公开(公告)号：US4377772A

公开(公告)日：1983-03-22

申请号：US201914

申请日：1980-10-29

申请人： Michihiro Tsuchihashi ,  Ryo Suzuki ,  Keiji Watanabe ,  Masato Saito

发明人： Michihiro Tsuchihashi ,  Ryo Suzuki ,  Keiji Watanabe ,  Masato Saito

IPC分类号： H01J61/54 ,  H01J61/92 ,  H01J7/44

CPC分类号： H01J61/92 ,  H01J61/541

摘要： A discharge lamp comprises an arc tube for high pressure discharge and a discharge gap for discharging until restarting the arc tube. The discharge gap being electrically connected in parallel to the arc tube in an outer bulb. A normally opened temperature responsive switch means is connected in series to the discharge gap and a series of the discharge gap and the temperature responsive switch means is connected in parallel to the arc tube.

摘要翻译： 放电灯包括用于高压放电的电弧管和用于放电的放电间隙，直到重新启动电弧管。 放电间隙与外灯泡中的电弧管并联电连接。 常开的温度响应开关装置与放电间隙串联连接，并且一系列放电间隙和温度响应开关装置与电弧管并联连接。

公开(公告)号：US4305137A

公开(公告)日：1981-12-08

申请号：US35254

申请日：1979-05-02

申请人： Minoru Hiroshima ,  Ryo Suzuki

发明人： Minoru Hiroshima ,  Ryo Suzuki

IPC分类号： G11C11/14 ,  G11C19/08 ,  H01F10/06

CPC分类号： H01F10/06 ,  G11C19/0883

摘要： The basic elements of a magnetic bubble device are laminated. A spacer conductor pattern layer is formed on the same plane as a control conductor pattern layer interposed between a magnetic film which forms and holds magnetic bubbles and a propagation circuit pattern layer adapted to control the magnetic bubbles so as to make substantially uniform the distance between the propagation path and the magnetic film.

摘要翻译： 磁性气泡装置的基本元件被层压。 间隔导体图案层形成在与形成并保持磁性气泡的磁性膜之间的控制导体图案层的同一平面上，以及适于控制磁性气泡的传播电路图案层，以使得基本均匀的距离 传播路径和磁性膜。

公开(公告)号：US09989006B2

公开(公告)日：2018-06-05

申请号：US14383240

申请日：2013-03-05

申请人： Ryo Suzuki ,  Takeshi Miyaura ,  Yoshiyasu Ito ,  Toyomori Tsuiki ,  Naoyuki Yamada

发明人： Ryo Suzuki ,  Takeshi Miyaura ,  Yoshiyasu Ito ,  Toyomori Tsuiki ,  Naoyuki Yamada

IPC分类号： F02D41/24 ,  F02D41/40 ,  F02D41/36

CPC分类号： F02D41/36 ,  F02D41/2467 ,  F02D41/40 ,  F02D2200/0602 ,  Y02T10/44

摘要： An electronic control unit detects a manner of fluctuation of a fuel pressure with injection of fuel by a fuel injection valve with the use of a fuel pressure sensor, and calculates a tendency of deviation of an actual fuel injection characteristic of the fuel injection valve with respect to a basic fuel injection characteristic on the basis of a result of comparison between a detected temporal waveform and a basic temporal waveform. The tendency of deviation is reflected at a predetermined reflection rate (R) at the time of updating a learned value (Gij) for compensating for an individual difference of the fuel injection valve. The predetermined reflection rate (R) is increased when an accumulated value (D) of a vehicle travel distance is shorter than a predetermined value (Dth) as compared with when the accumulated value (D) is longer than or equal to the predetermined value (Dth).

公开(公告)号：US08659022B2

公开(公告)日：2014-02-25

申请号：US13498992

申请日：2010-10-28

申请人： Ryo Suzuki ,  Hiroshi Takamura

发明人： Ryo Suzuki ,  Hiroshi Takamura

IPC分类号： H01L29/04

CPC分类号： C30B29/06 ,  C30B29/605 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02598 ,  H01L21/02667

摘要： A hybrid silicon wafer which is a silicon wafer having a structure wherein monocrystalline silicon is embedded in polycrystalline silicon that is prepared by the unidirectional solidification/melting method. The longitudinal plane of crystal grains of the polycrystalline portion prepared by the unidirectional solidification/melting method is used as the wafer plane, and the monocrystalline silicon is embedded so that the longitudinal direction of the crystal grains of the polycrystalline portion forms an angle of 120° to 150° relative to the cleaved surface of the monocrystalline silicon. Thus provided is a hybrid silicon wafer comprising the functions of both a polycrystalline silicon wafer and a monocrystalline wafer.

