公开(公告)号：US4435485A

公开(公告)日：1984-03-06

申请号：US295306

申请日：1981-08-24

申请人： Kaoru Nakajima ,  Masashi Somezawa ,  Minoru Takamizawa ,  Yoshio Inoue ,  Hiroshi Yoshioka

发明人： Kaoru Nakajima ,  Masashi Somezawa ,  Minoru Takamizawa ,  Yoshio Inoue ,  Hiroshi Yoshioka

IPC分类号： C08F2/00 ,  C08F2/46 ,  C08F2/48 ,  C08F2/54 ,  C08L33/00 ,  C08L33/04 ,  C09D4/00 ,  C09D5/23 ,  C09D175/14 ,  G11B5/702 ,  H01F10/02

CPC分类号： G11B5/7026 ,  G11B5/7023 ,  Y10S428/90 ,  Y10T428/31786

摘要： The magnetic recording medium contains the magnetic layer comprising the magnetic or magnetizable powders or particles and the binder comprising a composition containing(A) a compound represented by formula (V): ##STR1## (wherein R is methyl or ethyl group and X is a group containing an acrylic or methacrylic double bond; i is a number in the range of approximately 200 to 800, j is a number in the range of approximately 10 to 200, k is a number in the range up to approximately 200, and l is a number in the range of approximately 3 to 100, provided that the division of l by the sum of k and l is in the range from approximately 0.2 to 1.0)and(B) a compound having at least two acrylic and/or methacrylic double bonds in the molecule thereof and having a molecular weight ranging from approximately 1,000 to 6,000 in which the molecular weight in the molecule per one double bond is in the range from approximately 80 to 3,000.The composition is cured by the irradiation of radiation so that the magnetic recording medium has an improved durability as well as physical strengths in the magnetic layer thereon.

摘要翻译： 磁记录介质含有包含磁性或可磁化粉末或颗粒的磁性层，粘合剂包括含有（A）由式（V）表示的化合物的组合物：其中R是甲基或乙基，X是 基团为丙烯酸或甲基丙烯酸双键; i为约200〜800范围内的数，j为约10〜200的数，k为约200以下的数，l为 大约3至100范围内的数字，条件是除以k和l的总和除以约0.2至1.0）和（B）具有至少两个丙烯酸和/或甲基丙烯酸双酯的化合物 分子中的键，其分子量范围为约1,000至6,000，其中每个双键的分子中的分子量在约80至3,000的范围内。 组合物通过辐射照射而固化，使得磁记录介质在其上的磁性层中具有改善的耐久性以及物理强度。

公开(公告)号：US08001721B2

公开(公告)日：2011-08-23

申请号：US12376748

申请日：2007-09-10

申请人： Akihiro Okamoto ,  Manabu Fujii ,  Hiroshi Yoshioka ,  Yuichi Mori

发明人： Akihiro Okamoto ,  Manabu Fujii ,  Hiroshi Yoshioka ,  Yuichi Mori

IPC分类号： A01G13/02 ,  A01G27/02

CPC分类号： A01G31/02 ,  Y02P60/216

摘要： To provide a system for producing safe and high nutrition vegetables at low cost.A plant cultivation system for cultivating a plant on a nonporous hydrophilic film, which comprises a nonporous hydrophilic film and a feeding means for supplying water or a nutrient fluid to the lower surface of the film in the absence of a hydroponic tank for accommodating water or a nutrient fluid and cultivating a plant therein. As the feeding means, use is made of a water absorbing material which is in contact with the film and which is disposed between the film and a water impermeable material. A system for producing safe and high nutrition vegetables at low cost can be obtained by disposing the water impermeable material directly on ground soil, whereupon the water absorbing material and an irrigation tube are disposed, followed by disposing the film thereon.

摘要翻译： 提供低成本生产安全，高营养蔬菜的制度。 一种用于在无孔亲水膜上培养植物的植物栽培系统，其包括无孔亲水膜和用于在不存在用于容纳水的水槽的情况下向膜的下表面供应水或营养液的进料装置 营养液和培养其中的植物。 作为供给装置，使用与膜接触并且设置在膜和不透水材料之间的吸水材料。 通过将不透水材料直接放置在地面土壤上，由此设置吸水材料和灌溉管，然后在其上设置薄膜，可以获得低成本生产安全和高营养蔬菜的系统。

