公开(公告)号：US08652267B2

公开(公告)日：2014-02-18

申请号：US12591115

申请日：2009-11-09

申请人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Shozo Shirai

发明人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Shozo Shirai

IPC分类号： B08B3/00

CPC分类号： G03F7/423 ,  G03F7/0752 ,  G03F7/11 ,  G03F7/425

摘要： There is disclosed a coated-type silicon-containing film stripping process for stripping off to remove a coated-type silicon-containing film obtained by coating a silicon-containing film composition used in a lithography on a substrate, comprising, at least: a first step of treating the silicon-containing film with an acidic stripping solution containing sulphate ion and/or fluoride ion; and a second step of treating the silicon-containing film with an alkaline stripping solution containing a nitrogen compound. There can be provided a process for allowing a silicon-containing film, which has not been conventionally removed unless dry stripping is adopted, to be removed by a stripping process based on a stripping solution (wet stripping).

摘要翻译： 公开了一种涂覆型含硅膜剥离工艺，用于剥离以除去通过在基板上涂布用于光刻的含硅膜组合物而获得的涂覆型含硅膜，该涂覆型含硅膜至少包括：第一 用含有硫酸根离子和/或氟离子的酸性汽提溶液处理含硅膜的步骤; 以及用含有氮化合物的碱性汽提溶液处理含硅膜的第二步骤。 可以提供一种方法，用于允许除去干法汽提之前没有常规去除的含硅膜通过基于剥离溶液（湿剥离）的汽提方法除去。

公开(公告)号：US08501386B2

公开(公告)日：2013-08-06

申请号：US13205262

申请日：2011-08-08

申请人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Koji Hasegawa

发明人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Koji Hasegawa

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/075 ,  G03F7/09 ,  G03F7/40

CPC分类号： G03F7/094 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/11

摘要： A thermosetting silicon-containing film-forming composition for forming a silicon-containing film to be formed in a multi-layer resist process used in lithography, the composition including at least: (A) a silicon-containing compound obtained by hydrolysis-condensation of a hydrolyzable silicon compound and compound(s) selected from the group consisting of a hydrolyzable silicon compound and a reactive compound; (B) a thermal crosslinking accelerator; (C) an organic acid with one, or two or more valency having 1 to 30 carbon atoms; and (D) an organic solvent.

摘要翻译： 一种用于形成用于光刻的多层抗蚀剂工艺中的含硅膜的热固性含硅膜形成组合物，该组合物至少包括：（A）通过水解缩合得到的含硅化合物 可水解硅化合物和选自可水解硅化合物和反应性化合物的化合物; （B）热交联促进剂; （C）具有1至30个碳原子的一价或两价或更多价的有机酸; 和（D）有机溶剂。

公开(公告)号：US20100086872A1

公开(公告)日：2010-04-08

申请号：US12461726

申请日：2009-08-21

申请人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano

发明人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano

IPC分类号： G03F7/00

CPC分类号： G03F7/11 ,  C08G77/58 ,  C09D183/04 ,  G03F7/0752

摘要： There is disclosed a thermosetting metal oxide-containing film-forming composition for forming a metal oxide-containing film to be formed in a multilayer resist process used in lithography, the thermosetting metal oxide-containing film-forming composition comprising, at least: (A) a metal oxide-containing compound obtained by hydrolytic condensation of a hydrolyzable silicon compound and a hydrolyzable metal compound; (B) a thermal crosslinking accelerator; (C) a monovalent, divalent, or higher organic acid having 1 to 30 carbon atoms; (D) a trivalent or higher alcohol; and (E) an organic solvent. There can be provided a metal oxide-containing film-forming composition in a multi-layer resist process, in a manner that a film made of the composition allows for formation of an excellent pattern of a photoresist film, the composition is capable of forming a metal oxide-containing film as an etching mask having an excellent dry etching resistance, the composition is excellent in storage stability, and the film made of the composition is removable by a solution used in a removal process; a metal oxide-containing film-formed substrate; and a pattern forming process.

