公开(公告)号：US20090267233A1

公开(公告)日：2009-10-29

申请号：US12470344

申请日：2009-05-21

申请人： Sang-Yun Lee

发明人： Sang-Yun Lee

IPC分类号： H01L23/48 ,  H01L21/30

CPC分类号： H01L21/2007 ,  H01L21/8221 ,  H01L24/29 ,  H01L24/83 ,  H01L27/0688 ,  H01L2224/291 ,  H01L2224/8385 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01093 ,  H01L2924/0132 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/07802 ,  H01L2924/12036 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/01014 ,  H01L2924/01031 ,  H01L2924/3512 ,  H01L2924/00

摘要： A bonded semiconductor structure static random access memory circuit includes a support substrate which carries a first horizontally oriented transistor, and an interconnect region which includes a conductive line. The memory circuit includes a donor substrate which includes a semiconductor layer stack coupled to a donor substrate body region through a detach region, wherein the semiconductor layer stack is coupled to the interconnect region through a bonding interface, and wherein the semiconductor layer stack includes a pn junction.

摘要翻译： 键合半导体结构静态随机存取电路包括承载第一水平取向晶体管的支撑衬底和包括导线的互连区域。 存储器电路包括施主衬底，该施主衬底包括通过脱离区耦合到施主衬底主体区域的半导体层堆叠，其中半导体层堆叠通过结合界面耦合到互连区域，并且其中半导体层堆叠包括pn 交界处

公开(公告)号：US20090129359A1

公开(公告)日：2009-05-21

申请号：US11911840

申请日：2005-04-19

申请人： Sang-Yun Lee ,  Jae-Young Ju ,  Hee-Hyeok Hahm ,  Young-Ho Joo ,  Bum-Soo Shin ,  Kyeong-Hee Han

发明人： Sang-Yun Lee ,  Jae-Young Ju ,  Hee-Hyeok Hahm ,  Young-Ho Joo ,  Bum-Soo Shin ,  Kyeong-Hee Han

IPC分类号： H04B7/216

CPC分类号： H04W36/14

摘要： The present invention relates to a method of performing handover from an asynchronous mobile communication network to a synchronous mobile communication network. If the access network of the asynchronous mobile communication network (100) requests handover to an MSC (104) of the asynchronous mobile communication network, the MSC requests/receives subscriber information of the mobile communication terminal from a dual-stack HLR (300), and transmits a handover request message to the synchronous mobile communication network (200). The MSC (203) of the synchronous mobile communication network assigns a forward channel to the mobile communication terminal. The asynchronous mobile communication network (100) transmits a handover instruction message to the asynchronous RF device of the mobile communication terminal. Accordingly, the mobile communication terminal sets up a synchronous RF device, connects to the synchronous mobile communication network through reverse channel assignment and synchronization. The mobile communication terminal transmits a handover completion message to the synchronous mobile communication network.

摘要翻译： 本发明涉及一种执行从异步移动通信网络到同步移动通信网络的切换的方法。 如果异步移动通信网络（100）的接入网络请求切换到异步移动通信网络的MSC（104），则MSC从双栈HLR（300）请求/接收移动通信终端的用户信息， 并向同步移动通信网络（200）发送切换请求消息。 同步移动通信网络的MSC（203）向移动通信终端分配前向信道。 异步移动通信网络（100）向移动通信终端的异步RF设备发送切换指示消息。 因此，移动通信终端设置同步RF设备，通过反向信道分配和同步连接到同步移动通信网络。 移动通信终端向同步移动通信网络发送切换完成消息。

公开(公告)号：US20090126857A1

公开(公告)日：2009-05-21

申请号：US11940912

申请日：2007-11-15

申请人： Hyun-Ok SHIN ,  Sung-Hun Choi ,  Sang-Yun Lee

发明人： Hyun-Ok SHIN ,  Sung-Hun Choi ,  Sang-Yun Lee

IPC分类号： C03B29/00

CPC分类号： B28D5/0011 ,  B32B18/00 ,  C04B2237/32 ,  C04B2237/62 ,  C04B2237/64 ,  C04B2237/68 ,  H01L21/4807 ,  H01L23/13 ,  H01L23/147 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method of manufacturing a low-temperature co-fired ceramics (LTCC) substrate includes the following steps of: preparing a plurality of ceramic sheets; forming a plurality of zones and at least one cutting pattern on each of the ceramic sheets, wherein the cutting pattern is formed between neighboring two of the zones; forming at least one conductive pattern on at least one of the ceramic sheets; and stacking the ceramic sheets.

