公开(公告)号：US5864450A

公开(公告)日：1999-01-26

申请号：US99537

申请日：1998-06-18

申请人： Mao-Min Chen ,  Neil Leslie Robertson

发明人： Mao-Min Chen ,  Neil Leslie Robertson

IPC分类号： G11B5/127 ,  G11B5/147 ,  G11B5/31 ,  G11B5/39

CPC分类号： G11B5/3967 ,  G11B5/127 ,  G11B5/147 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/39

摘要： The present invention provides a novel high magnetic moment material for the pole pieces as well as a metal-in-gap configuration for the pole tips of either an inductive magnetic head only or the inductive portion of a MR head. The novel material is Ni.sub.45 Fe.sub.55. In the MIG configuration each pole piece of the inductive head or the inductive head portion of a MR head has a combination of layers, each combination of layers including a first layer of high magnetic moment material Ni.sub.45 Fe.sub.55 adjacent to a transducing gap and a second layer of low magnetic moment material such as Permalloy (Ni.sub.81 Fe.sub.19) further away from the gap. Since both layers are made of NiFe all the desirable properties of this type of material can be employed as well as simplifying its construction with similar plating baths. The saturation of the first layers is 50 to 60 percent higher than the saturation of the second layers. The present invention avoids effects of magnetostriction in spite of the high magnetic moment of the first layers. By appropriately selecting the thickness ratio of the second layer with respect to the first layer the magnetostriction of the laminated structure can be reduced substantially to zero. When this thickness ratio is in the order of five to nine the magnetostriction is reduced to, or slightly below, zero. If the inductive head is employed for write functions only then the second pole tip or both pole tips can be constructed of the high moment Ni.sub.45 Fe.sub.55 material without any thickness ratio or MIG configuration constraints.

摘要翻译： 本发明提供了一种用于极片的新型高磁矩材料以及仅用于感应磁头或MR磁头的感应部分的极尖的金属间隙配置。 新材料是Ni45Fe55。 在MIG配置中，感应头或MR头的感应头部分的每个极片具有层的组合，每层组合包括与换能间隙相邻的第一层高磁矩材料Ni45Fe55和第二层 低磁矩材料如坡莫合金（Ni81Fe19）远离间隙。 由于两层由NiFe制成，所以可以使用这种类型的材料的所有理想特性，并且可以使用类似的电镀浴来简化其构造。 第一层的饱和度比第二层的饱和度高50至60％。 本发明避免了磁致伸缩的影响，尽管第一层的磁矩高。 通过适当地选择第二层相对于第一层的厚度比，层压结构的磁致伸缩可以基本上减小到零。 当该厚度比为5至9的数量级时，磁致伸缩降低到或略低于零。 如果感应头仅用于写入功能，那么第二极尖或两个极尖可以由没有任何厚度比或MIG配置约束的高力矩Ni45Fe55材料构成。

公开(公告)号：US5606478A

公开(公告)日：1997-02-25

申请号：US351996

申请日：1994-12-08

申请人： Mao-Min Chen ,  Neil L. Robertson

发明人： Mao-Min Chen ,  Neil L. Robertson

IPC分类号： G11B5/127 ,  G11B5/147 ,  G11B5/187 ,  G11B5/31 ,  G11B5/39 ,  G11B5/193

CPC分类号： G11B5/3967 ,  G11B5/127 ,  G11B5/147 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/3146 ,  G11B5/3153 ,  G11B5/1878

摘要： The present invention provides a novel high magnetic moment material for the pole pieces as well as a metal-in-gap configuration for the pole tips of either an inductive magnetic head only or the inductive portion of a MR head. The novel material is Ni.sub.45 Fe.sub.55. In the MIG configuration each pole piece of the inductive head or the inductive head portion of a MR head has a combination of layers, each combination of layers including a first layer of high magnetic moment material Ni.sub.45 Fe.sub.55 adjacent to a transducing gap and a second layer of low magnetic moment material such as Permalloy (Ni.sub.81 Fe.sub.19) further away from the gap. Since both layers are made of NiFe all the desirable properties of this type of material can be employed as well as simplifying its construction with similar plating baths. The saturation of the first layers is 50 to 60 percent higher than the saturation of the second layers. The present invention avoids effects of magnetostriction in spite of the high magnetic moment of the first layers. By appropriately selecting the thickness ratio of the second layer with respect to the first layer the magnetostriction of the laminated structure can be reduced substantially to zero. When this thickness ratio is in the order of five to nine the magnetostriction is reduced to, or slightly below, zero. If the inductive head is employed for write functions only then the second pole tip or both pole tips can be constructed of the high moment Ni.sub.45 Fe.sub.55 material without any thickness ratio or MIG configuration constraints.

