公开(公告)号：US20130193471A1

公开(公告)日：2013-08-01

申请号：US13825888

申请日：2011-09-30

申请人： Tatsunori Toyota ,  Tomohiko Shibata

发明人： Tatsunori Toyota ,  Tomohiko Shibata

IPC分类号： H01L33/40

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/382 ,  H01L33/387 ,  H01L2933/0016

摘要： A III nitride semiconductor light emitting device with improved light emission efficiency achieved without significantly increasing forward voltage by achieving both good ohmic contact between an electrode and a semiconductor layer, and sufficient functionality of a reflective electrode layer, and a method for manufacturing the same. The III nitride semiconductor light emitting device has a III nitride semiconductor laminate including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer; an n-side electrode, a p-side electrode; and a composite layer having a reflective electrode portion and a contact portion made of AlxGa1-xN (0≦x≦0.05) on a second surface of the III nitride semiconductor laminate. The second surface is opposite to a first surface on the light extraction side.

摘要翻译： 通过实现电极和半导体层之间的良好的欧姆接触以及反射电极层的足够的功能性，可以实现提高发光效率的III族氮化物半导体发光器件及其显着提高正向电压及其制造方法。 III族氮化物半导体发光器件具有包括n型半导体层，发光层和p型半导体层的III族氮化物半导体层叠体; n侧电极，p侧电极; 以及在III族氮化物半导体层叠体的第二表面上具有反射电极部分和由Al x Ga 1-x N（0 x x 0.05）形成的接触部分的复合层。 第二表面与光提取侧的第一表面相对。

公开(公告)号：US20120199661A1

公开(公告)日：2012-08-09

申请号：US13503121

申请日：2011-03-09

申请人： Junichiro Hara ,  Tomohiko Shibata ,  Hiroyuki Yamashita

发明人： Junichiro Hara ,  Tomohiko Shibata ,  Hiroyuki Yamashita

IPC分类号： F25B41/06

CPC分类号： B60H1/00528 ,  B60H1/00514 ,  B60H1/00521 ,  B60H1/00542 ,  B60H1/0055

摘要： Provided is a vehicle air conditioner which includes a simple water-proofing structure that is capable of preventing flooding of a vehicle cabin from mating surfaces, etc. of expansion-valve covers and top and bottom divided cases of an air conditioning unit (HVAC unit) without employing a water-proofing cover, or the like. In a vehicle air conditioner in which expansion-valve covers that are vertically divided into two parts are provided at an outer surface side of top and bottom divided cases of an air conditioning unit disposed in the vehicle cabin so as to bridge mating surfaces of the cases; an expansion valve can be disposed inside the expansion-valve covers; and, in addition, the interior of the expansion-valve covers communicates with an engine compartment via an opening provided in an toe board.

摘要翻译： 本发明提供一种车辆用空调装置，其具有简单的防水结构，其能够防止车厢的溢流与膨胀阀盖的配合面等，以及空调单元（HVAC单元）的顶部和底部分开的壳体， 而不使用防水盖等。 在设置在车厢内的空调单元的顶部和底部分开的壳体的外表面侧设置有垂直分割成两部分的膨胀阀盖的车辆空调装置，用于桥接壳体的配合面 ; 膨胀阀可以设置在膨胀阀盖的内部; 此外，膨胀阀盖的内部经由设置在趾板上的开口与发动机室连通。

公开(公告)号：US20080179022A1

公开(公告)日：2008-07-31

申请号：US12010625

申请日：2008-01-28

申请人： Hironori Hayashi ,  Tomohiko Shibata ,  Masahiro Ideue

发明人： Hironori Hayashi ,  Tomohiko Shibata ,  Masahiro Ideue

IPC分类号： B60J7/10

CPC分类号： B60R5/047 ,  Y10S160/02

摘要： A tonneau cover unit includes: a tonneau cover that covers a luggage floor which is formed on the rear side within a vehicle; a board that is fitted to an end portion of the tonneau cover, and that is provided with an engaging portion; and a rail along which the engaging portion slides in the longitudinal direction of the vehicle. The rail has a first engaged portion that locks the board at the prescribed position with the board kept substantially parallel to the luggage floor when the engaging portion is engaged in the first engaged portion; and a second engaged portion that locks the board at a prescribed position with the board kept substantially upright at a predetermined angle with respect to the luggage floor when the engaging portion is engaged in the second engaged portion.

