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    METHOD AND DEVICE FOR CALIBRATING A MAGNETOMETER USING PARTIAL SAMPLING
    81.
    发明申请
    METHOD AND DEVICE FOR CALIBRATING A MAGNETOMETER USING PARTIAL SAMPLING 有权
    用于使用部分采样校准磁力计的方法和装置

    公开(公告)号：US20140303925A1

    公开(公告)日：2014-10-09

    申请号：US14242838

    申请日：2014-04-01

    Applicant: MCube Inc.

    Inventor： Andy Milota

    IPC: G01C25/00 ,  G01R35/00

    CPC classification number: G01C25/00 ,  G01C17/38 ,  G01R33/0035

    Abstract: A method and device for calibrating a magnetometer device. In an embodiment, the present invention provides a method to automatically calibrate a magnetometer device in the background with only limited movement in each of the three axis (approximately 20 degrees in each direction). A device implementing the present method will never get stuck in a lock-up state. Embodiments of the present invention provide a conservative and accurate magnetometer status indicator that is essential for indoor navigation using inertial sensors. The implemented algorithm is relatively low computationally intensive and is intelligent enough to know when it has the right kind and right amount of magnetic data before it initiates a calibration.

    Abstract translation: 一种用于校准磁力计装置的方法和装置。 在一个实施例中，本发明提供了一种在背景中自动地校准磁力计装置的方法，其中仅在三个轴线（每个方向上约20度）中仅有有限的运动。 实现本方法的装置将永远不会卡在锁定状态。 本发明的实施例提供了使用惯性传感器的室内导航所必需的保守和精确的磁力计状态指示器。 实现的算法计算密集度相对较低，并且足够智能，以便在启动校准之前知道其具有正确类型和数量的磁数据。

    METHOD AND STRUCTURE FOR ADDING MASS WITH STRESS ISOLATION TO MEMS STRUCTURES
    82.
    发明申请
    METHOD AND STRUCTURE FOR ADDING MASS WITH STRESS ISOLATION TO MEMS STRUCTURES 有权
    用于通过应力分离加入MEMS结构的方法和结构

    公开(公告)号：US20140199799A1

    公开(公告)日：2014-07-17

    申请号：US14217376

    申请日：2014-03-17

    Applicant: mCube Inc.

    Inventor： DANIEL N. KOURY, JR.

    IPC: B81C1/00

    CPC classification number: B81C1/00134 ,  B81C1/00142 ,  G01P15/0802 ,  H01L27/14609 ,  H01L27/14643 ,  H01L2924/01013

    Abstract: A method and structure for adding mass with stress isolation to MEMS. The structure has a thickness of silicon material coupled to at least one flexible element. The thickness of silicon material can be configured to move in one or more spatial directions about the flexible element(s) according to a specific embodiment. The apparatus also includes a plurality of recessed regions formed in respective spatial regions of the thickness of silicon material. Additionally, the apparatus includes a glue material within each of the recessed regions and a plug material formed overlying each of the recessed regions.

    Abstract translation: 一种将应力隔离加入MEMS的方法和结构。 该结构具有耦合到至少一个柔性元件的硅材料的厚度。 根据具体实施例，硅材料的厚度可被配置为围绕柔性元件在一个或多个空间方向上移动。 该设备还包括形成在硅材料厚度的相应空间区域中的多个凹陷区域。 此外，该设备包括在每个凹陷区域内的胶合材料和形成在每个凹进区域上的塞子材料。

    MULTI-AXIS INTEGRATED MEMS DEVICES WITH CMOS CIRCUITS AND METHOD THEREFOR
    83.
    发明申请
    MULTI-AXIS INTEGRATED MEMS DEVICES WITH CMOS CIRCUITS AND METHOD THEREFOR 有权
    具有CMOS电路的多轴集成MEMS器件及其方法

    公开(公告)号：US20140162393A1

    公开(公告)日：2014-06-12

    申请号：US14084415

    申请日：2013-11-19

    Applicant: MCube Inc.

    Inventor： Xiao "Charles" Yang

    IPC: B81C1/00

    CPC classification number: B81C1/0023 ,  B81B7/02 ,  B81C1/00246 ,  B81C2203/0771 ,  H01L27/0688 ,  H01L27/14603 ,  H01L2224/48091 ,  H01L2924/16235 ,  H01L2924/00014

    Abstract: An integrated multi-axis mechanical device and integrated circuit system. The integrated system can include a silicon substrate layer, a CMOS device region, four or more mechanical devices, and a wafer level packaging (WLP) layer. The CMOS layer can form an interface region, on which any number of CMOS and mechanical devices can be configured. The mechanical devices can include MEMS devices configured for multiple axes or for at least a first direction. The CMOS layer can be deposited on the silicon substrate and can include any number of metal layers and can be provided on any type of design rule. The integrated MEMS devices can include, but not exclusively, any combination of the following types of sensors: magnetic, pressure, humidity, temperature, chemical, biological, or inertial. Furthermore, the overlying WLP layer can be configured to hermetically seal any number of these integrated devices.

    Abstract translation: 集成多轴机械装置和集成电路系统。 集成系统可以包括硅衬底层，CMOS器件区域，四个或更多个机械器件以及晶片级封装（WLP）层。 CMOS层可以形成接口区域，可以在其上配置任何数量的CMOS和机械装置。 机械装置可以包括被配置用于多个轴或至少第一方向的MEMS装置。 CMOS层可以沉积在硅衬底上，并且可以包括任何数量的金属层，并且可以以任何类型的设计规则提供。 集成MEMS器件可以包括但不限于以下类型的传感器的任何组合：磁性，压力，湿度，温度，化学，生物或惯性。 此外，覆盖的WLP层可以被配置为密封任何数量的这些集成设备。

    THREE AXIS MAGNETIC SENSOR DEVICE AND METHOD
    84.
    发明申请
    THREE AXIS MAGNETIC SENSOR DEVICE AND METHOD 有权
    三轴磁传感器装置及方法

    公开(公告)号：US20130285651A1

    公开(公告)日：2013-10-31

    申请号：US13924457

    申请日：2013-06-21

    Applicant: MCube Inc.

