公开(公告)号：US20130052816A1

公开(公告)日：2013-02-28

申请号：US13582239

申请日：2011-03-02

申请人： Hiroshi Kambayashi ,  Akinobu Teramoto ,  Tadahiro Ohmi

发明人： Hiroshi Kambayashi ,  Akinobu Teramoto ,  Tadahiro Ohmi

IPC分类号： H01L21/28

CPC分类号： H01L21/28575 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/66522

摘要： A method of producing a semiconductor transistor involving formation of an ohmic electrode on an active layer composed of a GaN-based semiconductor includes a process of forming a first layer 11 composed of tantalum nitride on an active layer 3 and a second layer 12 composed of Al layered on the first layer 11 and a process of forming ohmic electrodes 9s and 9d in ohmic contact with the active layer 3 by heat treating the first layer 11 and the second layer 12 at a temperature of from 520° C. to 600° C.

摘要翻译： 涉及在由GaN基半导体构成的有源层上形成欧姆电极的半导体晶体管的制造方法包括在有源层3上形成由氮化钽构成的第一层11和由Al构成的第二层12的工序 层叠在第一层11上，并且通过在520℃至600℃的温度下热处理第一层11和第二层12，形成欧姆电极9s和9d与有源层3欧姆接触的工艺。

公开(公告)号：US08299403B2

公开(公告)日：2012-10-30

申请号：US12298192

申请日：2007-04-20

申请人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Sadao Kobayashi ,  Yoshihide Wakayama ,  Kazutaka Uekado

发明人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Sadao Kobayashi ,  Yoshihide Wakayama ,  Kazutaka Uekado

IPC分类号： F23Q7/22

CPC分类号： H01L21/67103 ,  C23C14/22 ,  C23C14/56 ,  C23C16/4412 ,  F01N13/08 ,  F01N13/146 ,  F16L53/38 ,  F16L58/00 ,  F16L59/065 ,  Y10T428/2933

摘要： A heating device includes a heat resisting vacuum insulator (4) wound around the outer periphery of an electric heater (3) disposed along the outer wall of an exhaust pipe (1), wherein the electric heater (3) has a resistance heating element and a heat resisting electric insulator covering this resistance heating element, and the heat resisting vacuum insulator (4) includes a hollow platy covering material air-tightly sealed thereinside by a metal seat (5) having a heat resisting temperature of at least 100° C., and a fibrous or granular filling material (6) filled in the hollow portion of this covering material and having a heat resisting temperature of at least 100° C., the inside of the covering material being kept in a vacuum state.

摘要翻译： 加热装置包括围绕沿着排气管（1）的外壁设置的电加热器（3）的外周缠绕的耐热真空绝缘体（4），其中电加热器（3）具有电阻加热元件， 覆盖该电阻加热元件的耐热电绝缘体，并且耐热真空绝热体（4）包括由耐热温度为至少100℃的金属座（5）气密地密封在其中的中空板状覆盖材料。 以及填充在该覆盖材料的中空部分中并具有至少100℃的耐热温度的纤维或颗粒填充材料（6），覆盖材料的内部保持在真空状态。

公开(公告)号：US20120247961A1

公开(公告)日：2012-10-04

申请号：US13463315

申请日：2012-05-03

申请人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Hitoshi Morinaga ,  Yasuhiro Kawase ,  Masafumi Kitano ,  Fumikazu Mizutani ,  Makoto Ishikawa

发明人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Hitoshi Morinaga ,  Yasuhiro Kawase ,  Masafumi Kitano ,  Fumikazu Mizutani ,  Makoto Ishikawa

IPC分类号： C25D11/04 ,  C25D3/00 ,  C25D19/00 ,  C25D5/50 ,  C25D11/10 ,  C25D7/00 ,  B82Y40/00 ,  B82Y99/00

CPC分类号： C25D11/06 ,  C25D11/18 ,  Y10T428/265

摘要： A metal oxide film suitable for protection of metals, composed mainly of aluminum. A metal oxide film includes a film of an oxide of a metal composed mainly of aluminum, having a thickness of 10 nm or greater, and exhibiting a moisture release rate from the film of 1E18 mol./cm2 or less. Further, there is provided a process for producing a metal oxide film, wherein a metal composed mainly of aluminum is subjected to anodic oxidation in a chemical solution of 4 to 10 pH value so as to obtain a metal oxide film.

摘要翻译： 适用于主要由铝组成的金属保护金属氧化物膜。 金属氧化物膜包括厚度为10nm以上的主要由铝构成的金属的氧化物的膜，并且具有1E18mol / cm 2以下的膜的水分释放率。 此外，提供了一种制造金属氧化物膜的方法，其中主要由铝组成的金属在pH值为4至10的化学溶液中进行阳极氧化，以获得金属氧化物膜。

公开(公告)号：US20120241023A1

公开(公告)日：2012-09-27

申请号：US13508448

申请日：2010-10-29

申请人： Nobukazu Ikeda ,  Michio Yamaji ,  Tsuyoshi Tanikawa ,  Hiroshi Kaneko ,  Yasushi Yagi ,  Yuji Ono ,  Tadahiro Ohmi ,  Yasuyuki Shirai

