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    Non-directional dithering methods
    81.
    发明授权
    Non-directional dithering methods 有权
    非定向抖动方法

    公开(公告)号：US08584057B2

    公开(公告)日：2013-11-12

    申请号：US13409653

    申请日：2012-03-01

    Applicant: Pei-Yi Liu ,  Shy-Jay Lin ,  Wen-Chuan Wang ,  Jaw-Jung Shin ,  Burn Jeng Lin

    Inventor： Pei-Yi Liu ,  Shy-Jay Lin ,  Wen-Chuan Wang ,  Jaw-Jung Shin ,  Burn Jeng Lin

    IPC: G06F17/50 ,  G06F19/00 ,  G03F1/00 ,  G21K5/00

    CPC classification number: G03F7/00 ,  G03F1/00 ,  G03F7/70433 ,  G06F17/5081 ,  G06F19/00 ,  G21K5/00

    Abstract: A method of data preparation in lithography processes is described. The method includes providing an integrated circuit (IC) layout design in a graphic database system (GDS) grid, converting the IC layout design GDS grid to a first exposure grid, applying a non-directional dither technique to the first exposure, coincident with applying dithering to the first expose grid, applying a grid shift to the first exposure grid to generate a grid-shifted exposure grid and applying a dither to the grid-shifted exposure grid, and adding the first exposure grid (after receiving dithering) to the grid-shifted exposure grid (after receiving dithering) to generate a second exposure grid.

    Abstract translation: 描述了光刻工艺中数据准备的方法。 该方法包括在图形数据库系统（GDS）网格中提供集成电路（IC）布局设计，将IC布局设计GDS网格转换为第一曝光网格，将非定向抖动技术应用于第一曝光，与应用 将第一曝光栅格抖动到第一曝光栅格，将栅格移位施加到第一曝光栅格以产生栅格移动的曝光栅格并向栅格曝光栅格施加抖动，并将第一曝光栅格（在接收抖动之后）添加到栅格 转换曝光网格（在接收到抖动之后）以产生第二曝光网格。

    Device and method for providing wavelength reduction with a photomask
    82.
    发明授权
    Device and method for providing wavelength reduction with a photomask 有权
    用光掩模提供波长缩小的装置和方法

    公开(公告)号：US08563198B2

    公开(公告)日：2013-10-22

    申请号：US13160231

    申请日：2011-06-14

    Applicant: Burn Jeng Lin ,  Jeng Horng Chen ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Jen-Chieh Shih

    Inventor： Burn Jeng Lin ,  Jeng Horng Chen ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Jen-Chieh Shih

    IPC: G03F1/46 ,  G03F1/48

    CPC classification number: G03F1/50 ,  G03F1/46

    Abstract: Disclosed is a photomask having a wavelength-reducing material that may be used during photolithographic processing. In one example, the photomask includes a transparent substrate, an absorption layer having at least one opening, and a layer of wavelength-reducing material (WRM) placed into the opening. The thickness of the WRM may range from approximately a thickness of the absorption layer to approximately ten times the wavelength of light used during the photolithographic processing. In another example, the photomask includes at least one antireflection coating (ARC) layer.

    Abstract translation: 公开了一种光掩模，其具有在光刻处理期间可以使用的波长减小材料。 在一个示例中，光掩模包括透明基板，具有至少一个开口的吸收层和放置在开口中的波长减小材料层（WRM）。 WRM的厚度可以在大约从吸收层的厚度到在光刻处理期间使用的光的波长的大约十倍的范围内。 在另一示例中，光掩模包括至少一个抗反射涂层（ARC）层。

    Multiple-Grid Exposure Method
    84.
    发明申请
    Multiple-Grid Exposure Method 有权
    多网格曝光方法

    公开(公告)号：US20130203001A1

    公开(公告)日：2013-08-08

    申请号：US13368877

    申请日：2012-02-08

    Applicant: Wen-Chuan Wang ,  Shy-Jay Lin ,  Pei-Yi Liu ,  Jaw-Jung Shin ,  Burn Jeng Lin

    Inventor： Wen-Chuan Wang ,  Shy-Jay Lin ,  Pei-Yi Liu ,  Jaw-Jung Shin ,  Burn Jeng Lin

    IPC: G03F7/20

    CPC classification number: G03F7/2022 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/20 ,  G03F7/704 ,  H01J37/3026 ,  H01J37/3174 ,  Y10S430/143

    Abstract: A method for fabricating a semiconductor device is disclosed. An exemplary method includes receiving an integrated circuit (IC) layout design including a target pattern on a grid. The method further includes receiving a multiple-grid structure. The multiple-grid structure includes a number of exposure grid segments offset one from the other by an offset amount in a first direction. The method further includes performing a multiple-grid exposure to expose the target pattern on a substrate and thereby form a circuit feature pattern on the substrate. Performing the multiple-grid exposure includes scanning the substrate with the multiple-grid structure in a second direction such that a sub-pixel shift of the exposed target pattern occurs in the first direction, and using a delta time (Δt) such that a sub-pixel shift of the exposed target pattern occurs in the second direction.

