公开(公告)号：US20150144056A1

公开(公告)日：2015-05-28

申请号：US14087604

申请日：2013-11-22

申请人： SunEdison, Inc.

发明人： Tirumani N. Swaminathan ,  John David Hilker ,  Salvador Zepeda

IPC分类号： C30B15/12 ,  C30B15/00

CPC分类号： C30B15/12 ,  C30B11/002 ,  C30B15/002 ,  C30B29/06 ,  Y10T117/1052

摘要： A system for growing an ingot from a melt includes an outer crucible, an inner crucible, and a weir. The outer crucible includes a first sidewall and a first base. The first sidewall and the first base define an outer cavity for containing the melt. The inner crucible is located within the outer cavity, and has a central longitudinal axis. The inner crucible includes a second sidewall and a second base having an opening therein. The opening in the second base is concentric with the central longitudinal axis. The weir is disposed between the outer crucible and the inner crucible for supporting the inner crucible.

摘要翻译： 用于从熔体生长锭的系统包括外坩埚，内坩埚和堰。 外坩埚包括第一侧壁和第一基座。 第一侧壁和第一基座限定用于容纳熔体的外部空腔。 内坩埚位于外腔内，并具有中心纵轴。 内坩埚包括第二侧壁和在其中具有开口的第二基部。 第二基座中的开口与中心纵向轴线同心。 堰体设置在外坩埚和用于支撑内坩埚的内坩埚之间。

公开(公告)号：US20150114283A1

公开(公告)日：2015-04-30

申请号：US14522640

申请日：2014-10-24

申请人： Siemens Medical Solutions USA, Inc.

发明人： Mark S. Andreaco ,  James L. Corbeil ,  Brant Quinton ,  Troy Marlar ,  Ronald Nutt

IPC分类号： C30B15/00 ,  C30B15/30

CPC分类号： C30B15/00 ,  C30B13/285 ,  C30B15/28 ,  C30B15/30 ,  C30B15/32 ,  C30B29/34 ,  C30B35/00 ,  Y10T117/1004

摘要： A cantilever device for extending capacity of a scale used in a crystal growth apparatus having a pulling head wherein upward movement of a support column in the pulling head decreases a weight measured by the scale. The device includes a horizontal arm having first and second brackets, wherein the first bracket is attached to the pulling head. The device also includes a plate that extends through openings in the first and second brackets, wherein the plate includes a contact end and a free end. Further, the device includes a flexible element attached between the arm and the plate to form a pivot to enable rotation of the plate. A load is positioned on the plate wherein the load causes rotation of the plate about the pivot to cause upward movement of the contact end to move the support column upward to decrease weight measured by the scale.

摘要翻译： 一种悬臂装置，用于扩展在具有拉头的晶体生长装置中使用的刻度尺的容量，其中支撑柱在拉头中的向上运动降低了由刻度测量的重量。 该装置包括具有第一和第二支架的水平​​臂，其中第一支架附接到拉头。 该装置还包括延伸穿过第一和第二支架中的开口的板，其中板包括接触端和自由端。 此外，该装置包括附接在臂和板之间的柔性元件，以形成能够使板旋转的枢轴。 负载定位在板上，其中负载引起板绕枢轴的旋转，以引起接触端的向上运动，以向上移动支撑柱，以减小由刻度尺测量的重量。

公开(公告)号：US09005466B2

公开(公告)日：2015-04-14

申请号：US13583600

申请日：2011-03-09

申请人： Takayuki Hayashi ,  Toshimitsu Aruga ,  Makoto Matsukura ,  Yutaka Anzai ,  Akio Miyamoto ,  Sadao Matsumura ,  Yasunori Furukawa

发明人： Takayuki Hayashi ,  Toshimitsu Aruga ,  Makoto Matsukura ,  Yutaka Anzai ,  Akio Miyamoto ,  Sadao Matsumura ,  Yasunori Furukawa

IPC分类号： C30B29/30 ,  C30B33/02 ,  H01L41/08 ,  H01L41/18 ,  C30B29/22 ,  G01L9/08 ,  G01L23/10 ,  H01L41/113 ,  H01L41/187 ,  C30B15/00 ,  H01L41/41 ,  F02D35/02