发明人： Nobukazu Ikeda ,  Michio Yamaji ,  Tsuyoshi Tanikawa ,  Hiroshi Kaneko ,  Yasushi Yagi ,  Yuji Ono ,  Tadahiro Ohmi ,  Yasuyuki Shirai

IPC分类号： F16K31/128 ,  F16K1/34

CPC分类号： F16K31/126 ,  F16K1/34 ,  F16K25/005 ,  Y10T137/776

摘要： A control valve device develops opening/closing accuracy of a valve assembly. The valve head 310a is configured to open and close a transfer path formed in the valve housing 305 by transmitting the power to the valve assembly 310 from the power transmission member according to a pressure ratio between working fluid supplied to the first space Us and the second space Ls, respectively. The valve head has a Vickers hardness larger than a Vickers hardness of a valve seat of the transfer path to be in contact with the valve head, and a hardness difference therebetween is set to be about 200 Hv to about 300 Hv.

摘要翻译： 控制阀装置产生阀组件的开/关精度。 阀头310a被构造成通过根据供应到第一空间Us的工作流体与第二空间的第二压力之间的压力比将从动力传递构件传递到阀组件310的动力来打开和关闭形成在阀壳体305中的传送路径 空间Ls。 阀头的维氏硬度大于与阀头接触的传送路径的阀座的维氏硬度，并且其间的硬度差设定为约200Hv至约300Hv。

公开(公告)号：US08263174B2

公开(公告)日：2012-09-11

申请号：US12304316

申请日：2007-06-13

申请人： Yasushi Yagi ,  Shingo Watanabe ,  Toshihisa Nozawa ,  Chuichi Kawamura ,  Kimihiko Yoshino ,  Tadahiro Ohmi

发明人： Yasushi Yagi ,  Shingo Watanabe ,  Toshihisa Nozawa ,  Chuichi Kawamura ,  Kimihiko Yoshino ,  Tadahiro Ohmi

IPC分类号： B05D5/06 ,  B05D5/12 ,  C23C16/00 ,  H01J9/00

CPC分类号： H01L51/001 ,  C23C14/12 ,  C23C14/28 ,  H01L51/56

摘要： Disclosed is a light emitting device manufacturing apparatus including a plurality of processing chambers for performing a substrate processing for forming, on a target substrate, a light emitting device having multiple layers including an organic layer, wherein each of the plurality of processing chambers is configured to perform a substrate process on the target substrate while maintaining the target substrate such that its device forming surface, on which the light emitting device is to be formed, is oriented toward a direction opposite to a direction of gravity.

摘要翻译： 公开了一种发光器件制造设备，包括：多个处理室，用于执行用于在目标衬底上形成包括有机层的多层的发光器件的衬底处理，其中，所述多个处理室中的每一个被配置为 在目标衬底上执行衬底处理，同时保持目标衬底，使得要在其上形成发光器件的器件形成表面朝向与重力方向相反的方向。

公开(公告)号：US08183670B2

公开(公告)日：2012-05-22

申请号：US11651034

申请日：2007-01-09

申请人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto ,  Hiroshi Akahori ,  Keiichi Nii

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto ,  Hiroshi Akahori ,  Keiichi Nii

IPC分类号： H01L29/04

CPC分类号： H01L21/3185 ,  H01L21/30604 ,  H01L21/31654 ,  H01L21/318 ,  H01L29/6659

摘要： In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.

摘要翻译： 在形成在具有大致（110）晶面取向的硅表面上的半导体器件中，硅表面变平，使得表面Ra的算术平均偏差不大于0.15nm，优选为0.09nm，这使得能够制造 高迁移率的n-MOS晶体管。 通过在脱氧H 2 O或低OH密度气氛中清洗硅表面，通过在氧自由基气氛中重复自牺牲氧化物膜的沉积工艺和自牺牲氧化物膜的去除工艺来获得这种扁平化的硅表面 ，或通过氢或重氢强烈地终止硅表面。 自牺牲氧化膜的沉积工艺可以通过各向同性氧化进行。

公开(公告)号：US08146924B2

公开(公告)日：2012-04-03

申请号：US12137361

申请日：2008-06-11

申请人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Yasushi Aburatani ,  Akira Muramatsu ,  Masayuki Noguchi ,  Kouji Sato ,  Satoshi Kumaki

发明人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Yasushi Aburatani ,  Akira Muramatsu ,  Masayuki Noguchi ,  Kouji Sato ,  Satoshi Kumaki

IPC分类号： F16J15/12

CPC分类号： F16J15/0887

摘要： A low-compression force metal gasket includes a coating layer containing a polymer material on at least a sealing surface of the gasket, and the coating layer satisfies the following conditions (1) to (3): (1) the layer comprises a resin, a rubber or a mixture thereof having an oxygen gas permeability coefficient at 25° C. of 10×10−12 to 0.1×10−12 (m2/s); (2) when the layer is compression deformed, the storage elastic modulus (E′) at 200° C. is in the range of 1.0×107 to 1.0×102 Pa; and (3) the coating layer has a thickness of 1 to 40 μm. The gasket provides a high seal at a low clamping force.