摘要翻译： 一种吨位盖单元包括：覆盖形成在车辆的后侧的行李箱地板的吨位盖; 安装在所述吨位盖的端部的板，并且设置有接合部; 以及轨道，所述接合部沿所述轨道沿车辆的纵向方向滑动。 所述轨道具有第一接合部分，当所述接合部分接合在所述第一接合部分中时，所述板将所述板锁定在所述规定位置，所述板保持基本上平行于行李箱地板; 以及第二被卡合部，当接合部接合在第二被卡合部中时，将板保持在规定位置，同时板相对于行李箱基本上保持预定角度。

公开(公告)号：US20060255363A1

公开(公告)日：2006-11-16

申请号：US11417936

申请日：2006-05-04

申请人： Tomohiko Shibata

发明人： Tomohiko Shibata

IPC分类号： H01L31/00

CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B25/18 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647

摘要： An epitaxial substrate used to generate a group III nitride crystal having excellent crystal quality. An upper layer of a group III nitride is formed on a sapphire base with an off angle, and after that a heating process is performed at a temperature not lower than 1500° C., and thereby, the crystal quality of the upper layer is improved and repeating steps of which the size is greater than the height of several atomic layers are provided on the surface of the upper layer. The obtained epitaxial substrate is used as a base substrate for growing a group III nitride crystal layer. The group III nitride crystal grows in a manner of step flow, and therefore, threading dislocations from the upper layer are bent according to this growth, and are unevenly distributed as the crystal grows afterwards.

公开(公告)号：US06865174B1

公开(公告)日：2005-03-08

申请号：US09601886

申请日：1999-12-09

申请人： Kazuo Tsubouchi ,  Kazuya Masu ,  Tomohiko Shibata

发明人： Kazuo Tsubouchi ,  Kazuya Masu ,  Tomohiko Shibata

IPC分类号： H04B1/707 ,  H04B1/7075 ,  H04L7/00 ,  H04B7/216

CPC分类号： H04B1/7075 ,  H04B1/707 ,  H04B1/70712 ,  H04B1/7093

摘要： In a code division multiple communication system which prevents the dropout of a whole packet and does not require the generation of a carrier from a received signal, under bad communication path, by generating an orthogonal code with chip synchronization from a correlation peak of a synchronization code sequence output from a surface acoustic wave matched filter, a preamble division of a spectrum spread signal is composed of plural synchronization burst. Each synchronization burst is composed of a synchronization packet division having the Barker code of 11 chips and a dummy division. The period of one synchronization burst (Tburst) is set equally to the period of one symbol in a data division (Tsymbol) which is modulated by the orthogonal sequential code of 64 chips. When the correlation peak of at least one from among plural synchronization code sequences is detected, the orthogonal code can be generated in accordance with the start timing of the first symbol in the data division.

摘要翻译： 在一个码分多址通信系统中，在不良通信路径下，通过从同步代码的相关峰产生具有码片同步的正交码，防止整个分组的丢弃，并且不需要从接收信号生成载波 来自表面声波匹配滤波器的序列输出，频谱扩展信号的前导码分割由多个同步脉冲串构成。 每个同步脉冲串由具有11个码片的巴克码和虚拟除法的同步分组组成。 一个同步脉冲串（Tburst）的周期被平均地设置在由64个码片的正交顺序码调制的数据分割（Tsymbol）中的一个符号的周期。 当检测到多个同步码序列中的至少一个的相关峰值时，可以根据数据划分中的第一符号的开始定时来生成正交码。

公开(公告)号：US06805982B2

公开(公告)日：2004-10-19

申请号：US10425734

申请日：2003-04-30

申请人： Tomohiko Shibata ,  Keiichiro Asai ,  Shigeaki Sumiya ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Keiichiro Asai ,  Shigeaki Sumiya ,  Mitsuhiro Tanaka

IPC分类号： B32B900

CPC分类号： H01L21/0262 ,  C30B25/02 ,  C30B29/08 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L29/2003 ,  Y10T428/265

摘要： A group III nitride film is formed on an epitaxial substrate having an underlayer film containing Al. According to the present invention, the change of the properties of the II nitride film may be reduced The properties of the semiconductor device may be thus reduced and the production yield may be improved. An underlayer 2 made of a group III nitride containing at least Al is formed on a substrate 1 made of a single crystal. An oxide film 3 is formed on the underlayer film 2 to produce an epitaxial substrate 10. The oxygen content of the oxide film 3 at the surface is not lower than 3 atomic percent and the thickness is not larger than 50 angstrom.