CPC分类号： C30B29/22 ,  C30B15/00 ,  C30B33/02 ,  F02D35/023 ,  G01L9/08 ,  G01L23/10 ,  H01L41/1132 ,  H01L41/18 ,  H01L41/187 ,  H01L41/41

摘要： In accordance with the present invention, there is provided a method for producing a single LTGA crystal from a polycrystalline starting material prepared from a mixture of La2O3, Ta2O5, Ga2O3, and Al2O3, wherein a mixture having a composition represented by y(La2O3)+(1−x−y−z)(Ta2O5)+z(Ga2O3)+x(Al2O3) (in the formula, 0

摘要翻译： 根据本发明，提供了从由La 2 O 3，Ta 2 O 5，Ga 2 O 3和Al 2 O 3的混合物制备的多晶原料制备单个LTGA晶体的方法，其中具有由y（La 2 O 3）+ （1-x-y-z）（Ta 2 O 5）+ z（Ga 2 O 3）+ x（Al 2 O 3）（在式中，0

公开(公告)号：US08999281B2

公开(公告)日：2015-04-07

申请号：US12130179

申请日：2008-05-30

申请人： Yasushi Kurata ,  Naoaki Shimura ,  Tatsuya Usui

发明人： Yasushi Kurata ,  Naoaki Shimura ,  Tatsuya Usui

IPC分类号： C01F17/00 ,  C30B29/22 ,  C30B15/00 ,  C30B33/02 ,  C09K11/77

CPC分类号： C30B29/22 ,  C01F17/00 ,  C09K11/7774 ,  C30B15/00 ,  C30B33/02

摘要： The scintillator single crystal of the invention comprises a cerium-activated orthosilicate compound represented by the following general formula (1). The scintillator single crystal of the invention exhibits improved scintillation properties by reduced segregation between elements in the crystal ingot. Lm2−(x+y+z)LnxLuyCezSiO5  (1) (Wherein Lm represents at least one element selected from among Sc and Y and lanthanoid elements with lower atomic numbers than Lu, Ln represents at least one element selected from among Sc, Y, B, Al, Ga and In and lanthanoid elements with ion radii intermediate between Lm and Lu, x represents a value of greater than zero and no greater than 0.5, y represents a value of greater than 1 and less than 2, and z represents a value of greater than zero and no greater than 0.1.).

摘要翻译： 本发明的闪烁体单晶包含由以下通式（1）表示的铈活化的原硅酸盐化合物。 本发明的闪烁体单晶通过降低晶锭中的元素之间的偏析来显示改善的闪烁特性。 Lm2-（x + y + z）LnxLuyCezSiO5（1）（其中Lm表示选自Sc和Y中的至少一种元素，原子序数低于Lu的镧系元素，Ln表示选自Sc，Y， B，Al，Ga和In以及离子半径在Lm和Lu之间的镧系元素，x表示大于零且不大于0.5的值，y表示大于1且小于2的值，z表示 值大于零且不大于0.1）。

公开(公告)号：US08945293B2

公开(公告)日：2015-02-03

申请号：US13383298

申请日：2010-05-27

申请人： Takashi Higuchi ,  Tadahiko Horiuchi

发明人： Takashi Higuchi ,  Tadahiko Horiuchi

IPC分类号： B01D47/00 ,  C30B15/20 ,  C30B15/00 ,  C30B29/06 ,  C30B35/00 ,  F27B14/08 ,  F27D17/00

CPC分类号： C30B15/20 ,  C30B15/00 ,  C30B29/06 ,  C30B35/00 ,  F27B14/08 ,  F27D17/008

摘要： A silicon oxide removal apparatus for removing silicon oxide contained in an inert gas discharged from a silicon single crystal manufacturing apparatus, including at least: a contact means for bringing the inert gas discharged from the silicon single crystal manufacturing apparatus into contact with a strongly alkaline solution; and a neutralizing means for neutralizing an alkaline material contained in the inert gas brought into contact with the strongly alkaline solution. As a result, there is provided a silicon oxide removal apparatus and a facility for recycling an inert gas for use in a silicon single crystal manufacturing apparatus that can more effectively remove the silicon oxide contained in the inert gas discharged from the silicon single crystal manufacturing apparatus at low cost and enable recycle of the inert gas in which the silicon oxide has been effectively removed.

