快速的垂直生长模式，其提高平坦度并抑制裂纹发生。 作为层的厚度的例子; 脉冲供给的AlN层5,11为0.3μm，连续生长AlN层7,15的厚度例如为1μm。 生长层的条件的特征如下。 AlN层3在低V-III比（低N）的高温高压下生长。 脉冲供给的AlN层5在V-III比高（N以下）的低温低压下生长。 连续的AlN层7在不使用NH 3脉冲供给AlN生长方法的情况下，在高V-III比（Al浓度低于N）的高温高压下生长。

公开(公告)号：US20090040320A1

公开(公告)日：2009-02-12

申请号：US12164876

申请日：2008-06-30

申请人： Hideki Hirayama

发明人： Hideki Hirayama

IPC分类号： H04N5/228

CPC分类号： H04N5/23248

摘要： An image stabilization control circuit controls an optical element driving element that moves an optical element provided in an imaging apparatus based on an output signal of a vibration detection element provided in the imaging apparatus. The image stabilization control circuit includes a high-pass filter that removes a low-frequency component from an output signal of the vibration detection element. A movement amount calculation circuit calculates a movement amount of the imaging apparatus based on an output signal of the high-pass filter. A servo circuit generates a correction signal for correcting the position of the optical element based on an output signal of the movement amount calculation circuit and outputs the correction signal to the optical element driving element. The movement amount calculation circuit includes a digital filter circuit and a register. The digital filter circuit performs filter processing based on a filter coefficient stored in the register.

摘要翻译： 图像稳定控制电路控制基于设置在成像装置中的振动检测元件的输出信号来移动设置在成像装置中的光学元件的光学元件驱动元件。 图像稳定控制电路包括从振动检测元件的输出信号中去除低频分量的高通滤波器。 移动量计算电路基于高通滤波器的输出信号来计算摄像装置的移动量。 伺服电路基于移动量计算电路的输出信号产生用于校正光学元件的位置的校正信号，并将校正信号输出到光学元件驱动元件。 移动量计算电路包括数字滤波电路和寄存器。 数字滤波器电路基于存储在寄存器中的滤波器系数来执行滤波处理。

公开(公告)号：US20090026440A1

公开(公告)日：2009-01-29

申请号：US11659002

申请日：2006-04-25

申请人： Takashi Kyono ,  Katsushi Akita ,  Hideki Hirayama

发明人： Takashi Kyono ,  Katsushi Akita ,  Hideki Hirayama

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/06

摘要： A nitride semiconductor light-emitting element 11 is one for generating light containing a wavelength component in an ultraviolet region. The nitride semiconductor light-emitting element 11 has an active region 17 including InX1AlY1Ga1-X1-Y1N well layers 13 (1>X1>0 and 1>Y1>0) and InX2AlY2Ga1-X2-Y2N barrier layers 15 (1>X2>0 and 1>Y2>0). An energy gap difference Eg1 between the InX1AlY1Ga1-X1-Y1N well layers 13 and the InX2AlY2Ga1-X2-Y2N barrier layers 15 is not less than 2.4×10−20 J nor more than 4.8×10−20 J.

摘要翻译： 氮化物半导体发光元件11是用于产生包含紫外线区域中的波长分量的光的氮化物半导体发光元件。 氮化物半导体发光元件11具有InX1AlY1Ga1-X1-Y1N阱层13（1> X1> 0和Y1> Y1> 0）和InX2AlY2Ga1-X2-Y2N势垒层15（1> X2> 0）的有源区17 和1> Y2> 0）。 InX1AlY1Ga1-X1-Y1N阱层13和InX2AlY2Ga1-X2-Y2N势垒层15之间的能隙差Eg1不小于2.4×10-20J，也不大于4.8×10-20JJ。

公开(公告)号：US20080076199A1

公开(公告)日：2008-03-27

申请号：US11979873

申请日：2007-11-09

申请人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

发明人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06

摘要： The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGAN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.

摘要翻译： 半导体光产生装置包括发光区域3，第一Al 1 N 1 Ga 1-X1 N半导体（0 <= X1 <= 1）层5和第二层 Al x X2 Ga 1-X2 N半导体（0 <= X2 <= 1）层7.在该半导体光产生装置中，光产生区3由III 氮化物半导体，并且包括InAlGAN半导体层。 第一Al X1 N 1 Ga 1-X1 N半导体（0 <= X1 <= 1）层5掺杂有诸如镁的p型掺杂剂，并且是 设置在发光区域3上。第二Al X2 X2 Ga 1-X2 N半导体层7的p型浓度比第一Al X1 < 第一Al 2 N 2 Ga 1-X 2 N半导体（0 <= X2 <= 1 / 1）层7设置在发光区域3和第一Al 1 N 1 Ga 1-X1 N半导体层5之间。

