公开(公告)号：US20070138412A1

公开(公告)日：2007-06-21

申请号：US11313319

申请日：2005-12-21

Applicant: Brian Freer

Inventor： Brian Freer

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24578

Abstract: An angle measurement system for measuring angles of incidence for ion beams during ion implantation includes a varied angle slot array and an array of charge measurement devices located downstream of the varied angle slot array. The varied angle slot array includes slots formed within a structure from an entrance surface to an exit surface. Each of the slots has a varied acceptance angle range. The array of charge measurement devices are individually associated with the slots and can measure charge or beam current for beamlets that pass through the slots. These measurements and the varied or different acceptance angle ranges can then be employed to determine a measured angle of incidence and/or angular content for an ion beam.

Abstract translation: 用于测量离子注入期间离子束入射角度的角度测量系统包括位于不同角度槽阵列下游的不同角度槽阵列和电荷测量装置阵列。 不同的角槽阵列包括形成在从入射表面到出射表面的结构内的槽。 每个槽具有不同的接受角度范围。 电荷测量装置的阵列分别与时隙相关联，并且可以测量通过狭槽的小束的电荷或束电流。 然后可以采用这些测量和不同或不同的接受角范围来确定离子束的测量入射角和/或角度含量。

公开(公告)号：US07227160B1

公开(公告)日：2007-06-05

申请号：US11520190

申请日：2006-09-13

Applicant: Bo H. Vanderberg ,  Edward C. Eisner

Inventor： Bo H. Vanderberg ,  Edward C. Eisner

IPC: H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/1471 ,  H01J37/1472 ,  H01J2237/24528

Abstract: An ion implantation system employs a mass analyzer for both mass analysis and angle correction. An ion source generates an ion beam along a beam path. A mass analyzer is located downstream of the ion source that performs mass analysis and angle correction on the ion beam. A resolving aperture within an aperture assembly is located downstream of the mass analyzer component and along the beam path. The resolving aperture has a size and shape according to a selected mass resolution and a beam envelope of the ion beam. An angle measurement system is located downstream of the resolving aperture and obtains an angle of incidence value of the ion beam. A control system derives a magnetic field adjustment for the mass analyzer according to the angle of incidence value of the ion beam from the angle measurement system.

Abstract translation: 离子注入系统采用质量分析仪进行质量分析和角度校正。 离子源沿着光束路径产生离子束。 质量分析仪位于离子源的下游，对离子束进行质量分析和角度校正。 孔组件内的分辨孔位于质量分析器部件的下游并且沿着光束路径。 分辨孔径根据所选质量分辨率和离子束的束包络具有尺寸和形状。 角度测量系统位于分辨孔径的下游，并获得离子束的入射角。 控制系统根据来自角度测量系统的离子束的入射角度，对质量分析器进行磁场调整。

公开(公告)号：US20070120067A1

公开(公告)日：2007-05-31

申请号：US11290344

申请日：2005-11-30

Applicant: Robert Rathmell ,  Bo Vanderberg

Inventor： Robert Rathmell ,  Bo Vanderberg

IPC: G21K5/10

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24578 ,  H01J2237/31703

Abstract: One or more aspects of the present invention pertain to a measurement component that facilitates determining a relative orientation between an ion beam and a workpiece. The measurement component is sensitive to ion radiation and allows a relative orientation between the measurement component and the ion beam to be accurately determined by moving the measurement component relative to the ion beam. The measurement component is oriented at a known relationship relative to the workpiece so that a relative orientation between the workpiece and beam can be established. Knowing the relative orientation between the ion beam and workpiece allows the workpiece to be oriented to a specific angle relative to the measured beam angle for more accurate and precise doping of the workpiece, which enhances semiconductor fabrication.