公开(公告)号：US07345929B2

公开(公告)日：2008-03-18

申请号：US11714867

申请日：2007-03-07

申请人： Kazuhiko Kajigaya ,  Kazuyuki Miyazawa ,  Manabu Tsunozaki ,  Kazuyoshi Oshima ,  Takashi Yamazaki ,  Yuji Sakai ,  Jiro Sawada ,  Yasunori Yamaguchi ,  Tetsurou Matsumoto ,  Shinji Udo ,  Hiroshi Yoshioka ,  Hirokazu Saito ,  Mitsuhiro Takano ,  Makoto Morino ,  Sinichi Miyatake ,  Eiji Miyamoto ,  Yasuhiro Kasama ,  Akira Endo ,  Ryoichi Hori ,  Jun Etoh ,  Masashi Horiguchi ,  Shinichi Ikenaga ,  Atsushi Kumata

发明人： Kazuhiko Kajigaya ,  Kazuyuki Miyazawa ,  Manabu Tsunozaki ,  Kazuyoshi Oshima ,  Takashi Yamazaki ,  Yuji Sakai ,  Jiro Sawada ,  Yasunori Yamaguchi ,  Tetsurou Matsumoto ,  Shinji Udo ,  Hiroshi Yoshioka ,  Hirokazu Saito ,  Mitsuhiro Takano ,  Makoto Morino ,  Sinichi Miyatake ,  Eiji Miyamoto ,  Yasuhiro Kasama ,  Akira Endo ,  Ryoichi Hori ,  Jun Etoh ,  Masashi Horiguchi ,  Shinichi Ikenaga ,  Atsushi Kumata

IPC分类号： G11C7/10

CPC分类号： H01L24/06 ,  G11C5/025 ,  G11C5/04 ,  G11C5/063 ,  G11C11/406 ,  G11C29/06 ,  G11C29/12005 ,  G11C29/12015 ,  G11C29/24 ,  G11C29/34 ,  G11C29/50 ,  G11C29/50012 ,  G11C29/70 ,  G11C29/80 ,  G11C29/804 ,  G11C29/832 ,  G11C29/844 ,  G11C2029/2602 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/10897 ,  H01L27/11898 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/73215 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01037 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01043 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01054 ,  H01L2924/01055 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01084 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays.

公开(公告)号：US07313487B2

公开(公告)日：2007-12-25

申请号：US10557425

申请日：2005-02-10

申请人： Hiroshi Yoshioka ,  Tateki Mitani

发明人： Hiroshi Yoshioka ,  Tateki Mitani

IPC分类号： G01L7/00

CPC分类号： F02M25/0809

摘要： A leak detecting system for a transpiration purge system including a fuel tank 1 and a canister 13 includes a jet pump 8, which leads the atmosphere into the fuel tank 1 using a return flow of excess fuel of fuel pumped to an internal combustion engine, internal pressure measuring means 15, and fuel volume detecting means 18. After intaking air via pressurizing means for a predetermined time, the leak detecting system judges that a leak is present when a holding pressure measurement value in a state in which the transpiration purge system is closed is lower than a decompression calculation value calculated from a pressurization measurement value, an air volume, and a leak hole diameter.

摘要翻译： 用于包括燃料箱1和罐13的蒸腾吹扫系统的泄漏检测系统包括喷射泵8，该喷射泵8使用泵送到内燃机的多余燃料的回流将内部空气引导到燃料箱1内部 压力测量装置15和燃料量检测装置18。 在通过加压装置通入预定时间后，当蒸发吹扫系统关闭的状态下的保持压力测量值低于从加压测量计算出的减压计算值时，泄漏检测系统判断存在泄漏 值，空气量和泄漏孔直径。

公开(公告)号：US20070269320A1

公开(公告)日：2007-11-22

申请号：US11793692

申请日：2005-10-24

申请人： Hiroshi Yoshioka

发明人： Hiroshi Yoshioka

IPC分类号： F04B49/24

CPC分类号： F02M37/10 ,  F02D33/006 ,  F02M37/0023 ,  F02M37/20 ,  F04D5/002 ,  F04D9/006 ,  F05B2260/503

摘要： A fuel pump is obtained, by which a high fuel pump-up height and a short fuel pump-up time can be achieved without deteriorating a fuel injection state by discharging a vapor toward the [Means for Resolution] An air exhaust port having a channel area s satisfying s≧0.07 mm2 is provided in a lower channel including the terminal of a pump channel, and an air exhaust valve mechanism that opens the valve when the pump is started to exhaust intake air and closes the valve as soon as the application of pressure on the fuel is started to prevent the fuel from being exhausted to the outside of the pump channel is provided. Also, a vapor exhaust port is provided in the pump channel between the air exhaust port and the inlet portion of the pump channel, and a vapor exhaust valve mechanism that closes the valve when the pump is started to prevent a negative pressure at the fuel intake port from dropping and opens the valve when application of pressure on the fuel is started to exhaust fuel containing a vapor to the outside of the pump channel is provided.

