SINGLE-CRYSTAL ORGANIC SEMICONDUCTOR MATERIALS AND APPROACHES THEREFOR
    3.
    发明申请
    SINGLE-CRYSTAL ORGANIC SEMICONDUCTOR MATERIALS AND APPROACHES THEREFOR 审中-公开
    单晶有机半导体材料及其应用

    公开(公告)号:US20080134961A1

    公开(公告)日:2008-06-12

    申请号:US11932057

    申请日:2007-10-31

    IPC分类号: C30B23/00 H01L51/00

    摘要: Patterned single crystals and related devices are facilitated. According to an example embodiment of the present invention, organic semiconducting single-crystals are manufactured using a plurality of surface regions on a substrate. The diffusivity and/or the rate of desorption is controlled at each surface region and at the substrate to grow at least one organic semiconducting single crystal at each surface region from a vapor-phase organic material. This control is effected, for example, before and/or during the introduction of vapor-phase organic material to the surface regions. In some embodiments, the surface regions include an organic film such as octadecyltriethoxysilane (OTS), and in other embodiments, the surface regions include carbon nanotube bundles, either of which can be implemented to exhibit a surface roughness and/or other characteristics that facilitate selective crystal nucleation.

    摘要翻译: 图形化的单晶和相关器件便利。 根据本发明的示例性实施例,使用在基板上的多个表面区域来制造有机半导体单晶。 在每个表面区域和底物处控制扩散率和/或解吸速率,以在气相有机材料的每个表面区域生长至少一个有机半导体单晶。 该控制例如在将气相有机材料引入表面区域之前和/或期间进行。 在一些实施方案中,表面区域包括诸如十八烷基三乙氧基硅烷(OTS)的有机膜,并且在其它实施方案中,表面区域包括碳纳米管束,其中任一种可以被实现为表现出表面粗糙度和/或促进选择性的其他特性 晶体成核。

    AIR-STABLE N-CHANNEL ORGANIC ELECTRONIC DEVICES
    6.
    发明申请
    AIR-STABLE N-CHANNEL ORGANIC ELECTRONIC DEVICES 有权
    空气稳定的N沟道有机电子器件

    公开(公告)号:US20110248267A1

    公开(公告)日:2011-10-13

    申请号:US13079879

    申请日:2011-04-05

    IPC分类号: H01L21/22 H01L29/04

    摘要: In connection with various example embodiments, an organic electronic device is provided with an organic material that is susceptible to decreased mobility due to the trapping of electron charge carriers in response to exposure to air. The organic material is doped with an n-type dopant that, when combined with the organic material, effects air stability for the doped organic material (e.g., exhibits a mobility that facilitates stable operation in air, such as may be similar to operation in inert environments). Other embodiments are directed to organic electronic devices n-doped and exhibiting such air stability.

    摘要翻译: 结合各种示例实施例,有机电子器件被提供有有机材料,其由于电子电荷载体响应于暴露于空气而被俘获而易于降低迁移率。 有机材料掺杂有n型掺杂剂,当与有机材料组合时,掺杂的有机材料具有空气稳定性(例如,表现出促进在空气中稳定运行的迁移率,例如可以类似于在惰性中的操作) 环境)。 其他实施方案涉及n掺杂并表现出这种空气稳定性的有机电子器件。

    Patterning crystalline compounds on surfaces
    7.
    发明授权
    Patterning crystalline compounds on surfaces 失效
    在表面上形成结晶化合物

    公开(公告)号:US07795145B2

    公开(公告)日:2010-09-14

    申请号:US11353934

    申请日:2006-02-15

    IPC分类号: H01L21/44

    摘要: A method of patterning the surface of a substrate with at least one organic semiconducting compound including: (a) providing a stamp having a surface including a plurality of indentations formed therein defining an indentation pattern contiguous with a stamping surface and defining a stamping pattern, (b) coating the stamping surface with at least one compound (C1) capable of binding to the surface of the substrate and at least one organic semiconducting compound (S), (c) contacting at least a portion of the surface of a substrate with the stamping surface to allow deposition of the compound (C1) on the substrate, (d) removing the stamping surface to provide a pattern of binding sites on the surface of the substrate, (e) applying a plurality of crystallites of the organic semiconducting compound (S) to the surface of the substrate to bind at least a portion of the applied crystallites to the binding sites on the surface of the substrate.