摘要翻译： 作为硅晶片的混合硅晶片，其具有通过单向凝固/熔融法制备的单晶硅嵌入到多晶硅中的结构。 使用通过单向凝固/熔融法制备的多晶部分的晶粒的纵向平面用作晶片平面，并且嵌入单晶硅，使得多晶部分的晶粒的纵向方向形成120°的角度 至150°相对于单晶硅的切割表面。 因此提供了包括多晶硅晶片和单晶晶片的功能的混合硅晶片。

公开(公告)号：US08647747B2

公开(公告)日：2014-02-11

申请号：US12832150

申请日：2010-07-08

申请人： Hiroshi Takamura ,  Ryo Suzuki

发明人： Hiroshi Takamura ,  Ryo Suzuki

IPC分类号： B32B3/02 ,  B32B9/04 ,  B32B13/04 ,  C01B33/02 ,  B29D7/00

CPC分类号： C30B33/06 ,  C01B32/05 ,  C30B11/00 ,  C30B29/06 ,  Y10T428/21

摘要： Provided is a hybrid silicon wafer in which molten state polycrystalline silicon and solid state single-crystal silicon are mutually integrated, comprising fine crystals having an average crystal grain size of 8 mm or less at a polycrystalline portion within 10 mm from a boundary with a single-crystal portion. Additionally provided is a method of manufacturing a hybrid silicon wafer, wherein a columnar single-crystal silicon ingot is sent in a mold in advance, molten silicon is cast around and integrated with the single-crystal ingot to prepare an ingot complex of single-crystal silicon and polycrystalline silicon, and a wafer shape is cut out therefrom. The provided hybrid silicon wafer comprises the functions of both a polycrystalline silicon wafer and a single-crystal wafer.

摘要翻译： 提供了一种混合硅晶片，其中熔融状态的多晶硅和固态单晶硅相互整合，包括在与单个边界的边界10mm以内的多晶部分处具有8mm或更小的平均晶粒尺寸的细晶体 晶体部分。 另外提供了一种制造混合硅晶片的方法，其中预先在模具中输送柱状单晶硅锭，将熔融硅铸造并与单晶锭一体化以制备单晶锭锭 硅和多晶硅，并从其中切出晶片形状。 所提供的混合硅晶片包括多晶硅晶片和单晶晶片的功能。

公开(公告)号：US08642165B2

公开(公告)日：2014-02-04

申请号：US12527267

申请日：2008-03-27

申请人： Ryo Suzuki ,  Hiroaki Mochizuki ,  Tatsuhiko Obayashi

发明人： Ryo Suzuki ,  Hiroaki Mochizuki ,  Tatsuhiko Obayashi

IPC分类号： B32B5/16 ,  B32B27/32 ,  C08G75/04 ,  C08K3/22 ,  G02B1/02

CPC分类号： C08K3/01 ,  Y10T428/256 ,  C08L43/02

摘要： An organic-inorganic hybrid composition comprising a thermoplastic resin and inorganic fine particles, wherein the thermoplastic resin is a resin comprising a repeat unit in which a structure unit represented by the following formula (1) is contained in the main chain of the repeat unit: wherein R represents an alkyl group, an aryl group, an alkoxy group, an aryloxy group or hydroxyl group; and A0 represents oxygen atom, sulfur atom or selenium atom.

摘要翻译： 一种包含热塑性树脂和无机细颗粒的有机 - 无机混合组合物，其中热塑性树脂是包含重复单元的树脂，其中由下式（1）表示的结构单元包含在重复单元的主链中： 其中R表示烷基，芳基，烷氧基，芳氧基或羟基; A0表示氧原子，硫原子或硒原子。

公开(公告)号：US20130341622A1

公开(公告)日：2013-12-26

申请号：US14003388

申请日：2012-03-08

申请人： Hiroshi Takamura ,  Ryo Suzuki

发明人： Hiroshi Takamura ,  Ryo Suzuki

IPC分类号： H01L29/04

CPC分类号： H01L29/04 ,  C01B33/037 ,  C30B11/00 ,  C30B28/06 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02433 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： Provided is a polycrystalline silicon wafer produced by a melting and unidirectional solidification method, where the polycrystalline silicon wafer has a diameter of 450 mm or more, a thickness of 900 μm or more, and an average crystal grain size of 5 to 50 mm, and is made up of one piece. The present invention provides a large-sized polycrystalline silicon wafer having a wafer size of 450 mm or more, of which: mechanical properties are similar to those of monocrystalline silicon wafers; the crystal size is large; the surface roughness is low; the surface has a high cleanliness; the polished surface has less unevenness by having a definite crystal orientation; and the sag value is similar to that of monocrystalline silicon wafers.

摘要翻译： 提供了一种通过熔融和单向凝固方法制造的多晶硅晶片，其中多晶硅晶片的直径为450mm以上，厚度为900μm以上，平均晶粒尺寸为5〜50mm， 由一件组成。 本发明提供了具有450mm以上的晶片尺寸的大尺寸多晶硅晶片，其中：机械性能类似于单晶硅晶片; 晶体尺寸大; 表面粗糙度低; 表面清洁度高; 通过具有确定的晶体取向，抛光表面具有较小的不均匀性; 并且下垂值与单晶硅晶片相似。

公开(公告)号：US08478180B2

公开(公告)日：2013-07-02

申请号：US12956522

申请日：2010-11-30

申请人： Kota Arimoto ,  Ryo Suzuki

发明人： Kota Arimoto ,  Ryo Suzuki

IPC分类号： G03G15/20 ,  H05B11/00

CPC分类号： G03G15/2053 ,  G03G15/2039 ,  G03G2215/2035

摘要： An image heating apparatus includes a belt including a heat generating layer for generating heat by energization and including a power receiving portion which has electroconductivity and is electrically connected to the heat generating layer; a stationary back-up member, provided inside the belt, for sliding on an inner peripheral surface of the belt; a pressing member for pressing the belt against the back-up member to form a nip in which a recording material is to be nip-conveyed between the belt and itself; and an electroconductive portion, provided on the back-up member, for supplying electric power to the power receiving portion by being electrically connected to the power receiving portion.

