公开(公告)号：US20050051776A1

公开(公告)日：2005-03-10

申请号：US10867226

申请日：2004-06-15

申请人： Noriko Miyagi ,  Masayuki Sakakura ,  Tatsuya Arao ,  Ritsuko Nagao ,  Yoshifumi Tanada

发明人： Noriko Miyagi ,  Masayuki Sakakura ,  Tatsuya Arao ,  Ritsuko Nagao ,  Yoshifumi Tanada

IPC分类号： G09G3/32 ,  H01L27/32 ,  H01L29/04 ,  H01L51/52

CPC分类号： H01L27/124 ,  G02F1/133345 ,  G09G3/3233 ,  G09G2300/0842 ,  G09G2300/0861 ,  H01L23/5228 ,  H01L27/1222 ,  H01L27/1248 ,  H01L27/3276 ,  H01L27/3279 ,  H01L33/40 ,  H01L51/5206 ,  H01L51/5212 ,  H01L51/5221 ,  H01L51/5228 ,  H01L51/5234 ,  H01L2251/5315

摘要： An object of the present invention is to decrease substantial resistance of an electrode such as a transparent electrode or a wiring, and furthermore, to provide a display device for which is possible to apply same voltage to light-emitting elements. In the invention, a auxiliary wiring that is formed in one layer in which a conductive film of a semiconductor element such as an electrode, wiring, a signal line, a scanning line, or a power supply line is connected to an electrode typified by a second electrode, and a wiring. It is preferable that the auxiliary wiring is formed into a conductive film to include low resistive material, especially, formed to include lower resistive material than the resistance of an electrode and a wiring that is required to reduce the resistance.

摘要翻译： 本发明的一个目的是降低诸如透明电极或布线的电极的实质电阻，此外，提供一种可以向发光元件施加相同电压的显示装置。 在本发明中，形成在电极，布线，信号线，扫描线或电源线等半导体元件的导电膜的一层中形成的辅助布线连接到以 第二电极和布线。 优选地，辅助布线形成为包括低电阻材料的导电膜，特别地，形成为包括比电阻的阻抗更低的电阻材料和降低电阻所需的布线。

公开(公告)号：US06646287B1

公开(公告)日：2003-11-11

申请号：US09714891

申请日：2000-11-17

申请人： Koji Ono ,  Hideomi Suzawa ,  Tatsuya Arao

发明人： Koji Ono ,  Hideomi Suzawa ,  Tatsuya Arao

IPC分类号： H01L29786

CPC分类号： H01L27/1222 ,  G02F1/13624 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L33/08 ,  H01L33/62 ,  H01L2029/7863 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconductor device, the manufacturing cost is reduced and the yield is increased by reducing the number of process steps. A semiconductor device has a semiconductor layer, an insulating film formed contacting the semiconductor layer, and a gate electrode having a tapered portion on the insulating film, in the semiconductor device, the semiconductor layer has a channel forming region, a first impurity region for forming a source region or a drain region and containing a single conductivity type impurity element, and a second impurity region for forming an LDD region contacting the channel forming region, a portion of the second impurity region is formed overlapping a gate electrode, and the concentration of the single conductivity type impurity element contained in the second impurity region becomes larger with distance from the channel forming region.

摘要翻译： 在半导体器件（通常为有源矩阵显示器件）中，根据电路的功能，布置在各个电路中的TFT的结构是合适的，并且随着半导体器件的工作特性和可靠性的提高，制造 降低成本，并通过减少工艺步骤的数量来提高产量。 半导体器件具有半导体层，与半导体层接触形成的绝缘膜和在绝缘膜上具有锥形部分的栅电极，在半导体器件中，半导体层具有沟道形成区，形成第一杂质区 源极区域或漏极区域，并且包含单一导电型杂质元素，以及用于形成与沟道形成区域接触的LDD区域的第二杂质区域，第二杂质区域的一部分与栅电极重叠，并且浓度 包含在第二杂质区域中的单一导电型杂质元素随着与沟道形成区域的距离而变大。

公开(公告)号：US08502231B2

公开(公告)日：2013-08-06

申请号：US13474993

申请日：2012-05-18

申请人： Tatsuya Arao

发明人： Tatsuya Arao

IPC分类号： H01L29/12

CPC分类号： G02F1/136209 ,  G02F1/136213 ,  G02F1/136227 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78633

摘要： To realize a semiconductor device including a capacitor element capable of obtaining a sufficient capacitor without reducing an opening ratio, in which a pixel electrode is flattened in order to control a defect in orientation of liquid crystal. A semiconductor device of the present invention includes a light-shielding film formed on the thin film transistor, a capacitor insulating film formed on the light-shielding film, a conductive layer formed on the capacitor insulating film, and a pixel electrode that is formed so as to be electrically connected to the conductive layer, in which a storage capacitor element comprises the light-shielding film, the capacitor insulating film, and the conductive layer, whereby an area of a region serving as the capacitor element can be increased.

