Abstract:
A delay circuit in accordance with the present invention provides high-resolution changes in the time delay by utilizing a slope controller that generates an intermediate signal having sloping edges in response to edges in an input signal. A delay time controller generates an output signal having edges that begin when the level of the intermediate signal reaches a certain level. The overall time delay of the delay circuit can be varied by varying the slope of the edges of the intermediate signal, or by varying the level of the intermediate signal at which the delay time controller begins generating an edge in the output signal, or by varying both parameters. The slope controller and delay time controller can be realized with a plurality of tri-state inverters coupled in parallel for operating responsive to one or more select signals. By implementing the inverters with pull-up and pull-down transistors having different sizes, the overall time delay can be varied with very high resolution.
Abstract:
A weight sensing device for a microwave oven. The device has a fixing bracket having a bottom wall defined by a depress portion and a pair of protuberance portions which are provided at both ends of the depress portion and vertically ascending therefrom, and a pair of side walls which are integrally formed with side ends of the pair of protuberance portions and upwardly extending therefrom, a printed circuit board rested on the depress portion of the fixing bracket and provided at an upper surface thereof with a fixed electrode plate, an elastically movable electrode plate which is supported on the protuberance portions in a form of a fixed beam such that a predetermined gap is formed between the fixed electrode plate and the elastically movable electrode plate, a motor assembly which is mounted on an upper portion of the fixing bracket and is rotatably supporting a tray in which articles are placed, and a microcomputer determining the weight of articles based on the capacitance value. The motor assembly elastically descends the elastically movable electrode plate in proportional to a weight of articles, thereby varying a capacitance value. The device has a simple construction and can accurately measure the weight of the foodstuffs.
Abstract:
A gas injection apparatus, which can sequentially supply a substrate with at least two kinds of source gases reacting with each other in a container, and thin film deposition equipment including the gas injection apparatus, are provided. The gas injection apparatus includes a base plate, a first gas supply region protruding from the base plate, a second gas supply region protruding from the base plate and adjacent the first gas supply region, and a trench defined by a sidewall of the first gas supply region and a sidewall of the second gas supply region. The sidewall of the first gas supply region and the sidewall of the second gas supply region face each other and extend in a radial direction on the base plate.
Abstract:
The present invention relates to a pyrene-containing conductive polymer represented by formula 1 and an organic solar cell comprising the same as an organic photovoltaic material. The conductive polymer has improved hole mobility as a result of introducing a specific amount of pyrene either into a polymer, which consists only of a donor functional group comprising one or more aromatic monomers, or into a donor-acceptor type polymer comprising a repeating acceptor introduced into a donor functional group. Thus, the conductive polymer can be used as an organic photovoltaic material in organic photodiodes (OPDs), organic light-emitting diodes (OLEDs), organic thin-film transistors (OTFTs), organic solar cells and the like. In addition, an organic solar cell showing high power conversion efficiency (PCE) can be provided using an organic photovoltaic material comprising the pyrene-containing conductive polymer as an electron donor.
Abstract:
Provided is a semiconductor device including an insulating layer of a cubic system or a tetragonal system, having good electrical characteristics. The semiconductor device includes a semiconductor substrate including an active region, a transistor that is formed in the active region of the semiconductor substrate, an interlevel insulating layer that is formed on the semiconductor substrate and a contact plug that is formed in the interlevel insulating layer and that is electrically connected to the transistor. The semiconductor device may include a lower electrode that is formed on the interlevel insulating layer and that is electrically connected to the contact plug, an upper electrode that is formed on the lower electrode and an insulating layer of a cubic system or a tetragonal system including a metal silicate layer. The insulating layer may be formed between the lower electrode and the upper electrode.
Abstract:
Provided is a semiconductor device including an insulating layer of a cubic system or a tetragonal system, having good electrical characteristics. The semiconductor device includes a semiconductor substrate including an active region, a transistor that is formed in the active region of the semiconductor substrate, an interlevel insulating layer that is formed on the semiconductor substrate and a contact plug that is formed in the interlevel insulating layer and that is electrically connected to the transistor. The semiconductor device may include a lower electrode that is formed on the interlevel insulating layer and that is electrically connected to the contact plug, an upper electrode that is formed on the lower electrode and an insulating layer of a cubic system or a tetragonal system including a metal silicate layer. The insulating layer may be formed between the lower electrode and the upper electrode.
Abstract:
Methods of manufacturing semiconductor devices including multilayer dielectric layers are disclosed. The methods include forming a multilayer dielectric layer including metal atoms and silicon atoms on a semiconductor substrate. The multilayer dielectric layer includes at least two crystalline metal silicate layers having different silicon concentrations. The multilayer dielectric layer may be used, for example, as a dielectric layer for a capacitor, or as a blocking layer for a nonvolatile memory device.
Abstract:
An electronic device includes a lower layer, a complex dielectric layer on the lower layer, and an upper layer on the complex dielectric layer. The complex dielectric layer includes an amorphous metal silicate layer and a crystalline metal-based insulating layer thereon. Related fabrication methods are also discussed.
Abstract:
The present invention provides an N1-benzo[1,3]dioxol-5-ylmethyl-N2-substituted biguanide derivative of formula (I) or a pharmaceutically acceptable salt thereof, a method for preparing same, and a pharmaceutical composition comprising same as an active ingredient. The inventive N1-benzo[1,3]dioxol-5-ylmethyl-N2-substituted biguanide derivative exhibits improved blood glucose level- and lipid level-lowering effects even with a reduced dosage as compared to conventional drugs, and thus, it is useful for preventing or treating diabetes, metabolic syndromes such as insulin-independent diabetes, obesity and atherosclerosis, or a P53 gene defect-related cancer.
Abstract:
A multi-dielectric film including at least one first dielectric film that is a composite film made of zirconium-hafnium-oxide and at least one second dielectric film that is a metal oxide film made of amorphous metal oxide. Adjacent ones of the dielectric films are made of different materials.