公开(公告)号：US09831756B2

公开(公告)日：2017-11-28

申请号：US13610417

申请日：2012-09-11

申请人： Kenji Komiya ,  Shuji Wakaiki ,  Akihide Shibata ,  Hiroshi Iwata

发明人： Kenji Komiya ,  Shuji Wakaiki ,  Akihide Shibata ,  Hiroshi Iwata

IPC分类号： H02M3/158 ,  H02M1/088 ,  H02M7/5387 ,  H02M1/00

CPC分类号： H02M1/088 ,  H02M3/1582 ,  H02M3/1588 ,  H02M7/5387 ,  H02M2001/0051 ,  Y02B70/1466 ,  Y02T10/7258

摘要： The switching power supply device is provided with a high-withstand voltage first transistor, a first electrode of which being connected to a first node; a low-withstand voltage second transistor, a first electrode of which being connected to a second electrode of the first transistor, and a second electrode of which being connected to a second node; and a drive circuit. Each of the first and second transistors has a parasitic diode connected in the forward direction between the second and first electrodes. The drive circuit, in a case where electrical current is to flow from the first node to the second node, turns on the first and second transistors, and, in a case where electrical current is to flow from the second node to the first node, turns on the first transistor, and turns off the second transistor.

公开(公告)号：US20170270831A1

公开(公告)日：2017-09-21

申请号：US15450720

申请日：2017-03-06

申请人： Yoshihiro NORIKANE ,  Tatsuya Niimi ,  Takashi Matsumura ,  Hiroshi Iwata ,  Hiroyuki Naito

发明人： Yoshihiro NORIKANE ,  Tatsuya Niimi ,  Takashi Matsumura ,  Hiroshi Iwata ,  Hiroyuki Naito

IPC分类号： G09B23/30 ,  B33Y80/00 ,  B33Y30/00 ,  B33Y10/00 ,  B29C67/00

CPC分类号： G09B23/30 ,  B29C64/112 ,  B29C64/20 ,  B29K2105/0032 ,  B29K2105/0061 ,  B29K2995/002 ,  B29L2031/40 ,  B29L2031/7532 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y70/00 ,  B33Y80/00

摘要： A solid freeform fabrication object includes a hydrogel including a polymer, water, and a coloring material inclusion substance.

公开(公告)号：US09590617B2

公开(公告)日：2017-03-07

申请号：US14110687

申请日：2012-04-05

申请人： Kenji Komiya ,  Shuji Wakaiki ,  Kohtaroh Kataoka ,  Masaru Nomura ,  Yoshiji Ohta ,  Hiroshi Iwata

发明人： Kenji Komiya ,  Shuji Wakaiki ,  Kohtaroh Kataoka ,  Masaru Nomura ,  Yoshiji Ohta ,  Hiroshi Iwata

IPC分类号： H03K17/30 ,  H03K17/10 ,  H03K17/14 ,  H03K17/12 ,  H02M3/158 ,  H02M1/088

CPC分类号： H03K17/302 ,  H02M1/088 ,  H02M3/158 ,  H03K17/102 ,  H03K17/122 ,  H03K17/145

摘要： A semiconductor device includes a high breakdown voltage, high Gm first transistor and a low breakdown voltage, low Gm second transistor connected in series between first and second nodes, and a low breakdown voltage, high Gm third transistor connected to the second transistor in parallel. When the second transistor is turned on, the first transistor turns on, and furthermore, when the third transistor is turned on, an electrically conducting state is established between the first and second nodes. The second, low breakdown voltage transistor is turned on to turn on the first, high breakdown voltage transistor, and a turn-on time with only limited variation can be achieved.