Abstract translation: 本发明的一个或多个方面涉及有助于确定离子束和工件之间的相对取向的测量部件。 测量部件对离子辐射敏感，并允许通过相对于离子束移动测量部件来精确地确定测量部件和离子束之间的相对取向。 测量部件相对于工件以已知的关系定向，从而可以建立工件和梁之间的相对取向。 了解离子束和工件之间的相对取向允许工件相对于测量的光束角定向到特定的角度，以更准确和精确地掺杂工件，这增强了半导体制造。

公开(公告)号：US20070008105A1

公开(公告)日：2007-01-11

申请号：US11147973

申请日：2005-06-08

Applicant: Kevin Verrier ,  David Bernhardt ,  Jerry Negrotti ,  Donald Polner

Inventor： Kevin Verrier ,  David Bernhardt ,  Jerry Negrotti ,  Donald Polner

IPC: G08B19/00

CPC classification number: H01L21/67259 ,  H01L21/68

Abstract: Method and apparatus for use in setting up workpiece treatment or processing equipment. A disclosed system processes silicon wafers that are treated during processing steps in producing semiconductor integrated circuits. The processing equipment includes a wafer support that supports a wafer in a treatment region during wafer processing. A housing provides a controlled environment within the housing interior for processing the wafer on the wafer support. A mechanical transfer system transports wafers to and from the support. A wafer simulator is used to simulate wafer movement and includes a pressure sensor for monitoring contact between the simulator and the wafer transfer and support equipment. In one illustrated embodiment the wafer simulator is generally circular and includes three equally spaced pressure sensors for monitoring contact with wafer transport and support equipment.

Abstract translation: 用于设置工件处理或加工设备的方法和装置。 所公开的系统处理在制造半导体集成电路的处理步骤期间处理的硅晶片。 处理设备包括在晶片处理期间在处理区域中支撑晶片的晶片支撑件。 壳体在壳体内部提供受控的环境，用于在晶片支撑件上处理晶片。 机械传输系统将晶片传送到支撑件和从支撑件传送晶片。 使用晶片模拟器来模拟晶片移动，并且包括用于监测模拟器与晶片转移和支撑设备之间的接触的压力传感器。 在一个所示实施例中，晶片模拟器通常是圆形的并且包括三个等间隔的压力传感器，用于监测与晶片输送和支撑设备的接触。

公开(公告)号：US07151658B2

公开(公告)日：2006-12-19

申请号：US10420329

申请日：2003-04-22

Applicant: Peter L. Kellerman ,  Victor Benveniste ,  Michel Pharand ,  Dale K. Stone

Inventor： Peter L. Kellerman ,  Victor Benveniste ,  Michel Pharand ,  Dale K. Stone

IPC: H02N13/00

CPC classification number: H01L21/6833 ,  H02N13/00

Abstract: An electrostatic clamp for securing a semiconductor wafer during processing. The electrostatic clamp includes a base member, a first dielectric layer, a second dielectric layer having a gas pressure distribution micro-groove network formed therein, a gas gap positioned between a backside of a semiconductor wafer and the second dielectric layer, and a pair of high voltage electrodes positioned between the first dielectric layer and the second dielectric layer.

Abstract translation: 一种用于在加工过程中固定半导体晶片的静电夹。 静电夹具包括：基座部件，第一电介质层，形成有气体压力分布微槽网络的第二电介质层，位于半导体晶片的背面和第二电介质层之间的气隙，以及一对 位于第一介电层和第二介电层之间的高压电极。

公开(公告)号：US07119343B2

公开(公告)日：2006-10-10

申请号：US10840186

申请日：2004-05-06

Applicant: Mehran Asdigha ,  Kurt D. Cleveland ,  Jay Krishnasamy ,  Kan Ota

Inventor： Mehran Asdigha ,  Kurt D. Cleveland ,  Jay Krishnasamy ,  Kan Ota

IPC: G21K5/10 ,  G01K5/08 ,  G01F23/00

CPC classification number: H01L21/68764 ,  H01J37/3171 ,  H01J2237/20228 ,  H01L21/67069

