公开(公告)号：USRE39261E1

公开(公告)日：2006-09-05

申请号：US10014563

申请日：2001-12-14

申请人： Philip D. Floyd ,  Decai Sun ,  Joel A. Kubby

发明人： Philip D. Floyd ,  Decai Sun ,  Joel A. Kubby

IPC分类号： G02B26/08

CPC分类号： G02B26/10 ,  G02B26/0833 ,  G02B26/0841 ,  G02B26/085

摘要： A solid state laser beam scanning system having a single crystal silicon deflection and scanning mirror integrated with a laser diode. By combining the techniques of deep reactive ion etching of silicon with solder bump bonding techniques, completed and tested laser diodes are integrated with silicon substrates supporting micro-electro-mechanical systems layers.

摘要翻译： 具有与激光二极管集成的单晶硅偏转和扫描反射镜的固态激光束扫描系统。 通过将硅的深反应离子蚀刻技术与焊料凸块接合技术相结合，完成和测试的激光二极管与支持微电子机械系统层的硅衬底集成。

公开(公告)号：USRE38437E1

公开(公告)日：2004-02-24

申请号：US10022917

申请日：2001-12-20

申请人： Philip D. Floyd ,  Decai Sun ,  Joel A. Kubby

发明人： Philip D. Floyd ,  Decai Sun ,  Joel A. Kubby

IPC分类号： G02B2608

CPC分类号： G02B26/085 ,  G02B26/0833 ,  G02B26/0841 ,  G02B26/105 ,  G06K7/10653 ,  H01L2224/16225

摘要： An solid state scanning system having a single crystal silicon deflection mirror and scanning mirror is integrated with a light source. Separation of the micro-electro-mechanical systems and light emitters on separate substrates allows the use of flip-chip and solder bump bonding techniques for mounting of the light sources. The separate substrates are subsequently full wafer bonded together to create an integrated solid state scanning system.

公开(公告)号：US06567448B1

公开(公告)日：2003-05-20

申请号：US09210315

申请日：1998-12-11

申请人： Decai Sun ,  Ross D. Bringans ,  Christopher L. Chua ,  Philip D. Floyd ,  Eric Peeters ,  Joel A. Kubby ,  Alex T. Tran

发明人： Decai Sun ,  Ross D. Bringans ,  Christopher L. Chua ,  Philip D. Floyd ,  Eric Peeters ,  Joel A. Kubby ,  Alex T. Tran

IPC分类号： H01S500

CPC分类号： H01S5/18308 ,  H01S5/021 ,  H01S5/02252 ,  H01S5/02288 ,  H01S5/4087 ,  H01S5/423 ,  H01S5/426

摘要： A III-V compound light emitter is integrated with Si-based actuators. The proposed devices take advantage of the superior optical properties of III-V compounds and the superior mechanical properties of Si, as well as mature fabrication technologies of Si-Micro-Electro-Mechanical Systems (MEMS). The emitter can be a light emitting diode (LED), a vertical cavity surface emitting laser (VCSEL) or an edge emitting laser. Electro or magnetic based actuation from Si-based actuators provides

摘要翻译： III-V复合光发射器与Si基致动器集成。 所提出的器件利用了III-V化合物的优异光学性能和Si的优异机械性能，以及Si-Micro-Electro-Mechanical Systems（MEMS）的成熟制造技术。 发射极可以是发光二极管（LED），垂直腔表面发射激光器（VCSEL）或边缘发射激光器。 基于Si的致动器的基于电或磁的致动器提供

公开(公告)号：US06545335B1

公开(公告)日：2003-04-08

申请号：US09473109

申请日：1999-12-27

申请人： Christopher L. Chua ,  Philip D. Floyd ,  Thomas L. Paoli ,  Decai Sun

发明人： Christopher L. Chua ,  Philip D. Floyd ,  Thomas L. Paoli ,  Decai Sun

IPC分类号： H01L2900

CPC分类号： H01S5/0261 ,  H01S5/18313 ,  H01S5/1833 ,  H01S5/18388

摘要： Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices.

