公开(公告)号：US20150325621A1

公开(公告)日：2015-11-12

申请号：US14806552

申请日：2015-07-22

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L27/15 ,  H01L27/153 ,  H01L33/005 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62

Abstract: Disclosed are a light-emitting diode with a plurality of light-emitting elements and a method for manufacturing the same. The light-emitting diode includes: a plurality of light-emitting elements arranged on a substrate; a separation groove for separating adjacent light-emitting elements; an insulation material for filling at least a part of the separation; an electrical line for electrically connecting two adjacent light-emitting elements; and an insulation layer for insulating the electrical line from the side of the light-emitting elements. Each of the light-emitting elements includes a first conduction type semiconductor layer, an activation layer, and a second conduction type semiconductor layer, wherein the first conduction type semiconductor layer has an exposed upper surface obtained by removing the second conduction type semiconductor layer and the activation layer, the exposed upper surface being adjacent to the separation groove, and the electrical line being positioned upon the top of the insulation material. The separation groove is filled with the insulation material so as to prevent cutting of the electrical line and to increase the light-emitting area.

Abstract translation: 公开了具有多个发光元件的发光二极管及其制造方法。 发光二极管包括：布置在基板上的多个发光元件; 用于分离相邻的发光元件的分离槽; 用于填充至少一部分分离物的绝缘材料; 用于电连接两个相邻的发光元件的电线; 以及用于使电线与发光元件的侧面绝缘的绝缘层。 每个发光元件包括第一导电类型半导体层，激活层和第二导电类型半导体层，其中第一导电类型半导体层具有通过去除第二导电类型半导体层获得的暴露的上表面， 活化层，暴露的上表面邻近分离槽，并且电线位于绝缘材料的顶部。 隔离槽填充有绝缘材料，以防止电线的切断和增加发光面积。

公开(公告)号：US20150243706A1

公开(公告)日：2015-08-27

申请号：US14631062

申请日：2015-02-25

Applicant: Seoul Viosys Co., Ltd.

Inventor： Se Hee Oh ,  Seom Geun Lee ,  Yeo Jin Yoon ,  Hyun Haeng Lee ,  Mae Yi Kim

IPC: H01L27/15 ,  H01L33/14 ,  H01L33/44 ,  H01L33/10 ,  H01L33/62 ,  H01L33/42

CPC classification number: H01L27/15 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: An exemplary light emitting diode includes a substrate; a first light emitting cell and a second light emitting cell disposed over the substrate and separated from each other; and an interconnection electrically connecting the first light emitting cell to the second light emitting cell. Each of the first and second light emitting cells includes a first conductive-type semiconductor layer, a second conductive-type semiconductor layer disposed over the first conductive-type semiconductor layer, and an active layer disposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer. At least one of the first light emitting cell and the second light emitting cell includes a side surface inclined with respect to the substrate. The side surface includes a first inclined portion forming an acute angle with respect to the substrate, a second inclined portion forming an obtuse angle with respect to the substrate, and an inclination discontinuity section.

Abstract translation: 示例性的发光二极管包括基板; 第一发光单元和设置在基板上并彼此分离的第二发光单元; 以及将第一发光单元电连接到第二发光单元的互连。 第一和第二发光单元中的每一个包括第一导电型半导体层，设置在第一导电型半导体层上的第二导电型半导体层以及设置在第一导电型半导体层和第二导电类型半导体层之间的有源层 第二导电型半导体层。 第一发光单元和第二发光单元中的至少一个包括相对于基板倾斜的侧表面。 侧面包括相对于基板形成锐角的第一倾斜部分，相对于基板形成钝角的第二倾斜部分和倾斜不连续部分。

公开(公告)号：US09111840B2

公开(公告)日：2015-08-18

申请号：US14053098

申请日：2013-10-14

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jeong Hun Heo ,  Yeo Jin Yoon ,  Joo Won Choi ,  Joon Hee Lee ,  Chang Yeon Kim ,  Su Young Lee

IPC: H01L27/15 ,  H01L33/62

CPC classification number: H01L33/0075 ,  H01L27/156 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00

Abstract: Exemplary embodiments of the present invention disclose a semiconductor device and a method of fabricating the same. The semiconductor device includes a gallium nitride substrate, a plurality of semiconductor stacks disposed on the gallium nitride substrate, and an insulation pattern disposed between the gallium nitride substrate and the plurality of semiconductor stacks, the insulation pattern insulating the semiconductor stacks from the gallium nitride substrate.

