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公开(公告)号：US06674090B1
公开(公告)日：2004-01-06
申请号：US09472754
申请日：1999-12-27
IPC分类号： H01L2906
CPC分类号： H01L29/0649 , H01L21/76264 , H01L21/76281 , H01S5/2215
摘要： An active semiconductor device is made using planar lateral oxidation to define a core region that is surrounded by regions of buried oxidized semiconductor material in. The buried oxidized semiconductor material provides optical waveguiding, and or a defined electrical path.
摘要翻译： 使用平面侧向氧化来制造有源半导体器件，以限定由埋入的氧化半导体材料的区域包围的芯区域。掩埋氧化半导体材料提供光波导和/或定义的电路径。
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公开(公告)号：US6002507A
公开(公告)日：1999-12-14
申请号：US201738
申请日：1998-12-01
申请人： Philip D. Floyd , Decai Sun , Joel A. Kubby
发明人： Philip D. Floyd , Decai Sun , Joel A. Kubby
CPC分类号： G02B26/10 , G02B26/0833 , G02B26/0841 , G02B26/085
摘要： A solid state laser beam scanning system having a single crystal silicon deflection and scanning mirror integrated with a laser diode. By combining the techniques of deep reactive ion etching of silicon with solder bump bonding techniques, completed and tested laser diodes are integrated with silicon substrates supporting micro-electro-mechanical systems layers.
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公开(公告)号：US5886370A
公开(公告)日：1999-03-23
申请号：US864803
申请日：1997-05-29
申请人： Decai Sun , Philip D. Floyd
发明人： Decai Sun , Philip D. Floyd
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/2231 , H01S5/2232 , H01S5/2059 , H01S5/221 , H01S5/2214 , H01S5/2215 , H01S5/3206 , H01S5/3432 , H01S5/34326
摘要： The present invention relates to a laser with accurately defined and controlled oxide regions which provide electrical and optical confinement to the laser. Specifically, the oxide regions are formed by a pre-oxidation layer disordering process which defines the regions within which oxidation can occur. The present invention allows for the manufacture of highly compact lasers with reproducible optical and electrical characteristics.
摘要翻译： 本发明涉及具有精确限定和受控的氧化物区域的激光器，其提供对激光器的电和光限制。 具体地，氧化物区域是通过预氧化层无序化方法形成的，该方法限定可发生氧化的区域。 本发明允许制造具有可再现的光学和电学特性的高度紧凑的激光器。
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公开(公告)号：US06548908B2
公开(公告)日：2003-04-15
申请号：US09473108
申请日：1999-12-27
IPC分类号： H01L2348
CPC分类号： G02B6/136 , G02B6/132 , G02B2006/12102 , G02B2006/12104 , G02B2006/12119 , G02B2006/12121 , G02B2006/12142 , G02B2006/1215 , G02B2006/12176 , H01S5/18313 , H01S5/18338 , H01S5/18388 , H01S5/2215
摘要： A passive semiconductor device structure is made using planar lateral oxidation to define a buried oxidized semiconductor structure such as a passive waveguide, microlens or DBR mirror stack.
摘要翻译： 无源半导体器件结构使用平面侧向氧化来形成掩埋氧化半导体结构，例如无源波导，微透镜或DBR反射镜叠层。
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公开(公告)号：US6121983A
公开(公告)日：2000-09-19
申请号：US196396
申请日：1998-11-19
申请人： David K. Fork , G. A. Neville Connell , Eric Peeters , Robert L. Thornton , Patrick Y. Maeda , Ross D. Bringans , Thomas L. Paoli , Joel A. Kubby , Decai Sun , Philip D. Floyd
发明人： David K. Fork , G. A. Neville Connell , Eric Peeters , Robert L. Thornton , Patrick Y. Maeda , Ross D. Bringans , Thomas L. Paoli , Joel A. Kubby , Decai Sun , Philip D. Floyd
CPC分类号： H04N1/1135 , B41J2/465 , G02B26/0833 , G02B26/10 , H04N1/192 , H01S5/18388 , H01S5/423 , H04N1/195
摘要： A solid state laser array is multiplexed using an array of micromirrors to permit high resolution printing in a wide format. Each laser in the laser array and each micromirror in the mirror array is individually controlled. The laser array may be an array of VCSELs produced on a GaAs substrate.
