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    Method and device for multiple input-multiple output detection
    71.
    发明授权
    Method and device for multiple input-multiple output detection 有权
    多输入多输出检测方法和装置

    公开(公告)号：US08615057B2

    公开(公告)日：2013-12-24

    申请号：US12831933

    申请日：2010-07-07

    申请人： Min Li

    发明人： Min Li

    IPC分类号： H04L27/06

    CPC分类号： H04L25/03203 ,  H04L25/03197 ,  H04L25/03242 ,  H04L27/2647 ,  H04L2025/0342 ,  H04L2025/03426

    摘要： A method and device for detecting a symbol transmitted over a communication channel in a multiple input-multiple output communication system are disclosed. In one aspect, the method includes receiving a symbol transmitted over a communication channel of a multiple input-multiple output communication system. The method may also include searching a subset of possible transmitted symbols, the subset having a predetermined size dependent on properties of the communication channel. The method may also include deciding to which symbol of the subset the received symbol corresponds.

    摘要翻译： 公开了一种用于检测通过多输入多输出通信系统中的通信信道发送的符号的方法和装置。 一方面，该方法包括接收通过多输入多输出通信系统的通信信道发送的符号。 该方法还可以包括搜索可能的传输符号的子集，该子集具有取决于通信信道的属性的预定大小。 该方法还可以包括决定所接收的符号对应的子集的哪个符号。

    INTERFACE TREATMENT METHOD FOR GERMANIUM-BASED DEVICE
    72.
    发明申请
    INTERFACE TREATMENT METHOD FOR GERMANIUM-BASED DEVICE 有权
    用于基于锗的器件的接口处理方法

    公开(公告)号：US20130309875A1

    公开(公告)日：2013-11-21

    申请号：US13702562

    申请日：2012-06-14

    申请人： Ru Huang ,  Min Li ,  Xia An ,  Ming Li ,  Meng Lin ,  Xing Zhang

    发明人： Ru Huang ,  Min Li ,  Xia An ,  Ming Li ,  Meng Lin ,  Xing Zhang

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02052 ,  H01L21/306

    摘要： Disclosed herein is an interface treatment method for germanium-based device, which belongs to the field of manufacturing technologies of ultra large scaled integrated (ULSI) circuits. In the method, the natural oxide layer on ther surface of the germanium-based substrate is removed by using a concentrated hydrochloric acid solution having a mass percentage concentration of 15%˜36%, and dangling bonds of the surface are performed a passivation treatment by using a diluted hydrochloric acid solution having a mass percentage concentration of 5%˜10% so as to form a stable passivation layer on the surface. This method makes a good foundation for depositing a high-K (high dielectric constant) gate dielectric on the surface of the germanium-based substrate after cleaning and passivating, enhances quality of the interface between the gate dielectric and the substrate, and improves the electrical performance of germanium-based MOS device.

    摘要翻译： 本文公开了一种锗系器件的接口处理方法，属于超大规模集成（ULSI）电路制造技术领域。 在该方法中，通过使用质量百分比浓度为15％〜36％的浓盐酸溶液除去锗基底板的表面上的天然氧化物层，并且通过以下方式进行钝化处理： 使用质量百分比浓度为5％〜10％的稀盐酸溶液，以在表面上形成稳定的钝化层。 该方法为清洗和钝化后在锗基基板表面上沉积高K（高介电常数）栅极电介质提供了良好的基础，提高了栅极电介质和基板之间界面的质量，改善了电气 锗系MOS器件的性能。

    EFFICIENT EXECUTION OF JOBS IN A SHARED POOL OF RESOURCES
    73.
    发明申请
    EFFICIENT EXECUTION OF JOBS IN A SHARED POOL OF RESOURCES 审中-公开
    在资源共享中有效执行职位

    公开(公告)号：US20130290957A1

    公开(公告)日：2013-10-31

    申请号：US13590881

    申请日：2012-08-21

    申请人： Min Li ,  Prasenjit Sarkar ,  Dinesh K. Subhraveti

    发明人： Min Li ,  Prasenjit Sarkar ,  Dinesh K. Subhraveti

    IPC分类号： G06F9/455

    CPC分类号： G06F9/5066

    摘要： Embodiments of the invention relate to a shared group of resource and efficient processing of one or more jobs in the share group of resources. Tools are provided in the shared group of resource to assess and organize a topology of the shared resources, including physical and virtual machines, as well as storage devices. The topology is stored in a known location and utilized for efficient assignment of one or more jobs responsive to the hierarchy.

