公开(公告)号：US20130126476A1

公开(公告)日：2013-05-23

申请号：US13420949

申请日：2012-03-15

Applicant: Alexei Marakhtanov ,  Rajinder Dhindsa ,  Ryan Bise ,  Lumin Li ,  Sang Ki Nam ,  Jim Rogers ,  Eric Hudson ,  Gerardo Delgadino ,  Andrew D. Bailey, III ,  Mike Kellogg ,  Anthony de la LIera

Inventor： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Ryan Bise ,  Lumin Li ,  Sang Ki Nam ,  Jim Rogers ,  Eric Hudson ,  Gerardo Delgadino ,  Andrew D. Bailey, III ,  Mike Kellogg ,  Anthony de la LIera

IPC: C23F1/00 ,  C23F1/08

CPC classification number: H01J37/32642 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32724 ,  H01L21/67109

Abstract: A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber.

Abstract translation: 等离子体处理的系统和方法包括等离子体室，其包括基板支撑件和与基板支撑件相对的上电极，上电极具有多个同心温度控制区域和耦合到等离子体室的控制器。

公开(公告)号：US20130059448A1

公开(公告)日：2013-03-07

申请号：US13227404

申请日：2011-09-07

Applicant: Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

Inventor： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

IPC: H01L21/3065 ,  H01L21/306 ,  C23F1/08

Abstract: Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to set parameters to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF period, and to assist in the re-striking of the bottom plasma during the ON period.

Abstract translation: 提供了用于在脉冲等离子体室中处理衬底的实施例。 具有两个腔室的处理装置，由流体连接腔室的板分开，包括连续波（CW）控制器，脉冲控制器和系统控制器。 CW控制器设置耦合到顶部电极的第一射频（RF）电源的电压和频率。 脉冲控制器可操作地为耦合到底部电极的第二RF电源产生的脉冲RF信号设置电压，频率，接通周期持续时间和关闭周期持续时间。 系统控制器可操作以设定参数以调节室之间的物质流动，以辅助负离子蚀刻，以在关闭期间中止余辉期间晶片表面上的过多正电荷，并且辅助重击 在ON期间的底部等离子体。

公开(公告)号：US20120305189A1

公开(公告)日：2012-12-06

申请号：US13584646

申请日：2012-08-13

Applicant: KeeChan Kim ,  Yunsang Kim ,  Andrew D. Bailey, III

Inventor： KeeChan Kim ,  Yunsang Kim ,  Andrew D. Bailey, III

IPC: C23F1/08

CPC classification number: H01L21/67069 ,  G01N21/68 ,  H01L21/67028 ,  H01L21/67253

Abstract: A method for detecting plasma unconfinement in a reaction chamber during a bevel edge cleaning operation is provided. The method initiates with selecting a wavelength associated with expected by products of a bevel edge clean process. The method includes cleaning the bevel edge area of a substrate and monitoring the intensity of the selected wavelengths during the cleaning for deviation from a threshold wavelength intensity. The cleaning is terminated if the deviation from the threshold wavelength intensity exceeds a target deviation.

Abstract translation: 提供了一种用于在斜边清洁操作期间检测反应室中的等离子体无约束的方法。 该方法通过选择与倾斜边缘清洁过程的产品预期相关联的波长来启动。 该方法包括清洁衬底的斜边缘区域并在清洁期间监测所选波长的强度以偏离阈值波长强度。 如果偏离阈值波长强度超过目标偏差，则清除结束。

公开(公告)号：US08298433B2

公开(公告)日：2012-10-30

申请号：US12648264

申请日：2009-12-28

Applicant: Hyungsuk Alexander Yoon ,  Yunsang Kim ,  Jason A. Ryder ,  Andrew D. Bailey, III

Inventor： Hyungsuk Alexander Yoon ,  Yunsang Kim ,  Jason A. Ryder ,  Andrew D. Bailey, III

IPC: C23F1/00 ,  H01L21/3065 ,  C23C16/505

CPC classification number: H01L21/02087 ,  H01J37/32541 ,  H01J37/3255 ,  H05H1/2406 ,  H05H2001/2412

Abstract: A method for generating plasma for removing an edge polymer from a substrate is provided. The method includes providing a powered electrode assembly, which includes a powered electrode, a dielectric layer, and a wire mesh disposed between the powered electrode and the dielectric layer. The method also includes providing a grounded electrode assembly disposed opposite the powered electrode assembly to form a cavity wherein the plasma is generated. The wire mesh is shielded from the plasma by the dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the edge polymer. The method further includes introducing at least one inert gas and at least one process gas into the cavity. The method yet also includes applying an RF field to the cavity using the powered electrode to generate the plasma from the inert gas and process gas.