摘要翻译： 获得燃料泵，通过该燃料泵可以实现高的燃料泵送高度和短的燃料泵送时间，而不会通过朝向[解析装置]排出蒸汽而使燃料喷射状态恶化。具有通道的排气口 满足s> = 0.07mm 2的区域设置在包括泵通道的端子的下通道中，以及排气阀机构，其在泵启动时排出进气并打开阀;以及 一旦开始对燃料施加压力，就可以关闭阀门，以防止燃料排出到泵通道的外部。 此外，在排气口和泵通道的入口部分之间的泵通道中设置有蒸汽排气口，以及蒸汽排气阀机构，其在泵启动时关闭阀，以防止在燃料进口处的负压 提供了在对燃料施加压力开始排出含有蒸汽的燃料到泵通道外部时，阀门脱落并打开阀门。

公开(公告)号：US07180765B2

公开(公告)日：2007-02-20

申请号：US11024718

申请日：2004-12-30

申请人： Hiroshi Yoshioka ,  Toru Takeshima

发明人： Hiroshi Yoshioka ,  Toru Takeshima

IPC分类号： G11C11/22

CPC分类号： G11C11/22

摘要： A ferroelectric memory including a ferroelectric capacitor to store data; a bit line inputting and outputting data with respect to the ferroelectric capacitor; a control circuit having a first field effect transistor to be connected to the bit line and a reference potential, and to lower potential of the bit line when the bit line is connected to the ferroelectric capacitor; a reference ferroelectric capacitor to store fixed data; a reference bit line to input and output data with respect to the reference ferroelectric capacitor; and a second field effect transistor to be connected to the reference bit line and the reference potential, in which the first and second field effect transistors configure a current mirror circuit, is provided.

摘要翻译： 包含用于存储数据的铁电电容器的铁电存储器; 相对于铁电电容器输入和输出数据的位线; 控制电路，具有要连接到位线的第一场效应晶体管和基准电位，并且当位线连接到铁电电容器时降低位线的电位; 用于存储固定数据的参考铁电电容器; 参考位线，用于相对于参考铁电电容器输入和输出数据; 以及第二场效应晶体管，其连接到参考位线和参考电位，其中第一和第二场效应晶体管构成电流镜电路。

公开(公告)号：US20070008766A1

公开(公告)日：2007-01-11

申请号：US11258227

申请日：2005-10-26

申请人： Hiroshi Yoshioka

发明人： Hiroshi Yoshioka

IPC分类号： G11C11/24

CPC分类号： G11C11/22

摘要： A ferroelectric storage device includes a ferroelectric capacitor C1, a bit line BL, a first switching element 103 selectively connecting the ferroelectric capacitor C1 and the bit line BL, a first transistor 203 connected to the bit line BL and to a reference potential, a reference ferroelectric capacitor CR1, a reference bit line Lref, a reference switching element 105 selectively connecting the reference ferroelectric capacitor CR1 and the reference bit line Lref, a second transistor 201 connected to the reference bit line Lref and to the reference potential, potential control circuits 110 and 200 controlling a potential of the bit line BL and a potential of the reference bit line Lref, and a timing control circuit 210 controlling a detection timing for detecting data on the bit line.

公开(公告)号：US07021138B2

公开(公告)日：2006-04-04

申请号：US10893894

申请日：2004-07-20

申请人： Hiroshi Yoshioka

发明人： Hiroshi Yoshioka

IPC分类号： G01F23/30

CPC分类号： G01F23/0038

摘要： A fuel feeding apparatus is provided with a cap body for closing an opening of the tank, and a liquid level detector that is attached to the cap body and detects a liquid level of the fuel. The liquid level detector includes a floating unit immersed in the fuel and a strain gauge embedded in the floating unit in proximity to the cap body to detect a compression stress caused by buoyant force of the floating unit.

