公开(公告)号：US09142743B2

公开(公告)日：2015-09-22

申请号：US13196839

申请日：2011-08-02

Applicant: Chih-Wei Chuang ,  Chao-Kun Lin ,  Long Yang ,  Norihito Hamaguchi

Inventor： Chih-Wei Chuang ,  Chao-Kun Lin ,  Long Yang ,  Norihito Hamaguchi

IPC: H01L33/36 ,  H01L33/62 ,  H01L33/00 ,  H01L33/40 ,  H01L23/00

CPC classification number: H01L33/62 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L33/0079 ,  H01L33/405 ,  H01L2224/05624 ,  H01L2224/29118 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2924/00014 ,  H01L2924/0132 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2933/0066 ,  H01L2924/0665 ,  H01L2924/01013 ,  H01L2924/0103 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A vertical GaN-based LED is made by growing an epitaxial LED structure on a silicon wafer. A silver layer is added and annealed to withstand >450° C. temperatures. A barrier layer (e.g., Ni/Ti) is provided that is effective for five minutes at >450° C. at preventing bond metal from diffusing into the silver. The resulting device wafer structure is then wafer bonded to a carrier wafer structure using a high temperature bond metal (e.g., AlGe) that melts at >380° C. After wafer bonding, the silicon is removed, gold-free electrodes (e.g., Al) are added, and the structure is singulated. High temperature solder (e.g., ZnAl) that is compatible with the electrode metal is used for die attach. Die attach occurs at >380° C. for ten seconds without melting the bond metal or otherwise damaging the device. The entire LED contains no gold, and consequently is manufacturable in a high-volume gold-free semiconductor fabrication facility.

Abstract translation: 通过在硅晶片上生长外延LED结构来制造垂直GaN基LED。 添加银层并退火以承受> 450℃的温度。 提供了在> 450℃有效5分钟的阻挡层（例如Ni / Ti），以防止粘结金属扩散到银中。 然后，所得到的器件晶片结构使用在> 380℃熔化的高温接合金属（例如，AlGe）将晶片结合到载体晶片结构。在晶片接合之后，去除硅，无金电极（例如，Al ），并且结构被分割。 与电极金属相容的高温焊料（例如ZnAl）用于管芯附着。 芯片附着在> 380°C下发生十秒，而不熔化粘结金属或以其他方式损坏器件。 整个LED不含金，因此可在大容量无金属半导体制造设备中制造。

公开(公告)号：US20140373332A1

公开(公告)日：2014-12-25

申请号：US14308116

申请日：2014-06-18

Applicant: Jui-Kun LIN

Inventor： Jui-Kun LIN

IPC: B21C37/06

CPC classification number: B21C37/16 ,  B21D5/10 ,  B21D22/025 ,  Y10T29/49826

Abstract: A manufacturing method for a stage tube that has a first tubular segment and a second tubular segment bordering mutually having different diameters includes: taking a metal plate that has a first segment and a second segment bordering mutually and having a first width and a second width, respectively, the first width being defined between two first paired edges, and the two second width being defined between two second paired edges; forming the first and second segments so as to define a first edge interval; rolling up the first and second segments so that the two first paired edges are jointed together and form the first tubular segment, while the second segment is formed to define a second edge interval; and rolling up the second segment so that the two second paired edges are jointed and form the second tubular segment.

Abstract translation: 具有第一管状段和相互具有不同直径的第二管段的台管的制造方法包括：取第一段和第二段的金属板，该第一段和第二段相互接合并具有第一宽度和第二宽度， 所述第一宽度分别限定在两个第一成对边缘之间，并且所述两个第二宽度限定在两个第二成对边缘之间; 形成第一和第二段以限定第一边缘间隔; 卷起第一和第二段，使得两个第一成对边缘接合在一起并形成第一管状段，而第二段形成以限定第二边缘间隔; 并且卷起第二段，使得两个第二对的边缘被接合并形成第二管段。

公开(公告)号：US08895332B2

公开(公告)日：2014-11-25

申请号：US12701336

申请日：2010-02-05

Applicant: Ray-Hua Horng ,  Dong-Sing Wuu ,  Shao-Hua Huang ,  Chuang-Yu Hsieh ,  Chao-Kun Lin

Inventor： Ray-Hua Horng ,  Dong-Sing Wuu ,  Shao-Hua Huang ,  Chuang-Yu Hsieh ,  Chao-Kun Lin

IPC: H01L21/00 ,  H01L33/00 ,  H01L33/22 ,  H01L33/44

CPC classification number: H01L33/22 ,  H01L33/0079 ,  H01L33/44

Abstract: This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided.

