公开(公告)号：US20060051942A1

公开(公告)日：2006-03-09

申请号：US10522488

申请日：2003-06-30

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Kunimichi Omae ,  Tomoya Iwahashi ,  Masanori Morishita

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Kunimichi Omae ,  Tomoya Iwahashi ,  Masanori Morishita

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L31/20

CPC分类号： C30B19/02 ,  C30B9/10 ,  C30B9/12 ,  C30B29/403

摘要： A method for producing a Group III element nitride single crystal, which comprises reacting at least one Group III element selected from the group consisting of gallium(Ga), aluminum(Al) and indium(In) with nitrogen(N) in a mixed flux of sodium(Na) and at least one of an alkali metal (except Na) and an alkaline earth metal. The method allows the production, with a good yield, of the single crystal of a group III element nitride which is transparent, is reduced in the density of dislocation, has a bulk form, and is large. In particular, a gallium nitride single crystal produced by the method has high quality and takes a large and transparent bulk form, and thus has a high practical value.

公开(公告)号：US20050048686A1

公开(公告)日：2005-03-03

申请号：US10884386

申请日：2004-07-02

申请人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Masanori Morishita

发明人： Yasuo Kitaoka ,  Hisashi Minemoto ,  Isao Kidoguchi ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura ,  Masanori Morishita

IPC分类号： H01L21/338 ,  H01L29/20 ,  H01L33/32 ,  H01L21/00 ,  C30B1/00 ,  H01L21/36

CPC分类号： H01L33/32 ,  H01L29/2003 ,  H01L29/66856

摘要： The present invention provides a manufacturing method in which high quality GaN crystals and GaN crystal substrates can be manufactured under mild conditions of low pressure and low temperature. In a method of manufacturing GaN crystals in which in a gas atmosphere containing nitrogen, gallium and the nitrogen are allowed to react with each other to generate GaN crystals in a mixed melt of the gallium and sodium, the gallium and the nitrogen are allowed to react with each other under a pressurizing condition that exceeds atmospheric pressure, and pressure P1 (atm (×1.013×105 Pa)) of the pressurizing condition is set so as to satisfy the condition that is expressed by the following conditional expression (I): P≦P1

摘要翻译： 本发明提供了一种制造方法，其中可以在低压和低温的温和条件下制造高质量的GaN晶体和GaN晶体衬底。 在制造GaN晶体的方法中，其中在含有氮气的气体气氛中，允许镓和氮彼此反应以在镓和钠的混合熔体中产生GaN晶体，使镓和氮反应 在超过大气压的加压条件下彼此相关，并且将加压条件的压力P1（atm（x1.013×10 5 Pa））设定为满足由以下条件式（I）表示的条件， ：P <= P1 <（P + 45）（I），其中在表达式（I）中，P（atm（x1.013×10 Pa））表示在温度下产生GaN晶体所需的最小压力 T°C。 的混合熔体。

公开(公告)号：US07247203B2

公开(公告)日：2007-07-24

申请号：US10525809

申请日：2003-08-25

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Hiroaki Adachi ,  Hiroshi Masuhara ,  Youichiroh Hosokawa ,  Kazufumi Takano

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Hiroaki Adachi ,  Hiroshi Masuhara ,  Youichiroh Hosokawa ,  Kazufumi Takano

IPC分类号： C30B29/54

CPC分类号： C30B7/00 ,  C30B29/58 ,  Y10S117/904

摘要： The present invention relates to a process for producing high-quality crystals of protein or organic substances easily and efficiently. A solution of protein or an organic substance is prepared and then is cooled slowly to be supersaturated to a low degree. This supersaturated solution is irradiated with a femtosecond laser 10. A local explosion phenomenon occurs at the focal point of the laser and thereby a crystalline nucleus is generated. A high-quality crystal is obtained when a crystal is grown on the crystalline nucleus over a long period of time. The femtosecond laser to be used herein can be a titanium:sapphire laser having a wavelength of 800 nm, a duration of 120 fs, a frequency of 1 kHz, and an output of 400 mW.

