摘要:
Disclosed is a portable terminal, including, a first conductor formed on one surface of a board and having a contact surface, a second conductor formed at an outer periphery of the first conductor and having a support surface, and a metal dome supported by the support surface and transformed responsive to a key being pressed so as to contact the contact surface, wherein the contact surface is located at a position lower than the support surface so as to increase a transformation stroke of the metal dome.
摘要:
A head set device includes an antenna housing, a speaker housing connected to the antenna housing while protruding from one face of the antenna housing, and a hinge device for rotatably combining the speaker housing to the antenna housing. The speaker housing rotates with respect to a rotation axis that extends outwardly from one face of the antenna housing. The antenna housing and the speaker housing are rotatably connected together using a hinge device, thereby allowing the user to selectively wear the head set device on either ear and thus facilitating the use of the head set device. Moreover, by including the sensing means and the signal generating means to sense the position of the speaker housing and generate the holding signal, the operation of the head set device may be prevented even if there is unintentional key manipulation during a user's carrying of the head set device, thereby preventing unnecessary consumption of the storage battery and thus allowing the efficient use of the storage battery having a limited capacity.
摘要:
A display device includes a liquid crystal module to display an image at a front surface thereof, a cover to encase at least a portion of the liquid crystal module, and at least one fastening unit to couple the cover to the liquid crystal module, wherein the fastening unit is provided at a rear surface of the liquid crystal module.
摘要:
Methods of forming integrated circuit devices include forming a field effect transistor having a gate electrode, a sacrificial spacer on a sidewall of the gate electrode and silicided source/drain regions. The sacrificial spacer is used as an implantation mask when forming highly doped portions of the source/drain regions. The sacrificial spacer is then removed from the sidewall of the gate electrode. A stress-inducing electrically insulating layer, which is configured to induce a net tensile stress (for NMOS transistors) or compressive stress (for PMOS transistors) in a channel region of the field effect transistor, is then formed on the sidewall of the gate electrode.
摘要:
Provided is a method for recovering high-concentration and high-purity amine from amine-containing waste water generated from nuclear power plants and thermal power plants. The method includes: capturing amine and concentrating waste water using a cation exchange resin; separating amine from the concentrated amine-containing waste water; and carrying out further separation of amine via distillation. The method may be applied to treat amine, which causes an increase in biochemical oxygen demand (BOD) and total nitrogen concentration, drastically at the time of its generation from waste water of nuclear power plants and thermal power plants. In this manner, the method may prevent an increase in load of existing waste water treating plants and avoid a need for modifying the equipment in the existing plants. In addition, the method disclosed herein may allow recovery and reutilization of amine, injected continuously to prevent corrosion of water/vapor circulation systems of nuclear power plants and thermal power plants, thereby improving the cost-efficiency in such power plants.
摘要:
A monitor has a monitor main body and a base member to support the monitor main body. The monitor includes a link member disposed between the monitor main body and the base member, a base hinge coupling the link member, which is to be rotated within a predetermined angle against the base member, with the base member, and a monitor hinge coupling the monitor main body, which is to be rotated against the link member, with the link member. The monitor includes an auxiliary link member to link the rotation of the link member against the base member with the rotation of monitor main body, and a base bracket combined to the base member to allow the base member to be installed on an inclined plane.
摘要:
Semiconductor fabrication processes are provided for removing sidewall spacers from gate structures while mitigating or otherwise preventing defect mechanisms such as damage to metal silicide structures or otherwise impeding or placing limitations on subsequent process flows.
摘要:
A semiconductor structure is provided which includes a first semiconductor device in a first active semiconductor region and a second semiconductor device in a second active semiconductor region. A first dielectric liner overlies the first semiconductor device and a second dielectric liner overlies the second semiconductor device, with the second dielectric liner overlapping the first dielectric liner at an overlap region. The second dielectric liner has a first portion having a first thickness contacting an apex of the second gate conductor and a second portion extending from peripheral edges of the second gate conductor which has a second thickness substantially greater than the first thickness. A first conductive via contacts at least one of the first or second gate conductors and the conductive via extends through the first and second dielectric liners at the overlap region. A second conductive via may contact at least one of a source region or a drain region of the second semiconductor device.
摘要:
A printed circuit board is disclosed. The printed circuit board, which may include an insulation layer, a first metal pad formed on the insulation layer, a second metal pad electrically coupled with the first metal pad and having an ionization tendency lower than that of the first metal pad, and a sacrificial electrode electrically coupled with the second metal pad to prevent corrosion in the first metal pad, can be utilized to prevent excessive etching that may otherwise occur due to galvanic corrosion between metal pads of different ionization tendencies.
摘要:
A photovoltaic device having a relatively high photoelectric efficiency and a method of manufacturing the same. The photovoltaic device according to an embodiment of the present invention includes a transparent electrode, a metal electrode, and a plurality of photovoltaic layers between the transparent electrode and the metal electrode. The photovoltaic layers include light-absorbing compounds for absorbing different light absorption wavelength bands, and each of the photovoltaic layers comprises an electron accepting material. As such, a photovoltaic device according to an embodiment of the present invention includes a plurality of photovoltaic layers having different light absorption regions, and thereby having relatively high photoelectric efficiency.