Abstract translation: 本发明提供一种具有高光提取的发光二极管芯片，其包括基板，通过电光效应产生光的外延层结构，夹在基板和外延层结构之间的透明反射层，以及 一对用于向外延层结构提供电源的电极。 外延层结构的底表面和顶表面被粗糙化以具有不小于100nm均方根（rms）的粗糙度。 因此外延层结构产生的光被有效地抽出。 形成不大于5μm的透明反射层作为衬底和外延层结构之间的界面。 朝向基板的光更有效地向上反射。 因此光提取和亮度增强。 还提供了用于制造本发明的发光二极管芯片的方法。

公开(公告)号：US20140054640A1

公开(公告)日：2014-02-27

申请号：US13967982

申请日：2013-08-15

Applicant: Chih-Wei Chuang ,  Chao-Kun Lin

Inventor： Chih-Wei Chuang ,  Chao-Kun Lin

IPC: H01L33/38

CPC classification number: H01L33/38 ,  H01L33/14 ,  H01L33/145 ,  H01L33/22 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L2933/0016

Abstract: An LED device includes a strip-shaped electrode, a strip-shaped current blocking structure and a plurality of distributed current blocking structures. The current blocking structures are formed of an insulating material such as silicon dioxide. The strip-shaped current blocking structure is located directly underneath the strip-shaped electrode. The plurality of current blocking structures may be disc shaped portions disposed in rows adjacent the strip-shaped current blocking structure. Distribution of the current blocking structures is such that current is prevented from concentrating in regions immediately adjacent the electrode, thereby facilitating uniform current flow into the active layer and facilitating uniform light generation in areas not underneath the electrode. In another aspect, current blocking structures are created by damaging regions of a p-GaN layer to form resistive regions. In yet another aspect, current blocking structures are created by etching away highly doped contact regions to form regions of resistive contact between conductive layers.

Abstract translation: LED器件包括条形电极，条状电流阻挡结构和多个分布电流阻挡结构。 电流阻挡结构由诸如二氧化硅的绝缘材料形成。 带状电流阻挡结构位于条形电极的正下方。 多个电流阻挡结构可以是与带状电流阻挡结构相邻的行设置的盘形部分。 电流阻挡结构的分布使得防止电流集中在紧邻电极的区域中，从而促进均匀的电流流入有源层并且促进在不在电极下方的区域中均匀的光产生。 在另一方面，通过损害p-GaN层的区域以形成电阻区域来产生电流阻挡结构。 在另一方面，通过蚀刻掉高度掺杂的接触区域以形成导电层之间的电阻接触区域来产生电流阻挡结构。

公开(公告)号：US08637891B2

公开(公告)日：2014-01-28

申请号：US12472809

申请日：2009-05-27

Applicant: Steven D. Lester ,  Chao-Kun Lin

Inventor： Steven D. Lester ,  Chao-Kun Lin

IPC: H01L33/38

CPC classification number: H01L33/38 ,  H01L33/20 ,  H01L33/64

Abstract: A light-emitting device includes first and second semiconductor layers and a light-emitting layer between the first and second semiconductor layers. The light-emitting device also includes an improved electrode structures.

Abstract translation: 发光器件包括第一和第二半导体层以及第一和第二半导体层之间的发光层。 发光装置还包括改进的电极结构。

公开(公告)号：US08624279B2

公开(公告)日：2014-01-07

申请号：US13472480

申请日：2012-05-16

Applicant: Bo-Hsiang Tseng ,  Yi-Shan Hsieh ,  Bo-Wen Lin ,  Kun-Lin Yang ,  Chun-Yen Peng ,  Wen-Ching Hsu

Inventor： Bo-Hsiang Tseng ,  Yi-Shan Hsieh ,  Bo-Wen Lin ,  Kun-Lin Yang ,  Chun-Yen Peng ,  Wen-Ching Hsu

IPC: H01L33/00 ,  H01L27/15 ,  H01L29/16 ,  H01L31/12 ,  H01L29/18

CPC classification number: H01L33/32 ,  H01L33/007

Abstract: A light emitting diode (LED) substrate includes a sapphire substrate which is characterized by having a surface consisting of irregular hexagonal pyramid structures, wherein a pitch of the irregular hexagonal pyramid structure is less than 10 μm. A symmetrical cross-sectional plane of each of the irregular hexagonal pyramid structures has a first base angle and a second base angle, wherein the second base angle is larger than the first base angle, and the second base angle is 50° to 70°. This LED substrate has high light-emitting efficiency.

Abstract translation: 发光二极管（LED）衬底包括蓝宝石衬底，其特征在于具有由不规则六边形金字塔结构组成的表面，其中不规则六边形金字塔结构的间距小于10μm。 每个不规则六边形金字塔结构的对称横截面具有第一底角和第二底角，其中第二底角大于第一底角，第二底角为50°至70°。 该LED基板具有高的发光效率。

公开(公告)号：US20130328093A1

公开(公告)日：2013-12-12

申请号：US13965799

申请日：2013-08-13

Applicant: Chao-Kun Lin

Inventor： Chao-Kun Lin

IPC: H01L33/60

CPC classification number: H01L33/60 ,  H01L25/0753 ,  H01L33/005 ,  H01L33/0079 ,  H01L33/405 ,  H01L33/46 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2933/0066 ,  H01L2933/0075 ,  H01L2933/0091 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A thin-film light emitting diode includes an insulating substrate, a reflective metal electrode on the insulating substrate forming a current spreading layer, and an epitaxial structure on the electrode.