公开(公告)号：US06523928B2

公开(公告)日：2003-02-25

申请号：US09163808

申请日：1998-09-30

申请人： Eric Peeters ,  Jaan Noolandi ,  Raj B. Apte ,  Philip D. Floyd ,  Jonathan A. Small ,  Gregory J. Kovacs ,  Meng H. Lean ,  Armin R. Volkel ,  Steven B. Bolte ,  An-Chang Shi ,  Frederick J. Endicott ,  Gregory B. Anderson ,  Dan A. Hays ,  Joel A. Kubby ,  Warren B. Jackson ,  Karen A. Moffat ,  T. Brian McAneney ,  Richard P. N. Veregin ,  Maria N. V. McDougall ,  Danielle C. Boils ,  Paul D. Szabo

发明人： Eric Peeters ,  Jaan Noolandi ,  Raj B. Apte ,  Philip D. Floyd ,  Jonathan A. Small ,  Gregory J. Kovacs ,  Meng H. Lean ,  Armin R. Volkel ,  Steven B. Bolte ,  An-Chang Shi ,  Frederick J. Endicott ,  Gregory B. Anderson ,  Dan A. Hays ,  Joel A. Kubby ,  Warren B. Jackson ,  Karen A. Moffat ,  T. Brian McAneney ,  Richard P. N. Veregin ,  Maria N. V. McDougall ,  Danielle C. Boils ,  Paul D. Szabo

IPC分类号： B41J215

CPC分类号： B41J2/14 ,  B41J2/211 ,  B41J2202/02

摘要： A method for treating a substrate is disclosed in which a propellant stream is passed through a channel and directed toward a substrate. Substrate pre-marking or post-marking treatment material is controllably introduced into the propellant stream and imparted with sufficient kinetic energy thereby to be made incident upon a substrate. A multiplicity of channels for directing the propellant and treatment material allow for high throughput, high resolution in-situ treatment. Marking materials and treatment materials may be introduced into the channel and mixed therein prior to being made incident on the substrate, or mixed or superimposed on the substrate without registration. One example is a single-pass, full-color printer.

摘要翻译： 公开了一种用于处理基底的方法，其中推进剂流通过通道并指向基底。 将基板预标记或后标记处理材料可控地引入推进剂流中并赋予足够的动能，从而使其入射到基底上。 用于引导推进剂和处理材料的多个通道允许高产量，高分辨率原位处理。 可以将标记材料和处理材料引入通道并在其入射到基板之前混合，或者混合或叠加在基板上而不进行配准。 一个例子是单程全彩色打印机。

公开(公告)号：US06238944B1

公开(公告)日：2001-05-29

申请号：US09471746

申请日：1999-12-21

申请人： Philip D. Floyd

发明人： Philip D. Floyd

IPC分类号： H01L2100

CPC分类号： H01S5/18308 ,  B82Y20/00 ,  H01S5/18311 ,  H01S5/1833 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/2068 ,  H01S5/2072 ,  H01S5/3086 ,  H01S5/3414

摘要： The barrier layers within a quantum well active region of a vertical cavity surface emitting laser can be silicon doped. Under thermal annealing, the silicon doped barrier layers will form disordered regions of the quantum well active region around the remaining non-disordered regions of the quantum well active region. The disordered regions of the quantum well active region will prevent diffusion of injected carriers from the non-disordered, light emitting quantum well active region.

摘要翻译： 垂直腔表面发射激光器的量子阱有源区域内的势垒层可以是硅掺杂的。 在热退火下，硅掺杂阻挡层将在量子阱有源区的剩余非无序区域周围形成量子阱有源区的无序区域。 量子阱有源区域的无序区域将防止注入的载流子从无序的发光量子阱活性区域扩散。

公开(公告)号：US6116756A

公开(公告)日：2000-09-12

申请号：US173329

申请日：1998-10-15

申请人： Eric Peeters ,  Decai Sun ,  G. A. Neville Connell ,  Ross D. Bringans ,  Raj B. Apte ,  Thomas L. Paoli ,  Patrick Y. Maeda ,  David K. Fork ,  Joel A. Kubby ,  Philip D. Floyd

发明人： Eric Peeters ,  Decai Sun ,  G. A. Neville Connell ,  Ross D. Bringans ,  Raj B. Apte ,  Thomas L. Paoli ,  Patrick Y. Maeda ,  David K. Fork ,  Joel A. Kubby ,  Philip D. Floyd

IPC分类号： B81B3/00 ,  B81B7/02 ,  H01L27/15 ,  H01S5/02 ,  H01S5/022 ,  H01S5/183 ,  F21V21/00

CPC分类号： H01S5/02252 ,  H01L27/15 ,  H01S5/183 ,  H01S5/423

摘要： A micro-machined movable light emitting assembly is formed on or from an undoped or pure III-V substrate or formed on or from a doped III-V substrate. The movable light emitting assemblies are to be actuated using force generators, to generate the various mechanical degrees of freedom depending on the type of stage suspension and actuation.