    摘要翻译: 一种利用至少一种有机半导体化合物对衬底的表面进行图案化的方法,包括:(a)提供具有表面的印模,所述表面包括形成在其中的多个凹口,所述压痕限定与冲压表面邻接的压痕图案并限定冲压图案( b)用至少一种能够结合到基底表面的化合物(C1)和至少一种有机半导体化合物(S)涂覆冲压表面,(c)将基底表面的至少一部分与 冲压表面以允许化合物(C1)沉积在基底上,(d)去除冲压表面以在基底表面上提供结合位点的图案,(e)施加多个有机半导体化合物的微晶( S)到基底的表面以将至少一部分施加的微晶结合到基底表面上的结合位点。

    OFETs with active channels formed of densified layers
    8.
    发明授权
    OFETs with active channels formed of densified layers 有权
    OFET具有由致密层形成的活动通道

    公开(公告)号:US07767998B2

    公开(公告)日:2010-08-03

    申请号:US10727709

    申请日:2003-12-04

    申请人: Zhenan Bao

    发明人: Zhenan Bao

    IPC分类号: H01L35/24

    摘要: The present invention provides apparatus and a method of fabricating the apparatus. The apparatus includes a substrate having a surface and an organic field-effect transistor (OFET) located adjacent the surface of the substrate. The OFET comprising a gate, a channel, a source electrode, and a drain electrode. The channel comprises a densified layer of organic molecules with conjugated multiple bonds, axes of the organic molecules being oriented substantially normal to the surface.

    摘要翻译: 本发明提供了一种装置及其制造方法。 该装置包括具有表面的衬底和位于衬底表面附近的有机场效应晶体管(OFET)。 OFET包括栅极,沟道,源电极和漏电极。 该通道包括具有共轭多重键的有机分子的致密化层,有机分子的轴线基本上垂直于表面。

    Electrical detection of selected species
    9.
    发明授权
    Electrical detection of selected species 有权
    所选物种的电检测

    公开(公告)号:US07189987B2

    公开(公告)日:2007-03-13

    申请号:US10405398

    申请日:2003-04-02

    IPC分类号: H01L51/00

    CPC分类号: G01N27/4145

    摘要: The present invention provides an organic field effect transistor and a method of fabricating the transistor. The transistor includes a semiconductive film comprising organic molecules. Probe molecules capable of binding to target molecules are coupled to an outer surface of the semiconductive film such that the interior of the film being substantially free of the probe molecules.

    摘要翻译: 本发明提供一种有机场效应晶体管及其制造方法。 晶体管包括包含有机分子的半导体膜。 能够结合靶分子的探针分子被偶联到半导体膜的外表面,使得膜的内部基本上不含探针分子。

    Semiconductor devices having regions of induced high and low conductivity, and methods of making the same
    10.
    发明授权
    Semiconductor devices having regions of induced high and low conductivity, and methods of making the same 失效
    具有诱导高导电性和低导电性的区域的半导体器件及其制造方法

    公开(公告)号:US07122828B2

    公开(公告)日:2006-10-17

    申请号:US10671303

    申请日:2003-09-24

    IPC分类号: H01L35/24

    摘要: Semiconductor apparatus comprising: a substrate having a substrate surface; a layer of a first material overlying a first region of the substrate surface; a layer of a semiconductor overlying the layer of first material and overlying a second region of the substrate surface; a first region of the layer of semiconductor, overlying the layer of first material and having a first conductivity; a second region of the layer of semiconductor, overlying the second region of the substrate surface and having a second conductivity; and the first conductivity being substantially different from the second conductivity. Such semiconductor apparatus further comprising a layer of a second material overlying the second region of the substrate surface, the second region of the layer of semiconductor overlying the layer of the second material.

    摘要翻译: 半导体装置,包括:具有基板表面的基板; 覆盖衬底表面的第一区域的第一材料层; 覆盖所述第一材料层并覆盖所述衬底表面的第二区域的半导体层; 覆盖第一材料层并具有第一导电性的半导体层的第一区域; 半导体层的第二区域,覆盖在衬底表面的第二区域上并具有第二导电性; 并且第一导电性与第二导电性基本不同。 这种半导体装置还包括覆盖衬底表面的第二区域的第二材料层,覆盖第二材料层的半导体层的第二区域。