公开(公告)号：US07893454B2

公开(公告)日：2011-02-22

申请号：US12544328

申请日：2009-08-20

申请人： Toshimasa Kobayashi ,  Kensaku Motoki

发明人： Toshimasa Kobayashi ,  Kensaku Motoki

IPC分类号： H01L29/24 ,  H01L33/00

CPC分类号： C30B25/02 ,  B82Y20/00 ,  C30B29/40 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01S5/0202 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12

摘要： A semiconductor light emitting device or a semiconductor device produced using a nitride type III-V group compound semiconductor substrate on which a plurality of second regions made of a crystal having a second average dislocation density are regularly arranged in a first region made of a crystal having a first average dislocation density so as to produce the structured substrate, the second average dislocation density being greater than the first average dislocation density, a light emitting region of the semiconductor light emitting device or an active region of the semiconductor device is formed in such a manner that it does not pass through any one of the second regions.

摘要翻译： 使用氮化物III-V族化合物半导体衬底制造的半导体发光器件或半导体器件，其上由具有第二平均位错密度的晶体制成的多个第二区域规则地布置在由具有第二平均位错密度的晶体制成的第一区域中， 第一平均位错密度以产生结构化基板，第二平均位错密度大于第一平均位错密度，半导体发光器件的发光区域或半导体器件的有源区域形成为 它不通过任何一个第二区域。

公开(公告)号：US07876798B2

公开(公告)日：2011-01-25

申请号：US12344343

申请日：2008-12-26

申请人： Shinichi Kohda

发明人： Shinichi Kohda

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3211 ,  H01S5/34333

摘要： A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate containing no Al. The group III nitride semiconductor multilayer structure forms a structure including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer. The n-type semiconductor layer includes an n-type cladding layer containing Al and an n-type guide layer having a smaller band gap than the n-type cladding layer. The p-type semiconductor layer includes a p-type cladding layer containing Al and a p-type guide layer having a smaller band gap than the p-type cladding layer. A removal region is formed by partially removing the layers containing Al in the group III nitride semiconductor multilayer structure from the substrate.

摘要翻译： 通过在不含Al的衬底上生长III族氮化物半导体多层结构，形成氮化物半导体激光器件。 III族氮化物半导体多层结构形成包括n型半导体层，p型半导体层和保持在n型半导体层和p型半导体层之间的发光层的结构。 n型半导体层包括含有Al的n型包覆层和具有比n型覆层更小的带隙的n型引导层。 p型半导体层包括含有Al的p型覆层和具有比p型覆层更小的带隙的p型引导层。 通过从衬底部分去除III族氮化物半导体多层结构中含有Al的层来形成去除区。

公开(公告)号：US20110013659A1

公开(公告)日：2011-01-20

申请号：US12919847

申请日：2009-02-25

申请人： Kunio Takeuchi ,  Yasumitsu Kunoh ,  Masayuki Hata

发明人： Kunio Takeuchi ,  Yasumitsu Kunoh ,  Masayuki Hata

IPC分类号： H01S5/028 ,  H01L21/30

CPC分类号： H01S5/10 ,  B82Y20/00 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01S5/0202 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/02276 ,  H01S5/028 ,  H01S5/1064 ,  H01S5/3211 ,  H01S5/34333 ,  H01S5/4031

摘要： A semiconductor laser device having a cladding layer in the vicinity of an active layer capable of being inhibited from cracking is obtained. This semiconductor laser device (100) includes a first semiconductor device portion (120) and a support substrate (10) bonded to the first semiconductor device portion, and the first semiconductor device portion has a cavity, a first conductivity type first cladding layer (22) having a first region (22a) having a first width in a second direction (direction A) intersecting with a first direction (direction B) in which the cavity extends and a second region (22b) having a second width smaller than the first width in the second direction, formed on the first region, and a first active layer (23) and a second conductivity type second cladding layer (24) formed on the second region of the first cladding layer.

摘要翻译： 获得具有能够抑制裂纹的有源层附近的包覆层的半导体激光装置。 该半导体激光器件（100）包括接合到第一半导体器件部分的第一半导体器件部分（120）和支撑衬底（10），并且第一半导体器件部分具有腔体，第一导电类型的第一覆盖层（22 ）具有第一区域（22a），所述第一区域（22a）在与所述空腔延伸的第一方向（方向B）相交的第二方向（方向A）上具有第一宽度，以及具有小于所述第一宽度的第二宽度的第二区域 形成在第一区域上的第二方向，以及形成在第一包层的第二区域上的第一有源层（23）和第二导电型第二覆盖层（24）。

公开(公告)号：US20100329296A1

公开(公告)日：2010-12-30

申请号：US12728703

申请日：2010-03-22

申请人： Masayuki HATA ,  Kunio TAKEUCHI

发明人： Masayuki HATA ,  Kunio TAKEUCHI

IPC分类号： H01S5/40 ,  H01S5/02 ,  H01L21/50

CPC分类号： H01S5/405 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/73257 ,  H01S5/0202 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02268 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/4087 ,  H01S2301/176 ,  H04N9/3161 ,  H01L2924/00014

摘要： A method of manufacturing a semiconductor laser device includes steps of forming a third oblong substrate by bonding a first oblong substrate and a second oblong substrate, and dividing the third oblong substrate so that first side surfaces of the first semiconductor laser devices protrude sideward from positions formed with third side surfaces of the second semiconductor laser devices while the fourth side surfaces of the second semiconductor laser devices protrude sideward from positions formed with the second side surfaces of the first semiconductor laser devices, and the first electrodes are located on protruding regions of the first semiconductor laser devices.

