公开(公告)号：US20210301421A1

公开(公告)日：2021-09-30

申请号：US17263149

申请日：2019-07-24

Applicant: DENSO CORPORATION ,  TOYO TANSO CO., LTD. ,  TOYOTA TSUSHO CORPORATION

Inventor： Masatake NAGAYA ,  Takahiro KANDA ,  Takeshi OKAMOTO ,  Satoshi TORIMI ,  Satoru NOGAMI ,  Makoto KITABATAKE

IPC: C30B29/36 ,  H01L21/02 ,  C30B33/12 ,  C30B11/02 ,  C30B33/10 ,  B28D5/04

Abstract: An object is to provide a SiC wafer in which a detection rate of an optical sensor can improved and a SiC wafer manufacturing method.
The method includes: a satin finishing process S141 of satin-finishing at least a back surface 22 of a SiC wafer 20; an etching process 21 of etching at least the back surface 22 of the SiC wafer 20 by heating under Si vapor pressure after the satin finishing process S141; and a mirror surface processing process S31 of mirror-processing a main surface 21 of the SiC wafer 20 after the etching process S21. Accordingly, it is possible to obtain a SiC wafer having the mirror-finished main surface 21 and the satin-finished back surface 22.

公开(公告)号：US10903613B2

公开(公告)日：2021-01-26

申请号：US15305839

申请日：2015-04-07

Applicant: TOYO TANSO CO., LTD.

Inventor： Yoshikazu Kagawa ,  Hidenori Shirakawa

IPC: H01R39/20 ,  H01R39/26 ,  H01R43/12 ,  H02K13/00

Abstract: A carbonaceous material is fabricated by kneading of carbon powder and a binder. The carbonaceous material is granulated such that an average particle diameter of the carbonaceous material is 0.3 mm or more. A brush material is fabricated by mixing of the granulated carbonaceous material and metallic powder. A ratio of the metallic powder to a total weight of the brush material is adjusted to 1% by weight or more and 30% by weight or less. Pressure molding is performed on the fabricated brush material, and thermal processing is further performed on the brush material at a temperature at which a resin in the brush material is not carbonized.

公开(公告)号：US20200321140A1

公开(公告)日：2020-10-08

申请号：US16303744

申请日：2017-05-26

Applicant: TOYO TANSO CO., LTD.

Inventor： Toshihiro HOSOKAWA ,  Nobuya MISAKI ,  Kenta KURIHARA

IPC: H01B1/24 ,  B29D7/01 ,  C01B32/225 ,  C08F110/06 ,  C08K7/24 ,  C08K3/04 ,  C08J7/04 ,  C08J7/044 ,  C09D5/24 ,  C09D7/40 ,  C09D121/00

Abstract: Entrance of liquid is sufficiently prevented while electrical conductivity of a carbon material is maintained. A composite 1 includes a substrate 2 and a conductive layer 3 formed on the substrate 2. The substrate 2 includes: a carbon material including a carbon component; and hydrophobic resin.

公开(公告)号：US10675611B2

公开(公告)日：2020-06-09

申请号：US16083606

申请日：2017-01-18

Applicant: NISSAN MOTOR CO., LTD. ,  TOYO TANSO CO., LTD.

Inventor： Takehiko Okui ,  Hiroyuki Tanaka ,  Kazuki Arihara ,  Tetsuya Mashio ,  Atsushi Ohma ,  Takahiro Morishita ,  Yoshio Shodai

IPC: H01M4/96 ,  B01J21/18 ,  B01J23/42 ,  B01J35/10 ,  C01B32/00 ,  H01M4/92 ,  H01M4/86 ,  C01B32/20 ,  B01J35/00 ,  B01J37/08 ,  B01J37/34 ,  H01M4/90 ,  H01M8/1018

Abstract: Provided are a carbon powder which can provide a catalyst exhibiting high performance and a catalyst. A carbon powder for fuel cell comprising carbon as a main component, which has a ratio (B/A) of an area B of peak 1 to an area A of peak 0 of more than 0 and 0.15 or less, wherein the area A represents an area of peak 0 at a position of 2θ=22.5° to 25° as observed by XRD analysis when the carbon powder for fuel cell is subjected to heat treatment at 1800° C. for 1 hour in an inert atmosphere, and the area B represents an area of peak 1 at a position of 2θ=26° as observed by XRD analysis when the carbon powder for fuel cell is subjected to heat treatment at 1800° C. for 1 hour in an inert atmosphere.

公开(公告)号：US10665485B2

公开(公告)日：2020-05-26

申请号：US15766191

申请日：2016-10-06

Applicant: Toyo Tanso Co., Ltd.

Inventor： Satoshi Torimi ,  Masato Shinohara ,  Norihito Yabuki ,  Satoru Nogami

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/302 ,  H01L21/04 ,  H01L21/687

Abstract: A heat treatment container (1) is provided with support members (6) for supporting a disc-shaped SiC substrate (2), which is an object, at a time of an etching treatment of the SiC substrate (2). Each of the support members (6) has an inclined surface (6F) for supporting a lower surface end (2E) of the SiC substrate (2), the inclined surface being inclined so as to increasingly approach the centerline of the SiC substrate (2) going downward. More specifically, each of the support members (6) is formed in a conical shape with a diameter that increases going downward, and a conical surface which is the peripheral surface of each supporting member forms the inclined surface (6F). A vertically-middle section of the inclined surface (6F) contacts the lower surface end (2E) of the SiC substrate (2).

