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106 条记录 (耗时 0.026 秒)

    Organic semiconductor device having an active dielectric layer comprising silsesquioxanes
    71.
    发明授权
    Organic semiconductor device having an active dielectric layer comprising silsesquioxanes 有权
    具有包含倍半硅氧烷的活性介电层的有机半导体器件

    公开(公告)号：US07189663B2

    公开(公告)日：2007-03-13

    申请号：US11042240

    申请日：2005-01-25

    申请人： Zhenan Bao ,  Valerie Jeanne Kuck ,  Mark Anthony Paczkowski

    发明人： Zhenan Bao ,  Valerie Jeanne Kuck ,  Mark Anthony Paczkowski

    IPC分类号： H01L21/31 ,  H01L29/76

    CPC分类号： H01L51/0516 ,  H01L21/02137 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02315 ,  H01L21/3124 ,  H01L51/0036 ,  H01L51/0052 ,  H01L51/0078 ,  H01L51/0545

    摘要： An organic field effect transistor (FET) is described with an active dielectric layer comprising a low-temperature cured dielectric film of a liquid-deposited silsesquioxane precursor. The dielectric film comprises a silsesquioxane having a dielectric constant of greater than 2. The silsesquioxane dielectric film is advantageously prepared by curing oligomers having alkyl(methyl) and/or alkyl(methyl) pendant groups. The invention also embraces a process for making an organic FET comprising providing a substrate suitable for an organic FET; applying a liquid-phase solution of silsesquioxane precursors over the surface of the substrate; and curing the solution to form a silsesquioxane active dielectric layer. The organic FET thus produced has a high-dielectric, silsesquioxane film with a dielectric constant of greater than about 2, and advantageously, the substrate comprises an indium-tin oxide coated plastic substrate.

    摘要翻译： 有机场效应晶体管（FET）用具有液晶沉积倍半硅氧烷前体的低温固化电介质膜的有源电介质层进行描述。 电介质膜包括介电常数大于2的倍半硅氧烷。有效地通过固化具有（甲基）和/或烷基（甲基）侧基的低聚物来制备倍半硅氧烷介电膜。 本发明还包括制造有机FET的方法，其包括提供适合于有机FET的衬底; 在所述基材的表面上施加倍半硅氧烷前体的液相溶液; 并固化该溶液以形成倍半硅氧烷活性介电层。 由此产生的有机FET具有介电常数大于约2的高电介质的倍半硅氧烷膜，并且有利的是，衬底包括氧化铟锡涂覆的塑料衬底。

    Semiconductor layers with roughness patterning
    74.
    发明授权
    Semiconductor layers with roughness patterning 有权
    具有粗糙图案化的半导体层

    公开(公告)号：US06969634B2

    公开(公告)日：2005-11-29

    申请号：US10669780

    申请日：2003-09-24

    申请人： Zhenan Bao

    发明人： Zhenan Bao

    IPC分类号： H01L21/762 ,  H01L21/336 ,  H01L27/28 ,  H01L29/786 ,  H01L51/05 ,  H01L51/40 ,  H01L51/00

    CPC分类号： H01L51/0541 ,  H01L27/28 ,  H01L51/0545

    摘要： A method for making an IC on a surface of a planar substrate includes forming a continuous first layer on the surface of the substrate and pressing a surface of a stamp into the first layer to produce a pattern of non-intersecting smooth regions on the surface. A rough region of the surface of the first layer laterally borders and laterally surrounds each smooth region of the surface of the first layer. The pattern of smooth and rough regions on the surface of the first layer copies a pattern of smooth and rough areas on the surface of the stamp. The method also includes forming a continuous second layer on the patterned first layer. The first layer is one of a dielectric layer and an organic semiconductor layer, and the second layer is the other of a dielectric layer and an organic semiconductor layer.

    摘要翻译： 在平面基板的表面上制造IC的方法包括在基板的表面上形成连续的第一层，并将印模的表面按压到第一层中，以在表面上产生不相交的平滑区域的图案。 第一层的表面的粗糙区横向地邻接并横向围绕第一层的表面的每个平滑区域。 在第一层表面上的平滑和粗糙区域的图案在印模的表面上复制了平滑和粗糙区域的图案。 该方法还包括在图案化的第一层上形成连续的第二层。 第一层是电介质层和有机半导体层之一，第二层是电介质层和有机半导体层中的另一层。

    Forming patterned thin film metal layers
    78.
    发明授权
    Forming patterned thin film metal layers 有权
    形成图案化的薄膜金属层

    公开(公告)号：US06770549B2

    公开(公告)日：2004-08-03

    申请号：US10141362

    申请日：2002-05-08

    申请人： Zhenan Bao ,  Peter Kian-Hoon Ho ,  Takao Someya

    发明人： Zhenan Bao ,  Peter Kian-Hoon Ho ,  Takao Someya

    IPC分类号： H01L2120

    CPC分类号： H01L21/76838 ,  H01L21/288 ,  H01L51/0021 ,  H01L51/0024 ,  H01L51/0097 ,  H01L51/0512

    摘要： The specification describes a pattern transfer technique for forming patterns of thin films of high resolution over large areas. It involves forming a pattern layer on a transfer substrate, patterning the pattern layer while on the transfer substrate, then contacting the transfer substrate with the receiving substrate. The surface of the receiving substrate is treated to activate the surface thereby improving adhesion of the transfer pattern to the receiving substrate. The activation treatment involves forming a layer of metal particles on the surface of the receiving substrate. The pattern layer is preferably of the same metal, or a similar metal or alloy, and is transferred from the transfer substrate to the receiving substrate by metallurgical bonding. The method of the invention is particularly useful for printing metal conductor patterns (metalization), and device features, on flexible polymer substrates in, for example, thin film transistor (TFT) technology.

    摘要翻译： 本说明书描述了用于在大面积上形成高分辨率薄膜图案的图案转印技术。 它涉及在转移基板上形成图案层，在转印衬底上图案化图案层，然后使转印衬底与接收衬底接触。 处理接收基板的表面以激活表面，从而改善转印图案对接收基板的粘附。 活化处理包括在接收基材的表面上形成一层金属颗粒。 图案层优选为相同的金属或类似的金属或合金，并且通过冶金结合从转印基板转移到接收基板。本发明的方法特别适用于印刷金属导体图案（金属化）和 在诸如薄膜晶体管（TFT）技术的柔性聚合物基板上的器件特征。