摘要翻译： 低压力金属垫片包括在垫片的至少密封面上含有聚合物材料的涂层，涂层满足以下条件（1）〜（3）：（1）该层包含树脂， 在25℃下的氧气渗透系数为10×10-12〜0.1×10-12（m2 / s）的橡胶或其混合物; （2）当层压缩变形时，200℃下的储能弹性模量（E'）在1.0×10 7〜1.0×10 2 Pa的范围内; 和（3）涂层的厚度为1〜40μm。 垫圈在低夹紧力下提供高密封。

公开(公告)号：US08138527B2

公开(公告)日：2012-03-20

申请号：US12309244

申请日：2007-07-12

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Rihito Kuroda

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Rihito Kuroda

IPC分类号： H01L27/148

CPC分类号： H01L27/1203 ,  H01L21/28202 ,  H01L29/518 ,  H01L29/78654 ,  H01L29/78696

摘要： An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×1017 cm−3 to achieve a large gate voltage swing.

摘要翻译： 累积模式晶体管的沟道区域中的半导体层的杂质浓度高于2×1017cm-3，以实现大的栅极电压摆动。

公开(公告)号：US08114245B2

公开(公告)日：2012-02-14

申请号：US10304869

申请日：2002-11-26

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Haruyuki Takano ,  Yusuke Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Haruyuki Takano ,  Yusuke Hirayama

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/509 ,  C23C16/52 ,  C23C16/505 ,  C23C16/22 ,  C23C16/06

CPC分类号： H01J37/32623 ,  H01J37/32082 ,  H01J37/3266

摘要： A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The plasma etching device has magnetic field applying means which has two parallel plate electrodes I and II and RF power applying means, with the base set on the electrode I, and which is horizontal and unidirectional with respect to the surface of the base where plasma etching is carried out. In this plasma etching device, an auxiliary electrode is provided at least on the upstream side of the base in a flow of electron current generated by the magnetic field applying means. The auxiliary electrode includes a local electrode arranged on the side facing the electrode II and means for adjusting impedance provided at a part of the local electrode to be electrically connected with the electrode I.

摘要翻译： 一种等离子体蚀刻装置，其具有能够实现基底表面上产生的等离子体的均匀等离子体密度的辅助电极，并且能够相对于基座进行均匀蚀刻而不依赖于压力而不旋转磁场施加装置。 等离子体蚀刻装置具有磁场施加装置，其具有两个平行板电极I和II以及RF功率施加装置，其基极设置在电极I上，并且相对于基板的表面是水平和单向的，其中等离子体蚀刻 完成了。 在该等离子体蚀刻装置中，在由磁场施加装置产生的电流的流动中，至少在基座的上游侧设置有辅助电极。 辅助电极包括布置在面向电极II的一侧的局部电极和用于调节局部电极的一部分以与电极I电连接的阻抗的装置。

公开(公告)号：US08047225B2

公开(公告)日：2011-11-01

申请号：US12422136

申请日：2009-04-10

申请人： Tadahiro Ohmi ,  Kouji Nishino ,  Masaaki Nagase ,  Ryousuke Dohi ,  Nobukazu Ikeda ,  Ryutaro Nishimura

发明人： Tadahiro Ohmi ,  Kouji Nishino ,  Masaaki Nagase ,  Ryousuke Dohi ,  Nobukazu Ikeda ,  Ryutaro Nishimura

IPC分类号： F16K31/42

CPC分类号： F16K47/02 ,  Y10T137/0324 ,  Y10T137/0396 ,  Y10T137/7761 ,  Y10T137/7762 ,  Y10T137/7842 ,  Y10T137/86389 ,  Y10T137/86397 ,  Y10T137/86461

摘要： The water hammerless opening device comprises an actuator operating type valve installed on the fluid passage, an electro-pneumatic conversion device to supply the 2-step actuator operating pressure Pa to the afore-mentioned actuator operating type valve, a vibration sensor removably fixed to the pipe passage on the upstream side of the actuator operating type valve, and a tuning box to which the vibration detecting signal Pr detected by the vibration sensor is inputted, through which the control signal Sc to control the step operating pressure Ps′ of the afore-mentioned 2-step actuator operating pressure Pa is outputted to the electro-pneumatic conversion device, and with which the 2-step actuator operating pressure Pa, of the step operating pressure Ps′ which makes the vibration detecting signal Pr nearly zero, is outputted from the electro-pneumatic conversion by adjusting the control signal Sc.

摘要翻译： 无水锤打开装置包括安装在流体通道上的致动器操作型阀，向上述致动器操作型阀提供2级致动器操作压力Pa的电动气动转换装置，可拆卸地固定到 在致动器操作型阀的上游侧的管道通道和输入了由振动传感器检测到的振动检测信号Pr的调谐箱，通过该调谐箱控制控制信号Sc以控制前述的操作压力Ps' 将上述的2步执行器工作压力Pa输出到电动气动变换装置，将使振动检测信号Pr接近零的阶梯操作压力Ps'的2级致动器工作压力Pa'从 通过调节控制信号Sc进行电 - 气转换。