公开(公告)号：US20070037681A9

公开(公告)日：2007-02-15

申请号：US11085692

申请日：2005-03-21

申请人： Atsuo Watanabe

发明人： Atsuo Watanabe

IPC分类号： B25F5/02 ,  F16C13/00

CPC分类号： C23C4/10 ,  C23C4/00 ,  Y10T29/49563

摘要： A paper machine press roll comprises a core roll and a ceramics sprayed film formed on an outer periphery of the core roll, in which values of Rk and Vo which are characteristic evaluation parameters of a plateau-structure surface of the ceramics sprayed film are Rk≦8.0 μm and Vo≧0.030 mm3/cm2. (Vo=(100−Mr2)×Rvk/2000 (mm3/cm2) where Rk, Mr2 and Rvk are a core level difference, a core load length ratio and a projecting valley depth, respectively which are defined in JIS B0671-2-2002 (ISO13565-2-1996).

摘要翻译： 造纸机压辊包括芯辊和形成在芯辊的外周上的陶瓷喷涂膜，其中作为陶瓷喷涂膜的平台结构表面的特征评估参数的Rk和Vo值为< in-line-formula description =“In-line Formulas”end =“lead”？> Rk <= 8.0 mum和<？in-line-formula description =“In-line formula”end =“tail”？> <？ in-line-formula description =“In-line Formulas”end =“lead”？> Vo> = 0.030 mm 3/2 / cm 2。 （Ω=（100-Mr2）×Rvk / 2000（mm 3 / cm 2） / SUP>），其中Rk，Mr2和Rvk分别是JIS B0671-2-2002（ISO13565-2-1996）中定义的核心级别差，核心负载长度比和突出谷深度。

公开(公告)号：US07097741B2

公开(公告)日：2006-08-29

申请号：US10473386

申请日：2002-04-08

申请人： Atsuo Watanabe ,  Takahisa Hikida ,  Atsushi Watanabe

发明人： Atsuo Watanabe ,  Takahisa Hikida ,  Atsushi Watanabe

IPC分类号： D21F3/02 ,  B32B27/04 ,  B32B27/12 ,  B30B5/04

CPC分类号： D21F3/086 ,  D21F3/0227 ,  Y10S162/901 ,  Y10T428/2457 ,  Y10T428/269 ,  Y10T442/2049

摘要： A shoe press belt capable of preventing the occurrence and growth of cracks therein and is used in a paper-making press apparatus containing a press roll, a belt, and a pressure shoe for pressing a material web, wherein the shoe press belt includes a reinforcing layer, a first elastic material layer, and a second elastic material layer. A plurality of grooves are formed at an exterior peripheral surface region of the first elastic material layer. The bottom of the grooves at an axial end region of the belt corresponding to at least one of an end-proximate region in an axial direction of the pressure shoe and an end-proximate region in an axial direction of the press roll extends toward the reinforcing layer relative to the bottom of the grooves at a region other than the end region.

摘要翻译： 一种能够防止裂纹发生和生长的靴形压榨带，用于包含用于挤压材料幅材的压榨辊，带和压力靴的造纸压榨装置中，其中靴形压榨带包括增强 层，第一弹性材料层和第二弹性材料层。 在第一弹性材料层的外周面区域形成有多个槽。 皮带的轴向端部区域中的凹槽的底部对应于压靴的轴向方向上的端部近端区域和压辊轴向方向上的端部近端区域中的至少一个，朝向加强件 相对于在端部区域以外的区域的凹槽的底部。