摘要翻译： 半导体器件包括高击穿电压，高Gm第一晶体管和低击穿电压，串联连接在第一和第二节点之间的低Gm第二晶体管和低击穿电压，并联连接到第二晶体管的高Gm第三晶体管。 当第二晶体管导通时，第一晶体管导通，此外，当第三晶体管导通时，在第一和第二节点之间建立导电状态。 第二个低击穿电压晶体管导通，以接通第一个高耐压晶体管，并且可以实现只有有限变化的导通时间。

公开(公告)号：US09079501B2

公开(公告)日：2015-07-14

申请号：US13595661

申请日：2012-08-27

申请人： Kenji Komiya ,  Akihide Shibata ,  Masaru Nomura ,  Yoshiji Ohta ,  Hiroshi Iwata

发明人： Kenji Komiya ,  Akihide Shibata ,  Masaru Nomura ,  Yoshiji Ohta ,  Hiroshi Iwata

IPC分类号： G05D1/00 ,  B60L1/00 ,  B60L1/06 ,  B60L1/16 ,  B60L3/00 ,  B60L3/04 ,  B60L8/00 ,  B60L11/18 ,  B60L15/00

CPC分类号： B60L1/003 ,  B60L1/06 ,  B60L1/16 ,  B60L3/0046 ,  B60L3/04 ,  B60L8/003 ,  B60L11/1859 ,  B60L11/1868 ,  B60L15/007 ,  B60L2200/26 ,  B60L2210/10 ,  B60L2240/34 ,  B60L2240/36 ,  B60L2240/547 ,  B60L2240/549 ,  Y02T10/645 ,  Y02T10/7005 ,  Y02T10/7011 ,  Y02T10/7066 ,  Y02T10/7083 ,  Y02T10/7216 ,  Y02T90/16

摘要： A vehicle driving device is arranged such that in accordance with an instruction signal from the outside, a first battery managing section outputs, to the outside, a signal related to charging/discharging control for a first battery.

摘要翻译： 车辆驱动装置被布置成使得根据来自外部的指令信号，第一电池管理部分向外部输出与第一电池的充电/放电控制相关的信号。

公开(公告)号：US09071154B2

公开(公告)日：2015-06-30

申请号：US13665382

申请日：2012-10-31

申请人： Hiroshi Iwata ,  Yoshifumi Yaoi ,  Kenji Komiya ,  Masaru Nomura ,  Yoshiji Ohta

发明人： Hiroshi Iwata ,  Yoshifumi Yaoi ,  Kenji Komiya ,  Masaru Nomura ,  Yoshiji Ohta

IPC分类号： H01M10/44 ,  H02J7/04 ,  H02J1/00 ,  H02J1/10 ,  H01L31/042 ,  H02M7/5383 ,  H02M3/335 ,  H02M3/24 ,  H02J7/02 ,  H02M7/30 ,  H02J7/00 ,  B60L8/00 ,  B60L11/18

CPC分类号： H02M3/3353 ,  B60L8/003 ,  B60L11/1868 ,  B60L2210/12 ,  B60L2210/14 ,  B60L2240/526 ,  B60L2240/527 ,  H02J7/0054 ,  H02J7/022 ,  H02J2007/0059 ,  H02M7/30 ,  Y02T10/7005 ,  Y02T10/7066 ,  Y02T10/7083 ,  Y02T10/7225 ,  Y02T10/7233

摘要： This DC/DC converter includes a first DC/DC converter, and a second DC/DC converter for carrying out a DC/DC conversion of voltage supplied from the first DC/DC converter. One of either the first DC/DC converter or the second DC/DC converter is a fixed-factor DC/DC converter, and the other of either the first DC/DC converter or the second DC/DC converter is a variable-factor DC/DC converter.

