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    Laser-dominated laser scribing and plasma etch hybrid wafer dicing
    71.
    发明授权
    Laser-dominated laser scribing and plasma etch hybrid wafer dicing 有权
    以激光为主的激光划线和等离子体蚀刻混合晶圆切片

    公开(公告)号：US08975163B1

    公开(公告)日：2015-03-10

    申请号：US14249891

    申请日：2014-04-10

    申请人： Wei-Sheng Lei ,  James S. Papanu ,  Brad Eaton ,  Ajay Kumar

    发明人： Wei-Sheng Lei ,  James S. Papanu ,  Brad Eaton ,  Ajay Kumar

    IPC分类号： H01L21/46 ,  H01L21/78 ,  H01L23/544

    CPC分类号： H01L21/78 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68327

    摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer comprising a plurality of integrated circuits involves forming a mask above the semiconductor wafer. The mask includes a layer covering and protecting the integrated circuits. The semiconductor wafer has a thickness. The method also involves laser scribing the mask and a majority of the thickness of the semiconductor wafer to provide scribe lines in the mask and the semiconductor wafer. The scribe lines are formed between the integrated circuits. The method also involves plasma etching the semiconductor wafer through the scribe lines to singulate the integrated circuits.

    摘要翻译： 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 在一个示例中，包括多个集成电路的半导体晶片的切割方法包括在半导体晶片上形成掩模。 掩模包括覆盖并保护集成电路的层。 半导体晶片具有厚度。 该方法还包括激光划线掩模和半导体晶片的大部分厚度，以在掩模和半导体晶片中提供划线。 划线在集成电路之间形成。 该方法还涉及通过划线等离子体蚀刻半导体晶片以对集成电路进行分离。

    Hybrid wafer dicing approach using a galvo scanner and linear stage hybrid motion laser scribing process and plasma etch process
    75.
    发明授权
    Hybrid wafer dicing approach using a galvo scanner and linear stage hybrid motion laser scribing process and plasma etch process 有权
    使用电流扫描器和线性级混合动力激光划线工艺和等离子体蚀刻工艺的混合晶圆切割方法

    公开(公告)号：US09330977B1

    公开(公告)日：2016-05-03

    申请号：US14589823

    申请日：2015-01-05

    申请人： Wei-Sheng Lei ,  Brad Eaton ,  Ajay Kumar

    发明人： Wei-Sheng Lei ,  Brad Eaton ,  Ajay Kumar

    IPC分类号： H01L21/268 ,  H01L21/82 ,  H01L21/3065 ,  H01L21/02 ,  H01L21/67

    CPC分类号： H01L21/67028 ,  H01L21/02057 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3081 ,  H01L21/31105 ,  H01L21/31127 ,  H01L21/32131 ,  H01L21/67092 ,  H01L21/78

    摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the plurality of integrated circuits. The mask is then patterned with a galvo scanner and linear stage hybrid motion laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the plurality of integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the plurality of integrated circuits.

    摘要翻译： 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 在一个示例中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模由覆盖并保护多个集成电路的层构成。 然后用电流计扫描器和线性级混合动力激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露多个集成电路之间的半导体晶片的区域。 然后通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对多个集成电路进行分割。

    Dicing processes for thin wafers with bumps on wafer backside
    77.
    发明授权
    Dicing processes for thin wafers with bumps on wafer backside 有权
    在晶片背面具有凸起的薄晶片的切割工艺

    公开(公告)号：US09275902B2

    公开(公告)日：2016-03-01

    申请号：US14226038

    申请日：2014-03-26

    申请人： Wei-Sheng Lei ,  James S. Papanu ,  Aparna Iyer ,  Brad Eaton ,  Ajay Kumar

    发明人： Wei-Sheng Lei ,  James S. Papanu ,  Aparna Iyer ,  Brad Eaton ,  Ajay Kumar

    IPC分类号： H01L21/78 ,  H01L23/544

    CPC分类号： H01L21/78 ,  H01L21/3065 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2224/11 ,  H01L2224/16145 ,  H01L2224/16225