    Abstract translation: 公开了一种制造半导体器件的方法。 一种示例性方法包括接收包括网格上的目标图案的集成电路（IC）布局设计。 该方法还包括接收多网格结构。 多栅格结构包括多个曝光网格段，其在第一方向上彼此偏移一个偏移量。 该方法还包括执行多栅格曝光以将衬底上的目标图案曝光，从而在衬底上形成电路特征图案。 执行多栅格曝光包括在第二方向上以多栅格结构扫描衬底，使得暴露的目标图案的子像素偏移在第一方向上发生，并且使用增量时间（Deltat）使得子像素 曝光的目标图案的像素位移在第二方向发生。

    DEVICE AND METHOD FOR PROVIDING WAVELENGTH REDUCTION WITH A PHOTOMASK
    86.
    发明申请
    DEVICE AND METHOD FOR PROVIDING WAVELENGTH REDUCTION WITH A PHOTOMASK 有权
    用光源提供波长减小的装置和方法

    公开(公告)号：US20110244378A1

    公开(公告)日：2011-10-06

    申请号：US13160231

    申请日：2011-06-14

    Applicant: Burn Jeng Lin ,  Jeng Horng Chen ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Jen-Chieh Shih

    Inventor： Burn Jeng Lin ,  Jeng Horng Chen ,  Chun-Kuang Chen ,  Tsai-Sheng Gau ,  Ru-Gun Liu ,  Jen-Chieh Shih

    IPC: G03F1/00 ,  G03F7/20

    CPC classification number: G03F1/50 ,  G03F1/46

    Abstract: Disclosed is a photomask having a wavelength-reducing material that may be used during photolithographic processing. In one example, the photomask includes a transparent substrate, an absorption layer having at least one opening, and a layer of wavelength-reducing material (WRM) placed into the opening. The thickness of the WRM may range from approximately a thickness of the absorption layer to approximately ten times the wavelength of light used during the photolithographic processing. In another example, the photomask includes at least one antireflection coating (ARC) layer.

    Abstract translation: 公开了一种光掩模，其具有在光刻处理期间可以使用的波长减小材料。 在一个示例中，光掩模包括透明基板，具有至少一个开口的吸收层和放置在开口中的波长减小材料层（WRM）。 WRM的厚度可以在大约从吸收层的厚度到在光刻处理期间使用的光的波长的大约十倍的范围内。 在另一示例中，光掩模包括至少一个抗反射涂层（ARC）层。

    PHOTORESIST AND PATTERNING PROCESS
    89.
    发明申请
    PHOTORESIST AND PATTERNING PROCESS 有权
    光电和绘图工艺

    公开(公告)号：US20110070542A1

    公开(公告)日：2011-03-24

    申请号：US12562761

    申请日：2009-09-18

    Applicant: Chien-Wei Wang ,  Ching-Yu Chang ,  Burn Jeng Lin

    Inventor： Chien-Wei Wang ,  Ching-Yu Chang ,  Burn Jeng Lin

    IPC: G03F7/20 ,  G03F7/004

    CPC classification number: G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/091 ,  G03F7/11

    Abstract: A method and material layer for forming a pattern are disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photoacid generator and a photobase generator; and exposing one or more portions of the second material layer

    Abstract translation: 公开了用于形成图案的方法和材料层。 该方法包括提供基板; 在所述衬底上形成第一材料层; 在所述第一材料层上形成第二材料层，其中所述第二材料层包括光酸产生剂和光碱产生剂; 以及暴露所述第二材料层的一个或多个部分

    Pellicle stress relief
    90.
    发明授权
    Pellicle stress relief 有权
    防护薄膜应力消除

    公开(公告)号：US07829248B2

    公开(公告)日：2010-11-09

    申请号：US12029275

    申请日：2008-02-11

    Applicant: Burn Jeng Lin ,  Hsin-Chang Lee ,  Ming-Jiun Yao

    Inventor： Burn Jeng Lin ,  Hsin-Chang Lee ,  Ming-Jiun Yao

    IPC: G03F1/00

    CPC classification number: G03F1/64

    Abstract: The present disclosure provides a mask-pellicle system for lithography patterning. The mask-pellicle system includes a mask substrate; a predefined pattern formed on the transparent pattern; a pellicle configured approximate the transparent substrate; a pellicle frame designed to secure the pellicle; and a stress-absorbing feature configured between the pellicle frame and the mask substrate, to reduce stress of the mask substrate.

    Abstract translation: 本公开提供了一种用于光刻图案化的掩模防护薄膜系统。 掩模防护薄膜系统包括掩模基板; 形成在透明图案上的预定图案; 近似透明基板的防护薄膜组件; 设计用于固定防护薄膜的防护薄膜框架; 以及构造在防护薄膜框架和掩模基板之间的应力吸收特征，以减小掩模基板的应力。

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