    Inventor： Hong Wan ,  Xiao (Charles) Yang

    IPC: G01R33/09 ,  G01R33/02

    CPC classification number: G01R33/093 ,  G01R33/0206 ,  G01R33/0286 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

    Abstract: A method and structure for a three-axis magnetic field sensing device is provided. The device includes a substrate, an IC layer, and preferably three magnetic field sensors coupled to the IC layer. A nickel-iron magnetic field concentrator is also provided.

    Abstract translation: 提供了一种三轴磁场感测装置的方法和结构。 该器件包括衬底，IC层，并且优选地耦合到IC层的三个磁场传感器。 还提供了镍铁磁场集中器。

    METHODS AND STRUCTURES OF INTEGRATED MEMS-CMOS DEVICES
    86.
    发明申请
    METHODS AND STRUCTURES OF INTEGRATED MEMS-CMOS DEVICES 有权
    集成MEMS-CMOS器件的方法和结构

    公开(公告)号：US20130236988A1

    公开(公告)日：2013-09-12

    申请号：US13788503

    申请日：2013-03-07

    Applicant: MCUBE, INC.

    Inventor： Sudheer S. Sridharamurthy ,  Te-Hse Terrence Lee ,  Ali J. Rastegar ,  Mugurel Stancu ,  Xiao Charles Yang

    IPC: H01L29/66

    CPC classification number: B81C1/00801 ,  B81B3/0013 ,  B81B3/0086 ,  B81B7/0022 ,  B81B7/0064 ,  B81B2203/0163 ,  B81B2207/094 ,  B81C1/00238 ,  B81C2201/0132 ,  B81C2201/05 ,  B81C2203/0735 ,  H01L27/0688

    Abstract: A method for fabricating an integrated MEMS-CMOS device uses a micro-fabrication process that realizes moving mechanical structures (MEMS) on top of a conventional CMOS structure by bonding a mechanical structural wafer on top of the CMOS and etching the mechanical layer using plasma etching processes, such as Deep Reactive Ion Etching (DRIE). During etching of the mechanical layer, CMOS devices that are directly connected to the mechanical layer are exposed to plasma. This sometimes causes permanent damage to CMOS circuits and is termed Plasma Induced Damage (PID). Embodiments of the present invention presents methods and structures to prevent or reduce this PID and protect the underlying CMOS circuits by grounding and providing an alternate path for the CMOS circuits until the MEMS layer is completely etched.

    Abstract translation: 一种用于制造集成的MEMS-CMOS器件的方法使用微型制造工艺，其通过在CMOS的顶部上结合机械结构晶片并使用等离子体蚀刻来蚀刻机械层来实现在常规CMOS结构之上的移动机械结构（MEMS） 工艺，如深层反应离子蚀刻（DRIE）。 在蚀刻机械层期间，直接连接到机械层的CMOS器件暴露于等离子体。 这有时会导致对CMOS电路的永久性损坏，称为等离子体诱发损伤（PID）。 本发明的实施例提出了防止或减少该PID并且通过接地并为CMOS电路提供替代路径来保护下面的CMOS电路直到MEMS层被完全蚀刻的方法和结构。

    Low power inertial sensor architecture and methods
    87.
    发明授权
    Low power inertial sensor architecture and methods 有权

    公开(公告)号：US11236999B1

    公开(公告)日：2022-02-01

    申请号：US16566793

    申请日：2019-09-10

    Applicant: mCube, Inc.

    Inventor： Sanjay Bhandari ,  Chia-Din Ting

    IPC: G01C19/56 ,  G01C19/5656 ,  G01C19/5649

    Abstract: A controller for a MEMS gyroscope includes a first portion for generating a drive signal in response to an output from drive capacitors of the MEMS gyroscope, wherein the output signal has a resonant frequency and a phase, a second portion for determining a sampling signal in response to the output, wherein the sampling signal has a frequency that is a multiple of the resonant frequency, and has the phase, a multiplexer for outputting a multiplexed data comprising first data signals from first capacitors and second capacitors of the MEMS gyroscope multiplexed in response to the sampling signal, and a processing portion for reducing the resonant frequency from the multiplexed data.

    Apparatus and methods for integrated MEMS devices
    88.
    发明授权
    Apparatus and methods for integrated MEMS devices 有权

    公开(公告)号：US10046966B2

    公开(公告)日：2018-08-14

    申请号：US15479154

    申请日：2017-04-04

    Applicant: mCube, Inc.

    Inventor： Ben Lee ,  Ming Hong Kuo ,  Wen-Chih Chen ,  Wensen Tsai

    IPC: G01R31/26 ,  B81C99/00 ,  G01R1/04

    Abstract: A method for a MEMS device includes receiving a diced wafer having a plurality devices disposed upon an adhesive substrate and having an associated known good device data, removing a first set of devices from the plurality of devices from the adhesive substrate in response to the known good device data, picking and placing a first set of the devices into a plurality of sockets within a testing platform, testing the first set of integrated devices includes while physically stressing the first set of devices, providing electrical power to the first set of devices and receiving electrical response data from the first set of devices, determining a second set of devices from the first set of devices, in response to the electrical response data, picking and placing the second set of devices into a transport tape media.

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