公开(公告)号：US20200095703A1

公开(公告)日：2020-03-26

申请号：US16495282

申请日：2018-03-20

Applicant: Toyo Tanso Co., Ltd.

Inventor： Satoshi Torimi ,  Yusuke Sudo ,  Masato Shinohara ,  Youji Teramoto ,  Takuya Sakaguchi ,  Satoru Nogami ,  Makoto Kitabatake

IPC: C30B25/18 ,  H01L21/02 ,  H01L29/34 ,  H01L29/16 ,  C30B25/20 ,  C30B29/36

Abstract: In a method for manufacturing a reformed SiC wafer 41 (a surface treatment method for a SiC wafer) having its surface that is reformed by processing an untreated SiC wafer 40 before formation of an epitaxial layer 42, the method includes a surface reforming step as described below. That is, the untreated SiC wafer 40 includes BPDs as dislocations parallel to an inside of a (0001) face, and TEDs. Property of the surface of the untreated SiC wafer 40 is changed so as to have higher rate in which portions having BPDs on the surface of the untreated SiC wafer 40 propagate as TEDs at a time of forming the epitaxial layer 42.

公开(公告)号：US10276877B2

公开(公告)日：2019-04-30

申请号：US15036301

申请日：2014-11-25

Applicant: NATIONAL INSTITUTE OF TECHNOLOGY ,  TOYO TANSO CO., LTD.

Inventor： Hiroshi Okano ,  Masashi Yoda ,  Takuro Tsuruoka ,  Toshihiro Hosokawa ,  Nobuya Misaki

IPC: H01M4/96 ,  H01M12/06 ,  H01M4/46 ,  H01M4/86 ,  H01M8/0234

Abstract: A positive electrode for an air battery and an air battery using the positive electrode are provided, that make it possible to inhibit an electrolyte solution decrease in the battery and prevent the problems associated with the electrolyte solution decrease without causing an increase in manufacturing costs.A positive electrode for an air battery includes an expanded graphite sheet. It is desirable that the expanded graphite sheet contain expanded graphite in an amount of 80 mass % or greater. It is desirable that the expanded graphite have a bulk density of from 0.2 Mg/m3 to 2.0 Mg/m3. It is desirable that the expanded graphite sheet have a thickness of from 0.1 mm to 3.0 mm.

公开(公告)号：US10014176B2

公开(公告)日：2018-07-03

申请号：US15527602

申请日：2015-11-17

Applicant: Toyo Tanso Co., Ltd.

Inventor： Norihito Yabuki ,  Satoshi Torimi ,  Satoru Nogami

IPC: H01L21/00 ,  H01L21/04 ,  H01L21/306

CPC classification number: H01L21/046 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3247 ,  H01L21/67115 ,  H01L21/67346 ,  H01L21/7602 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7813

Abstract: Provided is a SiC substrate treatment method for, with respect to a SiC substrate (40) that has, on its surface, grooves (41), activating ions while preventing roughening of the surface of the substrate. In the method, an ion activation treatment in which the SiC substrate (40) is heated under Si vapor pressure is performed to the SiC substrate (40) has, on its surface, an ion implantation region (46) in which ions have been implanted, and has the grooves (41) provided in a region including at least the ion implantation region (46), thereby ions that are implanted in the SiC substrate (40) is activated while etching the surface of the substrate.

公开(公告)号：US20170237080A1

公开(公告)日：2017-08-17

申请号：US15519025

申请日：2015-11-25

Applicant: TOYO TANSO CO., LTD.

Inventor： Toshihiro Hosokawa ,  Nobuya Misaki

IPC: H01M4/96 ,  H01M12/08

CPC classification number: H01M4/96 ,  C01B31/0423 ,  C01B32/225 ,  C01P2006/40 ,  H01M4/8668 ,  H01M12/06 ,  H01M12/08 ,  H01M2004/021 ,  H01M2004/8689 ,  Y02E60/128

Abstract: An expanded graphite sheet and a battery using the expanded graphite sheet are provided, that can inhibit the expanded graphite sheet from swelling even when the expanded graphite sheet is used for, for example, a positive electrode for an air battery. An expanded graphite sheet includes an expanded graphite and has a surface water contact angle of greater than or equal to 90 degrees and a surface resistivity of less than or equal to 70 mΩ/sq. It is desirable that a polyolefin resin be contained in the expanded graphite sheet in a dispersed state. It is desirable that the polyolefin resin be polypropylene.

公开(公告)号：US20170236905A1

公开(公告)日：2017-08-17

申请号：US15360498

申请日：2016-11-23

Applicant: TOYO TANSO CO., LTD.

Inventor： Satoshi Torimi ,  Masato Shinohara ,  Youji Teramoto ,  Norihito Yabuki ,  Satoru Nogami ,  Makoto Kitabatake

IPC: H01L29/16 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/04 ,  H01L23/544

CPC classification number: H01L29/1608 ,  H01L21/02008 ,  H01L21/02016 ,  H01L21/02019 ,  H01L21/0475 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/3065 ,  H01L23/544 ,  H01L2223/54433

Abstract: Provided is a method for manufacturing a thin SiC wafer by which a SiC wafer is thinned using a method without generating crack or the like, the method in which polishing after adjusting the thickness of the SiC wafer can be omitted. The method for manufacturing the thin SiC wafer 40 includes a thinning step. In the thinning step, the thickness of the SiC wafer 40 can be decreased to 100 μm or less by performing the Si vapor pressure etching in which the surface of the SiC wafer 40 is etched by heating the SiC wafer 40 after cutting out of an ingot 4 under Si vapor pressure.