摘要翻译： 本发明提供了一种用于极片的新型高磁矩材料以及仅用于感应磁头或MR磁头的感应部分的极尖的金属间隙配置。 新材料是Ni45Fe55。 在MIG配置中，感应头或MR头的感应头部分的每个极片都具有层的组合，每层组合包括与换能间隙相邻的第一层高磁矩材料Ni45Fe55和第二层 低磁矩材料如坡莫合金（Ni81Fe19）远离间隙。 由于两层由NiFe制成，所以可以使用这种类型的材料的所有理想特性，并且可以使用类似的电镀浴来简化其构造。 第一层的饱和度比第二层的饱和度高50至60％。 本发明避免了磁致伸缩的影响，尽管第一层的磁矩高。 通过适当地选择第二层相对于第一层的厚度比，层压结构的磁致伸缩可以基本上减小到零。 当该厚度比为5至9的数量级时，磁致伸缩降低到或略低于零。 如果感应头仅用于写入功能，那么第二极尖或两个极尖可以由没有任何厚度比或MIG配置约束的高力矩Ni45Fe55材料构成。

公开(公告)号：US5262914A

公开(公告)日：1993-11-16

申请号：US779221

申请日：1991-10-18

申请人： Mao-Min Chen ,  Ching H. Tsang

发明人： Mao-Min Chen ,  Ching H. Tsang

IPC分类号： G11B5/39 ,  B05D5/12 ,  H01L43/08

CPC分类号： G11B5/399

摘要： A magnetoresistive (MR) read transducer in which a layered structure comprising an MR layer, an antiferromagnetic material in direct contact with the MR layer and a thin layer of interdiffusion material in contact with the layer of antiferromagnetic material is subjected to a heating process to a temperature within a chosen temperature for a chosen time to form a magnetic interface between the antiferromagnetic material the MR layer. The magnetic interface produces a high level of exchange bias with the MR layer.

摘要翻译： 一种磁阻（MR）读取传感器，其中包括MR层，与MR层直接接触的反铁磁材料和与反铁磁材料层接触的相互扩散材料的薄层的分层结构经受加热处理 温度在所选择的温度内选定的时间，以形成反铁磁材料MR层之间的磁界面。 磁性界面与MR层产生高水平的交换偏压。

公开(公告)号：US07217577B2

公开(公告)日：2007-05-15

申请号：US11522663

申请日：2006-09-18

申请人： Cheng T. Horng ,  Mao-Min Chen ,  Liubo Hong ,  Ru-Ying Tong

发明人： Cheng T. Horng ,  Mao-Min Chen ,  Liubo Hong ,  Ru-Ying Tong

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  H01L43/08 ,  Y10S977/934 ,  Y10S977/935

摘要： An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) cell is formed on a conducting lead and magnetic keeper layer that is capped by a sputter-etched Ta layer. The Ta capping layer has a smooth surface as a result of the sputter-etching and that smooth surface promotes the subsequent formation of a lower electrode (pinning/pinned layer) with smooth, flat layers and a radical oxidized (ROX) Al tunneling barrier layer which is ultra-thin, smooth, and to has a high breakdown voltage. A seed layer of NiCr is formed on the sputter-etched capping layer of Ta. The resulting device has generally improved performance characteristics in terms of its switching characteristics, GMR ratio and junction resistance.

