公开(公告)号：US08772055B1

公开(公告)日：2014-07-08

申请号：US13796169

申请日：2013-03-12

申请人： Joseph M. Ranish ,  Paul Brillhart ,  Jose Antonio Marin ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Swaminathan T. Srinivasan ,  Mehmet Tugrul Samir

发明人： Joseph M. Ranish ,  Paul Brillhart ,  Jose Antonio Marin ,  Satheesh Kuppurao ,  Balasubramanian Ramachandran ,  Swaminathan T. Srinivasan ,  Mehmet Tugrul Samir

IPC分类号： H01L21/00 ,  B05C11/00 ,  H05B6/66

CPC分类号： C30B25/105 ,  C23C16/4583 ,  C23C16/481 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/14 ,  C30B25/16 ,  G01J5/0007 ,  G01J5/10 ,  G01J2005/106 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67248 ,  H01L22/10 ,  H01L22/20

摘要： A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.

摘要翻译： 描述了一种用于处理半导体衬底的方法和设备。 该装置是具有光学透明的上部圆顶和下部圆顶的处理室。 在处理过程中真空保持在处理室中。 通过使热控制流体沿着加工区域外的上部圆顶流动来对上部圆顶进行热控制。 散热灯靠近下穹顶定位，热传感器设置在灯之间。 灯具已通电，并且控制器根据从热传感器接收的数据调节灯区的电源。

公开(公告)号：US20140073145A1

公开(公告)日：2014-03-13

申请号：US13774741

申请日：2013-02-22

申请人： Stephen Moffatt ,  Joseph M. Ranish

发明人： Stephen Moffatt ,  Joseph M. Ranish

IPC分类号： H01L21/324 ,  H01L21/67 ,  B23K26/00 ,  H01L21/268

CPC分类号： H01L21/324 ,  B23K26/0626 ,  B23K26/352 ,  B23K2101/40 ,  H01L21/02667 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/268 ,  H01L21/2686 ,  H01L21/67115 ,  H01L29/66575

摘要： The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are delivered to a substrate using a flash lamp or laser apparatus. The pulses may be from about 1 nsec to about 10 msec long, and each pulse has less energy than that required to melt the substrate material. The interval between pulses is generally long enough to allow the energy imparted by each pulse to dissipate completely. Thus, each pulse completes a micro-anneal cycle. The pulses may be delivered to the entire substrate at once, or to portions of the substrate at a time. Further embodiments provide an apparatus for powering a radiation assembly, and apparatuses for detecting the effect of pulses on a substrate.

摘要翻译： 本发明总体上描述了用于对衬底的期望区域进行退火处理的设备和方法。 在一个实施例中，使用闪光灯或激光装置将电磁能量的脉冲传送到基板。 脉冲可以是约1nsec至约10msec长，并且每个脉冲具有比熔化基底材料所需的能量更少的能量。 脉冲之间的间隔通常足够长以允许由每个脉冲施加的能量完全消散。 因此，每个脉冲完成微退火循环。 脉冲可以一次被输送到整个基板，或者一次被传送到基板的一部分。 另外的实施例提供了用于为辐射组件供电的装置，以及用于检测脉冲在衬底上的影响的装置。

公开(公告)号：US08490660B2

公开(公告)日：2013-07-23

申请号：US13294709

申请日：2011-11-11

申请人： Blake Koelmel ,  Alexander N. Lerner ,  Joseph M. Ranish ,  Kedarnath Sangam ,  Khurshed Sorabji

发明人： Blake Koelmel ,  Alexander N. Lerner ,  Joseph M. Ranish ,  Kedarnath Sangam ,  Khurshed Sorabji

IPC分类号： B65B31/04

CPC分类号： H01L21/6838 ,  H01L21/67115

摘要： An apparatus and method for supporting, positioning and rotating a substrate are provided. In one embodiment, a support assembly for supporting a substrate includes an upper base plate and a lower base plate. The substrate is floated on a thin layer of air over the upper base plate. A positioning assembly includes a plurality of air bearing edge rollers or air flow pockets used to position the substrate in a desired orientation inside above the upper base plate. A plurality of slanted apertures or air flow pockets are configured in the upper base plate for flowing gas therethrough to rotate the substrate to ensure uniform heating during processing.

