公开(公告)号：US07989361B2

公开(公告)日：2011-08-02

申请号：US11831380

申请日：2007-07-31

Applicant: Jong Baek Seon ,  Hyun Dam Jeong ,  Sang Yoon Lee

Inventor： Jong Baek Seon ,  Hyun Dam Jeong ,  Sang Yoon Lee

IPC: H01L21/31

CPC classification number: H01L21/02282 ,  H01L21/02175 ,  H01L21/02337 ,  H01L21/316 ,  H01L29/4908 ,  H01L29/78681 ,  H01L29/7869 ,  H01L51/0525

Abstract: This invention pertains to a composition for a dielectric thin film, which is capable of being subjected to a low-temperature process. Specifically, the invention is directed to a metal oxide dielectric thin film formed using the composition, a preparation method thereof, a transistor device comprising the dielectric thin film, and an electronic device comprising the transistor device. The electronic device to which the dielectric thin film has been applied exhibits excellent electrical properties, thereby satisfying both a low operating voltage and a high charge mobility.

Abstract translation: 本发明涉及能够进行低温处理的电介质薄膜用组合物。 具体地，本发明涉及使用该组合物形成的金属氧化物电介质薄膜，其制备方法，包括该电介质薄膜的晶体管器件和包括晶体管器件的电子器件。 已经施加了电介质薄膜的电子器件表现出优异的电性能，从而满足低工作电压和高电荷迁移率。

公开(公告)号：US07923529B2

公开(公告)日：2011-04-12

申请号：US12390841

申请日：2009-02-23

Applicant: Eun Jeong Jeong ,  Chang Ju Kim ,  Bang Lin Lee ,  Sang Yoon Lee ,  Kook Min Han

Inventor： Eun Jeong Jeong ,  Chang Ju Kim ,  Bang Lin Lee ,  Sang Yoon Lee ,  Kook Min Han

IPC: C08G75/00 ,  C08G75/06 ,  H01L29/02 ,  H01L29/08

CPC classification number: H01L51/0068 ,  C08G61/12 ,  C08G61/126 ,  H01L51/0036 ,  H01L51/0072 ,  H01L51/0545

Abstract: An oligothiophene-arylene derivative wherein an arylene having n-type semiconductor characteristics is introduced into an oligothiophene having p-type semiconductor characteristics, thereby simultaneously exhibiting both p-type and n-type semiconductor characteristics. Further, an organic thin film transistor using the oligothiophene-arylene derivative.

Abstract translation: 将具有n型半导体特性的亚芳基引入具有p型半导体特性的低聚噻吩中的低聚噻吩 - 亚芳基衍生物，同时具有p型和n型半导体特性。 另外，使用低聚噻吩 - 亚芳基衍生物的有机薄膜晶体管。

公开(公告)号：US20110050042A1

公开(公告)日：2011-03-03

申请号：US12862919

申请日：2010-08-25

Applicant: Duk-Hyun CHOI ,  Jae-Young CHOI ,  Sang-Yoon LEE ,  Sang-Woo KIM

Inventor： Duk-Hyun CHOI ,  Jae-Young CHOI ,  Sang-Yoon LEE ,  Sang-Woo KIM

IPC: H02N2/18 ,  H01L29/84

CPC classification number: H02N2/18 ,  H01L41/0478 ,  H01L41/113 ,  H01L41/183 ,  H01L41/31 ,  H01L41/37 ,  H01L51/0032 ,  Y10T29/42 ,  Y10T29/49155 ,  Y10T29/49194

Abstract: Disclosed is an apparatus for generating electrical energy that includes; a first electrode, and a second electrode spaced apart from the first electrode, and an energy generation layer disposed between the first electrode and the second electrode, wherein the energy generation layer comprises a photoelectric conversion layer and a plurality of piezoelectric nanowires, and wherein when an external force is applied to at least one of the first electrode and the second electrode, the plurality of piezoelectric nanowires are transformed to generate electrical energy.

Abstract translation: 公开了一种用于产生电能的装置，包括： 第一电极和与第一电极间隔开的第二电极，以及设置在第一电极和第二电极之间的能量产生层，其中能量产生层包括光电转换层和多个压电纳米线，其中当 外力施加到第一电极和第二电极中的至少一个，多个压电纳米线被转换以产生电能。

公开(公告)号：US20100321279A1

公开(公告)日：2010-12-23

申请号：US12591914

申请日：2009-12-04

Applicant: Ji-sim Jung ,  Sang-yoon Lee ,  Kwang-hee Lee ,  Jang-yeon Kwon ,  Kyoung-seok Son

