Delay circuit having variable slope control and threshold detect
    81.
    发明授权
    Delay circuit having variable slope control and threshold detect 有权
    具有可变斜率控制和阈值检测的延迟电路

    公开(公告)号:US06366149B1

    公开(公告)日:2002-04-02

    申请号:US09649389

    申请日:2000-08-28

    CPC classification number: H03K5/13

    Abstract: A delay circuit in accordance with the present invention provides high-resolution changes in the time delay by utilizing a slope controller that generates an intermediate signal having sloping edges in response to edges in an input signal. A delay time controller generates an output signal having edges that begin when the level of the intermediate signal reaches a certain level. The overall time delay of the delay circuit can be varied by varying the slope of the edges of the intermediate signal, or by varying the level of the intermediate signal at which the delay time controller begins generating an edge in the output signal, or by varying both parameters. The slope controller and delay time controller can be realized with a plurality of tri-state inverters coupled in parallel for operating responsive to one or more select signals. By implementing the inverters with pull-up and pull-down transistors having different sizes, the overall time delay can be varied with very high resolution.

    Abstract translation: 根据本发明的延迟电路通过利用产生具有响应于输入信号中的边缘的倾斜边缘的中间信号的斜率控制器来提供时间延迟中的高分辨率变化。 延迟时间控制器产生具有当中间信号的电平达到一定水平时开始的边沿的输出信号。 可以通过改变中间信号的边沿的斜率,或通过改变延迟时间控制器开始在输出信号中产生边沿的中间信号的电平,或者通过改变延迟电路的整个时间延迟 两个参数。 斜率控制器和延迟时间控制器可以通过多个并联耦合的三态反相器来实现,以响应于一个或多个选择信号进行操作。 通过用具有不同尺寸的上拉和下拉晶体管实现逆变器,总体时间延迟可以以非常高的分辨率变化。

    Weight sensing device for a microwave oven
    82.
    发明授权
    Weight sensing device for a microwave oven 有权
    微波炉重量感应装置

    公开(公告)号:US6091029A

    公开(公告)日:2000-07-18

    申请号:US200849

    申请日:1998-11-30

    Applicant: Jong-Cheol Lee

    Inventor: Jong-Cheol Lee

    CPC classification number: G01G19/56

    Abstract: A weight sensing device for a microwave oven. The device has a fixing bracket having a bottom wall defined by a depress portion and a pair of protuberance portions which are provided at both ends of the depress portion and vertically ascending therefrom, and a pair of side walls which are integrally formed with side ends of the pair of protuberance portions and upwardly extending therefrom, a printed circuit board rested on the depress portion of the fixing bracket and provided at an upper surface thereof with a fixed electrode plate, an elastically movable electrode plate which is supported on the protuberance portions in a form of a fixed beam such that a predetermined gap is formed between the fixed electrode plate and the elastically movable electrode plate, a motor assembly which is mounted on an upper portion of the fixing bracket and is rotatably supporting a tray in which articles are placed, and a microcomputer determining the weight of articles based on the capacitance value. The motor assembly elastically descends the elastically movable electrode plate in proportional to a weight of articles, thereby varying a capacitance value. The device has a simple construction and can accurately measure the weight of the foodstuffs.

    Abstract translation: 微波炉重量检测装置。 该装置具有固定支架,该固定支架具有由下压部分限定的底壁和一对突出部分,所述突出部分设置在所述按压部分的两端并从其垂直上升;以及一对侧壁, 一对突起部分并向上延伸,印刷电路板搁置在固定支架的下压部分上,并在其上表面设置有固定电极板,弹性可移动的电极板,其以一个支撑在突出部分上的 固定光束的形式,使得在固定电极板和可弹性移动的电极板之间形成预定的间隙;电动机组件,其安装在固定支架的上部并且可旋转地支撑放置物品的托盘; 以及基于电容值确定物品的重量的微型计算机。 电动机组件与制品的重量成比例地弹性地下降可弹性移动的电极板,从而改变电容值。 该设备结构简单,能准确测量食品的重量。

    GAS INJECTION APPARATUS AND THIN FILM DEPOSITION EQUIPMENT INCLUDING THE SAME
    83.
    发明申请
    GAS INJECTION APPARATUS AND THIN FILM DEPOSITION EQUIPMENT INCLUDING THE SAME 审中-公开
    气体注入装置和薄膜沉积装置,包括它们

    公开(公告)号:US20160060759A1

    公开(公告)日:2016-03-03

    申请号:US14835082

    申请日:2015-08-25

    Abstract: A gas injection apparatus, which can sequentially supply a substrate with at least two kinds of source gases reacting with each other in a container, and thin film deposition equipment including the gas injection apparatus, are provided. The gas injection apparatus includes a base plate, a first gas supply region protruding from the base plate, a second gas supply region protruding from the base plate and adjacent the first gas supply region, and a trench defined by a sidewall of the first gas supply region and a sidewall of the second gas supply region. The sidewall of the first gas supply region and the sidewall of the second gas supply region face each other and extend in a radial direction on the base plate.

