公开(公告)号：US20060057746A1

公开(公告)日：2006-03-16

申请号：US10986408

申请日：2004-11-12

申请人： Seiji Inumiya ,  Motoyuki Sato ,  Akio Kaneko ,  Katsuyuki Sekine ,  Kazuhiro Eguchi

发明人： Seiji Inumiya ,  Motoyuki Sato ,  Akio Kaneko ,  Katsuyuki Sekine ,  Kazuhiro Eguchi

IPC分类号： H01L21/66

CPC分类号： H01L21/02148 ,  C23C16/401 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02271 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3143 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/31645

摘要： According to the present invention, there is provided a semiconductor device fabrication method, comprising: depositing a film made of an insulating material on a surface of a semiconductor substrate; measuring a film thickness and/or composition of the film; setting nitriding conditions or oxidation conditions on the basis of the measurement result; and nitriding or oxidizing the film on the basis of the set nitriding conditions or oxidation conditions.

摘要翻译： 根据本发明，提供一种半导体器件制造方法，包括：在半导体衬底的表面上沉积由绝缘材料制成的膜; 测量膜的膜厚度和/或组成; 根据测量结果设定氮化条件或氧化条件; 并根据设定的氮化条件或氧化条件对膜进行氮化或氧化。

公开(公告)号：US20050179091A1

公开(公告)日：2005-08-18

申请号：US11104532

申请日：2005-04-13

申请人： Akira Nishiyama ,  Seiji Inumiya

发明人： Akira Nishiyama ,  Seiji Inumiya

IPC分类号： H01L29/78 ,  H01L21/265 ,  H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L29/51 ,  H01L27/01

CPC分类号： H01L21/28194 ,  H01L21/26586 ,  H01L21/28176 ,  H01L21/28202 ,  H01L29/511 ,  H01L29/512 ,  H01L29/513 ,  H01L29/516 ,  H01L29/517 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconductor device and a method of manufacturing the semiconductor device are disclosed. A semiconductor device of one of several disclosed embodiments comprises a semiconductor layer having a source region and a drain region, and a gate insulating film provided on the semiconductor layer between the source region and the drain region. The gate insulating film comprising an oxide including a metal element and further includes at least one element selected from the group consisting of nitrogen and aluminum as a first element. The content of the first element is relatively higher at both ends near the source region and the drain region than at a center of the gate insulating film. A gate electrode is provided on the gate insulating film.

公开(公告)号：US20050170666A1

公开(公告)日：2005-08-04

申请号：US10999937

申请日：2004-12-01

申请人： Katsuyuki Sekine ,  Yoshitaka Tsunashima ,  Seiji Inumiya ,  Akio Kaneko ,  Motoyuki Sato ,  Kazuhiro Eguchi

发明人： Katsuyuki Sekine ,  Yoshitaka Tsunashima ,  Seiji Inumiya ,  Akio Kaneko ,  Motoyuki Sato ,  Kazuhiro Eguchi

IPC分类号： H01L21/316 ,  H01L21/314 ,  H01L29/78 ,  H01L21/31 ,  H01L21/469 ,  H01L21/425 ,  H01L21/22

CPC分类号： H01L21/02321 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/022 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/3143 ,  H01L21/31645 ,  H01L29/518

摘要： A manufacturing method of a semiconductor device disclosed herein, comprises: forming a silicate film containing metal on a substrate; and introducing nitrogen and deuterium into the silicate film by using ND3 gas.

摘要翻译： 本文公开的半导体器件的制造方法包括：在基板上形成含有金属的硅酸盐膜; 并通过使用ND 3 N 3气体将氮和氘引入到硅酸盐膜中。

公开(公告)号：US06924536B2

公开(公告)日：2005-08-02

申请号：US10372963

申请日：2003-02-26

申请人： Akira Nishiyama ,  Seiji Inumiya

发明人： Akira Nishiyama ,  Seiji Inumiya

IPC分类号： H01L29/78 ,  H01L21/265 ,  H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L29/51 ,  H01L31/119

CPC分类号： H01L21/28194 ,  H01L21/26586 ,  H01L21/28176 ,  H01L21/28202 ,  H01L29/511 ,  H01L29/512 ,  H01L29/513 ,  H01L29/516 ,  H01L29/517 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconductor device and a method of manufacturing the semiconductor device are disclosed. A semiconductor device of one of several disclosed embodiments comprises a semiconductor layer having a source region and a drain region, and a gate insulating film provided on the semiconductor layer between the source region and the drain region. The gate insulating film comprising an oxide including a metal element and further includes at least one element selected from the group consisting of nitrogen and aluminum as a first element. The content of the first element is relatively higher at both ends near the source region and the drain region than at a center of the gate insulating film. A gate electrode is provided on the gate insulating film.