摘要翻译： 公开了一种用于形成在用于光刻的多层抗蚀剂工艺中形成的含金属氧化物的膜的含热固性金属氧化物的成膜组合物，所述含热固性金属氧化物的成膜组合物至少包含：（A ）通过水解性硅化合物和可水解金属化合物的水解缩合获得的含金属氧化物的化合物; （B）热交联促进剂; （C）具有1至30个碳原子的一价，二价或更高级的有机酸; （D）三价或更高级醇; 和（E）有机溶剂。 可以在多层抗蚀剂工艺中提供含金属氧化物的成膜组合物，使得由该组合物制成的膜能够形成光致抗蚀剂膜的优异图案，该组合物能够形成 含有金属氧化物的膜作为具有优异的耐干蚀刻性的蚀刻掩模，该组合物具有优异的储存稳定性，并且由组合物制成的膜可通过在去除过程中使用的溶液除去; 含金属氧化物的膜形成基板; 和图案形成处理。

公开(公告)号：US20080290472A1

公开(公告)日：2008-11-27

申请号：US12029562

申请日：2008-02-12

申请人： Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Fujio Yagihashi ,  Yoshitaka Hamada ,  Takeshi Asano ,  Tsutomu Ogihara ,  Motoaki Iwabuchi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： H01L23/58 ,  C08K3/34 ,  C08K3/36 ,  B32B5/18 ,  H01L21/312

CPC分类号： H01L21/31695 ,  C08G77/16 ,  C08G77/70 ,  C08G77/80 ,  C08K3/36 ,  C08L83/04 ,  C09D183/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/7682 ,  H01L2221/1047 ,  Y10T428/249953 ,  C08L83/00

摘要： Provided is a porous-film-forming composition containing silicon-oxide-based fine particles and a polysiloxane compound obtained by hydrolysis and condensation reactions, in the presence of an acid catalyst, of a hydrolyzable silane compound containing at least one tetrafunctional alkoxysilane compound represented by the following formula (1): Si(OR1)4   (1) wherein, R1s may be the same or different and each independently represents a linear or branched C1-4 alkyl group and/or at least one alkoxysilane compound represented by the following formula (2): R2nSi(OR3)4-n   (2) wherein, R2(s) may be the same or different when there are plural R2s and each independently represents a linear or branched C1-8 alkyl group, R3(s) may be the same or different when there are plural R3s and each independently represents a linear or branched C1-4 alkyl group, and n is an integer from 1 to 3 in the reaction mixture containing a large excess of water.

摘要翻译： 本发明提供一种多孔膜形成用组合物，其含有氧化硅系微粒和通过水解缩合反应得到的聚硅氧烷化合物，在酸催化剂的存在下，含有至少一种四官能性烷氧基硅烷化合物的水解性硅烷化合物 以下公式（1）：<？in-line-formula description =“In-line formula”end =“lead”？> Si（OR1）4（1）<？in-line-formula description =“In-line 式中，R 1可以相同或不同，各自独立地表示直链或支链C 1-4烷基和/或由下式（2）表示的至少一种烷氧基硅烷化合物： in-line-formula description =“In-line Formulas”end =“lead”？> R2nSi（OR3）4-n（2）<？in-line-formula description =“In-line Formulas”end =“tail” 其中，当有多个R 2并且各自独立地表示直链或支链的C 1-8烷基时，R 2（s）可以相同或不同，R 3（s）可以相同或不同 当存在多个R 3并且各自独立地表示直链或支链C 1-4烷基时，并且n是含有大量过量水的反应混合物中n是1至3的整数。

公开(公告)号：US20080118737A1

公开(公告)日：2008-05-22

申请号：US11999076

申请日：2007-12-04

申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： B32B5/18 ,  B05D5/00 ,  C08J9/22

CPC分类号： H01L23/5222 ,  C08K3/34 ,  C08L83/02 ,  C09D183/04 ,  H01L23/53228 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/249953 ,  Y10T428/31663 ,  H01L2924/00

摘要： The present invention provides a composition for film formation which can form a porous film that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that is easily thinned; a porous film and a method for forming the same, and a high-performing and highly reliable semiconductor device which contains the porous film inside. More specifically, the composition for forming a porous film comprises a solution containing an amorphous polymer which is obtained by hydrolyzing and condensing at least one silane compound expressed by the general formula (R1)nSi(OR2)4-n, and a zeolite sol which is formed by using a quaternary ammonium hydroxide. The method for forming a porous film comprises a coating step for coating the composition for forming a porous film; a subsequent drying step; and a porousness forming step.