    Abstract translation: 一种气体注入装置,其可以在容器中顺序地供给具有彼此反应的至少两种源气体的基板和包括该气体注入装置的薄膜沉积设备。 气体注入装置包括基板,从基板突出的第一气体供应区域,从基板突出并邻近第一气体供应区域的第二气体供应区域和由第一气体供应源的侧壁限定的沟槽 区域和第二气体供应区域的侧壁。 第一气体供给区域的侧壁和第二气体供给区域的侧壁彼此面对并且在基板上沿径向方向延伸。

    Semiconductor Device Including Insulating Layer of Cubic System or Tetragonal System
    85.
    发明申请
    Semiconductor Device Including Insulating Layer of Cubic System or Tetragonal System 有权
    包括立方体或四边形系统的绝缘层的半导体器件

    公开(公告)号:US20120168904A1

    公开(公告)日:2012-07-05

    申请号:US13418472

    申请日:2012-03-13

    Abstract: Provided is a semiconductor device including an insulating layer of a cubic system or a tetragonal system, having good electrical characteristics. The semiconductor device includes a semiconductor substrate including an active region, a transistor that is formed in the active region of the semiconductor substrate, an interlevel insulating layer that is formed on the semiconductor substrate and a contact plug that is formed in the interlevel insulating layer and that is electrically connected to the transistor. The semiconductor device may include a lower electrode that is formed on the interlevel insulating layer and that is electrically connected to the contact plug, an upper electrode that is formed on the lower electrode and an insulating layer of a cubic system or a tetragonal system including a metal silicate layer. The insulating layer may be formed between the lower electrode and the upper electrode.

    Abstract translation: 本发明提供一种半导体器件,其具有立方晶系或四方晶系的绝缘层,具有良好的电特性。 半导体器件包括:半导体衬底,包括有源区,形成在半导体衬底的有源区中的晶体管,形成在半导体衬底上的层间绝缘层和形成在层间绝缘层中的接触插塞;以及 其电连接到晶体管。 半导体器件可以包括形成在层间绝缘层上并且与电性连接的接触插塞的下电极,形成在下电极上的上电极和立方体系的绝缘层或包括 金属硅酸盐层。 绝缘层可以形成在下电极和上电极之间。

    Semiconductor device including insulating layer of cubic system or tetragonal system
    86.
    发明授权
    Semiconductor device including insulating layer of cubic system or tetragonal system 有权
    半导体器件包括立方体或四方晶系的绝缘层

    公开(公告)号:US08159012B2

    公开(公告)日:2012-04-17

    申请号:US12238822

    申请日:2008-09-26

    Abstract: Provided is a semiconductor device including an insulating layer of a cubic system or a tetragonal system, having good electrical characteristics. The semiconductor device includes a semiconductor substrate including an active region, a transistor that is formed in the active region of the semiconductor substrate, an interlevel insulating layer that is formed on the semiconductor substrate and a contact plug that is formed in the interlevel insulating layer and that is electrically connected to the transistor. The semiconductor device may include a lower electrode that is formed on the interlevel insulating layer and that is electrically connected to the contact plug, an upper electrode that is formed on the lower electrode and an insulating layer of a cubic system or a tetragonal system including a metal silicate layer. The insulating layer may be formed between the lower electrode and the upper electrode.

    Abstract translation: 本发明提供一种半导体器件,其具有立方晶系或四方晶系的绝缘层,具有良好的电特性。 半导体器件包括:半导体衬底,包括有源区,形成在半导体衬底的有源区中的晶体管,形成在半导体衬底上的层间绝缘层和形成在层间绝缘层中的接触插塞;以及 其电连接到晶体管。 半导体器件可以包括形成在层间绝缘层上并且与电性连接的接触插塞的下电极,形成在下电极上的上电极和立方体系的绝缘层或包括 金属硅酸盐层。 绝缘层可以形成在下电极和上电极之间。

    METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING MULTILAYER DIELECTRIC LAYERS
    87.
    发明申请
    METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING MULTILAYER DIELECTRIC LAYERS 有权
    制造包含多层介质层的半导体器件的方法

    公开(公告)号:US20110230056A1

    公开(公告)日:2011-09-22

    申请号:US13019636

    申请日:2011-02-02

    CPC classification number: H01L28/40 H01L27/1085 H01L27/11568

    Abstract: Methods of manufacturing semiconductor devices including multilayer dielectric layers are disclosed. The methods include forming a multilayer dielectric layer including metal atoms and silicon atoms on a semiconductor substrate. The multilayer dielectric layer includes at least two crystalline metal silicate layers having different silicon concentrations. The multilayer dielectric layer may be used, for example, as a dielectric layer for a capacitor, or as a blocking layer for a nonvolatile memory device.

    Abstract translation: 公开了制造包括多层电介质层的半导体器件的方法。 所述方法包括在半导体衬底上形成包括金属原子和硅原子的多层电介质层。 多层介电层包括至少两个具有不同硅浓度的结晶金属硅酸盐层。 多层介电层可以用作电容器的介质层,也可以用作非易失性存储器件的阻挡层。

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