公开(公告)号：US09196451B2

公开(公告)日：2015-11-24

申请号：US13353032

申请日：2012-01-18

Applicant: Shouyin Zhang ,  Noel Smith ,  Walter Skoczylas

Inventor： Shouyin Zhang ,  Noel Smith ,  Walter Skoczylas

IPC: H01J27/00 ,  H01J37/08 ,  H01J27/16

CPC classification number: H01J37/08 ,  H01J27/16 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/026 ,  H01J2237/038 ,  H01J2237/0815 ,  H01J2237/31749

Abstract: An inductively coupled plasma source for a focused charged particle beam system includes a dielectric liquid that insulates and cools the plasma chamber. A flow restrictor at an electrical potential that is a large fraction of the plasma potential reducing arcing because the voltage drop in the gas occurs primarily at relative high pressure.

Abstract translation: 用于聚焦带电粒子束系统的电感耦合等离子体源包括绝缘和冷却等离子体室的电介质液体。 由于气体中的电压降主要发生在相对较高的压力下，电流下的流量限制器是等离子体电位降低电弧的大部分。

公开(公告)号：US20150056380A1

公开(公告)日：2015-02-26

申请号：US13975206

申请日：2013-08-23

Applicant: ADVANCED ION BEAM TECHNOLOGY , INC.

Inventor： Stephen Edward Savas ,  Xiao Bai ,  Zhimin Wan ,  Peter M. Kopalidis

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/0815 ,  H01J2237/0817

Abstract: An ion source uses at least one induction coil to generate ac magnetic field to couple rf/VHF power into a plasma within a vessel, where the excitation coil may be a single set of turns each turn having lobes or multiple separate sets of windings. The excitation coil is positioned outside and proximate that side of the vessel that is opposite to the extraction slit, and elongated parallel to the length dimension of the extraction slit. The conducting shield(s) positioned outside or integrated with the well of the vessel are used to block the capacitive coupling to the plasma and/or to collect any rf/VHF current may be coupled into the plasma. The conducting shield positioned between the vessel and the coil set can either shield the plasma from capacitive coupling from the excitation coils, or be tuned to have a higher rf/VHF voltage to ignite or clean the source.

Abstract translation: 离子源使用至少一个感应线圈来产生交流磁场，以将rf / VHF功率耦合到容器内的等离子体中，其中所述激励线圈可以是单一组的匝，每一匝具有凸角或多个单独的绕组组。 励磁线圈位于与抽出狭缝相对的容器的外侧和附近，并且平行于提取狭缝的长度尺寸延伸。 位于外部或与容器的阱集成在一起的导电屏蔽用于阻挡与等离子体的电容耦合和/或收集任何rf / VHF电流可以耦合到等离子体中。 位于容器和线圈组之间的导电屏蔽件可以屏蔽来自激励线圈的电容耦合的等离子体，或者被调谐为具有较高的rf / VHF电压以点燃或清洁源极。

公开(公告)号：US20140213014A1

公开(公告)日：2014-07-31

申请号：US13750287

申请日：2013-01-25

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

Inventor： Vikram Bhosle ,  Bon-Woong Koo

IPC: H01L31/18 ,  H01L21/265

CPC classification number: H01L21/26513 ,  H01J37/08 ,  H01J2237/0815 ,  H01J2237/0827 ,  H01J2237/31711 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of tailoring the dopant profile of a workpiece by modulating one or more operating parameters is disclosed. In one embodiment, the workpiece may be a solar cell and the desired dopant profile may include a heavily doped surface region and a highly doped region. These two regions can be generated by varying one or more of the parameters of the ion implanter. For example, the extraction voltage may be changed to affect the energy of the implanted ions. The ionization energy can be changed to affect the species of ions being generated from the source gas. In another embodiment, the source gasses that are ionized may be changed to affect the species being generated. After the implant has been performed, thermal processing is performed which minimizes the diffusion of the ions in the workpiece.

Abstract translation: 公开了一种通过调制一个或多个操作参数来调整工件的掺杂物轮廓的方法。 在一个实施例中，工件可以是太阳能电池，并且期望的掺杂剂分布可以包括重掺杂的表面区域和高掺杂区域。 可以通过改变离子注入机的一个或多个参数来产生这两个区域。 例如，可以改变提取电压以影响注入的离子的能量。 可以改变电离能以影响从源气体产生的离子的种类。 在另一个实施方案中，可以改变电离的源气体以影响所产生的物质。 在进行了植入物之后，进行热处理，其使离子在工件中的扩散最小化。

公开(公告)号：US08680482B2

公开(公告)日：2014-03-25

申请号：US13962346

申请日：2013-08-08

Applicant: Jabez J. McClelland ,  Brenton J. Knuffman ,  Adam V. Steele

Inventor： Jabez J. McClelland ,  Brenton J. Knuffman ,  Adam V. Steele

IPC: H01J27/24

CPC classification number: H01J27/022 ,  G21K1/00 ,  H01J27/24 ,  H01J37/065 ,  H01J37/08 ,  H01J2237/061 ,  H01J2237/06333 ,  H01J2237/0815 ,  H05H3/02

Abstract: A method for aligning the axis of an atom beam with the orientation of an electric field at a particular location within an enclosure for use in creating a charged particle source by photoionizing a cold atom beam. The method includes providing an atom beam in the enclosure, providing a plurality of electrically conductive devices in said enclosure, evacuating the enclosure to a pressure below about 10−6 millibar, and aligning the axis of the atom beam with the orientation of the electric field, relative to each other, within less than about two degrees. Alignment may be facilitated by applying at least one voltage to the electrically conductive devices, mechanically tilting the atom beam's axis orientation of the electric field relative to each other and/or causing a deflection of the atom beam.

