公开(公告)号：US20120213947A1

公开(公告)日：2012-08-23

申请号：US13372290

申请日：2012-02-13

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/44 ,  H05H1/24 ,  C23C16/04

CPC classification number: C23C16/045 ,  C23C16/403 ,  C23C16/45551

Abstract: Embodiments relate to depositing a layer of material on a permeable substrate by passing the permeable substrate between a set of reactors. The reactors may inject source precursor, reactant precursor, purge gas or a combination thereof onto the permeable substrate as the permeable substrate passes between the reactors. Part of the gas injected by a reactor penetrates the permeable substrate and is discharged by the other reactor. The remaining gas injected by the reactor moves in parallel to the surface of the permeable substrate and is discharged via an exhaust portion formed on the same reactor.

Abstract translation: 实施例涉及通过在一组反应器之间通过可渗透基底将一层材料沉积在可渗透基底上。 当可渗透的基底通过反应器之前，反应器可将源前体，反应物前体，吹扫气体或其组合注入到可渗透基底上。 由反应器注入的气体的一部分穿透可渗透的基底并被另一个反应器排出。 由反应器喷射的剩余气体平行于可渗透基底的表面移动，并经由形成在同一反应器上的排气部排出。

公开(公告)号：US20120207948A1

公开(公告)日：2012-08-16

申请号：US13369717

申请日：2012-02-09

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/455 ,  C23C16/50

CPC classification number: C23C16/513 ,  C23C16/308 ,  C23C16/403 ,  C23C16/405 ,  C23C16/45542 ,  C23C16/45551

Abstract: Performing atomic layer deposition (ALD) using radicals of a mixture of nitrogen compounds to increase the deposition rate of a layer deposited on a substrate. A mixture of nitrogen compound gases is injected into a radical reactor. Plasma of the compound gas is generated by applying voltage across two electrodes in the radical reactor to generate radicals of the nitrogen compound gases. The radicals are injected onto the surface of a substrate previously injected with source precursor. The radicals function as a reactant precursor and deposit a layer of material on the substrate.

Abstract translation: 使用氮化合物的混合物的自由基进行原子层沉积（ALD），以增加沉积在基底上的层的沉积速率。 将氮化合物气体的混合物注入自由基反应器中。 通过在自由基反应器中的两个电极上施加电压以产生氮化合物气体的自由基来产生复合气体的等离子体。 将基团注入预先注入源前体的基底的表面上。 该基团用作反应物前体并在衬底上沉积一层材料。

公开(公告)号：US20120125258A1

公开(公告)日：2012-05-24

申请号：US13295012

申请日：2011-11-11

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/50

CPC classification number: C23C16/45551 ,  C23C16/45536 ,  H01J37/32376 ,  H01J37/32449 ,  H01J37/32568 ,  H01J37/32752 ,  H01J37/32807

Abstract: An elongated reactor assembly in a deposition device for performing atomic layer deposition (ALD) on a large substrate. The elongated reactor assembly includes one or more injectors and/or radical reactors. Each injector or radical reactor injects a gas or radicals onto the substrate as the substrate passes the injector or radical reactor as part of the ALD process. Each injector or radical reactor includes a plurality of sections where at least two sections have different cross sectional configurations. By providing different sections in the injector or radical reactor, the injector or radical reactor may inject the gas or the radicals more uniformly over the substrate. Each injector or radical reactor may include more than one outlet for discharging excess gas or radicals outside the deposition device.

Abstract translation: 用于在大型衬底上进行原子层沉积（ALD）的沉积装置中的细长反应器组件。 细长的反应器组件包括一个或多个注射器和/或自由基反应器。 当基板作为ALD过程的一部分通过注射器或自由基反应器时，每个注射器或自由基反应器将气体或自由基注入到基底上。 每个喷射器或自由基反应器包括多个部分，其中至少两个部分具有不同的横截面构造。 通过在注射器或自由基反应器中提供不同的部分，注射器或自由基反应器可以将气体或自由基更均匀地注入基底上。 每个注射器或自由基反应器可以包括用于排出沉积装置外部的多余气体或自由基的多于一个的出口。

公开(公告)号：US20120094149A1

公开(公告)日：2012-04-19

申请号：US13273076

申请日：2011-10-13

Applicant: Sang In Lee ,  Chang Wan Hwang

Inventor： Sang In Lee ,  Chang Wan Hwang

IPC: C23C16/18 ,  B32B9/04

CPC classification number: C23C16/45551 ,  C23C16/403 ,  C23C16/45536

Abstract: Atomic layer deposition is performed by reciprocating a susceptor in two directions, subjecting a substrate on the susceptor to two different sequences of processes. By subjecting the susceptor to different sequences of processes, the substrate undergoes different processes that otherwise would have required an additional set of injectors or reactors. The reduced number of injectors or reactors enables a more compact deposition device, and reduces the cost associated with the deposition device.