摘要翻译： 提供了用于支撑，定位和旋转衬底的装置和方法。 在一个实施例中，用于支撑衬底的支撑组件包括上基板和下基板。 衬底浮在上层底板上的薄层空气上。 定位组件包括多个空气轴承边缘辊或气流袋，其用于将衬底定位在上部基板的上方所期望的取向。 多个倾斜的孔或气流袋被配置在上基板中，用于使气体流过其中以旋转基板以确保在加工期间的均匀加热。

公开(公告)号：US20130058636A1

公开(公告)日：2013-03-07

申请号：US13402106

申请日：2012-02-22

申请人： Blake Koelmel ,  Joseph M. Ranish ,  Abhilash J. Mayur

发明人： Blake Koelmel ,  Joseph M. Ranish ,  Abhilash J. Mayur

IPC分类号： F27D11/00 ,  F27D5/00

CPC分类号： H01L21/67346 ,  F27D5/0037 ,  F27D11/12 ,  F27D2005/0081 ,  H01L21/67115 ,  H01L21/68735

摘要： Embodiments of the present invention provide an edge ring for supporting a substrate with increased temperature uniformity. More particularly, embodiments of the present invention provide an edge ring having one or more fins formed on an energy receiving surface of the edge ring. The fins may have at least one sloped side relative to a main body of the edge ring.

摘要翻译： 本发明的实施例提供一种用于支撑具有增加的温度均匀性的基板的边缘环。 更具体地，本发明的实施例提供了一种边缘环，其具有形成在边缘环的能量接收表面上的一个或多个翅片。 翅片可以相对于边缘环的主体具有至少一个倾斜侧面。

公开(公告)号：US08387557B2

公开(公告)日：2013-03-05

申请号：US12578290

申请日：2009-10-13

申请人： Kaushal K. Singh ,  Joseph M. Ranish

发明人： Kaushal K. Singh ,  Joseph M. Ranish

IPC分类号： C23C16/00

CPC分类号： C23C16/308 ,  C23C16/0227 ,  C23C16/345 ,  C23C16/45519 ,  C23C16/45591 ,  C23C16/482 ,  C23C16/488 ,  C23C16/52 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02277 ,  H01L21/02301 ,  H01L21/0231 ,  H01L21/02348 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/3121 ,  H01L21/3143 ,  H01L21/31612 ,  H01L21/3185

摘要： Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrystalline, polysilicon, or amorphous), silicon oxide, silicon nitride, silicon oxynitride, or other silicon-containing materials. The photoexcitation process may expose the substrate and/or gases to an energy beam or flux prior to, during, or subsequent a deposition process. Therefore, the photoexcitation process may be used to pre-treat or post-treat the substrate or material, to deposit the silicon-containing material, and to enhance chamber cleaning processes. Attributes of the method that are enhanced by the UV photoexcitation process include removing native oxides prior to deposition, removing volatiles from deposited films, increasing surface energy of the deposited films, increasing the excitation energy of precursors, reducing deposition time, and reducing deposition temperature.