摘要翻译： 本发明涉及容易高效地生产蛋白质或有机物质的优质晶体的方法。 制备蛋白质或有机物质的溶液，然后缓慢冷却至低饱和度。 用飞秒激光10照射该过饱和溶液。 在激光的焦点发生局部爆炸现象，从而产生晶核。 当晶体长时间在晶核上生长时，获得高质量的晶体。 本文使用的飞秒激光可以是波长为800nm，持续时间为120fs，频率为1kHz，输出为400mW的钛：蓝宝石激光。

公开(公告)号：US07006539B1

公开(公告)日：2006-02-28

申请号：US09762100

申请日：1999-08-04

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

IPC分类号： H01S3/10

CPC分类号： G02F1/3551

摘要： There is provided a nonlinear optical crystal which is presented by the formula: K2Al2B2O7. This nonlinear optical crystal is a vacuum ultraviolet light generating nonlinear optical crystal which is easy to grow and of high practical use. There are also provided a wavelength conversion method using this crystal, and an element and a wavelength conversion apparatus for use in the method.

摘要翻译： 提供了一种非线性光学晶体，其由下列公式表示：K 2 2 Al 2 B 2 N 2 O 7 。 这种非线性光学晶体是一种容易生长和高实用性的真空紫外线发生非线性光学晶体。 还提供了使用该晶体的波长转换方法以及用于该方法的元件和波长转换装置。

公开(公告)号：US06843849B1

公开(公告)日：2005-01-18

申请号：US09979505

申请日：2000-05-22

申请人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

发明人： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura

IPC分类号： C30B15/00 ,  C30B15/30 ,  C30B17/00 ,  C30B29/22 ,  C30B29/30

CPC分类号： C30B15/00 ,  C30B15/305 ,  C30B17/00 ,  C30B29/10 ,  Y10T117/10 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1068

摘要： In a method for growing a single crystal by bringing a seed crystal (4) into contact with a melt (2) of raw materials melted under heating in a crucible (1) a blade member (5) or a baffle member in disposed in the raw material melt (2) in the crucible (1) and a single crystal is grown by pulling up it with rotating the crucible (1) to thereby grow various single crystals including CLBO from the highly viscous raw material melt (2) as high quality and high performance crystals.

摘要翻译： 在通过使晶种（4）与在坩埚（1）中加热熔融的原料熔体（2）接触的方法中，在设置在坩埚（1）中的叶片构件（5）或挡板构件 坩埚（1）中的原料熔融物（2）和通过使坩埚（1）旋转而拉起来生长单晶，从而以高品质从高粘度原料熔体（2）生长包括CLBO的各种单晶 和高性能晶体。

公开(公告)号：US08287760B2

公开(公告)日：2012-10-16

申请号：US12710105

申请日：2010-02-22

申请人： Masaya Ishida ,  Tatsuya Morioka ,  Daisuke Hanaoka ,  Mototaka Taneya ,  Shigeo Fujita ,  Yoichi Kawakami ,  Masafumi Harada ,  Takatomo Sasaki ,  Yusuke Mori

发明人： Masaya Ishida ,  Tatsuya Morioka ,  Daisuke Hanaoka ,  Mototaka Taneya ,  Shigeo Fujita ,  Yoichi Kawakami ,  Masafumi Harada ,  Takatomo Sasaki ,  Yusuke Mori

IPC分类号： F21K2/00

CPC分类号： B82Y20/00 ,  C09K11/0883 ,  C09K11/62 ,  H01L33/502 ,  H01S5/005 ,  H01S5/02284 ,  H01S5/02296 ,  H01S5/34333 ,  Y10S977/783 ,  Y10S977/815 ,  Y10S977/816

摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.