摘要翻译： 使用微镜阵列来复用固态激光器阵列，以允许以宽格式进行高分辨率打印。 激光阵列中的每个激光器和反射镜阵列中的每个微镜单独控制。 激光器阵列可以是在GaAs衬底上产生的VCSEL阵列。
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6.发明授权Fabrication of scanning III-V compound light emitters integrated with Si-based actuators 有权与Si基致动器集成的扫描III-V复合发光体的制造
公开(公告)号：US6054335A
公开(公告)日：2000-04-25
申请号：US209866
申请日：1998-12-11
申请人： Decai Sun , Ross D. Bringans , Christopher L. Chua , Philip D. Floyd , Eric Peeters , Joel A. Kubby , Alex T. Tran
发明人： Decai Sun , Ross D. Bringans , Christopher L. Chua , Philip D. Floyd , Eric Peeters , Joel A. Kubby , Alex T. Tran
IPC分类号： B81B3/00 , B81B7/02 , H01L27/15 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/026 , H01S5/042 , H01S5/183 , H01S5/42 , H01L21/00
CPC分类号： H01S5/18308 , H01S5/02288 , H01L27/15 , H01S5/021 , H01S5/02252 , H01S5/4087 , H01S5/423 , H01S5/426
摘要： A III-V compound light emitter is integrated with Si-based actuators. The Proposed devices take advantage of the superior optical properties of III-V compounds and the superior mechanical properties of Si, as well as mature fabrication technologies of Si-Micro-Electro-Mechanical Systems (MEMS). The emitter can be a light emitting diode (LED), a vertical cavity surface emitting laser (VCSEL) or an edge emitting laser. Electro or magnetic based actuation from Si-based actuators provides linear or angular movement of the light emitter.
摘要翻译： III-V复合光发射器与Si基致动器集成。 提出的器件利用了III-V化合物的优异光学性能和Si的优异机械性能，以及Si-Micro-Electro-Mechanical Systems（MEMS）的成熟制造技术。 发射极可以是发光二极管（LED），垂直腔表面发射激光器（VCSEL）或边缘发射激光器。 基于Si的致动器的基于电或磁的致动器提供光发射器的线性或角度运动。
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公开(公告)号：US06180428B2
公开(公告)日：2001-01-30
申请号：US09172883
申请日：1998-10-15
申请人： Eric Peeters , Decai Sun , G. A. Neville Connell , Ross D. Bringans , Raj B. Apte , Thomas L. Paoli , Patrick Y. Maeda , David K. Fork , Joel A. Kubby , Philip D. Floyd
发明人： Eric Peeters , Decai Sun , G. A. Neville Connell , Ross D. Bringans , Raj B. Apte , Thomas L. Paoli , Patrick Y. Maeda , David K. Fork , Joel A. Kubby , Philip D. Floyd
IPC分类号： H01L2100
CPC分类号： H01S5/02252 , H01L27/15 , H01S5/183 , H01S5/423
摘要： A micro-machined movable light emitting assembly is formed on or from an undoped or pure III-V substrate or formed on or from a doped III-V substrate. The movable light emitting assemblies are to be actuated using force generators, to generate the various mechanical degrees of freedom depending on the type of stage suspension and actuation.
摘要翻译： 微加工的可移动发光组件形成在未掺杂的或纯的III-V衬底上，或者形成在掺杂的III-V衬底上或从掺杂的III-V衬底上形成。 使用力发生器来致动可移动发光组件，以根据舞台悬架和致动的类型产生各种机械自由度。
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8.发明授权公开(公告)号：US07195939B2
公开(公告)日：2007-03-27
申请号：US10281421
申请日：2002-10-25
IPC分类号： H01L21/00
CPC分类号： H01S5/0261 , H01S5/18313 , H01S5/1833 , H01S5/18388
摘要： Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices.
摘要翻译： 光电子集成电路中的半导体器件通过使用平面横向氧化来彼此电绝缘以氧化垂直分离半导体器件的掩埋半导体层。
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公开(公告)号：USRE39261E1
公开(公告)日：2006-09-05
申请号：US10014563
申请日：2001-12-14
申请人： Philip D. Floyd , Decai Sun , Joel A. Kubby
发明人： Philip D. Floyd , Decai Sun , Joel A. Kubby
IPC分类号： G02B26/08
CPC分类号： G02B26/10 , G02B26/0833 , G02B26/0841 , G02B26/085
摘要： A solid state laser beam scanning system having a single crystal silicon deflection and scanning mirror integrated with a laser diode. By combining the techniques of deep reactive ion etching of silicon with solder bump bonding techniques, completed and tested laser diodes are integrated with silicon substrates supporting micro-electro-mechanical systems layers.
摘要翻译： 具有与激光二极管集成的单晶硅偏转和扫描反射镜的固态激光束扫描系统。 通过将硅的深反应离子蚀刻技术与焊料凸块接合技术相结合，完成和测试的激光二极管与支持微电子机械系统层的硅衬底集成。
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10.再颁专利Method and apparatus for an integrated laser beam scanner using a carrier substrate 有权使用载体衬底的集成激光束扫描器的方法和装置公开(公告)号：USRE38437E1
公开(公告)日：2004-02-24
申请号：US10022917
申请日：2001-12-20
申请人： Philip D. Floyd , Decai Sun , Joel A. Kubby
发明人： Philip D. Floyd , Decai Sun , Joel A. Kubby
IPC分类号： G02B2608
CPC分类号： G02B26/085 , G02B26/0833 , G02B26/0841 , G02B26/105 , G06K7/10653 , H01L2224/16225
摘要： An solid state scanning system having a single crystal silicon deflection mirror and scanning mirror is integrated with a light source. Separation of the micro-electro-mechanical systems and light emitters on separate substrates allows the use of flip-chip and solder bump bonding techniques for mounting of the light sources. The separate substrates are subsequently full wafer bonded together to create an integrated solid state scanning system.
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