摘要翻译： 一种制造半导体激光器件的方法包括以下步骤：通过接合第一长方形基板和第二长方形基板来形成第三长方形基板，并且分割第三长方形基板，使得第一半导体激光器件的第一侧表面从形成的位置向侧面突出 第二半导体激光器件的第三侧表面，而第二半导体激光器件的第四侧表面从形成有第一半导体激光器件的第二侧表面的位置向侧面突出，并且第一电极位于第一半导体激光器的突出区域 半导体激光器件。

公开(公告)号：US20100187542A1

公开(公告)日：2010-07-29

申请号：US12670631

申请日：2008-07-31

申请人： Takashi Ichihara ,  Hirofumi Yoshida ,  Takao Yamada ,  Yohei Wakai

发明人： Takashi Ichihara ,  Hirofumi Yoshida ,  Takao Yamada ,  Yohei Wakai

IPC分类号： H01L33/00 ,  H01L21/78

CPC分类号： H01S5/0201 ,  B82Y20/00 ,  H01L33/0095 ,  H01S5/0202 ,  H01S5/0213 ,  H01S5/305 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333

摘要： A method for manufacturing a semiconductor light emitting element from a wafer in which a gallium nitride compound semiconductor has been laminated on a sapphire substrate having an orientation flat, comprises of: laminating a semiconductor layer on a first main face of the sapphire substrate having an off angle θ in a direction Xo parallel to the orientation flat; forming a first break groove that extends in a direction Y substantially perpendicular to the direction Xo, on the semiconductor layer side; forming a second break line that is shifted by a predetermined distance in the ±Xo direction from a predicted split line within the first break groove and parallel to the first break groove in the interior of the sapphire substrate and corresponding to the inclination of the off angle θ; and splitting the wafer along the first and/or second break line.

摘要翻译： 一种半导体发光元件的制造方法，其特征在于，在具有取向平坦化的蓝宝石基板上层叠有氮化镓系化合物半导体的晶片的半导体发光元件的制造方法包括：在具有断开状态的蓝宝石基板的第一主面上层叠半导体层 角度和角度 在方向Xo平行于取向平面; 形成在所述半导体层侧沿着与所述方向Xo大致垂直的方向Y延伸的第一断裂槽; 形成从第一断裂槽内的预测分割线向±Xo方向偏移预定距离并平行于蓝宝石基板内部的第一断裂槽并对应于偏角的倾斜的第二断裂线 ＆thetas ;; 以及沿着第一和/或第二断裂线分裂晶片。

公开(公告)号：US07763486B2

公开(公告)日：2010-07-27

申请号：US11950494

申请日：2007-12-05

申请人： Akihito Ohno ,  Masayoshi Takemi ,  Nobuyuki Tomita

发明人： Akihito Ohno ,  Masayoshi Takemi ,  Nobuyuki Tomita

IPC分类号： H01L33/02

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/325 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/3054 ,  H01S5/34333 ,  H01S2304/04

摘要： A nitride semiconductor stacked structure having good working efficiency includes a p-type nitride semiconductor layer of low resistance, which is formed from an organometallic compound, compounds including Group V elements, including ammonia and a hydrazine derivative, and a p-type impurity material on a substrate. The p-type nitride layer has a carbon concentration not higher than 1×1018 cm−3.

摘要翻译： 具有良好工作效率的氮化物半导体层叠结构包括由有机金属化合物形成的低电阻p型氮化物半导体层，包括氨和肼衍生物的V族元素和p型杂质材料 底物。 p型氮化物层的碳浓度不高于1×1018cm-3。

公开(公告)号：US07700392B2

公开(公告)日：2010-04-20

申请号：US11286348

申请日：2005-11-25

申请人： Tetsuzo Ueda ,  Hisanori Ishiguro

发明人： Tetsuzo Ueda ,  Hisanori Ishiguro

IPC分类号： H01L21/78 ,  H01L21/301 ,  H01L21/46

CPC分类号： H01L21/67213 ,  B82Y20/00 ,  H01L21/67132 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0213 ,  H01S5/028 ,  H01S5/34333

摘要： The present invention is to provide a semiconductor laser device manufacturing method for realizing highly reliable semiconductor laser devices. The semiconductor laser device manufacturing method includes: cutting a wafer into bar-shaped wafers by scanning an electron beam on the front side of the wafer on which a semiconductor laser structure has been formed so as to cause cracks which trigger the cutting of the wafer; and depositing front and back coating films on the end faces, which have been newly exposed by the cutting of the wafer, of the cut wafers. In the method the cut wafers are transferred in a non-ambient atmosphere at a time between the cutting of the wafer and the depositing of the end face coating films.