Abstract translation: 提供了一种用于从衬底除去边缘聚合物的等离子体的方法。 该方法包括提供一种动力电极组件，其包括供电电极，电介质层和布置在电源电极和电介质层之间的金属丝网。 该方法还包括提供与动力电极组件相对设置的接地电极组件，以形成其中产生等离子体的空腔。 当等离子体存在于空腔中时，金属丝网通过电介质层被屏蔽，等离子体在一端具有出口，用于提供等离子体以去除边缘聚合物。 该方法还包括将至少一种惰性气体和至少一种工艺气体引入空腔中。 该方法还包括使用动力电极将RF场施加到空腔，以从惰性气体和处理气体产生等离子体。

公开(公告)号：US20120214310A1

公开(公告)日：2012-08-23

申请号：US13029824

申请日：2011-02-17

Applicant: Ben-Li Sheu ,  Rajinder Dhindsa ,  Vinay Pohray ,  Eric A. Husdon ,  Andrew D. Bailey, III

Inventor： Ben-Li Sheu ,  Rajinder Dhindsa ,  Vinay Pohray ,  Eric A. Husdon ,  Andrew D. Bailey, III

IPC: H01L21/311 ,  C23F1/08

CPC classification number: H01L21/31116 ,  H01L21/31144

Abstract: A method for etching features in an etch layer. A conditioning for a patterned pseudo-hardmask of amorphous carbon or polysilicon disposed over the etch layer is provided, where the conditioning comprises providing a fluorine free deposition gas comprising a hydrocarbon gas, forming a plasma from the fluorine free deposition gas, providing a bias less than 500 volts, and forming a deposition on top of the patterned pseudo-hardmask. The etch layer is etched through the patterned pseudo-hardmask.

Abstract translation: 一种用于蚀刻蚀刻层中的特征的方法。 提供了一种用于设置在蚀刻层上的非晶碳或多晶硅的图案化伪硬掩模的调理，其中调节包括提供包含烃气体的无氟沉积气体，从无氟沉积气体形成等离子体， 超过500伏，并且在图案化伪硬掩模的顶部上形成沉积物。 蚀刻层通过图案化伪硬掩模进行蚀刻。

公开(公告)号：US20120074099A1

公开(公告)日：2012-03-29

申请号：US13300483

申请日：2011-11-18

Applicant: Tong Fang ,  Yunsang Kim ,  Andrew D. Bailey, III ,  Olivier Rigoutat ,  George Stojakovic

Inventor： Tong Fang ,  Yunsang Kim ,  Andrew D. Bailey, III ,  Olivier Rigoutat ,  George Stojakovic

IPC: C23F1/00

CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J2237/3341 ,  H01L21/02087

Abstract: Methods for bevel edge etching are provided. One example method is for etching a film on a bevel edge of a substrate in a plasma etching chamber. The method includes providing the substrate on a substrate support in the plasma etching chamber. The plasma etching chamber has a top edge electrode and a bottom edge electrode disposed to surround the substrate support. Then flowing an etching process gas through a plurality of edge gas feeds disposed along a periphery of the gas delivery plate. The periphery of the gas deliver plate is oriented above the substrate support and the bevel edge of the substrate, and the flowing is further directed to a space between the top edge electrode and bottom edge electrode. And, flowing a tuning gas through a center gas feed of the gas delivery plate.

Abstract translation: 提供斜边蚀刻方法。 一种示例性方法是在等离子体蚀刻室中蚀刻衬底的斜边缘上的膜。 该方法包括将基板设置在等离子体蚀刻室中的基板支撑件上。 等离子体蚀刻室具有顶部边缘电极和设置成围绕基板支撑件的底部边缘电极。 然后使蚀刻处理气体流过沿着气体输送板的周边布置的多个边缘气体进料。 气体输送板的周边定位在基板支撑件和基板的斜边缘上方，并且流动进一步被引导到顶部边缘电极和底部边缘电极之间的空间。 并且，使调谐气体流过气体输送板的中心气体进料。

公开(公告)号：US07981307B2

公开(公告)日：2011-07-19

申请号：US11866392

申请日：2007-10-02

Applicant: Jack Chen ,  Andrew D. Bailey, III ,  Iqbal Shareef

Inventor： Jack Chen ,  Andrew D. Bailey, III ,  Iqbal Shareef

IPC: B44C1/22 ,  H01L21/00

CPC classification number: H01L21/02087 ,  C23C16/455 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/6708

Abstract: A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method further includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.

