公开(公告)号：US07417259B2

公开(公告)日：2008-08-26

申请号：US10525998

申请日：2003-08-28

申请人： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

发明人： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

IPC分类号： H01L33/00

CPC分类号： H01L27/156 ,  H01L27/15 ,  H01L27/153 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/24

摘要： A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

摘要翻译： 在高驱动电压和小驱动电流下工作的发光装置。 LED（1）二次形成在例如蓝宝石的绝缘基板（10）上，并且串联连接以形成LED阵列。 两个这样的LED阵列反向并联连接到电极（32）。 在LED（1）之间以及LED（1）和电极（32）之间形成空气桥接线（28）。 LED阵列以Z字形排列以形成多个LED（1）以产生高驱动电压和小的驱动电流。 两个LED阵列相反并联连接，因此可以使用交流电源作为电源。

公开(公告)号：US20050253151A1

公开(公告)日：2005-11-17

申请号：US10525998

申请日：2003-08-28

申请人： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

发明人： Shiro Sakai ,  Jin-Ping Ao ,  Yasuo Ono

IPC分类号： H01L25/075 ,  H01L27/15 ,  H01L33/02 ,  H01L33/32 ,  H01L33/36 ,  H01L33/62

CPC分类号： H01L27/156 ,  H01L27/15 ,  H01L27/153 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/24

摘要： A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

摘要翻译： 在高驱动电压和小驱动电流下工作的发光装置。 LED（1）二次形成在例如蓝宝石的绝缘基板（10）上，并且串联连接以形成LED阵列。 两个这样的LED阵列反向并联连接到电极（32）。 在LED（1）之间以及LED（1）和电极（32）之间形成空气桥接线（28）。 LED阵列以Z字形排列以形成多个LED（1）以产生高驱动电压和小的驱动电流。 两个LED阵列相反并联连接，因此可以使用交流电源作为电源。

公开(公告)号：US06475882B1

公开(公告)日：2002-11-05

申请号：US09650949

申请日：2000-08-29

申请人： Shiro Sakai ,  Tao Wang

发明人： Shiro Sakai ,  Tao Wang

IPC分类号： H01L2120

CPC分类号： H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： A production method of a GaN-based compound semiconductor having excellent crystallinity and a GaN-based semiconductor device produced therefrom. A discrete SiN buffer body is formed on a substrate, and a GaN buffer layer is formed thereon at low temperatures and a GaN semiconductor layer is then formed at high temperatures. By forming the discrete SiN buffer body, the crystal growth, which is dependent on the substrate, of the low-temperature buffer layer is inhibited and monocrystallization is promoted to generate seed crystals used at the time of growing the GaN buffer layer. Further, by forming SiO2 discretely between the substrate and the SiN buffer body or by forming InGaN or a superlattice layer on the GaN semiconductor layer, distortion of the GaN semiconductor layer is reduced.

摘要翻译： 具有优异结晶性的GaN基化合物半导体的制造方法和由其制造的GaN基半导体器件。 在衬底上形成分立的SiN缓冲体，在低温下形成GaN缓冲层，然后在高温下形成GaN半导体层。 通过形成离散的SiN缓冲体，抑制了低温缓冲层的取决于衬底的晶体生长，促进了单晶化，从而在生长GaN缓冲层时产生晶种。 此外，通过在衬底和SiN缓冲体之间离散形成SiO 2，或者通过在GaN半导体层上形成InGaN或超晶格层，GaN半导体层的失真减小。

公开(公告)号：US06436224B1

公开(公告)日：2002-08-20

申请号：US09402993

申请日：1999-10-13

申请人： Hiroyuki Nishimura ,  Yuji Higuchi ,  Shinichi Kawasaki ,  Hiroyuki Maeba ,  Hirofumi Ueda ,  Shiro Sakai ,  Hiroaki Zaima

发明人： Hiroyuki Nishimura ,  Yuji Higuchi ,  Shinichi Kawasaki ,  Hiroyuki Maeba ,  Hirofumi Ueda ,  Shiro Sakai ,  Hiroaki Zaima

IPC分类号： C09J10100

CPC分类号： B29C65/8223 ,  B29C65/342 ,  B29C65/3476 ,  B29C65/485 ,  B29C66/1122 ,  B29C66/5221 ,  B29C66/5229 ,  B29C66/71 ,  F16L47/02 ,  F16L47/03 ,  B29K2023/00

摘要： The present invention provides a technique for joining polyolefin pipes by means of a polyolefin joint, the method comprising the steps of placing a treatment containing a silicon compound or a treatment containing a silicon compound and a reaction accelerator between the pipes and the joint and heating a joining portion.