公开(公告)号：US07309394B2

公开(公告)日：2007-12-18

申请号：US10626661

申请日：2003-07-25

申请人： Hideki Hirayama ,  Sohachi Iwai ,  Yoshinobu Aoyagi

发明人： Hideki Hirayama ,  Sohachi Iwai ,  Yoshinobu Aoyagi

IPC分类号： C30B29/30

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： An object is to provide an ultraviolet light-emitting device in which a p-type semiconductor which has high conductivity and an emission peak in ultraviolet region, and emits light efficiently is used. The p-type semiconductor is prepared by supplying a p-type impurity raw material at the same time or after starting supply of predetermined types of crystal raw materials, besides before starting supply of other types of crystal raw materials than the predetermined types of crystal raw materials in one cycle wherein all the types of crystal raw materials of the plural types of crystal raw materials are supplied in one time each in case of making crystal growth by supplying alternately the plural types of crystal raw materials in a pulsed manner.

摘要翻译： 本发明的目的是提供一种紫外线发光装置，其中使用在紫外线区域具有高导电性和发光峰值并有效发光的p型半导体。 p型半导体是通过在预定类型的晶体原料之前同时或者开始供应预定类型的晶体原料之后提供p型杂质原料而制备的，此外，除了开始供应比预定类型的晶体原料之外的其它类型的晶体原料 在一个循环中的材料，其中在通过以脉冲方式交替提供多种类型的晶体原料进行晶体生长的情况下，一次性地供给多种类型的晶体原料的所有类型的晶体原料。

公开(公告)号：US07294867B2

公开(公告)日：2007-11-13

申请号：US11032230

申请日：2005-01-11

申请人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

发明人： Katsushi Akita ,  Takao Nakamura ,  Hideki Hirayama

IPC分类号： H01L33/00 ,  H01L29/24

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06

摘要： The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7. In this semiconductor light generating device, the light generating region 3 is made of III-nitride semiconductor, and includes a InAlGaN semiconductor layer. The first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 is doped with a p-type dopant, such as magnesium, and is provided on the light generating region 3. The second AlX2Ga1-X2N semiconductor layer 7 has a p-type concentration smaller than the first AlX1Ga1-X1N semiconductor layer 5. The second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer 7 is provided between the light generating region 3 and the first AlX1Ga1-X1N semiconductor layer 5.

摘要翻译： 半导体光产生装置包括发光区域3，第一Al X1 X 1 Ga 1-X1 N半导体（0 <= X 1 <= 1）层5和 第二Al x X2 Ga 1-X2 N半导体（0 <= X 2 <= 1）层7。 在该半导体发光元件中，发光区域3由III族氮化物半导体构成，具有InAlGaN半导体层。 第一Al X1 X1＆lt; 1-X1＆gt; N半导体（0 <= X 1 <= 1）层5掺杂有诸如镁的p型掺杂剂，以及 设置在发光区域3上。 第二Al X2 X2 Ga 1-X2 N半导体层7的p型浓度比第一Al X1 Ga 1 -X1 N半导体层5。 第二Al X2 X2 Ga 1-X2 N半导体（0 <= X 2 <= 1）层7设置在发光区3和第一Al _{X1 1-X1 N半导体层5。}

公开(公告)号：US07244385B2

公开(公告)日：2007-07-17

申请号：US11033296

申请日：2005-01-12

申请人： Kanna Aoki ,  Hideki Hirayama ,  Yoshinobu Aoyagi ,  Hideki Miyazaki

发明人： Kanna Aoki ,  Hideki Hirayama ,  Yoshinobu Aoyagi ,  Hideki Miyazaki

IPC分类号： H02N99/00 ,  B23Q3/15

CPC分类号： B82Y20/00 ,  G02B6/1225 ,  G02B6/13

摘要： The present invention provides a practically effective three-dimensional photonic crystal, and a process for the production thereof as well as a probe used therefor wherein a three-dimensional photonic crystal comprises a plurality of two-dimensional photonic crystal plates each provided with through holes and different types of two-dimensional photonic crystals; a plurality of positioning members to be located in the above-described through holes in the plurality of the two-dimensional photonic crystal plates; and the above-described positioning members being located in the through holes in the two-dimensional photonic crystal plates adjacent to each other among the pluralities of two-dimensional photonic crystal plates to be laminated in such that the pluralities of the two-dimensional photonic crystal plates obtain a periodic structure in response to wavelengths of light.

摘要翻译： 本发明提供一种实用有效的三维光子晶体及其制造方法及其用途的探针，其中三维光子晶体包括多个二维光子晶体板，每个二维光子晶体板均设有通孔， 不同类型的二维光子晶体; 多个定位构件，位于多个二维光子晶体板的上述通孔中; 并且上述定位构件位于要层叠的多个二维光子晶体板中彼此相邻的二维光子晶体板的通孔中，使得多个二维光子晶体 板获得响应于光的波长的周期性结构。