公开(公告)号：US11221554B2

公开(公告)日：2022-01-11

申请号：US16746640

申请日：2020-01-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Pei-Cheng Hsu ,  Ta-Cheng Lien ,  Hsin-Chang Lee

IPC: G03F1/24 ,  G03F1/22

Abstract: An extreme ultra-violet (EUV) mask and method for fabricating the same is disclosed. For example, the EUV mask includes a substrate, a multi-layered mirror layer formed on the substrate, a metal capping layer formed on the multi-layered mirror layer, and a multi-layered absorber layer formed on the metal capping layer. The multi-layered absorber layer includes features etched into the multi-layered absorber layer to define structures on a semiconductor device.

公开(公告)号：US11143954B2

公开(公告)日：2021-10-12

申请号：US16018444

申请日：2018-06-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Chang Hsueh ,  Ta-Cheng Lien ,  Chia-Jen Chen ,  Hsin-Chang Lee

IPC: G03F1/70 ,  G03F1/38 ,  G03F1/54 ,  G03F1/24 ,  G03F1/36

Abstract: Photomasks and methods of fabricating the photomasks are provided herein. In some examples, a layout for forming an integrated circuit device is received. The layout includes a set of printing features. A region of the layout is identified. The region is at a distance from the set of printing features such that an exposure region associated with a feature in the region does not affect a set of exposure regions associated with the set of printing features. A plurality of non-printing features is inserted into the region. A photomask is fabricated based on the layout.

公开(公告)号：US20210311383A1

公开(公告)日：2021-10-07

申请号：US17350685

申请日：2021-06-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Pei-Cheng Hsu ,  Yih-Chen Su ,  Chi-Kuang Tsai ,  Ta-Cheng Lien ,  Tzu Yi Wang ,  Jong-Yuh Chang ,  Hsin-Chang Lee

IPC: G03F1/24 ,  G03F1/26 ,  G03F7/20 ,  H01L21/263 ,  G03F1/80 ,  G03F1/84

Abstract: A reflective mask includes a reflective multilayer over a substrate, a capping layer over the reflective multilayer, an absorber layer over the capping layer and including a top surface, and a protection layer directly on the top surface of the absorber layer. The absorber layer is formed of a first material and the protection layer is formed of a second material that is less easily to be oxidized than the first material.

公开(公告)号：US20190391480A1

公开(公告)日：2019-12-26

申请号：US16018444

申请日：2018-06-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Chang Hsueh ,  Ta-Cheng Lien ,  Chia-Jen Chen ,  Hsin-Chang Lee

IPC: G03F1/20 ,  G03F1/38 ,  G03F1/78 ,  G03F1/24 ,  G03F1/54 ,  G03F7/20 ,  H01L21/033

Abstract: Photomasks and methods of fabricating the photomasks are provided herein. In some examples, a layout for forming an integrated circuit device is received. The layout includes a set of printing features. A region of the layout is identified. The region is at a distance from the set of printing features such that an exposure region associated with a feature in the region does not affect a set of exposure regions associated with the set of printing features. A plurality of non-printing features is inserted into the region. A photomask is fabricated based on the layout.

公开(公告)号：US10394114B2

公开(公告)日：2019-08-27

申请号：US15597992

申请日：2017-05-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Yue Lin ,  Hsin-Chang Lee

IPC: G03F1/26 ,  G03F1/34 ,  G03F1/80 ,  H01L21/266 ,  G03F1/38

Abstract: The present disclosure provides a phase shift mask. The phase shift mask includes a transparent substrate; an etch stop layer disposed on the substrate; and a tunable transparent material layer disposed on the etch stop layer and patterned to have an opening, wherein the tunable transparent material layer is designed to provide phase shift and has a transmittance greater than 90%.