摘要翻译： 图像加热装置包括：带，其包括通过通电而产生热的发热层，并且包括具有导电性并与发热层电连接的受电部; 固定的支撑构件，设置在所述带内部，用于在所述带的内周面上滑动; 压紧构件，用于将带压靠在支撑构件上，以形成记录材料在带和本身之间被夹持传送的辊隙; 以及设置在所述支撑构件上的导电部分，用于通过电连接到所述受电部分来向所述受电部分提供电力。

公开(公告)号：US08450764B2

公开(公告)日：2013-05-28

申请号：US12615479

申请日：2009-11-10

申请人： Ryo Suzuki ,  Tadao Hayashi

发明人： Ryo Suzuki ,  Tadao Hayashi

IPC分类号： H01L33/00

CPC分类号： H01L33/36 ,  H01L24/80 ,  H01L33/20 ,  H01L33/38 ,  H01L2924/01012 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2924/351 ,  H01L2924/00

摘要： A light-emitting apparatus has a light-emitting device and a supporting board. The light-emitting device has a pair of n-electrodes with a p-electrode therebetween, on the same plane. The supporting board includes an insulating substrate on which positive and negative electrodes are formed, opposing to the p- and n-electrodes of the light-emitting device, respectively. Bonding members bond the p- and n-electrodes with the positive and negative electrodes, respectively. The positive electrode on the supporting board is formed within the width region of the p-electrode and narrower in width than the width of the p-electrode, in a cross-section along a line extending through the pair of n-electrodes. The negative electrodes oppose to the n-electrodes, respectively, with the same widths, or with that side face of each of the negative electrodes which faces the positive electrode being retracted outwardly from that side face of each of the n-electrodes which faces the p-electrode.

摘要翻译： 发光装置具有发光装置和支撑基板。 发光装置在同一平面上具有一对具有p电极的n电极。 支撑板包括分别与发光器件的p电极和n电极相对形成有正极和负极的绝缘基板。 接合部件分别将p电极和n电极与正电极和负电极接合。 沿着延伸穿过该对n电极的线的横截面，支撑板上的正电极形成在p电极的宽度区域内并且宽度比p电极的宽度窄。 负电极分别以相同的宽度与n电极相对，或者与面对正电极的每个负电极的侧面从面向每个n电极的每个n电极的侧面向外缩回 p电极。

公开(公告)号：US20120328067A1

公开(公告)日：2012-12-27

申请号：US13478562

申请日：2012-05-23

申请人： Tomohisa KURITA ,  Mika Tahara ,  Mitsuo Komuro ,  Toshimi Tobimatsu ,  Ryo Suzuki ,  Ryoichi Hamazaki ,  Noriyuki Katagiri ,  Masashi Tanabe

发明人： Tomohisa KURITA ,  Mika Tahara ,  Mitsuo Komuro ,  Toshimi Tobimatsu ,  Ryo Suzuki ,  Ryoichi Hamazaki ,  Noriyuki Katagiri ,  Masashi Tanabe

IPC分类号： G21C9/00 ,  G21C9/016

CPC分类号： G21C9/016 ,  G21C11/08 ,  G21C13/02 ,  G21C15/18 ,  Y02E30/40

摘要： An embodiment of a nuclear power plant has: a reactor vessel containing a core; a reactor containment vessel containing the reactor vessel; and a radiation heat reflecting member disposed at a portion below the reactor vessel inside the reactor containment vessel. The radiation heat reflecting member may block radiation heat, which is emitted toward a side wall surface of the reactor containment vessel from the core that has been put in a molten state by an accident and flowed downward from the reactor vessel to be accumulated at a lower portion of the reactor containment vessel. The radiation heat reflecting member may block radiation heat, which is emitted toward a supporting structure supporting devices disposed inside the reactor containment vessel.

摘要翻译： 核电站的一个实施例具有：包含核的反应堆容器; 容纳反应堆容器的反应堆容纳容器; 以及辐射热反射部件，设置在反应堆容纳容器内部的反应器容器下方的部分。 辐射热反射构件可以阻挡从反应堆容纳容器的侧壁表面发射的辐射热，该芯从已经被熔融状态的核心发生并且从反应堆容器向下流动以积聚在较低的 反应堆容器的一部分。 辐射热反射构件可以阻挡朝向设置在反应堆容纳容器内部的支撑结构支撑装置发射的辐射热。