Inventor： Ji-sim Jung ,  Sang-yoon Lee ,  Kwang-hee Lee ,  Jang-yeon Kwon ,  Kyoung-seok Son

IPC: G09G3/30 ,  H01L29/12 ,  H01L29/786 ,  G09G3/20

CPC classification number: H01L29/7869 ,  H01L27/3272

Abstract: Disclosed are a transistor, an electronic device and methods of manufacturing the same, the transistor including a photo relaxation layer between a channel layer and a gate insulating layer in order to suppress characteristic variations of the transistor due to light. The photo relaxation layer may be a layer of a material capable of suppressing variations in a threshold voltage of the transistor due to light. The photo relaxation layer may contain a metal oxide such as aluminum (Al) oxide. The channel layer may contain an oxide semiconductor.

Abstract translation: 公开了晶体管，电子器件及其制造方法，晶体管包括沟道层和栅极绝缘层之间的光弛豫层，以抑制由于光引起的晶体管的特性变化。 光弛豫层可以是能够抑制由于光引起的晶体管的阈值电压的变化的材料层。 光弛豫层可以含有氧化铝（Al）等金属氧化物。 沟道层可以含有氧化物半导体。

公开(公告)号：US20100292478A1

公开(公告)日：2010-11-18

申请号：US12749046

申请日：2010-03-29

Applicant: Zang Hee CHO ,  Young Bo Kim ,  Sang Yoon LEE ,  So Hee KIM

Inventor： Zang Hee CHO ,  Young Bo Kim ,  Sang Yoon LEE ,  So Hee KIM

IPC: C07D455/06 ,  C07D451/00 ,  C07D213/64 ,  C07D277/62 ,  C07C253/30 ,  C07C217/76 ,  C07C45/61

CPC classification number: C07D213/64 ,  C07C213/06 ,  C07C253/30 ,  C07D233/91 ,  C07D277/66 ,  C07D285/10 ,  C07D451/02 ,  C07D455/06 ,  C07D471/04 ,  C07C217/80 ,  C07C255/42

Abstract: A process of preparing a radioactive compound containing a fluorine-18 isotope is provided. In one embodiment, the process may comprise forming a [18F] fluoroalkyl triflate by triflating a [18F] fluoroalkyl compound with AgOTf, and forming a [18F] fluoroalkylated radioactive compound through alkylation between the [18F] fluoroalkyl triflate and a radioactive compound precursor having at least one group selected from NH, OH and SH.

Abstract translation: 提供了制备含有氟-18同位素的放射性化合物的方法。 在一个实施方案中，该方法可以包括通过使[18 F]氟烷基化合物与AgOTf进行三氟甲酰化形成[18 F]氟烷基三氟甲磺酸酯，并通过[18 F]氟代烷基三氟甲磺酸酯与具有 选自NH，OH和SH中的至少一个基团。

公开(公告)号：US07834352B2

公开(公告)日：2010-11-16

申请号：US11972847

申请日：2008-01-11

Applicant: Tae Woo Lee ,  Young Hun Byun ,  Yi Yeol Lyu ,  Sang Yoon Lee ,  Bon Won Koo

Inventor： Tae Woo Lee ,  Young Hun Byun ,  Yi Yeol Lyu ,  Sang Yoon Lee ,  Bon Won Koo

IPC: H01L31/00

CPC classification number: H01L51/0021 ,  B82Y10/00 ,  H01L51/0015 ,  H01L51/0046 ,  H01L51/0545

Abstract: A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, even all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.

Abstract translation: 制造薄膜晶体管的方法，其中源极和漏极通过溶液处理形成，甚至包括在衬底上形成电极的所有阶段，形成绝缘体层以及形成有机半导体层通过 解决过程。 在该方法中，简化了制造并降低了制造成本。 由于高电荷迁移率，有机薄膜晶体管可能需要高速切换的集成电路。

公开(公告)号：US20100276683A1

公开(公告)日：2010-11-04

申请号：US12659837

申请日：2010-03-23

Applicant: Tae-sang Kim ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Kyoung-seok Son ,  Ji-sim Jung ,  Kwang-hee Lee

Inventor： Tae-sang Kim ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Kyoung-seok Son ,  Ji-sim Jung ,  Kwang-hee Lee

IPC: H01L29/786 ,  H01L29/22

CPC classification number: H01L29/7869

Abstract: Provided are an oxide semiconductor and an oxide thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of an indium (In)-zinc (Zn) oxide in which hafnium (Hf) is contained, wherein In, Zn, and Hf are contained in predetermined or given composition ratios.