摘要翻译： 在由溅射蚀刻的Ta层覆盖的导电引线和磁保持层上形成MTJ（磁性隧道结）MRAM（磁性随机存取存储器）单元。 作为溅射蚀刻的结果，Ta覆盖层具有光滑的表面，并且光滑表面促进随后形成具有光滑的平坦层和自由基氧化（ROX）Al隧穿势垒层的下电极（钉扎/钉扎层） 其超薄，光滑，并具有高击穿电压。 在Ta的溅射蚀刻的覆盖层上形成NiCr种子层。 在其开关特性，GMR比和结电阻方面，所得到的器件通常具有改进的性能特性。

公开(公告)号：US20070008656A1

公开(公告)日：2007-01-11

申请号：US11175932

申请日：2005-07-06

申请人： Yue Liu ,  Daniel Abels ,  Moris Dovek ,  Min Li ,  Pokang Wang ,  Mao-Min Chen

发明人： Yue Liu ,  Daniel Abels ,  Moris Dovek ,  Min Li ,  Pokang Wang ,  Mao-Min Chen

IPC分类号： G11B5/33

CPC分类号： G11B5/3929 ,  B82Y10/00 ,  G11B5/3133 ,  G11B2005/3996

摘要： The problem of increasing the output signal from a CCP-CPP GMR device without having it overheat has been overcome by placing materials that have different thermoelectric potentials on opposing sides of the spacer layer. Heat from the hot junction is removed at the substrate, which acts as a heat sink, resulting in a net local cooling of the confined current spacer layer, enabling it to operate at both higher input voltage increased reliability.

摘要翻译： 通过在间隔层的相对侧放置具有不同热电势的材料来克服增加来自CCP-CPP GMR器件而不使其过热的输出信号的问题。 来自热接点的热量在基板处被去除，其作为散热器，导致限流电流间隔层的局部局部冷却，使其能够在较高的输入电压增加的可靠性下工作。

公开(公告)号：US20060208296A1

公开(公告)日：2006-09-21

申请号：US11080860

申请日：2005-03-15

申请人： Cheng Horng ,  Ru-Ying Tong ,  Mao-Min Chen ,  Liubo Hong ,  Min Li

发明人： Cheng Horng ,  Ru-Ying Tong ,  Mao-Min Chen ,  Liubo Hong ,  Min Li

IPC分类号： H01L29/94

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  H01L43/12

摘要： A high performance MTJ in an MRAM array is disclosed in which the bottom conductor has an amorphous Ta capping layer. A key feature is a surfactant layer comprised of oxygen that is formed on the Ta surface. The resulting smooth and flat Ta capping layer promotes a smooth and flat surface in the MTJ layers which are subsequently formed on the surfactant layer. For a 0.3×0.6 micron MTJ bit size, a 35 to 40 Angstrom thick NiFe(18%) free layer, an AlOx barrier layer generated from a ROX oxidation of an 9 to 10 Angstrom thick Al layer, and a Ru/Ta/Ru capping layer are employed to give a dR/R of >40% and an RA of about 4000 ohm-μm2. The MTJ configuraton is extendable to a 0.2×0.4 micron MTJ bit size.

摘要翻译： 公开了一种MRAM阵列中的高性能MTJ，其中底部导体具有无定形Ta覆盖层。 关键特征是由在Ta表面上形成的氧构成的表面活性剂层。 得到的平滑且平坦的Ta覆盖层促进MTJ层中平滑且平坦的表面，随后在表面活性剂层上形成。 对于0.3×0.6微米的MTJ位尺寸，35至40埃厚的NiFe（18％）自由层，由9至10埃厚的Al层的ROX氧化产生的AlO x势垒层，以及Ru / Ta / 使用Ru覆盖层来产生大于40％的dR / R和约4000欧姆 - 姆2的RA。 MTJ配置可扩展到0.2x0.4微米的MTJ位大小。

公开(公告)号：US06770382B1

公开(公告)日：2004-08-03

申请号：US09443447

申请日：1999-11-22

申请人： Jei-Wei Chang ,  Bernard Dieny ,  Mao-Min Chen ,  Cheng Horng ,  Kochan Ju ,  Simon Liao

发明人： Jei-Wei Chang ,  Bernard Dieny ,  Mao-Min Chen ,  Cheng Horng ,  Kochan Ju ,  Simon Liao

IPC分类号： G11B5127

CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3133 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3272 ,  H01L43/08 ,  Y10T428/1121 ,  Y10T428/1129 ,  Y10T428/1157 ,  Y10T428/1171 ,  Y10T428/12944 ,  Y10T428/2495