    摘要翻译： 本发明的实施例涉及在共享资源组中的一个或多个作业的资源和有效处理的共享组。 在共享资源组中提供了工具，以评估和组织共享资源的拓扑，包括物理和虚拟机以及存储设备。 该拓扑存储在已知位置中，用于有效地分配响应层级的一个或多个作业。

    Method of manufacturing a CPP structure with enhanced GMR ratio
    75.
    发明授权
    Method of manufacturing a CPP structure with enhanced GMR ratio 有权
    制造具有增强的GMR比的CPP结构的方法

    公开(公告)号：US08484830B2

    公开(公告)日：2013-07-16

    申请号：US13065966

    申请日：2011-04-04

    申请人： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng

    发明人： Kunliang Zhang ,  Min Li ,  Yu-Hsia Chen ,  Chyu-Jiuh Torng

    IPC分类号： G11B5/187 ,  G11B5/23

    CPC分类号： H01L43/08 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3259 ,  H01F10/3272 ,  H01F10/3281 ,  H01F10/3295 ,  H01F41/18 ,  H01F41/303 ,  H01L43/10 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T428/1114 ,  Y10T428/1129 ,  Y10T428/115

    摘要： A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies, from 85 to 100 atomic % to maintain low Hc and λs values. A small positive magnetostriction value in a Co75Fe25 layer is used to offset a negative magnetostriction value in a Ni90Fe10layer. The CoFe layer is deposited on a sensor stack in which a seed layer, AFM layer, pinned layer, and non-magnetic spacer layer are sequentially formed on a substrate. After a NiFe layer and capping layer are sequentially deposited on the CoFe layer, the sensor stack is patterned to give a sensor element with top and bottom surfaces and a sidewall connecting the top and bottom surfaces. Thereafter, a dielectric layer is formed adjacent to the sidewalls.

    摘要翻译： 公开了一种具有CoFe / NiFe复合自由层的CPP-GMR自旋阀，其中CoFe层的Fe含量为20〜70原子％，NiFe层中的Ni含量为85〜100原子％，保持低Hc 和lambdas值。 使用Co75Fe25层中的小的正磁致伸缩值来抵消Ni90Fe10层中的负磁致伸缩值。 CoFe层沉积在传感器堆叠上，其中种子层，AFM层，钉扎层和非磁性间隔层依次形成在基底上。 在NiFe层和覆盖层顺序地沉积在CoFe层上之后，传感器堆叠被图案化以给出具有顶表面和底表面的传感器元件以及连接顶表面和底表面的侧壁。 此后，与侧壁相邻地形成电介质层。

    High data rate magnetic writer design
    76.
    发明授权
    High data rate magnetic writer design 有权
    高数据率磁性写入器设计

    公开(公告)号：US08446689B2

    公开(公告)日：2013-05-21

    申请号：US13136182

    申请日：2011-07-26

    申请人： Tai Min ,  Lijie Guan ,  Min Li ,  Jiun-Ting Lee

    发明人： Tai Min ,  Lijie Guan ,  Min Li ,  Jiun-Ting Lee

    IPC分类号： G11B5/127

    CPC分类号： C25D5/022 ,  G11B5/3116 ,  G11B5/3163

    摘要： A high speed magnetic data writer containing a stitched pole tip that works in conjunction with the main pole is disclosed, together with a process for their manufacture. The material composition of each of these two sub-structures is slightly different; one sub-structure is optimized for high magnetic damping while the other sub-structure is optimized for high saturation magnetization.

    摘要翻译： 公开了一种包含与主极结合工作的缝合针尖的高速磁数据写入器及其制造方法。 这两个子结构中的每一个的材料组成略有不同; 一个子结构被优化用于高磁阻尼，而另一个子结构被优化用于高饱和磁化强度。

    TMR device with novel free layer structure
    79.
    发明授权
    TMR device with novel free layer structure 有权
    TMR器件具有新颖的自由层结构

    公开(公告)号：US08385027B2

    公开(公告)日：2013-02-26

    申请号：US13317485

    申请日：2011-10-19

    申请人： Tong Zhao ,  Hui-Chuan Wang ,  Min Li ,  Kunliang Zhang

    发明人： Tong Zhao ,  Hui-Chuan Wang ,  Min Li ,  Kunliang Zhang

    IPC分类号： G11B5/33 ,  G11B5/127 ,  H01L29/82

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    摘要： A composite free layer having a FL1/insertion/FL2 configuration is disclosed for achieving high dR/R, low RA, and low λ in TMR or GMR sensors. Ferromagnetic FL1 and FL2 layers have (+) λ and (−) λ values, respectively. FL1 may be CoFe, CoFeB, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, or Nb. FL2 may be CoFe, NiFe, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, Nb, or B. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Cr, or B. In a TMR stack with a MgO tunnel barrier, dR/R>60%, λ˜1×10−6, and RA=1.2 ohm-um2 when FL1 is CoFe/CoFeB/CoFe, FL2 is CoFe/NiFe/CoFe, and the insertion layer is CoTa or CoFeBTa.

    摘要翻译： 公开了具有FL1 /插入/ FL2配置的复合自由层，用于在TMR或GMR传感器中实现高dR / R，低RA和低λ。 铁磁FL1和FL2层分别具有（+）λ和（ - ）λ值。 FL1可以是CoFe，CoFeB或其与Ni，Ta，Mn，Ti，W，Zr，Hf，Tb或Nb的合金。 FL2可以是CoFe，NiFe或其与Ni，Ta，Mn，Ti，W，Zr，Hf，Tb，Nb或B的合金。薄插入层包括至少一种诸如Co，Fe和Ni 以及选自Ta，Ti，W，Zr，Hf，Nb，Mo，V，Cr或B中的至少一种非磁性元素。在具有MgO隧道势垒的TMR堆叠中，dR / R> 60％，λ 〜1×10-6，当FL1为CoFe / CoFeB / CoFe时，RA = 1.2ohm-um2，FL2为CoFe / NiFe / CoFe，插入层为CoTa或CoFeBTa。