Abstract translation: 提供了包括氧化物半导体的氧化物半导体和氧化物薄膜晶体管。 氧化物半导体可以由其中含有铪（Hf）的铟（In） - 锌（Zn）氧化物形成，其中以预定或给定的组成比包含In，Zn和Hf。

公开(公告)号：US20100200842A1

公开(公告)日：2010-08-12

申请号：US12656685

申请日：2010-02-12

Applicant: Jeong-il Park ,  Byung-Wook Yoo ,  Do-hwan Kim ,  Sang-Yoon Lee ,  Bang-lin Lee ,  Eun-jeong Jeong

Inventor： Jeong-il Park ,  Byung-Wook Yoo ,  Do-hwan Kim ,  Sang-Yoon Lee ,  Bang-lin Lee ,  Eun-jeong Jeong

IPC: H01L51/30 ,  C07D249/04 ,  C07F7/02 ,  B32B9/00 ,  B32B17/06 ,  B32B15/04 ,  B32B3/10 ,  B05D3/00 ,  B05D3/04 ,  B05D3/06

CPC classification number: H01L51/102 ,  B82Y30/00 ,  H01L51/0023 ,  H01L51/0512 ,  Y10T428/24802 ,  Y10T428/24917 ,  Y10T428/31504 ,  Y10T428/31678

Abstract: Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same.

Abstract translation: 公开了一种表面改性剂，其包括在一个末端具有乙炔基的化合物，使用表面改性剂制造的层压结构，该层压结构体的制造方法和包含该层压结构的晶体管。

公开(公告)号：US07767505B2

公开(公告)日：2010-08-03

申请号：US12153651

申请日：2008-05-22

Applicant: Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

Inventor： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

IPC: H01L21/84

CPC classification number: H01L29/7869 ,  H01L29/66969

Abstract: Methods of manufacturing an oxide semiconductor thin film transistor are provided. The methods include forming a gate on a substrate, and a gate insulating layer on the substrate to cover the gate. A channel layer, which is formed of an oxide semiconductor, may be formed on the gate insulating layer. Source and drain electrodes may be formed on opposing sides of the channel layer. The method includes forming supplying oxygen to the channel layer, forming a passivation layer to cover the source and drain electrodes and the channel layer, and performing an annealing process after forming the passivation layer.

Abstract translation: 提供了制造氧化物半导体薄膜晶体管的方法。 所述方法包括在衬底上形成栅极，以及在衬底上形成栅极绝缘层以覆盖栅极。 可以在栅极绝缘层上形成由氧化物半导体形成的沟道层。 源极和漏极可以形成在沟道层的相对侧上。 所述方法包括：向所述沟道层形成供氧，形成钝化层以覆盖所述源漏电极和所述沟道层，以及在形成所述钝化层之后进行退火处理。

公开(公告)号：US20100159219A1

公开(公告)日：2010-06-24

申请号：US12588287

申请日：2009-10-09

Applicant: Jong Jin Park ,  Jung Han Shin ,  Sang Yoon Lee

Inventor： Jong Jin Park ,  Jung Han Shin ,  Sang Yoon Lee

IPC: B32B3/10 ,  C08K5/1515 ,  C08K5/1539 ,  C08K5/07 ,  C08K5/151 ,  C07D307/83 ,  C07D307/60 ,  C07D493/00 ,  C07D303/12 ,  C07C49/303

CPC classification number: B82Y30/00 ,  B82Y40/00 ,  C01B32/168 ,  C01B32/17 ,  C08K3/041 ,  C08K9/04 ,  C09D7/70 ,  C09D109/06 ,  C09D129/04 ,  G03F7/0382 ,  Y10S977/746 ,  Y10S977/753 ,  Y10S977/842 ,  Y10T428/24893 ,  Y10T428/24994

Abstract: Disclosed herein are methods of making a negative pattern of carbon nanotubes or a polymerized carbon nanotube composite having an interpenetrating polymer network (IPN) by modifying the surfaces of the carbon nanotubes with polymerizable functional groups such as oxirane and anhydride groups and subjecting the surface-modified carbon nanotubes either to a photolithography process or to a heatcuring process. By virtue of the present invention, desired patterns of carbon nanotubes can be easily made on the surfaces of various substrates, and polymerized carbon nanotube composites improved in hardening properties can be made without additional polymers.

Abstract translation: 本文公开了通过用诸如环氧乙烷和酸酐基团的可聚合官能团改性碳纳米管的表面来制备碳纳米管的负型图案或具有互穿聚合物网络（IPN）的聚合碳纳米管复合材料的方法，并对表面改性 碳纳米管到光刻工艺或热固化工艺。 根据本发明，可以容易地在各种基板的表面上形成期望的碳纳米管图案，并且可以在没有附加的聚合物的情况下进行提高硬化性能的聚合碳纳米管复合材料。