Interconnect structures with patternable low-k dielectrics and method of fabricating same
    72.
    发明授权
    Interconnect structures with patternable low-k dielectrics and method of fabricating same 有权
    具有可编程低k电介质的互连结构及其制造方法

    公开(公告)号:US08450854B2

    公开(公告)日:2013-05-28

    申请号:US12841359

    申请日:2010-07-22

    IPC分类号: H01L23/522 H01L21/768

    摘要: The present invention provides an interconnect structure in which a patternable low-k material is employed as an interconnect dielectric material. Specifically, this invention relates to single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric. In general terms, the interconnect structure includes at least one patterned and cured low-k dielectric material located on a surface of a substrate. The at least one cured and patterned low-k material has conductively filled regions embedded therein and typically, but not always, includes Si atoms bonded to cyclic rings via oxygen atoms. The present invention also provides a method of forming such interconnect structures in which no separate photoresist is employed in patterning the patterned low-k material.

    摘要翻译: 本发明提供一种互连结构,其中使用可图案化的低k材料作为互连电介质材料。 具体而言,本发明涉及具有至少一个可构图的低k电介质的单镶嵌和双镶嵌低k互连结构。 一般来说,互连结构包括位于衬底表面上的至少一个图案化和固化的低k电介质材料。 所述至少一种固化和图案化的低k材料具有嵌入其中的导电填充区域,并且通常但不总是包括通过氧原子键合到环上的Si原子。 本发明还提供一种形成这种互连结构的方法,其中在图案化的低k材料图案中不使用单独的光致抗蚀剂。

    Interconnect structures with patternable low-k dielectrics and method of fabricating same
    74.
    发明授权
    Interconnect structures with patternable low-k dielectrics and method of fabricating same 有权
    具有可编程低k电介质的互连结构及其制造方法

    公开(公告)号:US08084862B2

    公开(公告)日:2011-12-27

    申请号:US11858624

    申请日:2007-09-20

    IPC分类号: H01L23/52

    摘要: The present invention provides an interconnect structure in which a patternable low-k material is employed as an interconnect dielectric material. Specifically, this invention relates to single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric. In general terms, the interconnect structure includes at least one patterned and cured low-k dielectric material located on a surface of a substrate. The at least one cured and patterned low-k material has conductively filled regions embedded therein and typically, but not always, includes Si atoms bonded to cyclic rings via oxygen atoms. The present invention also provides a method of forming such interconnect structures in which no separate photoresist is employed in patterning the patterned low-k material.

    摘要翻译: 本发明提供一种互连结构,其中使用可图案化的低k材料作为互连电介质材料。 具体而言,本发明涉及具有至少一个可构图的低k电介质的单镶嵌和双镶嵌低k互连结构。 一般来说,互连结构包括位于衬底表面上的至少一个图案化和固化的低k电介质材料。 所述至少一种固化和图案化的低k材料具有嵌入其中的导电填充区域,并且通常但不总是包括通过氧原子键合到环上的Si原子。 本发明还提供一种形成这种互连结构的方法,其中在图案化的低k材料图案中不使用单独的光致抗蚀剂。

    Photopatternable dielectric materials for BEOL applications and methods for use
    75.
    发明授权
    Photopatternable dielectric materials for BEOL applications and methods for use 有权
    用于BEOL应用的光图案介电材料和使用方法

    公开(公告)号:US08029971B2

    公开(公告)日:2011-10-04

    申请号:US12047435

    申请日:2008-03-13

    摘要: Compositions, a method, and a photopatternable blend. The compositions include a blend of a first and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a substituted silsesquioxane polymer. The second polymer is configured to undergo chemical crosslinking with the first polymer, the second polymer, or a combination thereof, upon exposure to light, thermal energy, or a combination thereof. The compositions include a photosensitive acid generator. The method includes forming a film. The film is patternwise imaged, and at least one region is exposed to radiation. After the imaging, the film is baked, wherein at least one exposed region is rendered substantially soluble. After the baking, the film is developed, wherein a relief pattern remains. The relief pattern is exposed to radiation. The relief pattern is baked. The relief pattern is cured. A chemically amplified positive-tone photopatternable blend is also described.