Abstract translation: 一种用于使原子束的轴线与壳体内的特定位置处的电场的取向对准的方法，用于通过使冷原子束光电离产生带电粒子源。 该方法包括在外壳中提供原子束，在所述外壳中提供多个导电装置，将外壳抽空至低于约10-6毫巴的压力，并使原子束的轴线与电场的取向对齐 相对于彼此，在小于约2度内。 可以通过将至少一个电压施加到导电装置来机械地倾斜电场相对于彼此的原子束的轴取向和/或引起原子束的偏转来促进对准。

公开(公告)号：US20130313443A1

公开(公告)日：2013-11-28

申请号：US13955009

申请日：2013-07-31

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

Inventor： Bon-Woong Koo ,  Victor Benveniste ,  Christopher A. Rowland ,  Craig R. Chaney ,  Frank Sinclair ,  Neil J. Bassom

IPC: H01J27/02

CPC classification number: H01J27/022 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32412 ,  H01J37/32422 ,  H01J2237/006 ,  H01J2237/061 ,  H01J2237/0815 ,  H01J2237/24514

Abstract: An ion source includes an ion chamber housing defining an ion source chamber, the ion chamber housing having a side with a plurality of apertures. The ion source also includes an antechamber housing defining an antechamber. The antechamber housing shares the side with the plurality of apertures with the ion chamber housing. The antechamber housing has an opening to receive a gas from a gas source. The antechamber is configured to transform the gas into an altered state having excited neutrals that is provided through the plurality of apertures into the ion source chamber.

Abstract translation: 离子源包括限定离子源室的离子室壳体，离子室壳体具有带有多个孔的侧面。 离子源还包括限定前室的前室。 前室与离子室外壳共享具有多个孔的侧面。 前厅外壳有一个开口，可以接收来自气源的气体。 前室被配置成将气体转变成具有通过多个孔提供到离子源室中的具有激发中性粒子的改变状态。

公开(公告)号：US08590485B2

公开(公告)日：2013-11-26

申请号：US12767125

申请日：2010-04-26

Applicant: Costel Biloiu ,  Jay Scheuer ,  Joseph Olson ,  Frank Sinclair ,  Daniel Distaso

Inventor： Costel Biloiu ,  Jay Scheuer ,  Joseph Olson ,  Frank Sinclair ,  Daniel Distaso

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H05B31/26

CPC classification number: H01J37/08 ,  H01J27/16 ,  H01J37/3171 ,  H01J2237/061 ,  H01J2237/065 ,  H01J2237/0815 ,  H05H1/30

Abstract: An ion source, capable of generating high-density wide ribbon ion beam, utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width, which is the dimension along which the beam is extracted, is greater than its height. The depth of the source may be defined to maximize energy transfer from the antenna to the plasma. In a further embodiment, a multicusp magnetic field surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power.

Abstract translation: 公开了一种能够利用电感耦合等离子体生产产生高密度宽带状离子束的离子源。 与常规ICP源相反，本公开描述了不是圆柱形的ICP源。 相反，源被限定为使得其宽度（其是提取梁的尺寸）大于其高度。 可以定义源的深度以最大化从天线到等离子体的能量传递。 在另一个实施例中，围绕ICP源的多谐振磁场用于进一步增加电流密度并提高所提取的离子束的均匀性。 离子束均匀性也可以通过几个独立的控制来控制，包括气体流速和输入射频功率。

公开(公告)号：US08253118B2

公开(公告)日：2012-08-28

申请号：US12579237

申请日：2009-10-14

Applicant: Shouyin Zhang ,  Tom Miller ,  Sean Kellogg ,  Anthony Graupera

Inventor： Shouyin Zhang ,  Tom Miller ,  Sean Kellogg ,  Anthony Graupera

IPC: H01J49/10 ,  H01J27/02

CPC classification number: H01J37/3005 ,  H01J37/3023 ,  H01J2237/006 ,  H01J2237/0458 ,  H01J2237/06366 ,  H01J2237/0815 ,  H01J2237/31749

Abstract: A method for performing milling and imaging in a focused ion beam (FIB) system employing an inductively-coupled plasma ion source, wherein two sets of FIB system operating parameters are utilized: a first set representing optimized parameters for operating the FIB system in a milling mode, and a second set representing optimized parameters for operating in an imaging mode. These operating parameters may comprise the gas pressure in the ICP source, the RF power to the ICP source, the ion extraction voltage, and in some embodiments, various parameters within the FIB system ion column, including lens voltages and the beam-defining aperture diameter. An optimized milling process provides a maximum milling rate for bulk (low spatial resolution) rapid material removal from the surface of a substrate. An optimized imaging process provides minimized material removal and higher spatial resolutions for improved imaging of the substrate area being milled.