摘要翻译： 本发明提供了一种通过聚烯烃接头接合聚烯烃管的技术，该方法包括以下步骤：在管和接头之间放置含有硅化合物的处理物或含有硅化合物和反应促进剂的处理物，并加热 接合部分。

公开(公告)号：US4963508A

公开(公告)日：1990-10-16

申请号：US483364

申请日：1990-02-22

申请人： Masayoshi Umeno ,  Shiro Sakai ,  Shinichiro Yahagi

发明人： Masayoshi Umeno ,  Shiro Sakai ,  Shinichiro Yahagi

IPC分类号： H01L21/20 ,  H01L29/04 ,  H01L29/267 ,  H01L31/0693 ,  H01L31/105 ,  H01L31/18 ,  H01L33/00

CPC分类号： H01L31/0693 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/267 ,  H01L31/105 ,  H01L31/184 ,  H01L33/0066 ,  Y02E10/544 ,  Y10S117/902 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S148/16 ,  Y10S438/933 ,  Y10S438/938

摘要： A semiconductor wafer having an epitaxial GaAs layer, including a monocrystalline Si substrate having a major surface which is inclined at an off angle between 0.5.degree. and 5.degree. with respect to (100); and at least one intermediate layer epitaxially grown on the major surface of the monocrystalline Si substrate, as a buffer layer for accommodating a lattice mismatch between the Si substrate and the epitaxial GaAs layer which is epitaxially grown on a major surface of the top layer of the at least one intermediate layer. The at least one intermediate layer may comprise one or mor GaP/GaAsP, GaAsP/GaAs superlattice layers. the wafer may be used to produce a seimconductor light emitting element which has a plurality of crystalline gaAs layers including a light emitting layer epitaxially grown on the GaAs layer on the intermediate layer. The wafer may also be used to produce a compound semiconductor device such as amplifying and switching elements, light emitting and receiving elements and photovolataic elements. Methods for producing the semiconductor wafer, light emitting element and compound semiconductor devices are also disclosed.

公开(公告)号：US3969329A

公开(公告)日：1976-07-13

申请号：US541623

申请日：1975-01-16

申请人： Eiichi Hirata ,  Shin-ichi Isaoka ,  Shiro Sakai

发明人： Eiichi Hirata ,  Shin-ichi Isaoka ,  Shiro Sakai

IPC分类号： B01D21/01 ,  C02F1/54 ,  C08F2/00 ,  C08F2/10 ,  C08F20/56 ,  C08F28/00 ,  C08F120/52 ,  C08G75/00

CPC分类号： C02F1/54 ,  C08F20/56

摘要： Water-soluble high molecular weight polymers, useful as coagulating agents, are prepared by initiating the polymerization of acrylamide or a monovinyl monomer mixture containing a predominant amount of acrylamide in an acetone-water mixture at a temperature of not lower than 5.degree.C but of lower than 25.degree.C in the presence of polyvinyl alcohol and a catalyst, the concentration of the monomer in the polymerization reaction mixture being 15 to 30 % by weight and the concentration of acetone in the acetone-water mixture being 15 to 35 % by weight, and continuing the polymerization reaction while controlling the viscosity of the reaction system by adding a water-miscible organic solvent having a small chain transfer coefficient to the reaction system with the progress of the polymerization reaction.

摘要翻译： 可用作凝结剂的水溶性高分子量聚合物通过在不低于5℃的温度下引发丙烯酰胺或含有主要量的丙烯酰胺的单乙烯基单体混合物在丙酮 - 水混合物中的聚合来制备，但是 在聚乙烯醇和催化剂存在下低于25℃，聚合反应混合物中单体的浓度为15〜30重量％，丙酮 - 水混合物中丙酮的浓度为15〜35重量％ 并且随着聚合反应的进行，通过向反应体系中加入具有小链转移系数的水混溶性有机溶剂来控制反应体系的粘度，并继续进行聚合反应。