    摘要翻译: 组合,一种方法和一种光图案化混合物。 组合物包括第一和第二聚合物的共混物。 第一聚合物是取代的倍半硅氧烷共聚物。 第二聚合物是取代的倍半硅氧烷聚合物。 第二聚合物被配置为在暴露于光,热能或其组合时与第一聚合物,第二聚合物或其组合进行化学交联。 组合物包括光敏酸产生剂。 该方法包括形成膜。 膜被图案化成像,并且至少一个区域暴露于辐射。 在成像之后,烘烤该膜,其中至少一个曝光区域呈现基本上可溶的。 烘烤后,显影膜,其中保留有浮雕图案。 浮雕图案暴露于辐射。 浮雕图案被烘烤。 浮雕图案被修复。 还描述了化学放大的正色调可光图案化混合物。

    Mechanically robust metal/low-κ interconnects
    76.
    发明授权
    Mechanically robust metal/low-κ interconnects 有权
    机械坚固的金属/低压 互连

    公开(公告)号:US08017522B2

    公开(公告)日:2011-09-13

    申请号:US11626550

    申请日:2007-01-24

    IPC分类号: H01L21/44 H01L21/311

    摘要: A mechanically robust semiconductor structure with improved adhesion strength between a low-k dielectric layer and a dielectric-containing substrate is provided. In particular, the present invention provides a structure that includes a dielectric-containing substrate having an upper region including a treated surface layer which is chemically and physically different from the substrate; and a low-k dielectric material located on a the treated surface layer of the substrate. The treated surface layer and the low-k dielectric material form an interface that has an adhesion strength that is greater than 60% of the cohesive strength of the weaker material on either side of the interface. The treated surface is formed by treating the surface of the substrate with at least one of actinic radiation, a plasma and e-beam radiation prior to forming of the substrate the low-k dielectric material.

    摘要翻译: 提供了具有改善的低k电介质层和含电介质衬底之间的粘附强度的机械稳固的半导体结构。 特别地,本发明提供了一种结构,其包括含电介质的衬底,其具有包括化学和物理上不同于衬底的经处理的表面层的上部区域; 以及位于所述基板的经处理的表面层上的低k电介质材料。 经处理的表面层和低k电介质材料形成界面,该界面的粘合强度大于界面两侧的较弱材料的内聚强度的60%。 经处理的表面通过在形成低k电介质材料之前用光化辐射,等离子体和电子束辐射中的至少一种来处理衬底的表面而形成。

    INTERCONNECT STRUCTURE INCLUDING A MODIFIED PHOTORESIST AS A PERMANENT INTERCONNECT DIELECTRIC AND METHOD OF FABRICATING SAME
    77.
    发明申请
    INTERCONNECT STRUCTURE INCLUDING A MODIFIED PHOTORESIST AS A PERMANENT INTERCONNECT DIELECTRIC AND METHOD OF FABRICATING SAME 有权
    包括作为永久互连电介质的改性光电子体的互连结构及其制造方法

    公开(公告)号:US20110115090A1

    公开(公告)日:2011-05-19

    申请号:US12622111

    申请日:2009-11-19

    申请人: Qinghuang Lin

    发明人: Qinghuang Lin

    IPC分类号: H01L21/768 H01L23/48

    摘要: A photoresist conversion that changes a patterned photoresist into a permanent patterned interconnect dielectric is described. The photoresist conversion process includes adding a dielectric enabling element into a patterned photoresist. The dielectric enabling element-containing photoresist is converted into a permanent patterned dielectric material by performing a curing step. In one embodiment, a method is described that includes providing at least one photoresist to an upper surface of a substrate. At least one interconnect pattern is formed into the at least one photoresist. A dielectric enabling element is added to the patterned photoresist and thereafter the patterned photoresist including the dielectric enabling element is cured into a cured permanent patterned dielectric material. The cured permanent patterned dielectric material includes the dielectric enabling therein.

    摘要翻译: 描述了将图案化的光致抗蚀剂改变成永久性图案化互连电介质的光致抗蚀剂转换。 光致抗蚀剂转换工艺包括将电介质使能元件添加到图案化光致抗蚀剂中。 通过进行固化步骤将含电介质使能元素的光致抗蚀剂转变成永久图案化的电介质材料。 在一个实施例中,描述了一种方法,其包括向衬底的上表面提供至少一种光致抗蚀剂。 至少一个互连图案形成至少一个光致抗蚀剂。 将电介质使能元件添加到图案化的光致抗蚀剂中,此后包括电介质使能元件的图案化光致抗蚀剂固化成固化的永久性图案化电介质材料。 固化的永久性图案化电介质材料包括其中的电介质。