Abstract translation: 提供了一种用于在处理室中蚀刻衬底的斜边缘的方法。 该方法包括将惰性气体流入位于衬底的中心区域上方的处理室的中心区域，并将惰性气体和处理气体的混合物流过衬底的边缘区域。 该方法还包括在边缘区域中打击等离子体，其中惰性气体的流动和混合物的流动维持处理气体的质量分数基本恒定。 还提供了一种构造成清洁基板的斜边缘的处理室。

公开(公告)号：US07938931B2

公开(公告)日：2011-05-10

申请号：US11758576

申请日：2007-06-05

Applicant: Gregory S. Sexton ,  Andrew D. Bailey, III ,  Andras Kuthi

Inventor： Gregory S. Sexton ,  Andrew D. Bailey, III ,  Andras Kuthi

IPC: H01L21/306 ,  C23F1/00

CPC classification number: H01L21/02087 ,  B08B7/0035 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32541 ,  H01L21/67069

Abstract: The embodiments provide structures and mechanisms for removal of etch byproducts, dielectric films and metal films on and near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a bottom electrode configured to receive the substrate, wherein the bottom electrode is coupled to a radio frequency (RF) power supply. The plasma processing chamber also includes a top edge electrode surrounding an insulating plate opposing the bottom electrode. The top edge electrode is electrically grounded. The plasma processing chamber further includes a bottom edge electrode surrounding the bottom electrode. The bottom edge electrode opposes the top edge electrode. The top edge electrode, the substrate disposed on the bottom electrode, and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The bottom edge electrode and the bottom electrode are electrically coupled to one another through an RF circuit tunable to adjust the amount of RF current going between the substrate disposed on the bottom electrode, the bottom edge electrode and the top edge electrode.

Abstract translation: 这些实施例提供用于去除基板斜边缘上和附近的蚀刻副产物，电介质膜和金属膜的结构和机构，以及室内，以避免聚合物副产物和沉积膜的积聚并提高工艺产率。 在示例性实施例中，提供了构造成清洁基板的斜边缘的等离子体处理室。 等离子体处理室包括被配置为接收衬底的底部电极，其中底部电极耦合到射频（RF）电源。 等离子体处理室还包括围绕与底部电极相对的绝缘板的顶部边缘电极。 顶边电极电接地。 等离子体处理室还包括围绕底部电极的底部边缘电极。 底边电极与顶边缘电极相对。 上边缘电极，设置在底部电极上的基板和底部边缘电极被配置为产生清洁等离子体以清洁基板的斜边缘。 底边电极和底电极通过可调谐的RF电路彼此电耦合，以调节在设置在底部电极，底部边缘电极和顶部边缘电极之间的衬底之间的RF电流的量。

公开(公告)号：US07909960B2

公开(公告)日：2011-03-22

申请号：US11440561

申请日：2006-05-24

Applicant: Yunsang Kim ,  Andrew D. Bailey, III

Inventor： Yunsang Kim ,  Andrew D. Bailey, III

IPC: C23F1/00 ,  H01L21/306

CPC classification number: H01J37/32532 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32862

Abstract: Improved mechanisms of removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and etch byproducts on substrate backside and chamber interior is provided to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. An exemplary plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode surrounding a substrate support in the plasma processing chamber, wherein the substrate support is configured to receive the substrate and the bottom edge electrode and the substrate support are electrically isolated from each other by a bottom dielectric ring. The chamber also includes a top edge electrode surrounding a gas distribution plate opposing the substrate support, wherein the top edge electrode and the gas distribution plate are electrically isolated from each other by a top dielectric ring, and the top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate.

Abstract translation: 提供了去除蚀刻副产物，电介质膜和金属薄膜附近基板斜边缘的改进机理，以及衬底背面和腔室内部的蚀刻副产物，以避免聚合物副产物和沉积膜的堆积并提高工艺产率。 提供了一种构造成清洁衬底的斜边缘的示例性等离子体蚀刻处理室。 所述腔室包括围绕所述等离子体处理室中的衬底支撑件的底部边缘电极，其中所述衬底支撑件构造成接收所述衬底，并且所述底部边缘电极和所述衬底支撑件通过底部电介质环彼此电隔离。 该室还包括围绕与衬底支撑件相对的气体分配板的顶部边缘电极，其中顶部边缘电极和气体分配板通过顶部介电环彼此电隔离，并且顶部边缘电极和底部边缘电极 被配置为产生清洁等离子体以清洁基板的斜边缘。

公开(公告)号：US07691278B2

公开(公告)日：2010-04-06

申请号：US11237477

申请日：2005-09-27

Applicant: Hyungsuk Alexander Yoon ,  John Boyd ,  Andras Kuthi ,  Andrew D. Bailey, III

Inventor： Hyungsuk Alexander Yoon ,  John Boyd ,  Andras Kuthi ,  Andrew D. Bailey, III

IPC: H01L21/302

CPC classification number: H01L21/02087 ,  B08B7/0035

Abstract: An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the fluorinated polymer.

Abstract translation: 公开了一种从衬底生成用于除去氟化聚合物的等离子体的装置。 该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。 该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一金属丝网被第一介电层与等离子体屏蔽， 空腔在一端具有出口，用于提供等离子体以除去氟化聚合物。