摘要翻译： 制造低温共烧陶瓷（LTCC）基板的方法包括以下步骤：制备多个陶瓷片; 在每个陶瓷片上形成多个区域和至少一个切割图案，其中在相邻的两个区域之间形成切割图案; 在至少一个所述陶瓷片上形成至少一个导电图案; 并堆叠陶瓷片。

公开(公告)号：US20080265360A1

公开(公告)日：2008-10-30

申请号：US12165445

申请日：2008-06-30

申请人： Sang-Yun Lee

发明人： Sang-Yun Lee

IPC分类号： H01L27/06

CPC分类号： H01L21/2007 ,  H01L21/6835 ,  H01L21/84 ,  H01L24/29 ,  H01L24/83 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/108 ,  H01L27/11 ,  H01L27/11551 ,  H01L29/66666 ,  H01L29/7827 ,  H01L2221/6835 ,  H01L2224/291 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01049 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01093 ,  H01L2924/07802 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  Y10S257/928 ,  H01L2924/00

摘要： A semiconductor layer structure includes a donor substrate and a detach region carried by the donor substrate. A device structure is carried by the donor substrate and positioned proximate to the detach region. The device structure includes a stack of crystalline semiconductor layers. The stack of crystalline semiconductor layers includes a pn junction.

摘要翻译： 半导体层结构包括施主衬底和由供体衬底承载的剥离区域。 器件结构由施主衬底承载并定位成靠近分离区。 器件结构包括一堆结晶半导体层。 晶体半导体层的堆叠包括pn结。

公开(公告)号：US20080038902A1

公开(公告)日：2008-02-14

申请号：US11873851

申请日：2007-10-17

申请人： Sang-Yun Lee

发明人： Sang-Yun Lee

IPC分类号： H01L21/30

CPC分类号： H01L21/2007 ,  H01L21/187 ,  H01L21/6835 ,  H01L21/76829 ,  H01L23/48 ,  H01L24/29 ,  H01L24/83 ,  H01L27/0688 ,  H01L27/1027 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/11 ,  H01L27/1116 ,  H01L27/11551 ,  H01L2221/68368 ,  H01L2224/291 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01049 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01093 ,  H01L2924/0132 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01031 ,  H01L2924/00

摘要： The present invention provides a method of coupling substrates together. The method includes providing first and second substrates and then coupling the first and second substrates together. One of the first and second substrates includes devices with an interconnect region positioned thereon and the other substrate carries a device structure.

摘要翻译： 本发明提供一种将衬底连接在一起的方法。 该方法包括提供第一和第二基板，然后将第一和第二基板耦合在一起。 第一和第二基板中的一个包括其上定位有互连区域的装置，另一个基板承载装置结构。

公开(公告)号：US20080032463A1

公开(公告)日：2008-02-07

申请号：US11873769

申请日：2007-10-17

申请人： Sang-Yun Lee

发明人： Sang-Yun Lee

IPC分类号： H01L21/332

CPC分类号： H01L21/2007 ,  H01L21/8221 ,  H01L23/48 ,  H01L24/29 ,  H01L24/83 ,  H01L27/0688 ,  H01L27/1027 ,  H01L27/11 ,  H01L27/11551 ,  H01L29/742 ,  H01L2224/291 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00

摘要： A method of forming a circuit includes providing a substrate; providing an interconnect region positioned on the substrate; bonding a device structure to a surface of the interconnect region; and processing the device structure to form a first stack of layers on the interconnect region and a second stack of layers on the first stack. The width of the first stack is different than the width of the second stack.

摘要翻译： 形成电路的方法包括：提供衬底; 提供位于所述基板上的互连区域; 将器件结构接合到所述互连区域的表面; 以及处理所述器件结构以在所述互连区域上形成第一层层，以及在所述第一层叠上形成第二层叠层。 第一堆叠的宽度不同于第二堆叠的宽度。

公开(公告)号：US20050280156A1

公开(公告)日：2005-12-22

申请号：US11180286

申请日：2005-07-12

申请人： Sang-Yun Lee

发明人： Sang-Yun Lee

IPC分类号： H01L21/20 ,  H01L21/30 ,  H01L21/336 ,  H01L21/46 ,  H01L21/58 ,  H01L23/48 ,  H01L27/108 ,  H01L27/148

CPC分类号： H01L21/2007 ,  H01L23/48 ,  H01L24/29 ,  H01L24/83 ,  H01L27/0688 ,  H01L27/11551 ,  H01L2224/291 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00

摘要： An apparatus includes a semiconductor chip with a base support structure having a surface and an opposed surface. At least one device structure extends from the surface of the base support structure. A first conductive region is coupled to the base support structure. At least a portion of the first conductive region extends below the opposed surface.