摘要翻译： 该DC / DC转换器包括第一DC / DC转换器和用于对从第一DC / DC转换器提供的电压进行DC / DC转换的第二DC / DC转换器。 第一DC / DC转换器或第二DC / DC转换器之一是固定因数DC / DC转换器，第一DC / DC转换器或第二DC / DC转换器中的另一个是可变因数DC / DC转换器。

公开(公告)号：US08252164B2

公开(公告)日：2012-08-28

申请号：US13113680

申请日：2011-05-23

申请人： Samuel Martin ,  Xiangfeng Duan ,  Katsumasa Fujii ,  James M. Hamilton ,  Hiroshi Iwata ,  Francisco Leon ,  Jeffrey Miller ,  Tetsu Negishi ,  Hiroshi Ohki ,  J. Wallace Parce ,  Cheri X. Y. Pereira ,  Paul John Schuele ,  Akihide Shibata ,  David P. Stumbo ,  Yasunobu Okada

发明人： Samuel Martin ,  Xiangfeng Duan ,  Katsumasa Fujii ,  James M. Hamilton ,  Hiroshi Iwata ,  Francisco Leon ,  Jeffrey Miller ,  Tetsu Negishi ,  Hiroshi Ohki ,  J. Wallace Parce ,  Cheri X. Y. Pereira ,  Paul John Schuele ,  Akihide Shibata ,  David P. Stumbo ,  Yasunobu Okada

IPC分类号： C25D13/02

CPC分类号： H01L29/0665 ,  B82B3/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/0673 ,  Y10S977/883

摘要： The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.

摘要翻译： 本发明提供了用于纳米线对准和沉积的方法和系统。 使用通电（例如，交流电场）来使纳米线与电极对准和关联。 通过调节激励，纳米线耦合到电极，使得它们在随后的洗涤和干燥步骤期间保持在适当的位置。 本发明还提供了将纳米线从一个衬底转移到另一个衬底以便制备各种器件衬底的方法。 本发明还提供了用于监测和控制在特定电极对上沉积的纳米线的数量的方法，以及用于操纵溶液中的纳米线的方法。

公开(公告)号：US20120112084A1

公开(公告)日：2012-05-10

申请号：US13289481

申请日：2011-11-04

申请人： Katsuya YAMADA ,  Yasuaki Kawasaki ,  Hiroshi Iwata

发明人： Katsuya YAMADA ,  Yasuaki Kawasaki ,  Hiroshi Iwata

IPC分类号： G01T1/24

CPC分类号： G01T1/2018

摘要： According to one embodiment, a radiation detection apparatus includes a radiation detection panel, a support member, a circuit board, a flexible circuit board, a housing, a connecting member, a thermally radiative member, and a thermally conductive member. The support member supports the radiation detection panel on one surface thereof. The circuit board is supported by other surface of the support member, and drives the radiation detection panel. The flexible circuit board electrically connects the radiation detection panel with the circuit board, and on which an integrated circuit is mounted. The housing has thermal insulation, and a part of which is provided with an opening. The connecting member is connected to the support member and the housing. The thermally radiative member is located outside the housing and extends through the opening. The thermally radiative member is opposed to the integrated circuit, and shields an electromagnetic field that leaks from the opening.

摘要翻译： 根据一个实施例，放射线检测装置包括放射线检测面板，支撑构件，电路板，柔性电路板，壳体，连接构件，热辐射构件和导热构件。 支撑构件在其一个表面上支撑放射线检测面板。 电路板由支撑构件的其他表面支撑，并驱动辐射检测面板。 柔性电路板将辐射检测面板与电路板电连接，并且其上安装有集成电路。 壳体具有绝热，其一部分设有开口。 连接构件连接到支撑构件和壳体。 热辐射构件位于壳体外部并延伸穿过开口。 热辐射构件与集成电路相对，并屏蔽从开口泄漏的电磁场。