摘要翻译： 本发明的实施方案通常提供一种在光激发过程中使用UV源沉积膜或层的方法。 膜沉积在基底上，通常包含诸如硅（例如外延，晶体，微晶，多晶硅或非晶），氧化硅，氮化硅，氮氧化硅或其它含硅材料的材料。 光致激化过程可以在沉积过程之前，期间或之后使衬底和/或气体暴露于能量束或通量。 因此，光激发过程可以用于预处理或后处理衬底或材料，沉积含硅材料，并且增强室清洁过程。 通过UV光激发过程增强的方法的特征包括在沉积之前去除原生氧化物，从沉积膜去除挥发物，增加沉积膜的表面能，增加前体的激发能，减少沉积时间和降低沉积温度。

公开(公告)号：US20120309115A1

公开(公告)日：2012-12-06

申请号：US13152157

申请日：2011-06-02

申请人： BLAKE KOELMEL ,  Joseph M. Ranish

发明人： BLAKE KOELMEL ,  Joseph M. Ranish

IPC分类号： H01L21/66 ,  A47B81/00

CPC分类号： H01L21/67109 ,  H01L21/6838

摘要： Embodiments of the present invention provide apparatus and methods for supporting and controlling a substrate during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus includes a chamber body defining an inner volume, a substrate support disposed in the inner volume, and an auxiliary force assembly configured to apply an auxiliary force to the substrate. Another embodiment provides a gas delivery assembly configured to adjust a thermal mass of a fluid flow delivered to position, control and/or rotate a substrate.

摘要翻译： 本发明的实施例提供了用于在热处理期间支撑和控制基板的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置。 该装置包括限定内部容积的室主体，设置在内部容积中的基板支撑件以及被配置成向基板施加辅助力的辅助力组件。 另一个实施例提供一种气体输送组件，其构造成调节输送到位置的流体流的热质量，控制和/或旋转基底。

公开(公告)号：US20120304928A1

公开(公告)日：2012-12-06

申请号：US13152154

申请日：2011-06-02

申请人： BLAKE KOELMEL ,  Joseph M. Ranish ,  Errol C. Sanchez

发明人： BLAKE KOELMEL ,  Joseph M. Ranish ,  Errol C. Sanchez

IPC分类号： C23C16/458 ,  C23C16/52

CPC分类号： H01L21/68 ,  H01L21/67115 ,  H01L21/67259

摘要： Embodiments of the present invention provide apparatus and methods for positioning a substrate in a processing chamber using capacitive sensors. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus includes first and second capacitive sensors disposed in an inner volume. The first capacitive sensor is positioned to detect a location of an edge of the substrate at a first angular location. The second capacitive sensor is positioned to detect a vertical position of the substrate.

摘要翻译： 本发明的实施例提供了使用电容式传感器将衬底定位在处理室中的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置。 该装置包括设置在内部容积中的第一和第二电容传感器。 第一电容传感器被定位成在第一角度位置处检测衬底的边缘的位置。 第二电容传感器被定位成检测基板的垂直位置。

公开(公告)号：US08294068B2

公开(公告)日：2012-10-23

申请号：US12207711

申请日：2008-09-10

申请人： Joseph M. Ranish ,  Khurshed Sorabji ,  Kedarnath Sangam ,  Alexander Lerner

发明人： Joseph M. Ranish ,  Khurshed Sorabji ,  Kedarnath Sangam ,  Alexander Lerner

IPC分类号： A21B1/22 ,  F26B19/00

CPC分类号： F27B17/0025 ,  F27D5/0037 ,  F27D21/0014 ,  H01L21/67109 ,  H01L21/67115

摘要： Embodiments of a lamphead and apparatus utilizing same are provided herein. In some embodiments, a lamphead for use in thermal processing may include a monolithic member having a plurality of coolant passages and a plurality of lamp passages and reflector cavities, wherein each lamp passage is configured to accommodate a lamp and each reflector cavity is shaped to act as a reflector or to receive a replaceable reflector for the lamp, and wherein the plurality of coolant passages are disposed proximate to the plurality of lamp passages; and at least one heat transfer member extending from the monolithic member into each coolant passage. In some embodiments, the lamphead may be disposed in an apparatus comprising a process chamber having a substrate support, wherein the lamphead is positioned to provide energy to the substrate support.