摘要翻译： 燃料供给装置设置有用于关闭罐的开口的盖体和附接到盖体并检测燃料的液面的液位检测器。 液位检测器包括浸入燃料中的浮动单元和嵌在浮动单元中的应变仪，靠近盖体，以检测由浮动单元的浮力引起的压缩应力。

公开(公告)号：US07016236B2

公开(公告)日：2006-03-21

申请号：US11101504

申请日：2005-04-08

申请人： Kazuhiko Kajigaya ,  Kazuyuki Miyazawa ,  Manabu Tsunozaki ,  Kazuyoshi Oshima ,  Takashi Yamazaki ,  Yuji Sakai ,  Jiro Sawada ,  Yasunori Yamaguchi ,  Tetsurou Matsumoto ,  Shinji Udo ,  Hiroshi Yoshioka ,  Hirokazu Saito ,  Mitsuhiro Takano ,  Makoto Morino ,  Sinichi Miyatake ,  Eiji Miyamoto ,  Yasuhiro Kasama ,  Akira Endo ,  Ryoichi Hori ,  Jun Etoh ,  Masashi Horiguchi ,  Shinichi Ikenaga ,  Atsushi Kumata

发明人： Kazuhiko Kajigaya ,  Kazuyuki Miyazawa ,  Manabu Tsunozaki ,  Kazuyoshi Oshima ,  Takashi Yamazaki ,  Yuji Sakai ,  Jiro Sawada ,  Yasunori Yamaguchi ,  Tetsurou Matsumoto ,  Shinji Udo ,  Hiroshi Yoshioka ,  Hirokazu Saito ,  Mitsuhiro Takano ,  Makoto Morino ,  Sinichi Miyatake ,  Eiji Miyamoto ,  Yasuhiro Kasama ,  Akira Endo ,  Ryoichi Hori ,  Jun Etoh ,  Masashi Horiguchi ,  Shinichi Ikenaga ,  Atsushi Kumata

IPC分类号： G11C16/04

CPC分类号： H01L24/06 ,  G11C5/025 ,  G11C5/04 ,  G11C5/063 ,  G11C11/406 ,  G11C29/06 ,  G11C29/12005 ,  G11C29/12015 ,  G11C29/24 ,  G11C29/34 ,  G11C29/50 ,  G11C29/50012 ,  G11C29/70 ,  G11C29/80 ,  G11C29/804 ,  G11C29/832 ,  G11C29/844 ,  G11C2029/2602 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/10897 ,  H01L27/11898 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/73215 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01037 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01043 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01054 ,  H01L2924/01055 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01084 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor memory device formed on a semiconductor chip comprises a plurality of first memory arrays, a plurality of second memory arrays, a first voltage generator, and a plurality of first bonding pads. The semiconductor chip is divided into a first rectangle region, a second rectangle region, and a third rectangle region and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The plurality of first memory arrays are formed in the first rectangle region. The plurality of second memory arrays are formed in the second rectangle region. The voltage generator and the plurality of first bonding pads are arranged in the third rectangle region. The plurality of first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the plurality of second memory arrays.

摘要翻译： 形成在半导体芯片上的半导体存储器件包括多个第一存储器阵列，多个第二存储器阵列，第一电压发生器和多个第一焊盘。 半导体芯片被分成第一矩形区域，第二矩形区域和第三矩形区域，并且第三矩形区域被布置在第一矩形区域和第二矩形区域之间。 多个第一存储器阵列形成在第一矩形区域中。 多个第二存储器阵列形成在第二矩形区域中。 电压发生器和多个第一接合焊盘被布置在第三矩形区域中。 多个第一接合焊盘布置在第一矩形区域和电压发生器之间，并且在电压发生器和多个第二存储器阵列之间没有布置接合焊盘。

公开(公告)号：US20050265065A1

公开(公告)日：2005-12-01

申请号：US11024718

申请日：2004-12-30

申请人： Hiroshi Yoshioka ,  Toru Takeshima

发明人： Hiroshi Yoshioka ,  Toru Takeshima

IPC分类号： G11C7/12 ,  G11C11/22 ,  H01L27/10

CPC分类号： G11C11/22

摘要： A ferroelectric memory including a ferroelectric capacitor to store data; a bit line inputting and outputting data with respect to the ferroelectric capacitor; a control circuit having a first field effect transistor to be connected to the bit line and a reference potential, and to lower potential of the bit line when the bit line is connected to the ferroelectric capacitor; a reference ferroelectric capacitor to store fixed data; a reference bit line to input and output data with respect to the reference ferroelectric capacitor; and a second field effect transistor to be connected to the reference bit line and the reference potential, in which the first and second field effect transistors configure a current mirror circuit, is provided.

摘要翻译： 包含用于存储数据的铁电电容器的铁电存储器; 相对于铁电电容器输入和输出数据的位线; 控制电路，具有要连接到位线的第一场效应晶体管和基准电位，并且当位线连接到铁电电容器时降低位线的电位; 用于存储固定数据的参考铁电电容器; 参考位线，用于相对于参考铁电电容器输入和输出数据; 以及第二场效应晶体管，其连接到参考位线和参考电位，其中第一和第二场效应晶体管构成电流镜电路。