公开(公告)号：US08153207B2

公开(公告)日：2012-04-10

申请号：US12488378

申请日：2009-06-19

申请人： Nobutoshi Arai ,  Hiroshi Iwata

发明人： Nobutoshi Arai ,  Hiroshi Iwata

IPC分类号： C23C14/48 ,  C23C14/58 ,  C23C14/08 ,  C23C14/10 ,  C23C14/18

CPC分类号： C23C26/00 ,  H01L21/31155 ,  H01L29/42332 ,  H01L29/8616 ,  Y10T428/24942 ,  Y10T428/25

摘要： A silicon oxide of a film thickness of about 50 nm is formed on a surface of a silicon substrate by thermal oxidation. Silver is implanted into the silicon oxide with implantation energy of about 30 keV by a negative ion implantation method. By subjecting the silicon oxide, into which the silver has been implanted, to heat treatment at a temperature of not lower than 200° C. and lower than the melting point of silver, silver particles are formed. By oxidizing the surface portions of the fine particles by heat treatment in an oxidizing atmosphere, silver oxide is formed as a coating layer.

摘要翻译： 通过热氧化在硅衬底的表面上形成膜厚约50nm的氧化硅。 通过负离子注入方法将银注入到具有约30keV的注入能量的氧化硅中。 通过使已经注入银的氧化硅在不低于200℃并低于银的熔点的温度下进行热处理，形成银颗粒。 通过在氧化气氛中进行热处理来氧化细颗粒的表面部分，形成氧化银作为涂层。

公开(公告)号：US07978515B2

公开(公告)日：2011-07-12

申请号：US12052335

申请日：2008-03-20

申请人： Hiroshi Iwata ,  Yoshiji Ohta

发明人： Hiroshi Iwata ,  Yoshiji Ohta

IPC分类号： G11C11/34

CPC分类号： G11C16/26

摘要： A semiconductor storage device includes a first memory cell for storing two kinds of states, a second memory cell for storing two kinds of states, and a sense amplifier for detecting a potential difference between voltages equivalent to readout currents of the first and second memory cells, respectively. Either one of information data “0” or data “1”, which is stored in combination of the first and second memory cells, is read out by detecting the potential difference equivalent to the readout current difference between the first and second memory cells.

摘要翻译： 半导体存储装置包括用于存储两种状态的第一存储单元，用于存储两种状态的第二存储单元和用于检测与第一和第二存储单元的读出电流相当的电压之间的电位差的读出放大器， 分别。 通过检测与第一和第二存储单元之间的读出电流差相当的电位差来读出存储在第一和第二存储单元组合中的信息数据“0”或数据“1”中的任何一个。

公开(公告)号：US07968474B2

公开(公告)日：2011-06-28

申请号：US11979949

申请日：2007-11-09

申请人： Samuel Martin ,  Xiangfeng Duan ,  Katsumasa Fujii ,  James M. Hamilton ,  Hiroshi Iwata ,  Francisco Leon ,  Jeffrey Miller ,  Tetsu Negishi ,  Hiroshi Ohki ,  J. Wallace Parce ,  Cheri X. Y. Pereira ,  Paul John Schuele ,  Akihide Shibata ,  David P. Stumbo ,  Yasunobu Okada

发明人： Samuel Martin ,  Xiangfeng Duan ,  Katsumasa Fujii ,  James M. Hamilton ,  Hiroshi Iwata ,  Francisco Leon ,  Jeffrey Miller ,  Tetsu Negishi ,  Hiroshi Ohki ,  J. Wallace Parce ,  Cheri X. Y. Pereira ,  Paul John Schuele ,  Akihide Shibata ,  David P. Stumbo ,  Yasunobu Okada

IPC分类号： H01L21/71

CPC分类号： H01L29/0665 ,  B82B3/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L29/0673 ,  Y10S977/883

摘要： The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.

摘要翻译： 本发明提供了用于纳米线对准和沉积的方法和系统。 使用通电（例如，交流电场）来使纳米线与电极对准和关联。 通过调节激励，纳米线耦合到电极，使得它们在随后的洗涤和干燥步骤期间保持在适当的位置。 本发明还提供了将纳米线从一个衬底转移到另一个衬底以便制备各种器件衬底的方法。 本发明还提供了用于监测和控制在特定电极对上沉积的纳米线的数量的方法，以及用于操纵溶液中的纳米线的方法。