Abstract translation: 薄膜发光二极管包括绝缘基板，形成电流扩散层的绝缘基板上的反射金属电极和电极上的外延结构。

公开(公告)号：US20130319064A1

公开(公告)日：2013-12-05

申请号：US13488061

申请日：2012-06-04

Applicant: Yi-Kun LIN

Inventor： Yi-Kun LIN

IPC: B23P15/26

CPC classification number: B23P15/26 ,  B23P2700/10 ,  F28F3/02 ,  H01L21/4871 ,  H01L23/367 ,  H01L23/467 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A heat sink fabrication method includes the step of heating aluminum billets into malleable aluminum and then extruding malleable aluminum into an aluminum substrate bar having different lengths of fins radially spaced around the periphery thereof, the step of using a machine to transversely cut the aluminum substrate bar into multiple aluminum substrates subject to a predetermined thickness, and the step of employing a stamping technique to stamp each aluminum substrate into a heat sink having radiation fins extended from and spaced around a plate-shaped base portion thereof.

Abstract translation: 散热器制造方法包括将铝坯加工成可延展的铝，然后将可延展的铝挤压成具有不同长度的翅片的铝基板的步骤，该铝基板具有围绕其周边径向间隔开的不同长度的翅片，使用机器横向切割铝基板 进入预定厚度的多个铝基板，并且采用冲压技术将每个铝基板压印成散热片的步骤，散热片具有从其板状基部延伸并间隔开的散热片。

公开(公告)号：US08416560B2

公开(公告)日：2013-04-09

申请号：US13117091

申请日：2011-05-26

Applicant: Kuo-Kun Lin ,  Chu-Chia Tsai ,  Chia-Hsien Lee ,  Wen-Chin Wu

Inventor： Kuo-Kun Lin ,  Chu-Chia Tsai ,  Chia-Hsien Lee ,  Wen-Chin Wu

IPC: H05K5/00 ,  H05K7/00

CPC classification number: H04N5/2251 ,  F16M11/048 ,  F16M13/00 ,  F16M13/02 ,  G06F1/1601 ,  G06F1/1616 ,  G06F1/1656 ,  H04N1/00129 ,  H04N1/00204 ,  H04N1/19594 ,  H04N2201/0422

Abstract: An auxiliary mechanism to be attached to a portable electronic device when capturing image data of an image medium, the portable electronic device includes an image capture element, the auxiliary mechanism comprises a body, a fixer and a connecting element. The fixer is connected to the body, wherein the image medium is placed on the fixer. The connecting element is connected to the body and detachably connected to the portable electronic device, wherein the image capture element corresponds to the image medium and captures the image data thereof.

Abstract translation: 当拍摄图像介质的图像数据时，附接到便携式电子设备的辅助机构，便携式电子设备包括图像捕获元件，辅助机构包括主体，定影器和连接元件。 定影器连接到身体，其中图像介质被放置在定影器上。 连接元件连接到主体并且可拆卸地连接到便携式电子设备，其中图像捕获元件对应于图像介质并且捕捉其图像数据。

公开(公告)号：US08405416B2

公开(公告)日：2013-03-26

申请号：US12780886

申请日：2010-05-15

Applicant: Chun-lang Chiu ,  Ren-tsai Hung ,  Ming-kang Huang ,  Chih-kun Lin

Inventor： Chun-lang Chiu ,  Ren-tsai Hung ,  Ming-kang Huang ,  Chih-kun Lin

IPC: G01R31/02

CPC classification number: H05K3/4007 ,  G01R1/07314 ,  G01R3/00 ,  H05K3/0079 ,  H05K3/0082 ,  H05K2201/09736 ,  H05K2203/1476

Abstract: A probe includes a wire and a bump, wherein the wire is formed on a substrate; and the bump is formed upon the wire. In addition, a probe block includes a plurality of probes disposed on a substrate, so that the probe block is composed of a plurality of wires and bumps. The wires are disposed on the substrate and each bump is disposed accurately upon an end of each wire. The bump and the wire of the probe in accordance with the present invention are formed jointlessly. A method of fabricating the probe is characterized in that a grayscale mask is utilized to form the wire on the substrate and form the bump upon the wire by using a single masking process.

Abstract translation: 探针包括线和凸块，其中线形成在衬底上; 并且凸起形成在线上。 此外，探针块包括设置在基板上的多个探针，使得探针块由多个线和凸块组成。 电线设置在基板上，并且每个凸块精确地设置在每根导线的端部上。 根据本发明的探针的凸起和线被无接缝地形成。 制造探针的方法的特征在于，利用灰度掩模在衬底上形成线，并通过使用单一掩蔽工艺在线上形成凸块。