    摘要： Approaches for front side laser scribe plus backside bump formation and laser scribe and plasma etch dicing process are described. For example, a method of dicing a semiconductor wafer having integrated circuits on a front side thereof involves forming first scribe lines on the front side, between the integrated circuits, with a first laser scribing process. The method also involves forming arrays of metal bumps on a backside of the semiconductor wafer, each array corresponding to one of the integrated circuits. The method also involves forming second scribe lines on the backside, between the arrays of metal bumps, with a second laser scribing process, wherein the second scribe lines are aligned with the first scribe lines. The method also involves plasma etching the semiconductor wafer through the second scribe lines to singulate the integrated circuits.

    摘要翻译： 描述了用于前侧激光划片加背面凸块形成和激光划线和等离子体蚀刻切割工艺的方法。 例如，在前侧具有集成电路的半导体晶片的切割方法包括在第一激光划线工序之间，在集成电路之间的正面侧形成第一划线。 该方法还涉及在半导体晶片的背面形成金属凸块阵列，每​​个阵列对应于一个集成电路。 该方法还涉及在金属凸块阵列之间的背侧，第二激光划线工艺之间形成第二刻划线，其中第二刻划线与第一划刻线对准。 该方法还包括通过第二划线等离子体蚀刻半导体晶片以对集成电路进行分离。

    Method of die singulation using laser ablation and induction of internal defects with a laser
    79.
    发明授权
    Method of die singulation using laser ablation and induction of internal defects with a laser 有权
    使用激光烧蚀和激光诱导内部缺陷的芯片切割方法

    公开(公告)号：US09165832B1

    公开(公告)日：2015-10-20

    申请号：US14320419

    申请日：2014-06-30

    申请人： James S. Papanu ,  Wei-Sheng Lei ,  Jungrae Park ,  Alexander Lerner ,  Brad Eaton ,  Ajay Kumar

    发明人： James S. Papanu ,  Wei-Sheng Lei ,  Jungrae Park ,  Alexander Lerner ,  Brad Eaton ,  Ajay Kumar

    IPC分类号： H01L21/00 ,  H01L21/78 ,  H01L21/304 ,  H01L21/268 ,  H01L21/683

    CPC分类号： H01L21/78 ,  H01L21/268 ,  H01L21/31105 ,  H01L21/32131 ,  H01L21/67207 ,  H01L21/6836 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method and system of hybrid laser dicing are described. In one embodiment, a method includes focusing a laser beam inside a substrate in regions between integrated circuits, inducing defects inside the substrate in the regions. The method involves patterning a surface of the substrate with a laser scribing process in the regions after inducing the defects in the substrate. The method further involves singulating the integrated circuits at the regions with the induced defects. In another embodiment, a system includes a first laser module configured to focus a laser beam inside a substrate in regions between integrated circuits, inducing defects inside the substrate in the regions. A second laser module is configured to pattern a surface of the substrate with a laser scribing process in the regions after inducing the defects. A tape extender is configured to stretch tape over which the substrate is mounted, singulating the integrated circuits.

    摘要翻译： 描述了混合激光切割的方法和系统。 在一个实施例中，一种方法包括在集成电路之间的区域内将激光束聚焦在衬底内，在区域内的衬底内引起缺陷。 该方法包括在引发衬底中的缺陷之后在区域中用激光划线工艺对衬底的表面进行图案化。 该方法还涉及在具有诱导缺陷的区域处分离集成电路。 在另一个实施例中，系统包括第一激光模块，其被配置为将集束电路之间的区域内的激光束聚焦在衬底内，从而在该区域内的衬底内引起缺陷。 第二激光模块被配置为在引发缺陷之后在区域中用激光划线工艺对基板的表面进行图案化。 磁带扩展器被配置为拉伸安装基板的带，分离集成电路。