Abstract translation: 本发明的示例性实施例公开了一种半导体器件及其制造方法。 半导体器件包括氮化镓衬底，设置在氮化镓衬底上的多个半导体堆叠以及设置在氮化镓衬底和多个半导体堆叠之间的绝缘图案，绝缘图案使半导体堆叠与氮化镓衬底绝缘 。

公开(公告)号：US20150091038A1

公开(公告)日：2015-04-02

申请号：US14561957

申请日：2014-12-05

Applicant: Seoul Viosys Co., Ltd.

Inventor： Yeo Jin Yoon ,  Won Cheol Seo

IPC: H01L33/46 ,  H01L33/42

CPC classification number: H01L33/46 ,  H01L33/385 ,  H01L33/405 ,  H01L33/42

Abstract: A light emitting diode including a lower semiconductor layer formed on a substrate; an upper semiconductor layer disposed above the lower semiconductor layer, exposing an edge region of the lower semiconductor layer; a first electrode formed on the upper semiconductor layer; an insulation layer interposed between the first electrode and the upper semiconductor layer, to supply electric current to the lower semiconductor layer; a second electrode formed on another region of the upper semiconductor layer, to supply electric current to the upper semiconductor layer. The first electrode includes an electrode pad disposed on the upper semiconductor layer and an extension extending from the electrode pad to the exposed lower semiconductor layer. The insulation layer may have a distributed Bragg reflector structure.

Abstract translation: 一种发光二极管，包括形成在基板上的下半导体层; 上半导体层，设置在所述下半导体层上方，暴露所述下半导体层的边缘区域; 形成在上半导体层上的第一电极; 介于所述第一电极和所述上半导体层之间的绝缘层，以向所述下半导体层提供电流; 形成在上半导体层的另一区域上的第二电极，以向上半导体层提供电流。 第一电极包括设置在上半导体层上的电极焊盘和从电极焊盘延伸到暴露的下半导体层的延伸部分。 绝缘层可以具有分布式布拉格反射器结构。

公开(公告)号：US08963183B2

公开(公告)日：2015-02-24

申请号：US13760637

申请日：2013-02-06

Applicant: Seoul Viosys Co., Ltd.

Inventor： Duk Il Suh ,  Jae Moo Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim ,  Sang-Hyun Oh ,  Jin Woong Lee

IPC: H01L33/00 ,  H01L33/46

CPC classification number: H01L33/46 ,  H01L33/10 ,  H01L33/38 ,  H01L33/42 ,  H01L33/50 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to blue, green, and red light.

Abstract translation: 根据示例性实施例的发光二极管（LED）包括布置在基板的第一表面上的发光结构，所述发光结构包括第一导电类型半导体层，第二导电类型半导体层， 以及插入在第一导电型半导体层和第二导电型半导体层之间的有源层。 第一分布式布拉格反射器布置在基板的与第一表面相对的第二表面上，第一分布布拉格反射器用于反射从发光结构发射的光。 第一分布布拉格反射器相对于蓝色，绿色和红色光具有至少90％的反射率。

公开(公告)号：US08895329B2

公开(公告)日：2014-11-25

申请号：US14092203

申请日：2013-11-27

Applicant: Seoul Viosys Co., Ltd.

Inventor： Yeo Jin Yoon ,  Won Cheol Seo

IPC: H01L33/22 ,  H01L33/20 ,  H01L33/00

CPC classification number: H01L33/20 ,  H01L33/005 ,  H01L33/22

Abstract: Disclosed herein are a patterned substrate for a light emitting diode and a light emitting diode employing the patterned substrate. The substrate has top and bottom surfaces. Protrusion patterns are arranged on the top surface of the substrate. Furthermore, recessed regions surround the protrusion patterns. The recessed regions have irregular bottoms. Thus, the protrusion patterns and the recessed regions can prevent light emitted from a light emitting diode from being lost due to the total reflection to thereby improve light extraction efficiency.

Abstract translation: 本文公开了一种用于发光二极管的图案化衬底和采用图案化衬底的发光二极管。 衬底具有顶表面和底表面。 突出图案布置在基板的顶表面上。 此外，凹陷区域围绕突起图案。 凹陷区域有不规则的底部。 因此，突起图案和凹陷区域可以防止由于全反射而从发光二极管发出的光损失，从而提高光提取效率。

公开(公告)号：US20140328056A1

公开(公告)日：2014-11-06

申请号：US14295134

申请日：2014-06-03

Applicant: Seoul Viosys Co., Ltd.