公开(公告)号：US20190196322A1

公开(公告)日：2019-06-27

申请号：US15851829

申请日：2017-12-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Hsiang Lin ,  Chien-Cheng Chen ,  Hsin-Chang Lee ,  Chia-Jen Chen ,  Pei-Cheng Hsu ,  Yih-Chen Su ,  Gaston Lee ,  Tran-Hui Shen

IPC: G03F1/24 ,  G03F1/54 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F1/54 ,  G03F7/2004

Abstract: A lithography mask includes a substrate, a reflective structure disposed over a first side of the substrate, and a patterned absorber layer disposed over the reflective structure. The lithography mask includes a first region and a second region that surrounds the first region in a top view. The patterned absorber layer is located in the first region. A substantially non-reflective material is located in the second region. The lithography mask is formed by forming a reflective structure over a substrate, forming an absorber layer over the reflective structure, defining a first region of the lithography mask, and defining a second region of the lithography mask. The defining of the first region includes patterning the absorber layer. The second region is defined to surround the first region in a top view. The defining of the second region includes forming a substantially non-reflective material in the second region.

公开(公告)号：US20180149959A1

公开(公告)日：2018-05-31

申请号：US15670183

申请日：2017-08-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Yue Lin ,  Hsin-Chang Lee ,  Chia-Jen Chen ,  Chih-Cheng Lin ,  Anthony Yen ,  Chin-Hsiang Lin

IPC: G03F1/24 ,  G03F1/54 ,  G03F1/42 ,  G03F1/26 ,  G03F1/48

CPC classification number: G03F1/24 ,  G03F1/26 ,  G03F1/42 ,  G03F1/48 ,  G03F1/50 ,  G03F1/54

Abstract: A lithography mask includes a substrate that contains a low thermal expansion material (LTEM). A reflective structure is disposed over a first side of the substrate. An absorber layer is disposed over the reflective structure. The absorber layer contains one or more first overlay marks. A conductive layer is disposed over a second side of the substrate, the second side being opposite the first side. The conductive layer contains portions of one or more second overlay marks. In some embodiments, the lithography mask includes an EUV lithography mask.

公开(公告)号：US20180059534A1

公开(公告)日：2018-03-01

申请号：US15356204

申请日：2016-11-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Chiang Tu ,  Chun-Lang Chen ,  Chue San Yoo ,  Jong-Yuh Chang ,  Chia-Shiung Tsai ,  Ping-Yin Liu ,  Hsin-Chang Lee ,  Chih-Cheng Lin ,  Yun-Yue Lin

IPC: G03F1/62 ,  H01L21/033

CPC classification number: G03F1/62 ,  C23C14/16 ,  C23C14/165 ,  C23C14/18 ,  C23C16/01 ,  C23C16/26 ,  C23C16/56 ,  C23C28/32 ,  G03F1/64 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337

Abstract: A method includes depositing a first material layer over a first substrate; and depositing a graphene layer over the first material layer. The method further includes depositing an amorphous silicon layer over the graphene layer and bonding the amorphous silicon layer to a second substrate, thereby forming an assembly. The method further includes annealing the assembly, thereby converting the amorphous silicon layer to a silicon oxide layer. The method further includes removing the first substrate from the assembly and removing the first material layer from the assembly, thereby exposing the graphene layer.

公开(公告)号：US20180059531A1

公开(公告)日：2018-03-01

申请号：US15597992

申请日：2017-05-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Yue Lin ,  Hsin-Chang Lee

IPC: G03F1/26 ,  G03F7/20 ,  G03F7/26 ,  G03F7/40 ,  H01L21/027 ,  H01L21/308 ,  H01L21/266

CPC classification number: G03F1/26 ,  G03F1/34 ,  G03F1/38 ,  G03F1/80

Abstract: The present disclosure provides a phase shift mask. The phase shift mask includes a transparent substrate; an etch stop layer disposed on the substrate; and a tunable transparent material layer disposed on the etch stop layer and patterned to have an opening, wherein the tunable transparent material layer is designed to provide phase shift and has a transmittance greater than 90%.