摘要翻译： 本发明提供一种成膜用组合物，其可以形成介电性，粘合性，膜一致性和机械强度优异的多孔膜，容易变薄; 多孔膜及其形成方法，以及内部含有多孔膜的高性能和高可靠性的半导体器件。 更具体地，用于形成多孔膜的组合物包括含有无定形聚合物的溶液，其通过水解和缩合由通式（R 1）2表示的至少一种硅烷化合物而获得， （OR 2）4-n N，以及通过使用氢氧化季铵形成的沸石溶胶。 形成多孔膜的方法包括用于涂覆用于形成多孔膜的组合物的涂布步骤; 随后的干燥步骤; 和多孔性形成步骤。

公开(公告)号：US07244657B2

公开(公告)日：2007-07-17

申请号：US10703854

申请日：2003-11-07

申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： H01L21/76 ,  C23C16/00

CPC分类号： H01L21/02126 ,  C01B39/04 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

摘要： The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that can be easily thinned; a composition for film formation; a porous film and a method for forming the same; and a high-performing and highly reliable semiconductor device which contains this porous film inside. More specifically, the zeolite sol is prepared by hydrolyzing and decomposing a silane compound expressed by a general formula: Si(OR1)4 (wherein R1 represents a straight-chain or branched alkyl group having 1 to 4 carbons, and when there is more than one R1, the R1s can be independent and the same as or different from each other) in a conventional coating solution for forming a porous film in the presence of a structure-directing agent and a basic catalyst; and then by heating the silane compound at a temperature of 75° C. or lower. A composition for forming a porous film which contains this zeolite sol is used.

公开(公告)号：US20070108593A1

公开(公告)日：2007-05-17

申请号：US11652297

申请日：2007-01-11

申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： C23C16/00 ,  C07C5/25 ,  H01L23/12

CPC分类号： H01L21/02126 ,  C01B39/04 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

摘要： The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that can be easily thinned; a composition for film formation; a porous film and a method for forming the same; and a high-performing and highly reliable semiconductor device which contains this porous film inside. More specifically, the zeolite sol is prepared by hydrolyzing and decomposing a silane compound expressed by a general formula: Si(OR1)4 (wherein R1 represents a straight-chain or branched alkyl group having 1 to 4 carbons, and when there is more than one R1, the R1s can be independent and the same as or different from each other) in a conventional coating solution for forming a porous film in the presence of a structure-directing agent and a basic catalyst; and then by heating the silane compound at a temperature of 75° C. or lower. A composition for forming a porous film which contains this zeolite sol is used.

摘要翻译： 本发明提供一种沸石溶胶，其可以通过通常的半导体工艺中使用的方法来形成多孔膜，该多孔膜可以被薄化到预期的厚度，其具有优异的介电性能，粘附性，膜稠度和机械强度，并且可以 容易变薄; 用于成膜的组合物; 多孔膜及其形成方法; 以及内部含有该多孔膜的高性能，高可靠性的半导体装置。 更具体地说，通过水解和分解由以下通式表示的硅烷化合物制备沸石溶胶：Si（OR 1）4（其中R 1， SUP>表示具有1至4个碳的直链或支链烷基，当存在多于一个R 1时，R 1可以是独立的，并且 在结构导向剂和碱性催化剂的存在下在用于形成多孔膜的常规涂布溶液中相同或不同） 然后在75℃以下的温度下加热硅烷化合物。 使用含有该沸石溶胶的多孔膜形成用组合物。

公开(公告)号：US07176103B2

公开(公告)日：2007-02-13

申请号：US10703854

申请日：2003-11-07

申请人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

发明人： Tsutomu Ogihara ,  Fujio Yagihashi ,  Hideo Nakagawa ,  Masaru Sasago

IPC分类号： H01L21/76 ,  C23C16/00

摘要： The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that can be easily thinned; a composition for film formation; a porous film and a method for forming the same; and a high-performing and highly reliable semiconductor device which contains this porous film inside. More specifically, the zeolite sol is prepared by hydrolyzing and decomposing a silane compound expressed by a general formula: Si(OR1)4 (wherein R1 represents a straight-chain or branched alkyl group having 1 to 4 carbons, and when there is more than one R1, the R1s can be independent and the same as or different from each other) in a conventional coating solution for forming a porous film in the presence of a structure-directing agent and a basic catalyst; and then by heating the silane compound at a temperature of 75° C. or lower. A composition for forming a porous film which contains this zeolite sol is used.