Inventor： Chung Hoon Lee ,  Yeo Jin Yoon ,  Dae Won Kim ,  Dae Sung Cho ,  Kyung Hee Ye

IPC: H01L33/50 ,  F21V23/06 ,  F21K99/00

CPC classification number: H01L33/504 ,  F21K9/00 ,  F21K9/62 ,  F21K9/64 ,  F21V23/06 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/50 ,  H01L2224/48137 ,  H01L2224/49107 ,  H05B33/0821

Abstract: An AC light emitting device includes a first light emitting diode chip and a second light emitting diode chip, each of which has a plurality of light emitting cells on a single substrate. A first long-persistent phosphor is positioned on the first light emitting diode chip to perform wavelength conversion for a portion of light emitted from the first light emitting diode chip, and a second long-persistent phosphor is positioned on the second light emitting diode chip to perform wavelength conversion for a portion of light emitted from the second light emitting diode chip. The afterglow luminescence period of the second long-persistent phosphor is different from that of the first long-persistent phosphor.

Abstract translation: 交流发光装置包括第一发光二极管芯片和第二发光二极管芯片，每个芯片在单个基板上具有多个发光单元。 第一长持续荧光体位于第一发光二极管芯片上以对从第一发光二极管芯片发射的光的一部分进行波长转换，并且第二长持续荧光体位于第二发光二极管芯片上 对从第二发光二极管芯片发射的光的一部分进行波长转换。 第二长持续荧光体的余辉发光期与第一长持续荧光体不同。

公开(公告)号：US20140231748A1

公开(公告)日：2014-08-21

申请号：US14348005

申请日：2012-09-28

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jae Kwon Kim ,  Sum Geun Lee ,  Kyung Wan Kim ,  Yeo Jin Yoon ,  Duk II Suh ,  Ji Hye Kim

IPC: H01L33/22 ,  H01L33/06

CPC classification number: H01L33/20 ,  H01L27/153 ,  H01L33/007 ,  H01L33/06 ,  H01L33/10 ,  H01L33/14 ,  H01L33/16 ,  H01L33/22 ,  H01L33/32

Abstract: Provided are a substrate having concave-convex patterns, a light-emitting diode (LED) including the substrate, and a method of fabricating the LED. The LED includes a substrate, and concave-convex patterns disposed in an upper surface of the substrate and having convexes and concaves defined by the convexes. Unit light-emitting device having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer disposed on the substrate in sequence is present.

Abstract translation: 提供具有凹凸图案的基板，包括该基板的发光二极管（LED）以及制造该LED的方法。 LED包括基板和设置在基板的上表面中并具有由凸部限定的凸起和凹部的凹凸图案。 存在具有依次设置在基板上的第一导电半导体层，有源层和第二导电半导体层的单元发光器件。

公开(公告)号：US20140103388A1

公开(公告)日：2014-04-17

申请号：US14140950

申请日：2013-12-26

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Sum Geun LEE ,  Jin Cheol Shin ,  Yeo Jin Yoon

IPC: H01L33/62

CPC classification number: H01L33/387 ,  H01L27/153 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting diode according to an exemplary embodiment of the present invention includes at least two light emitting cells disposed on a substrate and spaced apart from each other, wherein each of the at least two light emitting cells comprises a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Each of the at least two light emitting cells comprises a cathode disposed on the first conductivity-type semiconductor layer, an anode disposed on the second conductivity-type semiconductor layer, and the cathode of a first light emitting cell of the at least two light emitting cells is electrically connected in series to the anode of a second light emitting cell of the at least two light emitting cells adjacent to the first light emitting cell by an interconnecting section.

Abstract translation: 根据本发明的示例性实施例的发光二极管包括至少两个设置在基板上并彼此间隔开的发光单元，其中至少两个发光单元中的每一个包括第一导电类型半导体层 ，有源层和第二导电型半导体层。 所述至少两个发光单元中的每一个包括设置在所述第一导电类型半导体层上的阴极，设置在所述第二导电类型半导体层上的阳极和所述至少两个发光的第一发光单元的阴极 电池通过互连部分串联连接到与第一发光单元相邻的至少两个发光单元的第二发光单元的阳极。

公开(公告)号：US10256387B2

公开(公告)日：2019-04-09

申请号：US15663219

申请日：2017-07-28

Applicant: Seoul Viosys Co., Ltd.

Inventor： Se Hee Oh ,  Mae Yi Kim ,  Seom Geun Lee ,  Myoung Hak Yang ,  Yeo Jin Yoon

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/14 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62

Abstract: A light emitting diode including a first light emitting cell and a second light emitting cell separated from each other on a substrate, a first transparent electrode layer electrically connected to the first light emitting cell, an interconnection electrically connecting the first light emitting cell to the second light emitting cell, and a first insulation layer. The first transparent electrode layer is disposed on an upper surface of the first light emitting cell and partially covers a side surface of the first light emitting cell. The first insulation layer separates the first transparent electrode layer from the side surface of the first light emitting cell, and includes an opening to expose a lower semiconductor layer of the first light emitting cell.