利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

356 条记录 (耗时 0.035 秒)

    SWITCHING POWER SUPPLY DEVICE, AND INVERTER, CONVERTER, AIR CONDITIONER, SOLAR POWER CONTROLLER, AND AUTOMOBILE EMPLOYING SAME
    2.
    发明申请
    SWITCHING POWER SUPPLY DEVICE, AND INVERTER, CONVERTER, AIR CONDITIONER, SOLAR POWER CONTROLLER, AND AUTOMOBILE EMPLOYING SAME 有权
    切换电源装置，逆变器，转换器，空调，太阳能电力控制器和使用其的汽车

    公开(公告)号：US20130083580A1

    公开(公告)日：2013-04-04

    申请号：US13610417

    申请日：2012-09-11

    申请人： Kenji KOMIYA ,  Shuji Wakaiki ,  Akihide Shibata ,  Hiroshi Iwata

    发明人： Kenji KOMIYA ,  Shuji Wakaiki ,  Akihide Shibata ,  Hiroshi Iwata

    IPC分类号： G05F3/02 ,  B60L1/00 ,  F25B49/00 ,  H02M7/537

    CPC分类号： H02M1/088 ,  H02M3/1582 ,  H02M3/1588 ,  H02M7/5387 ,  H02M2001/0051 ,  Y02B70/1466 ,  Y02T10/7258

    摘要： The switching power supply device is provided with a high-withstand voltage first transistor, a first electrode of which being connected to a first node; a low-withstand voltage second transistor, a first electrode of which being connected to a second electrode of the first transistor, and a second electrode of which being connected to a second node; and a drive circuit. Each of the first and second transistors has a parasitic diode connected in the forward direction between the second and first electrodes. The drive circuit, in a case where electrical current is to flow from the first node to the second node, turns on the first and second transistors, and, in a case where electrical current is to flow from the second node to the first node, turns on the first transistor, and turns off the second transistor.

    摘要翻译： 开关电源装置设置有高耐压第一晶体管，其第一电极连接到第一节点; 低耐压第二晶体管，其第一电极连接到第一晶体管的第二电极，第二电极连接到第二节点; 和驱动电路。 第一和第二晶体管中的每一个具有在第二和第一电极之间沿正向连接的寄生二极管。 在电流从第一节点流向第二节点的情况下，驱动电路导通第一和第二晶体管，并且在电流要从第二节点流向第一节点的情况下， 接通第一晶体管，并关闭第二晶体管。

    SEMICONDUCTOR DEVICE, AND INVERTER, CONVERTER AND POWER CONVERSION DEVICE EMPLOYING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE, AND INVERTER, CONVERTER AND POWER CONVERSION DEVICE EMPLOYING THE SAME 有权
    半导体器件和逆变器，转换器和功率转换器件

    公开(公告)号：US20140028375A1

    公开(公告)日：2014-01-30

    申请号：US14110687

    申请日：2012-04-05

    申请人： Kenji Komiya ,  Shuji Wakaiki ,  Kohtaroh Kataoka ,  Masaru Nomura ,  Yoshiji Ohta ,  Hiroshi Iwata

    发明人： Kenji Komiya ,  Shuji Wakaiki ,  Kohtaroh Kataoka ,  Masaru Nomura ,  Yoshiji Ohta ,  Hiroshi Iwata

    IPC分类号： H03K17/30

    CPC分类号： H03K17/302 ,  H02M1/088 ,  H02M3/158 ,  H03K17/102 ,  H03K17/122 ,  H03K17/145

    摘要： A semiconductor device includes a high breakdown voltage, high Gm first transistor and a low breakdown voltage, low Gm second transistor connected in series between first and second nodes, and a low breakdown voltage, high Gm third transistor connected to the second transistor in parallel. When the second transistor is turned on, the first transistor turns on, and furthermore, when the third transistor is turned on, an electrically conducting state is established between the first and second nodes. The second, low breakdown voltage transistor is turned on to turn on the first, high breakdown voltage transistor, and a turn-on time with only limited variation can be achieved.

    摘要翻译： 半导体器件包括高击穿电压，高Gm第一晶体管和低击穿电压，串联连接在第一和第二节点之间的低Gm第二晶体管和低击穿电压，并联连接到第二晶体管的高Gm第三晶体管。 当第二晶体管导通时，第一晶体管导通，此外，当第三晶体管导通时，在第一和第二节点之间建立导电状态。 第二个低击穿电压晶体管导通，以接通第一个高耐压晶体管，并且可以实现只有有限变化的导通时间。