公开(公告)号：US20060162163A1

公开(公告)日：2006-07-27

申请号：US10563343

申请日：2004-06-16

申请人： Atsuo Watanabe ,  Kenjiro Nakayama ,  Tetsuya Murakami

发明人： Atsuo Watanabe ,  Kenjiro Nakayama ,  Tetsuya Murakami

IPC分类号： B21D53/00

CPC分类号： F16C13/00 ,  B29C53/8066 ,  B29C63/14 ,  B29C70/32 ,  D21G1/02 ,  Y10T29/49549 ,  Y10T29/49551 ,  Y10T29/49558

摘要： A resin roll (1) comprises a lower winding layer (3) comprising a fiber-reinforced resin formed on an outer periphery of a roll core (2), and an outer sleeve (5) comprising a synthetic resin formed on the outside through an adhesive layer (4). A non-woven fiber aggregate layer (8) which constitutes an outer periphery of the lower winding layer (3) is formed such that a tape-shaped non-woven fiber aggregate in which a fiber material mainly comprising inorganic fibers is coupled with a binder is sequentially transferred and the non-woven fiber aggregate is impregnated with a liquid thermosetting resin and wound around the outer periphery of the roll core (2).

摘要翻译： 树脂辊（1）包括下卷绕层（3），所述下卷绕层（3）包括形成在卷芯（2）的外周上的纤维增强树脂和外套筒（5），所述外套筒（5）包括合成树脂，所述外套筒 粘合剂层（4）。 构成下部卷绕层（3）的外周的无纺纤维聚集体层（8）形成为使得主要包含无机纤维的纤维材料与粘合剂结合的带状无纺纤维聚集体 依次转印，无纺纤维聚集体浸渍有液态热固性树脂，并卷绕在卷芯（2）的外周。

公开(公告)号：US20050269887A1

公开(公告)日：2005-12-08

申请号：US10860931

申请日：2004-06-04

申请人： David Blanding ,  Atsuo Watanabe

发明人： David Blanding ,  Atsuo Watanabe

IPC分类号： B64C13/00 ,  B64C13/24 ,  F16H25/20 ,  F16H27/02 ,  H02K7/06 ,  H02K16/00 ,  H02K19/38 ,  H02K41/00

CPC分类号： H02K7/06 ,  B64C13/00 ,  B64C13/24 ,  F16H25/2015 ,  F16H25/2025 ,  F16H25/2266 ,  F16H2025/2071 ,  F16H2025/2078 ,  H02K16/00 ,  Y02T50/44 ,  Y10T74/186 ,  Y10T74/18664 ,  Y10T74/19767

摘要： An electrical actuator comprises two or more electrical motors to drive a threaded screw ram. Each motor has an armature that drives a threaded roller screw that is engaged to the threaded screw ram. Each armature of each motor is independently engageable and/or dis-engageable with the ram. The motor armatures are engageable and disengageable by way of threaded roller screws, the ends of which are tapered to enable them to be lifted away from or lowered into engagement with the threaded ram.

摘要翻译： 电致动器包括两个或更多个电动机以驱动螺纹螺母。 每个电机都有一个电枢，用于驱动一个螺纹滚子丝杠，该螺丝与螺纹螺母接合。 每个电动机的每个电枢可独立地与压头接合和/或不可接合。 电动机电枢通过螺纹滚子螺钉可接合和分离，螺纹滚子螺钉的端部是锥形的，使得它们能够被提升离开或降低与螺纹压头接合。

公开(公告)号：US20050258454A1

公开(公告)日：2005-11-24

申请号：US11135661

申请日：2005-05-24

申请人： Rajesh Kumar ,  Tsuyoshi Yamamoto ,  Hiroki Nakamura ,  Toshiyuki Morishita ,  Takasumi Ohyanagi ,  Atsuo Watanabe

发明人： Rajesh Kumar ,  Tsuyoshi Yamamoto ,  Hiroki Nakamura ,  Toshiyuki Morishita ,  Takasumi Ohyanagi ,  Atsuo Watanabe

IPC分类号： H01L21/04 ,  H01L21/336 ,  H01L27/098 ,  H01L27/10 ,  H01L29/06 ,  H01L29/24 ,  H01L29/78 ,  H01L29/808

CPC分类号： H01L29/1608 ,  H01L27/098 ,  H01L29/0619 ,  H01L29/66068 ,  H01L29/8083

摘要： A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.