摘要翻译： 一种装置包括具有表面和相对表面的基座支撑结构的半导体芯片。 至少一个装置结构从基部支撑结构的表面延伸。 第一导电区域耦合到基座支撑结构。 第一导电区域的至少一部分在相对表面的下方延伸。

公开(公告)号：US20050280155A1

公开(公告)日：2005-12-22

申请号：US11092501

申请日：2005-03-29

申请人： Sang-Yun Lee

发明人： Sang-Yun Lee

IPC分类号： H01L21/20 ,  H01L21/30 ,  H01L21/336 ,  H01L21/46 ,  H01L21/58 ,  H01L23/48 ,  H01L27/108 ,  H01L27/148

CPC分类号： H01L21/2007 ,  H01L21/187 ,  H01L21/6835 ,  H01L21/76829 ,  H01L23/48 ,  H01L24/29 ,  H01L24/83 ,  H01L27/0688 ,  H01L27/1027 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/11 ,  H01L27/1116 ,  H01L27/11551 ,  H01L2221/68368 ,  H01L2224/291 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01049 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01093 ,  H01L2924/0132 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01031 ,  H01L2924/00

摘要： The present invention provides a method of coupling substrates together. The method includes providing first and second substrates and then coupling the first and second substrates together. One of the first and second substrates includes devices with an interconnect region positioned thereon and the other substrate carries a device structure.

摘要翻译： 本发明提供一种将衬底连接在一起的方法。 该方法包括提供第一和第二基板，然后将第一和第二基板耦合在一起。 第一和第二基板中的一个包括其上定位有互连区域的装置，另一个基板承载装置结构。

公开(公告)号：US20050280154A1

公开(公告)日：2005-12-22

申请号：US11092500

申请日：2005-03-29

申请人： Sang-Yun Lee

发明人： Sang-Yun Lee

IPC分类号： H01L21/20 ,  H01L21/30 ,  H01L21/336 ,  H01L21/46 ,  H01L21/58 ,  H01L23/48 ,  H01L27/108 ,  H01L27/148

CPC分类号： H01L21/2007 ,  H01L21/8221 ,  H01L23/48 ,  H01L24/29 ,  H01L24/83 ,  H01L27/0688 ,  H01L27/1027 ,  H01L27/11 ,  H01L27/11551 ,  H01L29/742 ,  H01L2224/291 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01056 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/00

摘要： A method of forming a circuit includes providing a substrate; providing an interconnect region positioned on the substrate; bonding a device structure to a surface of the interconnect region; and processing the device structure to form a first stack of layers on the interconnect region and a second stack of layers on the first stack. The width of the first stack is different than the width of the second stack.

摘要翻译： 形成电路的方法包括：提供衬底; 提供位于所述基板上的互连区域; 将器件结构接合到所述互连区域的表面; 以及处理所述器件结构以在所述互连区域上形成第一层层，以及在所述第一层叠上形成第二层叠层。 第一堆叠的宽度不同于第二堆叠的宽度。

公开(公告)号：US20220130963A1

公开(公告)日：2022-04-28

申请号：US17122219

申请日：2020-12-15

申请人： Sang-Yun Lee Lee

发明人： Sang-Yun Lee

IPC分类号： H01L29/40 ,  H01L29/06 ,  H01L27/108 ,  H01L29/66

摘要： Structures and methods that facilitate the formation of gate contacts for vertical transistors constructed with semiconductor pillars and spacer-like gates are disclosed. In a first embodiment, a gate contact rests on an extended gate region, a piece of a gate film, patterned at a side of a vertical transistor at the bottom of the gate. In a second embodiment, an extended gate region is patterned on top of one or more vertical transistors, resulting in a modified transistor structure. In a third embodiment, a gate contact rests on a top surface of a gate merged between two closely spaced vertical transistors. Optional methods and the resultant intermediate structures are included in the first two embodiments in order to overcome the related topography and ease the photolithography. The third embodiment includes alternatives for isolating the gate contact from the semiconductor pillars or for isolating the affected semiconductor pillars from the substrate.