摘要翻译： 本发明提供了一种灯头及其使用装置的实施例。 在一些实施例中，用于热处理的灯头可以包括具有多个冷却剂通道和多个灯通道和反射器腔的整体构件，其中每个灯通道被配置成容纳灯，并且每个反射器空腔成形为能够起作用 作为反射器或接收用于灯的可更换反射器，并且其中所述多个冷却剂通道设置成靠近所述多个灯通道; 以及至少一个传热构件，其从所述整体构件延伸到每个冷却剂通道中。 在一些实施例中，灯头可以设置在包括具有基板支撑件的处理室的设备中，其中灯头被定位成向基板支撑件提供能量。

公开(公告)号：US08057602B2

公开(公告)日：2011-11-15

申请号：US12017293

申请日：2008-01-21

申请人： Blake Koelmel ,  Alexander N. Lerner ,  Joseph M. Ranish ,  Kedarnath Sangam ,  Khurshed Sorabji

发明人： Blake Koelmel ,  Alexander N. Lerner ,  Joseph M. Ranish ,  Kedarnath Sangam ,  Khurshed Sorabji

IPC分类号： C23C16/00

CPC分类号： H01L21/67115 ,  H01L21/6838 ,  H01L21/68742 ,  H01L21/68785 ,  H01L21/68792

摘要： Embodiments of the invention contemplate a method, apparatus and system that are used to support, position, and rotate a substrate during processing. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein remove the need for complex, costly and often unreliable components that would be required to accurately position and rotate a substrate during one or more processing steps, such as an rapid thermal processing (RTP) process, a chemical vapor deposition (CVD) process, a physical vapor deposition (PVD) process, atomic layer deposition (ALD) process, dry etching process, wet clean, and/or laser annealing process.

摘要翻译： 本发明的实施例考虑了一种用于在处理期间支撑，定位和旋转衬底的方法，装置和系统。 本发明的实施例还可以包括控制位于处理室中的衬底和衬底支撑件之间的热传递的方法。 本文描述的装置和方法消除了在一个或多个处理步骤（例如快速热处理（RTP）处理，化学气相沉积）中精确定位和旋转衬底所需的复杂，昂贵且经常不可靠的部件的需要 （CVD）工艺，物理气相沉积（PVD）工艺，原子层沉积（ALD）工艺，干蚀刻工艺，湿法清洁和/或激光退火工艺。

公开(公告)号：US07906402B2

公开(公告)日：2011-03-15

申请号：US12573139

申请日：2009-10-04

申请人： Joseph M. Ranish ,  Bruce E. Adams

发明人： Joseph M. Ranish ,  Bruce E. Adams

IPC分类号： H01L21/336 ,  H01L21/331 ,  H01L21/00

CPC分类号： C23C16/46 ,  C21D1/34

摘要： Methods for compensating for a thermal profile in a substrate heating process are provided herein. In some embodiments, a method of processing a substrate includes determining an initial thermal profile of a substrate that would result from subjecting the substrate to a process; determining a compensatory thermal profile based upon the initial thermal profile and a desired thermal profile; imposing the compensatory thermal profile on the substrate prior to performing the process on the substrate; and performing the process to create the desired thermal profile on the substrate. The initial substrate thermal profile can also be compensated for by adjusting a local mass heated per unit area, a local heat capacity per unit area, or an absorptivity or reflectivity of a component proximate the substrate prior to performing the process. Heat provided by an edge ring to the substrate may be controlled prior to or during the substrate heating process.

摘要翻译： 本文提供了补偿基板加热过程中的热分布的方法。 在一些实施例中，处理衬底的方法包括确定由衬底经受过程而导致的衬底的初始热分布; 基于初始热分布和期望的热分布确定补偿热分布; 在对衬底进行处理之前在衬底上施加补偿热分布; 并执行该过程以在衬底上产生所需的热分布。 也可以通过调整在每单位面积加热的局部质量，每单位面积的局部热容量，或者在执行该过程之前靠近该衬底的部件的吸收性或反射率来补偿初始衬底热分布。 由边缘环向衬底提供的热量可以在衬底加热过程之前或期间被控制。