摘要翻译： 公开了一种半导体器件及其制造方法。 几个公开的实施例之一的半导体器件包括具有源极区和漏极区的半导体层以及设置在源极区和漏极区之间的半导体层上的栅极绝缘膜。 所述栅极绝缘膜包括含有金属元素的氧化物，并且还包括选自由氮和铝组成的组中的至少一种元素作为第一元素。 在源极区域和漏极区域两端的第一元件的含量比在栅极绝缘膜的中心处的含量相对较高。 在栅极绝缘膜上设置栅电极。

公开(公告)号：US06403997B1

公开(公告)日：2002-06-11

申请号：US09621450

申请日：2000-07-21

申请人： Seiji Inumiya ,  Katsuhiko Hieda ,  Tetsuo Matsuda ,  Yoshio Ozawa

发明人： Seiji Inumiya ,  Katsuhiko Hieda ,  Tetsuo Matsuda ,  Yoshio Ozawa

IPC分类号： H01L2976

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/42368 ,  H01L29/4983 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66537 ,  H01L29/66545 ,  H01L29/6659

摘要： A method of manufacturing a semiconductor device comprising the steps of forming a dummy film and a dummy gate pattern at a predetermined gate-forming region on a semiconductor substrate, forming a first side wall insulating film on a side wall of the dummy gate pattern, forming an interlayer insulating film on a portion of the semiconductor substrate around the dummy gate pattern bearing the first side wall insulating film, forming a groove by removing the dummy gate pattern, removing a portion of dummy film exposed through the groove while leaving a portion of the first side wall insulating film as well as a portion of the dummy film disposed below the portion of the first side wall insulating film, forming a gate insulating film at least on a bottom surface of the groove, and forming a gate electrode on the gate insulating film formed in the groove.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在半导体衬底上的预定栅极形成区域形成虚设膜和伪栅极图案，在虚拟栅极图案的侧壁上形成第一侧壁绝缘膜，形成 在半导体衬底的围绕着具有第一侧壁绝缘膜的伪栅极图案的部分上的层间绝缘膜，通过去除伪栅极图案形成沟槽，去除通过沟槽暴露的一部分虚拟膜，同时留下一部分 第一侧壁绝缘膜以及设置在第一侧壁绝缘膜的部分下方的虚设膜的一部分，至少在槽的底面上形成栅极绝缘膜，并且在栅极绝缘上形成栅极电极 胶片形成在凹槽中。

公开(公告)号：US06251763B1

公开(公告)日：2001-06-26

申请号：US09106208

申请日：1998-06-29

申请人： Seiji Inumiya ,  Katsuhiko Hieda ,  Tetsuo Matsuda ,  Yoshio Ozawa

发明人： Seiji Inumiya ,  Katsuhiko Hieda ,  Tetsuo Matsuda ,  Yoshio Ozawa

IPC分类号： H01L213205

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/42368 ,  H01L29/4983 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66537 ,  H01L29/66545 ,  H01L29/6659

摘要： A method of manufacturing a semiconductor device comprising the steps of forming a dummy film and a dummy gate pattern at a predetermined gate-forming region on a semiconductor substrate, forming a first side wall insulating film on a side wall of the dummy gate pattern, forming an interlayer insulating film on a position of the semiconductor substrate around the dummy gate pattern bearing the first side wall insulating film, forming a groove by removing the dummy gate pattern, removing a portion of dummy film exposed through the groove while leaving a portion of the first side wall insulating film as well as a portion of the dummy film disposed below the portion of the first side wall insulating film, forming a gate insulating film at least on a bottom surface of the groove, and forming a gate electrode on the gate insulating film formed in the groove.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在半导体衬底上的预定栅极形成区域形成虚设膜和伪栅极图案，在虚拟栅极图案的侧壁上形成第一侧壁绝缘膜，形成 在半导体衬底周围的位于第一侧壁绝缘膜的伪栅极图案的位置上的层间绝缘膜，通过去除伪栅极图案形成沟槽，去除通过沟槽暴露的一部分虚拟膜，同时留下一部分 第一侧壁绝缘膜以及设置在第一侧壁绝缘膜的部分下方的虚设膜的一部分，至少在槽的底面上形成栅极绝缘膜，并且在栅极绝缘上形成栅极电极 胶片形成在凹槽中。