INTEGRATED MIM DIODE
    72.
    发明申请

    公开(公告)号:US20200168747A1

    公开(公告)日:2020-05-28

    申请号:US16668004

    申请日:2019-10-30

    Abstract: In an integrated circuit, a metal-insulator-metal (MIM) diode includes: a first metallization structure level having a first metal layer; a first dielectric layer over the first metal layer; a metal contact or via on the first metal layer and extending through a portion of the first dielectric layer; and a second metallization structure level having a second metal layer; and a second dielectric layer over the second metal layer. The diode has a first electrode on the metal contact or via, a multilayer dielectric structure on the first electrode, and a second electrode between the multilayer dielectric structure and the second metal layer.

    Hermetically sealed molecular spectroscopy cell

    公开(公告)号:US10549986B2

    公开(公告)日:2020-02-04

    申请号:US15697525

    申请日:2017-09-07

    Abstract: An illustrate method (and device) includes etching a cavity in a first substrate (e.g., a semiconductor wafer), forming a first metal layer on a first surface of the first substrate and in the cavity, and forming a second metal layer on a non-conductive structure (e.g., glass). The method also may include removing a portion of the second metal layer to form an iris to expose a portion of the non-conductive structure, forming a bond between the first metal layer and the second metal layer to thereby attach the non-conductive structure to the first substrate, sealing an interface between the non-conductive structure and the first substrate, and patterning an antenna on a surface of the non-conductive structure.

    Integrated circuit nanoparticle thermal routing structure over interconnect region

    公开(公告)号:US10529641B2

    公开(公告)日:2020-01-07

    申请号:US15361390

    申请日:2016-11-26

    Abstract: An integrated circuit has a thermal routing structure above a top interconnect level. The top interconnect level includes interconnects connected to lower interconnect levels, and does not include bond pads, probe pads, input/output pads, or a redistribution layer to bump bond pads. The thermal routing structure extends over a portion, but not all, of a plane of the integrated circuit containing the top interconnect level. The thermal routing structure includes a layer of nanoparticles in which adjacent nanoparticles are attached to each other. The layer of nanoparticles is free of an organic binder material. The thermal routing structure has a thermal conductivity higher than the metal in the top interconnect level. The layer of nanoparticles is formed by an additive process.

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