Abstract translation: 一种在采用电感耦合等离子体离子源的聚焦离子束（FIB）系统中进行铣削和成像的方法，其中利用两组FIB系统操作参数：第一组，表示用于在铣削中操作FIB系统的优化参数 模式，以及表示用于在成像模式下操作的优化参数的第二组。 这些操作参数可以包括ICP源中的气体压力，ICP源的RF功率，离子提取电压，以及在一些实施例中，FIB系统离子列内的各种参数，包括透镜电压和光束限定孔直径 。 优化的铣削工艺提供了从基材表面快速去除材料的体积（低空间分辨率）的最大研磨速度。 优化的成像过程提供最小化的材料去除和更高的空间分辨率，用于改进正在研磨的衬底区域的成像。

公开(公告)号：US08030621B2

公开(公告)日：2011-10-04

申请号：US12251917

申请日：2008-10-15

Applicant: Paulo Lozano ,  Manuel Martinez-Sanchez

Inventor： Paulo Lozano ,  Manuel Martinez-Sanchez

IPC: H01T23/00

CPC classification number: H01J3/04 ,  H01J27/26 ,  H01J37/08 ,  H01J2237/0048 ,  H01J2237/08 ,  H01J2237/0815 ,  H01J2237/0822 ,  H01J2237/31749

Abstract: An apparatus for producing ions can include an emitter having a first end and a second end. The emitter can be coated with an ionic liquid room-temperature molten salt. The apparatus can also include a power supply and a first electrode disposed downstream relative to the first end of the emitter and electrically connected to a first lead of the power supply. The apparatus can also include a second electrode disposed downstream relative to the second end of the emitter and electrically connected to a second lead of the power supply.

Abstract translation: 用于产生离子的装置可以包括具有第一端和第二端的发射体。 发射体可以用离子液体室温熔融盐涂覆。 该装置还可以包括电源和设置在发射器的第一端的下游并电连接到电源的第一引线的第一电极。 该装置还可以包括设置在发射器的第二端的下游并电连接到电源的第二引线的第二电极。

公开(公告)号：US07863581B2

公开(公告)日：2011-01-04

申请号：US12135464

申请日：2008-06-09

Applicant: Paulo Lozano ,  Manuel Martinez-Sanchez

Inventor： Paulo Lozano ,  Manuel Martinez-Sanchez

IPC: H01J27/00

CPC classification number: H01J37/08 ,  H01J27/028 ,  H01J27/26 ,  H01J2237/0048 ,  H01J2237/08 ,  H01J2237/0815 ,  H01J2237/0827 ,  H01J2237/31749

Abstract: An apparatus for producing negative ions including an emitter coated with an ionic liquid room-temperature molten salt, an electrode positioned downstream relative to the emitter, a power supply that applies a voltage to the emitter with respect to the electrode. The power supply is sufficient to generate a stable high brightness beam of negative ions having minimal chromatic and spherical aberrations in the beam. An electrostatic lens and deflector is used to focus and direct the beam to a target.

Abstract translation: 一种用于产生负离子的装置，包括涂覆有离子液体室温熔融盐的发射体，位于发射极下游的电极，相对于电极向发射极施加电压的电源。 电源足以产生稳定的高亮度的负离子束，该束具有在光束中最小的色差和球面像差。 静电透镜和偏转器用于聚焦并将光束引导到目标。

公开(公告)号：US07838842B2

公开(公告)日：2010-11-23

申请号：US11268005

申请日：2005-11-07

Applicant: Thomas N. Horsky

Inventor： Thomas N. Horsky

IPC: H01J27/00 ,  H05B31/26

CPC classification number: C23C14/48 ,  H01J27/026 ,  H01J27/08 ,  H01J27/205 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/0827 ,  H01J2237/31701 ,  H01L21/265 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

Abstract: An ion source is disclosed for providing a range of ion beams consisting of either ionized clusters, such as B2Hx+, B5Hx+, B10Hx+, B18Hx+, P4+ or As4+, or monomer ions, such as Ge+, In+, Sb+, B+, As+, and P+, to enable cluster implants and monomers implants into silicon substrates for the purpose of manufacturing CMOS devices, and to do so with high productivity. The range of ion beams is generated by a universal ion source in accordance with the present invention which is configured to operate in two discrete modes: an electron impact mode, which efficiently produces ionized clusters, and an arc discharge mode, which efficiently produces monomer ions.

Abstract translation: 公开了一种离子源，用于提供由诸如B 2 H x +，B 5 H x +，B 10 H x +，B 18 H x +，P 4 +或As 4+的离子化簇或诸如Ge +，In +，Sb +，B +，As +和P + ，以使集群植入物和单体植入物进入硅衬底以制造CMOS器件，并以高生产率进行。 离子束的范围由根据本发明的通用离子源产生，其被配置为以两种离散模式操作：电子冲击模式，其有效地产生离子簇，以及电弧放电模式，其有效地产生单体离子 。