公开(公告)号：US08183569B2

公开(公告)日：2012-05-22

申请号：US13103474

申请日：2011-05-09

申请人： Tatsuya Arao

发明人： Tatsuya Arao

IPC分类号： H01H29/12

CPC分类号： G02F1/136209 ,  G02F1/136213 ,  G02F1/136227 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78633

摘要： To realize a semiconductor device including a capacitor element capable of obtaining a sufficient capacitor without reducing an opening ratio, in which a pixel electrode is flattened in order to control a defect in orientation of liquid crystal. A semiconductor device of the present invention includes a light-shielding film formed on the thin film transistor, a capacitor insulating film formed on the light-shielding film, a conductive layer formed on the capacitor insulating film, and a pixel electrode that is formed so as to be electrically connected to the conductive layer, in which a storage capacitor element comprises the light-shielding film, the capacitor insulating film, and the conductive layer, whereby an area of a region serving as the capacitor element can be increased.

摘要翻译： 为了实现包括能够获得足够的电容器而不降低开口率的电容器元件的半导体器件，其中像素电极被平坦化以便控制液晶取向的缺陷。 本发明的半导体器件包括形成在薄膜晶体管上的遮光膜，形成在遮光膜上的电容器绝缘膜，形成在电容器绝缘膜上的导电层，以及形成为这样的像素电极 为了与导电层电连接，其中存储电容器元件包括遮光膜，电容器绝缘膜和导电层，由此可以增加用作电容器元件的区域的面积。

公开(公告)号：US20120086006A1

公开(公告)日：2012-04-12

申请号：US13271272

申请日：2011-10-12

申请人： Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi

发明人： Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto ,  Kazuo Nishi ,  Yuusuke Sugawara ,  Hironobu Takahashi

IPC分类号： H01L31/0232

CPC分类号： H01L27/14632 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14692

摘要： Techniques are provided for obtaining a photoelectric conversion device having a favorable spectral sensitivity characteristic and reduced variation in output current without a contamination substance mixed into a photoelectric conversion layer or a transistor, and for obtaining a highly reliable semiconductor device including a photoelectric conversion device. A semiconductor device may include, over an insulating surface, a first electrode; a second electrode; a color filter between the first electrode and the second electrode; an overcoat layer covering the color filter; and a photoelectric conversion layer over the overcoat layer, where one end portion of the photoelectric conversion layer is in contact with the first electrode, and where an end portion of the color filter lies inside the other end portion of the photoelectric conversion layer.

摘要翻译： 提供了用于获得具有良好的光谱灵敏度特性和减少的输出电流变化的光电转换装置的技术，而没有混入光电转换层或晶体管中的污染物质，并且用于获得包括光电转换装置的高度可靠的半导体装置。 半导体器件可以在绝缘表面上包括第一电极; 第二电极; 在第一电极和第二电极之间的滤色器; 覆盖滤色器的外涂层; 以及在所述外涂层上的光电转换层，其中所述光电转换层的一个端部与所述第一电极接触，并且所述滤色器的端部位于所述光电转换层的另一端部的内部。

公开(公告)号：US08138004B2

公开(公告)日：2012-03-20

申请号：US12821201

申请日：2010-06-23

申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

IPC分类号： H01L21/00

CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

摘要： A manufacturing method of a photoelectric conversion device includes the following steps: forming a first electrode over a substrate; and, over the first electrode, forming a photoelectric conversion layer that includes a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode. The manufacturing method further includes the step of removing a part of the second semiconductor layer and a part of the third semiconductor layer in a region of the photoelectric conversion layer so that the third semiconductor layer does not overlap the first electrode.

摘要翻译： 光电转换装置的制造方法包括以下步骤：在基板上形成第一电极; 并且在所述第一电极上形成光电转换层，所述光电转换层包括具有一个导电性的第一导电层，第二半导体层和具有与所述第一电极上的所述第二半导体层的一个电导率相反的导电性的第三半导体层。 该制造方法还包括在光电转换层的区域中去除第二半导体层的一部分和第三半导体层的一部分的步骤，使得第三半导体层不与第一电极重叠。

公开(公告)号：US08049157B2

公开(公告)日：2011-11-01

申请号：US12949301

申请日：2010-11-18

申请人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

发明人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

IPC分类号： H03F3/08 ,  H03K17/78 ,  H01J40/14 ,  H04N3/14 ,  H01L31/062

CPC分类号： H01L31/102 ,  G01J1/44 ,  H01L31/145 ,  H04N5/2351

摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.

