摘要:
The present invention provides an apparatus and a method of fabricating the apparatus. The apparatus comprises a substrate having a planar surface and first and second electrodes located on the planar surface. The first electrode has a top surface and a lateral surface, and the lateral surface has an edge near or in contact with the substrate. An electrode insulating layer is located on the top surface and a self-assembled layer located on the lateral surface. The second electrode is in contact with both the self-assembled layer and the electrode insulating layer.
摘要:
Semiconductor apparatus comprising a substrate having a substrate surface; a first dielectric layer comprising molecules of a first compound, the molecules of the first compound having first ends and second ends, the first ends being covalently bonded to a first region of the substrate surface, the second ends having aromatic regions; and a polycrystalline semiconductor layer comprising organic semiconductor molecules with aromatic portions, the polycrystalline semiconductor layer being on the first region of the substrate. Integrated circuits comprising apparatus, and methods for making apparatus and integrated circuits.
摘要:
A method for making an IC on a surface of a planar substrate includes forming a continuous first layer on the surface of the substrate and pressing a surface of a stamp into the first layer to produce a pattern of non-intersecting smooth regions on the surface. A rough region of the surface of the first layer laterally borders and laterally surrounds each smooth region of the surface of the first layer. The pattern of smooth and rough regions on the surface of the first layer copies a pattern of smooth and rough areas on the surface of the stamp. The method also includes forming a continuous second layer on the patterned first layer. The first layer is one of a dielectric layer and an organic semiconductor layer, and the second layer is the other of a dielectric layer and an organic semiconductor layer.
摘要:
Semiconductor apparatus comprising a substrate having a substrate surface; a first dielectric layer comprising molecules of a first compound, the molecules of the first compound having first ends and second ends, the first ends being covalently bonded to a first region of the substrate surface, the second ends having aromatic regions; and a polycrystalline semiconductor layer comprising organic semiconductor molecules with aromatic portions, the polycrystalline semiconductor layer being on the first region of the substrate. Integrated circuits comprising apparatus, and methods for making apparatus and integrated circuits.
摘要:
An organic field effect transistor (FET) is described with an active dielectric layer comprising a low-temperature cured dielectric film of a liquid-deposited silsesquioxane precursor. The dielectric film comprises a silsesquioxane having a dielectric constant of greater than 2. The silsesquioxane dielectric film is advantageously prepared by curing oligomers having alkyl(methyl) and/or alkyl(methyl) pendant groups. The invention also embraces a process for making an organic FET comprising providing a substrate suitable for an organic FET; applying a liquid-phase solution of silsesquioxane precursors over the surface of the substrate; and curing the solution to form a silsesquioxane active dielectric layer. The organic FET thus produced has a high-dielectric, silsesquioxane film with a dielectric constant of greater than about 2, and advantageously, the substrate comprises an indium-tin oxide coated plastic substrate.
摘要:
Apparatus comprising: a first substrate; a dielectric layer comprising a first dielectric material on the first substrate, the dielectric layer having a dielectric layer thickness and being traversed by through holes passing from an interface with the first substrate, to an opposite side of the dielectric layer; and a second dielectric material at least partially blocking the through holes. Methods for making such apparatus.
摘要:
The specification describes a pattern transfer technique for forming patterns of thin films of high resolution over large areas. It involves forming a pattern layer on a transfer substrate, patterning the pattern layer while on the transfer substrate, then contacting the transfer substrate with the receiving substrate. The surface of the receiving substrate is treated to activate the surface thereby improving adhesion of the transfer pattern to the receiving substrate. The activation treatment involves forming a layer of metal particles on the surface of the receiving substrate. The pattern layer is preferably of the same metal, or a similar metal or alloy, and is transferred from the transfer substrate to the receiving substrate by metallurgical bonding. The method of the invention is particularly useful for printing metal conductor patterns (metalization), and device features, on flexible polymer substrates in, for example, thin film transistor (TFT) technology.
摘要:
An optically controlled switch includes first and second electrodes, a channel extending between the electrodes, and a light source positioned to illuminate the channel. The light source produces a wavelength capable of changing the material's conductivity. The channel includes a photosensitive organic material and is configured to operate as a light controlled switch.
摘要:
The invention relates to poly(phenylene vinylene) polymers substituted with dendritic sidechains to enhance main-chain separation in the solid state. The polymers are synthesized by the Heck polymerization and have a weight-average molecular weight of 20,000 to 60,000 Daltons. The polymers are self-ordering in the solid state and have thermotropic liquid crystalline phases. The polymers show enhanced photoconductivity, better charge transport capability and improved polarized light emission.
摘要:
The invention relates to poly(phenylene vinylene) polymers substituted with dendritic sidechains to enhance main-chain separation in the solid state. The polymers are synthesized by the Heck polymerization and have a weight-average molecular weight of 20,000 to 60,000 Daltons. The polymers are self-ordering in the solid state and have thermotropic liquid crystalline phases. The polymers show enhanced photoconductivity, better charge transport capability and improved polarized light emission.