摘要翻译： 由发出一次光的光源和吸收初级光并发出二次光的荧光体构成的发光装置，能够提供高亮度，低功耗，长寿命，同时最小化对环境的不利影响。 荧光体由体积为2 800nm 3以下的微细晶体形式的III-V族半导体形成。 从微粒子晶体发出的光取决于其体积，因此赋予细粒子晶体预定的体积分布，可以调节二次光的波长范围。

公开(公告)号：US08037739B2

公开(公告)日：2011-10-18

申请号：US12197108

申请日：2008-08-22

申请人： Masahiro Ota ,  Noriaki Oyabu ,  Hiroaki Adachi ,  Masayuki Abe ,  Seizo Morita ,  Yusuke Mori ,  Takatomo Sasaki

发明人： Masahiro Ota ,  Noriaki Oyabu ,  Hiroaki Adachi ,  Masayuki Abe ,  Seizo Morita ,  Yusuke Mori ,  Takatomo Sasaki

IPC分类号： G01N11/00

CPC分类号： G01Q30/14 ,  G01N1/36 ,  G02B21/33 ,  G02B21/34

摘要： A method for analyzing a sample in a liquid is provided, which is suitable for easily and reliably preventing a liquid for analysis from being evaporated. When the sample in the liquid is observed by using a scanning probe microscope (SPM), a sealing liquid (17) immiscible with a liquid for analysis (16) is filled around the liquid for analysis (16), in which a sample (13) and a probe (15) are immersed, so as to form a sealing state, in which the liquid for analysis (16) is isolated from an external gas. The SPM enables the probe (15) disposed on a front end of a cantilever (14) to approach a surface of the sample (13) immersed in the liquid, scans the surface of the sample, and detects an interaction between the sample (13) and the probe (15), thereby generating an image.

摘要翻译： 提供一种用于分析液体中的样品的方法，其适于容易且可靠地防止用于分析的液体蒸发。 当使用扫描探针显微镜（SPM）观察液体中的样品时，将用于分析的液体（16）不混溶的密封液体（17）填充在用于分析的液体（16）周围，其中样品（13 ）和探针（15），以便形成用于分析用液体（16）与外部气体隔离的密封状态。 SPM使得布置在悬臂（14）的前端上的探针（15）接近浸入液体中的样品（13）的表面，扫描样品的表面，并检测样品（13）之间的相互作用 ）和探头（15），从而产生图像。

公开(公告)号：US20060187994A1

公开(公告)日：2006-08-24

申请号：US11402926

申请日：2006-04-13

申请人： Masaya Ishida ,  Tatsuya Morioka ,  Daisuke Hanaoka ,  Mototaka Taneya ,  Shigeo Fujita ,  Yoichi Kawakami ,  Masafumi Harada ,  Takatomo Sasaki ,  Yusuke Mori

发明人： Masaya Ishida ,  Tatsuya Morioka ,  Daisuke Hanaoka ,  Mototaka Taneya ,  Shigeo Fujita ,  Yoichi Kawakami ,  Masafumi Harada ,  Takatomo Sasaki ,  Yusuke Mori

IPC分类号： H01S3/09

CPC分类号： B82Y20/00 ,  C09K11/0883 ,  C09K11/62 ,  H01L33/502 ,  H01S5/005 ,  H01S5/02284 ,  H01S5/02296 ,  H01S5/34333 ,  Y10S977/783 ,  Y10S977/815 ,  Y10S977/816

摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.