Abstract translation: 通过使感受器沿两个方向往复移动来进行原子层沉积，对基座上的基底进行两个不同的处理顺序。 通过对基座进行不同的工艺顺序，衬底经历不同的工艺，否则将需要额外的一组注射器或反应器。 减少注射器或反应器的数量使得能够实现更紧凑的沉积装置，并降低与沉积装置相关的成本。

公开(公告)号：US20120027953A1

公开(公告)日：2012-02-02

申请号：US13190104

申请日：2011-07-25

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/455 ,  C23C16/50

CPC classification number: C23C16/45551 ,  C23C16/45536 ,  C23C16/54

Abstract: A rotating reactor assembly includes an injector rotor comprising a channel extending in a direction parallel to a rotational axis of the injector rotor and at least one injection hole connected to the channel; and an intake port through which a material is introduced. As the injector rotor rotates, the channel is timely and/or periodically connected to the intake port such that the material is injected to a substrate through the at least one injection hole.

Abstract translation: 旋转反应器组件包括喷射器转子，其包括在平行于喷射器转子的旋转轴线的方向上延伸的通道和连接到通道的至少一个喷射孔; 以及引入材料的进气口。 当喷射器转子旋转时，通道及时地和/或周期性地连接到进气口，使得材料通过至少一个喷射孔喷射到基底。

公开(公告)号：US20100215871A1

公开(公告)日：2010-08-26

申请号：US12709763

申请日：2010-02-22

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/50

CPC classification number: C23C16/45538 ,  C23C16/06 ,  C23C16/34 ,  C23C16/45517 ,  C23C16/45523 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/50 ,  C23C16/545

Abstract: A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.

Abstract translation: 使用由等离子体产生的自由基形成薄膜的方法可包括使用等离子体产生反应物前体的自由基; 通过将衬底暴露于反应物前体的自由基和源前体的混合物，在衬底上形成第一薄膜; 将基底暴露于源前体; 以及通过将所述衬底暴露于所述反应物前体和所述源前体的自由基的混合物而在所述衬底上形成第二薄膜。 由于在第一薄膜的形成和第二薄膜的形成之间将基板暴露于源极前体，因此可以提高沉积速率。

公开(公告)号：US20100037824A1

公开(公告)日：2010-02-18

申请号：US12539142

申请日：2009-08-11

Applicant: Sang In LEE

Inventor： Sang In LEE

IPC: C23C16/06

CPC classification number: C23C16/513 ,  H01J37/3244 ,  H01J37/32449 ,  H05H1/42 ,  H05H1/48 ,  H05H2001/481

Abstract: A plasma reactor includes a plasma generator configured to spray plasma, and an injector located adjacent to the plasma generator and configured to inject a precursor to the plasma sprayed from the plasma injector. The injector includes a platform having an opening, at least one injection hole formed in the platform to inject the precursor to the opening, and a channel formed in the platform to connect with the at least one injection hole to carry the precursor. The plasma reactor may allow supply of the plasma together with the precursor. In case corona plasma is used where a vacuum state is not needed, a wider process window may be ensured.

Abstract translation: 等离子体反应器包括被配置为喷射等离子体的等离子体发生器和位于等离子体发生器附近的喷射器，并配置成将前体喷射到等离子体喷射器喷射的等离子体上。 喷射器包括具有开口的平台，在平台中形成的至少一个喷射孔以将前体喷射到开口，以及形成在平台中的与至少一个喷射孔连接以承载前体的通道。 等离子体反应器可以允许将等离子体与前体一起供应。 在不需要真空状态的情况下使用电晕等离子体的情况下，可以确保更宽的工艺窗口。