摘要翻译： 一种用于去除从单晶硅制造装置排出的惰性气体中所含的氧化硅的氧化硅去除装置，至少包括：将从硅单晶制造装置排出的惰性气体与强碱性溶液接触的接触装置 ; 以及用于中和与强碱性溶液接触的惰性气体中所含的碱性物质的中和装置。 结果，提供了一种氧化硅去除装置和用于再循环用于硅单晶制造装置中的惰性气体的设备，其可以更有效地去除从硅单晶制造装置排出的惰性气体中所含的氧化硅 并且能够使已经有效除去氧化硅的惰性气体再循环。

公开(公告)号：US20140326173A1

公开(公告)日：2014-11-06

申请号：US14362360

申请日：2012-05-15

申请人： Hideo Kato ,  Shinichi Kyufu ,  Masamichi Ohkubo

发明人： Hideo Kato ,  Shinichi Kyufu ,  Masamichi Ohkubo

IPC分类号： C30B15/00 ,  C30B15/10 ,  C30B15/02 ,  C30B30/04

CPC分类号： C30B15/005 ,  C30B15/02 ,  C30B15/10 ,  C30B29/06 ,  C30B30/04 ,  C30B35/002

摘要： Single crystal silicon ingots are grown by the multi-pulling method in a single crucible with minimization of dislocations by incorporating barium as a quartz crystallization inhibitor in amounts proportional to the diameter of the Czochralski crucible in which the crystal is grown. In at least one of the crystal pulling steps, a magnetic field is applied.

摘要翻译： 单晶硅锭通过多单元坩埚生长，通过将钡作为石英结晶抑制剂以与结晶生长的Czochralski坩埚的直径成比例的量，通过以最小的位错最小化，在单个坩埚中生长。 在至少一个晶体拉制步骤中，施加磁场。

公开(公告)号：US08858908B2

公开(公告)日：2014-10-14

申请号：US13220939

申请日：2011-08-30

申请人： Hirokazu Iwata

发明人： Hirokazu Iwata

IPC分类号： C01B15/12 ,  C01B17/66 ,  C01B21/06 ,  C23F11/04 ,  H01B1/02 ,  C30B9/00 ,  C30B13/00 ,  C30B15/00 ,  C30B29/40 ,  C30B9/10 ,  H01B1/06 ,  C30B29/38

CPC分类号： C30B29/406 ,  C01B21/0632 ,  C30B9/00 ,  C30B9/10 ,  C30B19/02 ,  C30B19/12 ,  C30B29/38 ,  C30B29/403 ,  H01B1/06 ,  H01L33/0075 ,  Y10T117/1068

摘要： A method of producing an n-type group III nitride single crystal includes putting raw materials that include at least a substance including a group III element, an alkali metal, and boron oxide into a reaction vessel; melting the boron oxide by heating the reaction vessel to a melting point of the boron oxide; forming a mixed melt which includes the group III element, the alkali metal, and the boron oxide, in the reaction vessel by heating the reaction vessel to a crystal growth temperature of a group III nitride; dissolving nitrogen into the mixed melt by bringing a nitrogen-containing gas into contact with the mixed melt; and growing an n-type group III nitride single crystal, which is doped with oxygen as a donor, from the group III element, the nitrogen, and oxygen in the boron oxide that are dissolved in the mixed melt.