摘要翻译： 本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分 或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。 根据这样的光电转换装置，能够检测弱光到强光的光。

公开(公告)号：US07985664B2

公开(公告)日：2011-07-26

申请号：US12627473

申请日：2009-11-30

申请人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

发明人： Yoshikazu Hiura ,  Hiroki Adachi ,  Hironobu Takahashi ,  Yuusuke Sugawara ,  Tatsuya Arao ,  Kazuo Nishi ,  Yasuyuki Arai

IPC分类号： H01L21/20 ,  C23C16/54

CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/458 ,  C23C16/545 ,  H05H1/2406 ,  H05H2001/2431 ,  H05H2001/485 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention relates to a film formation apparatus including a first transfer chamber having a roller for sending a substrate, a film formation chamber having a discharging electrode, a buffer chamber provided between the transfer chamber and the film formation chamber or between the film formation chambers, a slit provided in a portion where the substrate comes in and out in the buffer chamber, and a second transfer chamber having a roller for rewinding the substrate. The slit is provided with at least one touch roller, and the touch roller is in contact with a film formation surface of the substrate. In addition, the present invention also relates to a method for forming a film and a method for manufacturing a photoelectric conversion device that are performed by using such a film formation apparatus.

摘要翻译： 成膜装置技术领域本发明涉及一种成膜装置，其特征在于，包括具有用于送出基板的辊的第一转印室，具有排出电极的成膜室，设置在转印室和成膜室之间或成膜室之间的缓冲室 设置在衬底在缓冲室中进出的部分的狭缝，以及具有用于重新卷绕衬底的辊的第二传送室。 狭缝设置有至少一个触摸辊，并且触摸辊与基板的成膜表面接触。 此外，本发明还涉及一种用于形成膜的方法和通过使用这种成膜装置进行的光电转换装置的制造方法。

公开(公告)号：US20100330729A1

公开(公告)日：2010-12-30

申请号：US12821201

申请日：2010-06-23

申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

IPC分类号： H01L31/18 ,  H01L31/0232

CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

摘要： The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.

摘要翻译： 本发明提供抑制漏电流的光电转换装置。 本发明的光电转换装置包括：基板上的第一电极; 光电转换层，包括具有一个导电性的第一导电层，第二半导体层和具有与第一电极上的第二半导体层的一个导电率相反的导电性的第三半导体层，其中第一电极的端部为 覆盖第一半导体层; 在所述第三半导体膜上形成绝缘膜和在所述绝缘膜上与所述第三半导体膜电绝缘膜电连接的第二电极，并且其中所述第二半导体层的一部分和所述第三半导体的一部分 在光电转换层的未被绝缘膜覆盖的区域中去除层。

公开(公告)号：US07622785B2

公开(公告)日：2009-11-24

申请号：US11737477

申请日：2007-04-19

申请人： Shinya Sasagawa ,  Shinya Hasegawa ,  Hidekazu Takahashi ,  Tatsuya Arao

发明人： Shinya Sasagawa ,  Shinya Hasegawa ,  Hidekazu Takahashi ,  Tatsuya Arao

IPC分类号： H01L31/075 ,  H01L31/18

CPC分类号： H01L31/035281 ,  H01L21/32136 ,  H01L21/32137 ,  H01L27/14643 ,  Y02E10/50

摘要： An object is to provide a photoelectric conversion element having a side surface with different taper angles by conducting etching of a photoelectric conversion layer step-by-step. A pin photodiode has a high response speed compared with a pn photodiode but has a disadvantage of large dark current. One cause of the dark current is considered to be conduction through an etching residue which is generated in etching and deposited on a side surface of the photoelectric conversion layer. Leakage current of the photoelectric conversion element is reduced by forming a structure in which a side surface has two different tapered shapes, which conventionally has a uniform surface, so that the photoelectric conversion layer has a side surface of a p-layer and a side surface of an n-layer, which are not in the same plane.

摘要翻译： 本发明的目的是提供一种具有不同锥角的侧面的光电转换元件，该光电转换元件逐步进行光电转换层的蚀刻。 与pn光电二极管相比，pin光电二极管具有高响应速度，但是具有大的暗电流的缺点。 认为暗电流的一个原因是通过在蚀刻中产生并沉积在光电转换层的侧表面上的蚀刻残余物导电。 光电转换元件的泄漏电流通过形成侧表面具有两个不同的锥形形状的结构而降低，通常具有均匀的表面，使得光电转换层具有p层的侧表面和侧表面 的n层，它们不在同一平面。