摘要翻译： 本发明提供一种实现高可靠性的半导体激光器件的半导体激光器件制造方法。 半导体激光器件制造方法包括：通过扫描在其上形成有半导体激光器结构的晶片的正面上的电子束来将晶片切割成棒状晶片，以引起触发切割晶片的裂纹; 并且通过切割晶片新近暴露的端面上沉积切割晶片的前后涂膜。 在该方法中，切割晶片在切割晶片和沉积端面涂膜之间的时间在非环境大气中转移。

公开(公告)号：US20100067558A1

公开(公告)日：2010-03-18

申请号：US12620627

申请日：2009-11-18

申请人： Kyosuke Kuramoto

发明人： Kyosuke Kuramoto

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  B82Y20/00 ,  H01S5/0021 ,  H01S5/0202 ,  H01S5/0206 ,  H01S5/02272 ,  H01S5/0425 ,  H01S5/2009 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/34333 ,  H01S2304/04

摘要： A semiconductor laser having a high electrostatic withstand voltage, resistant to a power supply surge, and having improved long-term reliability is obtained by reducing current leakage through a threading dislocation portion. The semiconductor laser includes a substrate having a high dislocation region having a dislocation density of 1×105 cm−2 or more, a crystalline semiconductor structure located on the substrate and having an active layer, an insulating film located on the semiconductor structure, a surface electrode located on the insulating film and electrically continuous with the semiconductor structure for injection of a current into the active layer, and a back electrode located on a rear surface of the substrate. The semiconductor laser has a laser resonator with a length L, and the area of the surface electrode is 120×L μm2 or less.

摘要翻译： 通过减少通过穿透位错部分的电流泄漏，获得具有耐电源浪涌的高静电耐受电压并且具有改善的长期可靠性的半导体激光器。 半导体激光器包括具有位错密度为1×10 5 cm -2以上的高位错区域的基板，位于基板上并具有有源层的结晶半导体结构，位于半导体结构上的绝缘膜，表面 电极，位于绝缘膜上并与用于将电流注入有源层的半导体结构电连续，以及位于衬底的后表面上的背电极。 半导体激光器具有长度为L的激光谐振器，表面电极的面积为120×Lμm2以下。

公开(公告)号：US20100059790A1

公开(公告)日：2010-03-11

申请号：US12557145

申请日：2009-09-10

申请人： Kunio Takeuchi

发明人： Kunio Takeuchi

IPC分类号： H01L33/00 ,  H01L31/0224 ,  H01L31/0264 ,  H01L21/20

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L29/2003 ,  H01L29/452 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/0304 ,  H01L31/184 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0014 ,  H01S5/0202 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/2214 ,  Y02E10/544 ,  Y02P70/521

摘要： A nitride-based semiconductor device includes an n-type nitride-based semiconductor layer, and an n-side electrode having a first metal layer made of Al, formed on a surface of the n-type nitride-based semiconductor layer and a second metal layer made of Hf formed so as to cover a surface of the first metal layer on a side opposite to the n-type nitride-based semiconductor layer.

摘要翻译： 氮化物类半导体器件包括n型氮化物基半导体层和形成在n型氮化物基半导体层的表面上的具有由Al制成的第一金属层的n侧电极和第二金属 由Hf形成的层，以覆盖与n型氮化物基半导体层相反的一侧的第一金属层的表面。

公开(公告)号：US20100025701A1

公开(公告)日：2010-02-04

申请号：US12576813

申请日：2009-10-09

申请人： Takashi KANO ,  Masayuki HATA ,  Yasuhiko NOMURA

发明人： Takashi KANO ,  Masayuki HATA ,  Yasuhiko NOMURA

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/0075 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/0425 ,  H01S5/3063 ,  H01S2304/04 ,  H01S2304/12

摘要： A nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield and method of fabricating the same is described. The method of fabricating includes the steps of forming a groove portion on a nitride-based semiconductor substrate by selectively removing a prescribed region of a second region of the nitride-based semiconductor substrate other than a first region corresponding to a light-emitting portion of a nitride-based semiconductor layer up to a prescribed depth and forming the nitride-based semiconductor layer having a different composition from the nitride-based semiconductor substrate on the first region and the groove portion of the nitride-based semiconductor substrate.

摘要翻译： 描述了能够抑制特性降低和产量的氮化物半导体发光器件及其制造方法。 制造方法包括以下步骤：通过选择性地除去与氮化物基半导体衬底的发光部分相对应的第一区域以外的氮化物系半导体衬底的第二区域的规定区域，在氮化物系半导体衬底上形成沟槽部 氮化物基半导体层直到规定的深度，并且在氮化物基半导体衬底的第一区域和沟槽部分上形成具有与氮化物基半导体衬底不同的组成的氮化物基半导体层。