摘要翻译： 微加工的可移动发光组件形成在未掺杂的或纯的III-V衬底上，或者形成在掺杂的III-V衬底上或从掺杂的III-V衬底上形成。 使用力发生器来致动可移动发光组件，以根据舞台悬架和致动的类型产生各种机械自由​​度。

公开(公告)号：US6014240A

公开(公告)日：2000-01-11

申请号：US203442

申请日：1998-12-01

申请人： Philip D. Floyd ,  Decai Sun ,  Joel A. Kubby

发明人： Philip D. Floyd ,  Decai Sun ,  Joel A. Kubby

IPC分类号： G02B26/08 ,  G02B26/10 ,  G06K7/10

CPC分类号： G06K7/10653 ,  G02B26/0833 ,  G02B26/0841 ,  G02B26/085 ,  G02B26/10

摘要： An solid state scanning system having a single crystal silicon deflection mirror and scanning mirror is integrated with a light source. Separation of the micro-electro-mechanical systems and light emitters on separate substrates allows the use of flip-chip and solder bump bonding techniques for mounting of the light sources. The separate substrates are subsequently full wafer bonded together to create an integrated solid state scanning system.

摘要翻译： 具有单晶硅偏转镜和扫描镜的固态扫描系统与光源集成。 在单独的基板上分离微电子机械系统和发光体允许使用倒装芯片和焊料凸块焊接技术来安装光源。 随后将单独的基底全晶片结合在一起以产生一体化固态扫描系统。

公开(公告)号：US5920766A

公开(公告)日：1999-07-06

申请号：US3676

申请日：1998-01-07

申请人： Philip D. Floyd

发明人： Philip D. Floyd

IPC分类号： H01S5/02 ,  H01S5/323 ,  H01S5/40 ,  H01S3/02

CPC分类号： H01S5/0215 ,  H01S5/0213 ,  H01S5/0217 ,  H01S5/32325 ,  H01S5/32341 ,  H01S5/4043 ,  H01S5/4087

摘要： A red laser structure has an inverted or p-side down orientation. The red laser structure is inverted and wafer fused to a blue laser structure to form a red/blue monolithic integrated laser structure. The top semiconductor layer of the inverted red laser structure is a GaInP fusion bonding layer which will be wafer fused to the top semiconductor layer of the blue laser structure which is a GaN cladding/contact layer.

摘要翻译： 红色激光结构具有倒置或p侧向下取向。 红色激光结构被反转，晶片与蓝色激光器结构融合，形成一个红色/蓝色的单片集成激光器结构。 反向红色激光结构的顶部半导体层是GaInP熔合键合层，其将与作为GaN包层/接触层的蓝色激光结构的顶部半导体层晶圆熔合。

公开(公告)号：US5915165A

公开(公告)日：1999-06-22

申请号：US990500

申请日：1997-12-15

申请人： Decai Sun ,  Philip D. Floyd

发明人： Decai Sun ,  Philip D. Floyd

IPC分类号： H01S5/183 ,  H01S3/18

CPC分类号： H01S5/18311 ,  H01S5/18308 ,  H01S5/18338 ,  H01S5/18355 ,  H01S5/2068 ,  H01S5/3063 ,  Y10S438/96

摘要： The present invention relates to a vertical cavity surface emitting laser with an accurately defined and controlled aperture which directs the current path within the laser. Specifically, the oxide regions surrounding the aperture are formed by a pre-oxidation layer disordering process which controls the regions within which oxidation can occur. The present invention allows for the manufacture of highly compact lasers with reproducible optical and electrical characteristics.

摘要翻译： 本发明涉及一种垂直腔表面发射激光器，其具有精确限定和受控的孔径，其引导激光器内的电流路径。 具体地，围绕孔的氧化物区域通过预氧化层无序化方法形成，其控制可发生氧化的区域。 本发明允许制造具有可再现的光学和电学特性的高度紧凑的激光器。