摘要翻译： 由发出一次光的光源和吸收初级光并发出二次光的荧光体构成的发光装置，能够提供高亮度，低功耗，长寿命，同时最小化对环境的不利影响。 荧光体由体积为2×800nm±3以下的细颗粒晶体形式的III-V族半导体形成。 从微粒子晶体发出的光取决于其体积，因此赋予细粒子晶体预定的体积分布，可以调节二次光的波长范围。

公开(公告)号：US20060012011A1

公开(公告)日：2006-01-19

申请号：US10535741

申请日：2004-06-03

申请人： Seiji Nakahata ,  Ryu Hirota ,  Keiji Ishibashi ,  Takatomo Sasaki ,  Yusuke Mori

发明人： Seiji Nakahata ,  Ryu Hirota ,  Keiji Ishibashi ,  Takatomo Sasaki ,  Yusuke Mori

IPC分类号： H01L21/28 ,  H01L29/20

CPC分类号： C30B29/403 ,  C30B29/38 ,  C30B33/00 ,  C30B33/10 ,  H01L21/30612

摘要： A method of processing a surface of a nitride semiconductor crystal, wherein a surface of a nitride semiconductor crystal is brought into contact with a liquid containing at least Na, Li or Ca as a processing solution. In the method, the processing solution can be a liquid containing at least Na, having an Na content of 5-95 mol %. The processing solution can be a liquid containing at least Li, having an Li content of 5-100 mol %. A nitride semiconductor crystal having a maximum depth of a surface scratch of at most 0.01 μm or an average thickness of a damaged layer of at most 2 μm. Consequently, a method of processing a surface of a nitride semiconductor crystal with a decreased depth of a surface scratch or a decreased thickness of a damaged layer, and a nitride semiconductor crystal obtained with the method can be provided.

摘要翻译： 一种处理氮化物半导体晶体的表面的方法，其中使氮化物半导体晶体的表面与至少含有Na，Li或Ca的液体作为处理溶液接触。 在该方法中，处理溶液可以是含有至少Na，Na含量为5-95mol％的液体。 处理液可以是含有Li含量为5〜100摩尔％的至少Li的液体。 具有至多0.01μm的表面划痕的最大深度或至多2μm的损伤层的平均厚度的氮化物半导体晶体。 因此，可以提供一种利用该方法获得的具有降低的表面划痕深度或损伤层厚度减小的氮化物半导体晶体的表面的处理方法。

公开(公告)号：US07948673B2

公开(公告)日：2011-05-24

申请号：US12233174

申请日：2008-09-18

申请人： Masashi Yoshimura ,  Takatomo Sasaki ,  Yusuke Mori ,  Muneyuki Nishioka ,  Tomotaka Katsura ,  Tetsuo Kojima ,  Junichi Nishimae

发明人： Masashi Yoshimura ,  Takatomo Sasaki ,  Yusuke Mori ,  Muneyuki Nishioka ,  Tomotaka Katsura ,  Tetsuo Kojima ,  Junichi Nishimae

IPC分类号： G02F1/35 ,  H01S3/10

CPC分类号： G02F1/37 ,  G02F1/3551 ,  G02F2001/3505 ,  G02F2001/354

摘要： An optical wavelength conversion element includes a cesium-lithium-borate crystal processed into a 10-mm long optical element cut in an orientation that allows a fourth harmonic of a Nd:YAG laser to be generated. A transmittance (Ta) at 3589 cm−1 in an infrared transmission spectrum of the optical element is used as an index that indicates a content of water impurities in the crystal and is independent of a polarization direction. An actual measurement of the transmittance Ta is at least 1%, without taking into account loss at an optically polished surface of the crystal. A wavelength conversion device, a ultraviolet laser irradiation apparatus, a laser processing system, and a method of manufacturing an optical wavelength conversion element are also described.

摘要翻译： 光波长转换元件包括加工成允许产生Nd：YAG激光器的四次谐波的取向切割的10mm长的光学元件的铯 - 硼酸锂晶体。 光学元件的红外透射光谱中的3589cm -1处的透射率（Ta）被用作指示晶体中的水杂质含量并且与偏振方向无关的指标。 透射率Ta的实际测量值至少为1％，而不考虑在晶体的光学抛光表面处的损耗。 还描述了波长转换装置，紫外激光照射装置，激光加工系统和制造光波长转换元件的方法。