公开(公告)号：US20080222666A1

公开(公告)日：2008-09-11

申请号：US12038080

申请日：2008-02-27

Applicant: Sang In LEE ,  Ju Won Cho

Inventor： Sang In LEE ,  Ju Won Cho

IPC: G11B33/02

CPC classification number: G11B17/056 ,  G11B33/027

Abstract: An optical disc player capable of keeping a rear surface of a door out of a user's sight when the door is opened to present an aesthetically pleasing appearance and promote a beauty thereof. The optical disc player includes a main body with a front panel having an entrance, a tray disposed at the main body to be extracted from or retracted into the main body through the entrance, a door to open or close the entrance, and a door connecting unit to connect the door to the front panel such that the door is opened or closed. The door connecting unit includes a first connecting link having one end rotatably connected to a first position of an inner surface of the door and the other end rotatably connected to a second position of the front panel, and a second connecting link having one end rotatably connected to a third position higher than the first position of the inner surface of the door and the other end rotatably connected to a fourth position higher than the second position of the front panel.

Abstract translation: 当门打开时能够将门的后表面保持在用户视线之外的光盘播放器呈现出美观的外观并促进其美感。 光盘播放器包括具有入口的前面板的主体，设置在主体上的托盘，通过入口从主体抽出或缩回到主体中，门打开或关闭入口，以及门连接 单元将门连接到前面板，使门打开或关闭。 门连接单元包括：第一连接链，其一端可旋转地连接到门的内表面的第一位置，另一端可旋转地连接到前面板的第二位置;第二连接链，其一端可旋转地连接 高于门的内表面的第一位置的第三位置，而另一端可转动地连接到高于前面板的第二位置的第四位置。

公开(公告)号：US07205247B2

公开(公告)日：2007-04-17

申请号：US10954819

申请日：2004-09-29

Applicant: Sang-In Lee ,  Jon S. Owyang ,  Yoshihide Senzaki ,  Aubrey L. Helms, Jr. ,  Karem Kapkin

Inventor： Sang-In Lee ,  Jon S. Owyang ,  Yoshihide Senzaki ,  Aubrey L. Helms, Jr. ,  Karem Kapkin

IPC: H01L21/31 ,  H01L21/469

CPC classification number: C23C16/45525 ,  C23C16/0272 ,  C23C16/401 ,  C23C16/405 ,  C23C16/42 ,  C23C16/45553 ,  C30B25/165 ,  C30B29/16 ,  H01L21/3141 ,  H01L21/31645

Abstract: A method of depositing a hafnium-based dielectric film is provided. The method comprises atomic layer deposition using ozone and one or more reactants comprising a hafnium precursor. A semiconductor device is also provided. The device comprises a substrate, a hafnium-based dielectric layer formed atop the substrate, and an interfacial layer formed between the substrate and the hafnium-based dielectric layer, wherein the interfacial layer comprises silicon dioxide and has a crystalline structure.

Abstract translation: 提供了一种沉积铪基电介质膜的方法。 该方法包括使用臭氧的原子层沉积和一种或多种包含铪前体的反应物。 还提供了半导体器件。 该器件包括衬底，形成在衬底顶上的基于铪的电介质层以及形成在衬底和铪基电介质层之间的界面层，其中界面层包含二氧化硅并具有晶体结构。

公开(公告)号：US07052918B2

公开(公告)日：2006-05-30

申请号：US10410341

申请日：2003-04-10

Applicant: Jae-soon Lim ,  Yeong-kwan Kim ,  Heung-soo Park ,  Sang-in Lee

Inventor： Jae-soon Lim ,  Yeong-kwan Kim ,  Heung-soo Park ,  Sang-in Lee

IPC: H01L21/8242

CPC classification number: H01L28/40 ,  H01L21/3142 ,  H01L21/31604 ,  H01L21/31616

Abstract: A multi-layer film for a thin film structure, a capacitor using the multi-layer film and methods for fabricating the multi-layer film and the capacitor, the multi-layer film including a composition transition layer between a lower material layer and an upper material layer respectively formed of different elements whose interaction parameters are different from each other, the composition transition layer containing both elements of the lower and upper material layers, the concentration of the composition transition layer gradually varying from the portion of the composition transition layer contacting with the lower material layer to the portion of the composition transition layer contacting with the upper material layer such that the concentration of the element of the upper material layer is relatively large in its portion adjacent to the upper material layer, each of the lower and upper material layers being formed of an oxide or nitride material of aluminum, silicon, zirconium, cerium, titanium, yttrium, tantalum or niobium.