公开(公告)号：US5530407A

公开(公告)日：1996-06-25

申请号：US47279

申请日：1993-04-19

申请人： Hiroshi Yabe ,  Tsutomu Ogihara

发明人： Hiroshi Yabe ,  Tsutomu Ogihara

IPC分类号： G04G3/02 ,  G06F1/14 ,  H03B19/00

CPC分类号： G04G3/02

摘要： A digital trimming circuit is used to produce a stable time reference signal. This type of reference time signal can be used in equipment, such as watches, which have motors and acoustic outputs that interfere with producing the time reference signal. A basic oscillation frequency, which is produced by an oscillator circuit, is frequency divided to form the generic time reference signal. The digital trimming circuit generates a control signal to shorten the period of the time reference signal by predetermined amounts based on correction data. The control signal is in the form of pulses which can be dispersively applied to create substantially equal intervals between pulses during one time period of the time reference time signal. While maintaining the necessary digital trimming amount in one digital trimming time period, an expansion/reduction amount of the time reference signal is suppressed at one digital trimming time instant. Therefore, interference between the digital trimming timing and the predetermined output timing can be avoided.

摘要翻译： 数字微调电路用于产生稳定的时间参考信号。 这种类型的参考时间信号可以用于具有干扰产生时间参考信号的电机和声输出的设备，例如手表。 由振荡器电路产生的基本振荡频率被分频以形成通用时间参考信号。 数字微调电路基于校正数据产生控制信号，以将时间基准信号的周期缩短预定量。 控制信号是脉冲的形式，其可以被分散地施加以在时间基准时间信号的一个时间段期间在脉冲之间产生基本相等的间隔。 在一个数字微调时间段内保持必要的数字微调量的同时，在一个数字微调时刻抑制时间参考信号的扩展/减少量。 因此，可以避免数字微调定时与预定输出定时之间的干扰。

公开(公告)号：US08951917B2

公开(公告)日：2015-02-10

申请号：US13524669

申请日：2012-06-15

申请人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Fujio Yagihashi

发明人： Tsutomu Ogihara ,  Takafumi Ueda ,  Toshiharu Yano ,  Fujio Yagihashi

IPC分类号： C09D183/00 ,  C09D183/06 ,  C08L83/06 ,  H01L21/312 ,  G03F7/075 ,  G03F7/09 ,  C08G77/14 ,  C08G77/18 ,  C08G77/56 ,  C08G77/58

CPC分类号： C09D183/06 ,  C08G77/14 ,  C08G77/18 ,  C08G77/56 ,  C08G77/58 ,  C08L83/06 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/094

摘要： The invention provides a composition for forming a silicon-containing resist underlayer film comprising: (A) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (1) and one or more hydrolysable compound shown by the following general formula (2), and (B) a silicon-containing compound obtained by a hydrolysis-condensation reaction of a mixture containing, at least, one or more hydrolysable silicon compound shown by the following general formula (3) and one or more hydrolysable silicon compound shown by the following general formula (4). There can be provided a composition for forming a resist underlayer film applicable not only to a resist pattern obtained in a negative development but also to a resist pattern obtained in a conventional positive development, and a patterning process using this composition R1m1R2m2R3m3Si(OR)(4-m1-m2-m3)  (1) U(OR4)m4(OR5)m5  (2) R6m6R7m7R8m8Si(OR9)(4-m6-m7-m8)  (3) Si(OR10)4  (4).

摘要翻译： 本发明提供一种用于形成含硅抗蚀剂下层膜的组合物，其包含：（A）通过水解 - 缩合反应获得的含硅化合物，所述含硅化合物含有至少一种或多种可水解的硅化合物， 式（1）和一种或多种下述通式（2）所示的可水解化合物，和（B）通过水解缩合反应获得的含硅化合物，所述含硅化合物含有至少一种或多种可水解硅化合物 由以下通式（3）表示，和一种或多种下述通式（4）表示的可水解硅化合物。 可以提供一种用于形成抗蚀剂下层膜的组合物，其不仅可用于以负显影获得的抗蚀图案，而且可应用于以常规阳极显影获得的抗蚀剂图案，以及使用该组合物R1m1R2m2R3m3Si（OR）（4） -m1-m2-m3）（1）U（OR4）m4（OR5）m5（2）R6m6R7m7R8m8Si（OR9）（4-m6-m7-m8）（3）Si（OR10）4（4）。