Abstract: The present invention is directed to a scanning apparatus and method for processing a substrate, wherein the scanning apparatus comprises a first link and a second link rigidly coupled to one another at a first joint, wherein the first link and second link are rotatably coupled to a base portion by the first joint, therein defining a first axis. An end effector, whereon the substrate resides, is coupled to the first link. The second link is coupled to a first actuator via at least second joint. The first actuator is operable to translate the second joint with respect to the base portion, therein rotating the first and second links about the first axis and translating the substrate along a first scan path in an oscillatory manner. A controller is further operable to maintain a generally constant translational velocity of the end effector within a predetermined scanning range.

Abstract translation: 本发明涉及一种用于处理基板的扫描装置和方法，其中扫描装置包括第一连杆和在第一关节处彼此刚性地联接的第二连杆，其中第一连杆和第二连杆可旋转地连接到 其中所述第一接头限定第一轴线。 衬底所在的末端执行器被耦合到第一连杆。 第二连杆通过至少第二接头联接到第一致动器。 第一致动器可操作以相对于基部部分平移第二接头，其中使第一和第二连杆围绕第一轴线旋转，并以振荡方式沿着第一扫描路径平移基板。 控制器还可操作以将末端执行器的大致恒定的平移速度保持在预定扫描范围内。

公开(公告)号：US20060219955A1

公开(公告)日：2006-10-05

申请号：US11390039

申请日：2006-03-27

Applicant: Andrew Ray

Inventor： Andrew Ray

IPC: H01J37/08

CPC classification number: H01J37/244 ,  H01J37/304 ,  H01J37/3045 ,  H01J37/3171 ,  H01J2237/24405 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/24542 ,  H01J2237/30405 ,  H01J2237/30411 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: A system, apparatus, and method for determining position and two angles of incidence of an ion beam to a surface of a workpiece is provided. A measurement apparatus having an elongate first and second sensor is coupled to a translation mechanism, wherein the first sensor extends in a first direction perpendicular to the translation, and wherein the second sensor extends at an oblique angle to the first sensor. The first and second elongate sensors sense one or more characteristics of the ion beam as the first and second sensors pass through the ion beam at a respective first time and a second time, and a controller is operable to determine a position and first and second angle of incidence of the ion beam, based, at least in part, on the one or more characteristics of the ion beam sensed by the first sensor and second sensor at the first and second times.

Abstract translation: 提供了一种用于确定离子束到工件表面的位置和两个入射角的系统，装置和方法。 具有细长的第一和第二传感器的测量装置耦合到平移机构，其中第一传感器沿垂直于平移的第一方向延伸，并且其中第二传感器以与第一传感器成倾斜的角度延伸。 当第一和第二传感器在相应的第一时间和第二时间通过离子束时，第一和第二细长传感器感测离子束的一个或多个特性，并且控制器可操作以确定位置和第一和第二角度 至少部分地基于由第一传感器和第二传感器在第一次和第二次感测的离子束的一个或多个特性。

公开(公告)号：US07112808B2

公开(公告)日：2006-09-26

申请号：US10786660

申请日：2004-02-25

Applicant: Michael Ioannou ,  Mehran Asdigha ,  Joseph Ferrara

Inventor： Michael Ioannou ,  Mehran Asdigha ,  Joseph Ferrara

IPC: G21K5/10

CPC classification number: H01J37/3171 ,  H01J2237/20228

Abstract: The present invention is directed to a scanning apparatus and method for processing a substrate, wherein the scanning apparatus comprises a base portion and a rotary subsystem. The rotary subsystem comprises a first link comprising a first joint, wherein the first link is rotatably coupled to the base portion by the first joint, and a second link comprising a second joint, wherein the second link is rotatably coupled to the first link by the second joint. The first joint and the second joint are spaced a predetermined distance from one another. The second link further comprising an end effector whereon the substrate resides, and wherein the end effector is operably coupled to the second link. The end effector is further spaced from the second joint by the predetermined distance, wherein a rotation of the first link and second link in a respective first direction and second direction is operable to linearly oscillate the end effector along a linear first scan path, and wherein the rotational velocity of the first link and second link does not cross zero.