摘要翻译： 碳化硅半导体器件的制造方法包括以下步骤：制备包括碳化硅衬底，漂移层和第一半导体层的半导体衬底; 在单元部分中形成多个第一沟槽; 通过外延生长法在每个第一沟槽的内壁上形成栅极层; 在所述半导体衬底的表面上形成第一绝缘膜; 在所述第一绝缘膜上形成用于电连接到所述栅极层的栅电极; 在所述第一绝缘膜上形成用于连接到所述单元部分中的所述第一半导体层的源电极; 以及电连接到所述碳化硅衬底的漏电极。

公开(公告)号：US06917054B2

公开(公告)日：2005-07-12

申请号：US10681126

申请日：2003-10-09

申请人： Hidekatsu Onose ,  Hideo Homma ,  Atsuo Watanabe

发明人： Hidekatsu Onose ,  Hideo Homma ,  Atsuo Watanabe

IPC分类号： H01L29/80 ,  H01L21/337 ,  H01L29/10 ,  H01L29/772 ,  H01L29/808 ,  H01L31/0312 ,  H01L29/72

CPC分类号： H01L29/1066 ,  H01L29/1608 ,  H01L29/7722

摘要： A semiconductor device includes a trench formed on a source side of a drift region, a p-type gate region and a gate formed at the bottom of the trench, and the source formed over the entire surface of the unit device through an insulating film. The narrowest portion of a channel of the device is deeper than one-half the junction depth of the p-type gate region. This allows the width of the channel on the drain side to be reduced even when a lower energy ion implantation manufacturing process is used.

摘要翻译： 半导体器件包括形成在漂移区的源极侧的沟槽，形成在沟槽底部的p型栅极区域和栅极，并且源极通过绝缘膜形成在单元器件的整个表面上。 器件通道的最窄部分比p型栅极区域的结深的一半深。 这允许即使在使用较低能量的离子注入制造工艺时，漏极侧的沟道的宽度也被减小。

公开(公告)号：US06894346B2

公开(公告)日：2005-05-17

申请号：US10640411

申请日：2003-08-13

申请人： Hidekatsu Onose ,  Atsuo Watanabe

发明人： Hidekatsu Onose ,  Atsuo Watanabe

IPC分类号： H01L29/808 ,  H01L21/337 ,  H01L29/10 ,  H01L29/74 ,  H01L29/76 ,  H01L29/772 ,  H01L29/80 ,  H01L31/0256 ,  H01L30/0256

CPC分类号： H01L29/1066 ,  H01L29/7722 ,  H01L29/808

摘要： A structure is provided that ensures a low on-resistance and a better blocking effect. In a lateral type SIT (Static Induction Transistor) in which a first region is used as a p+ gate and a gate electrode is formed on the bottom of the first region, the structure is built such that the p+ gate and an n+ source are contiguous. An insulating film is formed on the surface of an n− channel, and an auxiliary gate electrode is formed on the insulating film. In addition, the auxiliary gate electrode and the source electrode are shorted.

摘要翻译： 提供了一种确保低导通电阻和更好的阻塞效果的结构。 在其中第一区被用作栅极的横向型SIT（静态感应晶体管）中，并且栅极电极形成在第一区域的底部上，构造为使得p ^{+ 门和n + 源是连续的。 在n通道的表面上形成绝缘膜，在绝缘膜上形成辅助栅电极。 此外，辅助栅电极和源电极短路。}

公开(公告)号：US06640642B1

公开(公告)日：2003-11-04

申请号：US09653808

申请日：2000-09-01

申请人： Yasuo Onose ,  Atsuo Watanabe ,  Seiji Kuryu ,  Shinya Satou ,  Junichi Horie ,  Satoshi Shimada

发明人： Yasuo Onose ,  Atsuo Watanabe ,  Seiji Kuryu ,  Shinya Satou ,  Junichi Horie ,  Satoshi Shimada