摘要翻译： 在具有含有Al的下层膜的外延基板上形成III族氮化物膜。 根据本发明，可以降低II族氮化物膜的性能的变化。因此，可以降低半导体器件的性能，并且可以提高生产成品率。 在由单晶构成的基板1上形成由至少含有Al的III族氮化物构成的底层2。 在下层膜2上形成氧化膜3，制作外延衬底10.表面氧化膜3的氧含量不低于3原子％，厚度不大于50埃。

公开(公告)号：US06765244B2

公开(公告)日：2004-07-20

申请号：US10156595

申请日：2002-05-28

申请人： Tomohiko Shibata ,  Shigeaki Sumiya ,  Keiichiro Asai ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Shigeaki Sumiya ,  Keiichiro Asai ,  Mitsuhiro Tanaka

IPC分类号： H01L310328

CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L31/1852 ,  H01L33/32 ,  Y02E10/544

摘要： A III nitride multilayer including a given substrate, a III nitride underfilm including an Al content of 50 atomic percent or more for all of the III elements present in the III nitride underfilm, and a III nitride film including a lower Al content than the Al content of the III nitride underfilm by 10 atomic percent or more. A full width at half maximum X-ray rocking curve value of the III nitride film is set to 800 seconds or below at the (100) plane. A full width at half maximum X-ray rocking curve value of the III nitride film is set to 200 seconds or below at the (002) plane.

摘要翻译： 包含给定衬底的III族氮化物层，包含III族氮化物底膜中存在的所有III族元素的Al含量为50原子％以上的III族氮化物底膜，以及包含比Al含量低的Al含量的III族氮化物膜 的III族氮化物底膜减少10原子％以上。 III型氮化物膜的半高X射线摇摆曲线的全宽在（100）平面处设定为800秒以下。 III族氮化物膜的半高X射线摇摆曲线值的全宽在（002）面设定为200秒以下。

公开(公告)号：US06749957B2

公开(公告)日：2004-06-15

申请号：US10321658

申请日：2002-12-18

申请人： Tomohiko Shibata ,  Shigeaki Sumiya ,  Mitsuhiro Tanaka

发明人： Tomohiko Shibata ,  Shigeaki Sumiya ,  Mitsuhiro Tanaka

IPC分类号： B32B904

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/0075 ,  Y10T428/265

摘要： An acicular structure is formed of AlN on the main surface of a base made of single crystal. Then, a desired Al-including III nitride film is formed on the main surface of the base via the acicular structure.

摘要翻译： 针状结构由单晶基体的主表面上的AlN形成。 然后，通过针状结构在基体的主表面上形成所需的Al-III族氮化物膜。

公开(公告)号：US06727164B2

公开(公告)日：2004-04-27

申请号：US10060802

申请日：2002-01-30

申请人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka ,  Keiichiro Asai

发明人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka ,  Keiichiro Asai

IPC分类号： H01L2120

CPC分类号： C23C16/4401 ,  C23C16/4583

摘要： In fabricating a semiconducting nitride film by a MOCVD method, a susceptor tray is employed. The susceptor tray is constructed of a base plate and an outer member detachable from the base plate. A substrate for the film to be formed upon is set in a recessed portion formed by disposing the outer member on the base plate.

摘要翻译： 在通过MOCVD方法制造半导体氮化物膜时，使用基座托盘。 基座托盘由基板和可脱离基板的外部构件构成。 将要形成的膜的基底设置在通过将外部构件设置在基板上而形成的凹部中。

公开(公告)号：US06693302B2

公开(公告)日：2004-02-17

申请号：US10035001

申请日：2001-12-28

申请人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

发明人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

IPC分类号： H01L2715

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/12

摘要： In a semiconductor light-emitting element, an underlayer is made of a high crystallinity Al-including semiconducting nitride material of which the FWHM is 90 seconds or below in full width at half maximum of an X-ray rocking curve. A light-emitting layer is made of a semiconducting nitride material including it least one element selected from the group consisting of Al, Ga and In and containing at least one element selected from rare earth metal elements. The light-emitting layer can be omitted if at least one element selected from rare earth metal elements is incorporated in the underlayer.

摘要翻译： 在半导体发光元件中，底层由X射线摇摆曲线的半高宽度的FWHM为90秒以下的高结晶性Al的半导体氮化物材料构成。 发光层由包含选自Al，Ga和In中的至少一种元素的半导体氮化物材料制成，并且含有选自稀土金属元素中的至少一种元素。 如果从稀土金属元素中选择至少一种元素并入底层中，则可以省略发光层。