Abstract translation: 本发明涉及一种用于处理基板的扫描装置和方法，其中扫描装置包括基部和旋转子系统。 所述旋转子系统包括第一连杆，所述第一连杆包括第一接头，其中所述第一连杆通过所述第一接头可旋转地联接到所述基座部分，所述第二连杆包括第二接头，其中所述第二连杆通过所述第一接头可旋转地联接到所述第一连杆 第二关节 第一关节和第二关节彼此隔开预定的距离。 所述第二连杆还包括位于所述基板上的端部执行器，并且其中所述端部执行器可操作地联接到所述第二连杆。 末端执行器与第二关节进一步间隔预定距离，其中第一连杆和第二连杆在相应的第一方向和第二方向上的旋转可操作以沿着线性第一扫描路径线性振荡末端执行器，并且其中 第一连杆和第二连杆的旋转速度不为零。

公开(公告)号：US20060097196A1

公开(公告)日：2006-05-11

申请号：US10983461

申请日：2004-11-08

Applicant: Michael Graf ,  Andrew Ray

Inventor： Michael Graf ,  Andrew Ray

IPC: H01J37/317

CPC classification number: H01J37/304 ,  H01J37/20 ,  H01J37/3171 ,  H01L21/68764

Abstract: The present invention is directed to implanting ions in a workpiece in a serial implantation process in a manner that produces one or more scan patterns on the workpiece that resemble the size, shape and/or other dimensional aspects of the workpiece. Further, the scan patterns are interleaved with one another and can continue to be produced until the entirety of the workpiece is uniformly implanted with ions.

Abstract translation: 本发明涉及以串联注入工艺将工件放置在工件上，以便在工件上产生类似于工件的尺寸，形状和/或其他尺寸方面的一个或多个扫描图案。 此外，扫描图案彼此交错并且可以继续地被产生，直到整个工件被均匀地注入离子。

公开(公告)号：US07022984B1

公开(公告)日：2006-04-04

申请号：US11047238

申请日：2005-01-31

Applicant: Robert D. Rathmell ,  Bo H. Vanderberg ,  Youngzhang Huang

Inventor： Robert D. Rathmell ,  Bo H. Vanderberg ,  Youngzhang Huang

IPC: H01J40/00 ,  H01J47/00 ,  G21G51/00

CPC classification number: H01J37/3171 ,  H01J37/05 ,  H01J2237/053 ,  H01J2237/303 ,  H01J2237/31705

Abstract: Angular electrostatic filters and methods of filtering that remove energy contaminants from a ribbon shaped ion beam are disclosed. An angular electrostatic filter comprises a top deflection plate and a bottom deflection plate extending from an entrance side to an exit side of the filter. The bottom deflection plate is substantially parallel to the top deflection plate and includes an angle portion. An entrance focus electrode is positioned on the entrance side of the filter and an exit focus electrode is positioned on the exit side of the filter and both serve to focus the ion beam. Edge electrodes are positioned between the top and bottom deflection plates and at sides of the filter to mitigate edge effects. A negative bias is also applied to the top and bottom plates to mitigate space charge by elevating the beam energy.

Abstract translation: 公开了角膜静电过滤器和从带状离子束去除能量污染物的过滤方法。 角度静电过滤器包括顶部偏转板和从过滤器的入口侧到出口侧延伸的底部偏转板。 底部偏转板基本上平行于顶部偏转板并且包括角部分。 入口聚焦电极位于过滤器的入口侧，出射聚焦电极位于过滤器的出口侧，并且两者都用于聚焦离子束。 边缘电极位于顶部和底部偏转板之间以及位于过滤器侧面以减轻边缘效应。 顶板和底板也施加负偏压，以通过提升光束能量来减轻空间电荷。