摘要翻译： 制造n型III族氮化物单晶的方法包括将至少包含III族元素，碱金属和氧化硼的物质的原料放入反应容器中; 通过将反应容器加热至氧化硼的熔点来熔化氧化硼; 通过将反应容器加热至III族氮化物的晶体生长温度，在反应容器中形成包含III族元素，碱金属和氧化硼的混合熔体; 通过使含氮气体与混合熔体接触将氮气混合到混合熔体中; 并且从溶解在混合熔体中的氧化硼中的III族元素，氮和氧生长出掺杂有氧作为供体的n型III族氮化物单晶。

公开(公告)号：US08858706B2

公开(公告)日：2014-10-14

申请号：US13500536

申请日：2010-11-09

申请人： Toshiro Shimada ,  Kosei Sugawara

发明人： Toshiro Shimada ,  Kosei Sugawara

IPC分类号： C30B15/14 ,  C30B29/06 ,  C30B15/00

CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B15/14 ,  Y10T117/1032 ,  Y10T117/1068

摘要： A single-crystal manufacturing apparatus according to the Czochralski method, including: a crucible that contains a raw material; a main chamber configured to accommodate a heater for heating and melting the raw material; and a pulling chamber configured to pull and accommodate a grown single crystal, the pulling chamber being continuously provided above the main chamber; an inner shield provided between the heater and the main chamber and for insulating heat radiated from the heater, and a supporting member for supporting the inner shield from below. The inner shield is supported at three or more supporting points contacting the supporting member, and a lower end of the inner shield except at the supporting points does not contact the supporting member.

摘要翻译： 根据切克劳斯基法的单晶体制造装置，包括：含有原料的坩埚; 主室，其构造成容纳用于加热和熔化原料的加热器; 以及拉动室，其构造成拉伸和容纳生长的单晶，所述拉动室连续地设置在所述主室上方; 设置在加热器和主室之间并且用于绝热从加热器辐射的热的内屏蔽件，以及用于从下方支撑内屏蔽的支撑构件。 内护罩支撑在与支撑构件接触的三个以上的支撑点处，除了支撑点之外，内护罩的下端不接触支撑构件。

公开(公告)号：US08828139B2

公开(公告)日：2014-09-09

申请号：US13161170

申请日：2011-06-15

申请人： Masato Imai ,  Kouzou Nakamura

发明人： Masato Imai ,  Kouzou Nakamura

IPC分类号： C30B15/36 ,  C30B15/00

CPC分类号： C30B15/00 ,  C30B15/36 ,  C30B29/20 ,  G02B1/02

摘要： Methods of manufacturing a sapphire seed for growing a crystal having reduced dislocation density. The present invention provides a method of manufacturing a sapphire seed formed by a sapphire single crystal and used for growing another sapphire single crystal on a (0001) face as a crystal growing surface, the method comprising: preparing a sapphire seed whose side face forms a crystal face within a {1-100} face±10 °, and whose shape is processed so as to include a hexagonal prism or a triangle prism; and applying a predetermined thermal treatment to said sapphire seed.

摘要翻译： 制造用于生长具有降低的位错密度的晶体的蓝宝石种子的方法。 本发明提供一种制造由蓝宝石单晶形成的蓝宝石种子的方法，用于在（0001）面上生长另一蓝宝石单晶作为晶体生长面，该方法包括：制备其侧面形成蓝宝石种子 {1-100}面±10°内的晶面，其形状被加工成包括六棱柱或三角棱镜; 以及对所述蓝宝石种子进行预定的热处理。

公开(公告)号：US20140174338A1

公开(公告)日：2014-06-26

申请号：US14134861

申请日：2013-12-19

申请人： SunEdison, Inc.

发明人： Richard J. Phillips ,  Shailendra B. Rathod

IPC分类号： C30B15/12 ,  C03B23/20 ,  C30B15/00

CPC分类号： C30B15/12 ,  C03B23/20 ,  C03C27/06 ,  C03C2217/213 ,  C30B15/002 ,  C30B15/20 ,  C30B29/06 ,  Y10T117/1052

摘要： A method of bonding a first silica part to a second silica part includes coating contacting surfaces of the first and second silica parts with a solution having one of silica and silica precursors. The coated surfaces of the first silica part are placed adjacent to the coated surfaces of the second silica part to form an assembly, and the assembly is heated.

摘要翻译： 将第一二氧化硅部分结合到第二二氧化硅部分的方法包括第一和第二二氧化硅部分的涂层接触表面与具有二氧化硅和二氧化硅前体之一的溶液。 第一二氧化硅部分的涂覆表面被放置成与第二二氧化硅部分的涂覆表面相邻以形成组件，并且组件被加热。