IPC分类号： G01L912

CPC分类号： G01L9/0042 ,  G01L1/146 ,  G01L9/0073

摘要： A pressure sensor of electric capacitance type which includes a plurality of pressure sensor units connected in parallel with one another and each formed on a substrate by an electrode, a cavity region and a diaphragm having an electrically conductive film which is disposed in opposition to the electrode with the cavity region intervening between the electrode and the diaphragm, wherein diaphragm fixing portions are disposed internally of the cavity region so that a single sheet of the diaphragm is partitionarily and regionally allotted to regions of the plural pressure sensor units, respectively. With this structure of the capacitance-type pressure sensor, ineffective region for capacitance detection is minimized and hence the parasitic capacitance can be reduced with the detection accuracy of the sensor being improved.

摘要翻译： 一种电容式压力传感器，其包括彼此并联连接的多个压力传感器单元，每个压力传感器单元通过电极形成在基板上，空腔区域和具有导电膜的隔膜，所述导电膜设置成与电极相对设置 其中腔区插入在电极和隔膜之间，其中隔膜固定部分设置在空腔区域的内部，使得隔膜的单片分别地分区地分配到多个压力传感器单元的区域。 利用电容型压力传感器的这种结构，电容检测的无效区域被最小化，因此可以随着传感器的检测精度提高而降低寄生电容。

公开(公告)号：US06603807B1

公开(公告)日：2003-08-05

申请号：US09259058

申请日：1999-02-26

申请人： Seigoh Yukutake ,  Yasuyuki Kojima ,  Minehiro Nemoto ,  Masatsugu Amishiro ,  Takayuki Iwasaki ,  Shinichiro Mitani ,  Katsuhiro Furukawa ,  Chiyoshi Kamada ,  Atsuo Watanabe ,  Takayuki Oouchi ,  Nobuyasu Kanekawa

发明人： Seigoh Yukutake ,  Yasuyuki Kojima ,  Minehiro Nemoto ,  Masatsugu Amishiro ,  Takayuki Iwasaki ,  Shinichiro Mitani ,  Katsuhiro Furukawa ,  Chiyoshi Kamada ,  Atsuo Watanabe ,  Takayuki Oouchi ,  Nobuyasu Kanekawa

IPC分类号： H01L2900

CPC分类号： H04L25/0266 ,  H01L2924/0002 ,  H04L25/0268 ,  H04L25/0272 ,  H04L25/028 ,  H04L25/0292 ,  H04L27/0002 ,  H04M11/06 ,  H01L2924/00

摘要： An isolator is made monolithic by forming a capacitive insulating barrier using an interlayer insulation film on the semiconductor substrate to miniaturize the modem device by the monolithic isolator.

摘要翻译： 隔离器通过在半导体衬底上形成使用层间绝缘膜的电容绝缘屏障来制成单片，以通过单片隔离器使调制解调器装置小型化。

公开(公告)号：US06563200B2

公开(公告)日：2003-05-13

申请号：US09940790

申请日：2001-08-29

申请人： Mutsumi Kikuchi ,  Fumio Murabayashi ,  Takashi Sase ,  Atsuo Watanabe ,  Masatsugu Amishiro

发明人： Mutsumi Kikuchi ,  Fumio Murabayashi ,  Takashi Sase ,  Atsuo Watanabe ,  Masatsugu Amishiro

IPC分类号： H01L23495

CPC分类号： H01L27/1203 ,  H01L23/50 ,  H01L2224/48227 ,  H01L2224/48257 ,  H01L2224/49112 ,  H01L2224/49171 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/00

摘要： In an interface device in which by means of a buried insulation film 412 and a region insulation portion 410 an SOI substrate 414 is divided into a semiconductor support substrate region 411, a controller side region 407 and a network side region 408 and a part of isolator circuits 405 and 406 making use of a static capacitance are formed in the network side region 408, the semiconductor support substrate region 411 and the network side region 408 are connected to a network power source to always keep these regions at a same potential, thereby, an interface device using a dielectric isolation substrate which suppresses erroneous operations due to noises and characteristic deterioration, and a system using the same are provided.