摘要： A Spin Valve GMR and Spin Filter SVGMR configuration where in the first embodiment an important buffer layer is composed of an metal oxide having a crystal lattice constant that is close the 1st FM free layer's crystal lattice constant and has the same crystal structure (e.g., FCC, BCC, etc.). The metal oxide buffer layer enhances the specular scattering. The spin valve giant magnetoresistance (SVGMR) sensor comprises: a seed layer over the substrate. An important metal oxide buffer layer (buffer layer) over the seed layer. The metal oxide layer preferably is comprised of NiO or alpha-Fe2O3. A free ferromagnetic layer over the metal oxide layer. A non-magnetic conductor spacer layer over the free ferromagnetic layer. A pinned ferromagnetic layer (2nd FM pinned) over the non-magnetic conductor spacer layer and a pinning material layer over the pinned ferromagnetic layer. In the second embodiment, a high conductivity layer (HCL) is formed over the buffer layer to create a spin filter -SVGMR. The HCL layer enhances the GMR ratio of the spin filter SVGMR. The third embodiment is a pinned FM layer comprised of a three layer structure of an lower AP layer, a spacer layer (e.g., Ru) and an upper AP layer.

摘要翻译： 自旋阀GMR和自旋滤波器SVGMR配置，其中在第一实施例中，重要的缓冲层由具有接近第1个FM自由层的晶格常数的晶格常数的金属氧化物组成并且具有相同的晶体结构 例如FCC，BCC等）。 金属氧化物缓冲层增强了镜面散射。 自旋阀巨磁阻（SVGMR）传感器包括：衬底上的种子层。 种子层上重要的金属氧化物缓冲层（缓冲层）。 金属氧化物层优选由NiO或α-Fe2O3组成。 在金属氧化物层上的自由铁磁层。 在自由铁磁层上的非磁性导体间隔层。 在非磁性导体间隔层上方的钉扎铁磁层（第二个FM被钉住）和钉扎铁磁层上的钉扎材料层。 在第二实施例中，在缓冲层上形成高电导率层（HCL）以产生自旋滤波器-SVGMR。 HCL层增强了旋转过滤器SVGMR的GMR比。 第三实施例是由下AP层，间隔层（例如Ru）和上AP层组成的三层结构的钉扎FM层。

公开(公告)号：US06706421B1

公开(公告)日：2004-03-16

申请号：US09483937

申请日：2000-01-18

申请人： Cheng T. Horng ,  Mao-Min Chen ,  Ru-Ying Tong

发明人： Cheng T. Horng ,  Mao-Min Chen ,  Ru-Ying Tong

IPC分类号： B32B1501

CPC分类号： B32B15/018 ,  C23C14/025 ,  C23C14/14 ,  C23C28/023 ,  G11B5/3906 ,  G11B5/3929 ,  Y10T428/12875 ,  Y10T428/12944

摘要： A lead structure for use with a magneto-resistive sensing element in a magnetic disk system is described. The lead structure comprises a layer of ruthenium or rhodium sandwiched between layers of a nickel-chromium alloy. The lower nickel-chromium layer acts as a seed layer to ensure that the ruthenium and rhodium layers have crystal structures that correspond to low resistivity phases. The interfaces between these three layers introduce a minimum of interfacial scattering of the conduction electrons thereby keeping dimensional increases in resistivity to a minimum.

摘要翻译： 描述了与磁盘系统中的磁阻感测元件一起使用的引线结构。 引线结构包括夹在镍 - 铬合金层之间的钌或铑层。 较低的镍 - 铬层用作种子层，以确保钌和铑层具有对应于低电阻率相的晶体结构。 这三层之间的界面引入了导电电子的最小的界面散射，从而将电阻率的尺寸增加保持在最小。

公开(公告)号：US06430015B2

公开(公告)日：2002-08-06

申请号：US09773743

申请日：2001-02-02

申请人： Kochan Ju ,  Mao-Min Chen ,  Cheng T. Horng ,  Jei-Wei Chang

发明人： Kochan Ju ,  Mao-Min Chen ,  Cheng T. Horng ,  Jei-Wei Chang

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3948 ,  G11B2005/3996

摘要： A longitudinally magnetically biased dual stripe magnetoresistive (DSMR) sensor element comprises a first patterned magnetoresistive (MR) layer. There are contacts at the opposite ends of the patterned magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer, each of the stacks including a first Anti-Ferro-Magnetic (AFM) layer and a first lead layer. With the first MR layer in place the device was annealed in the presence of a longitudinal external magnetic field. A second patterned magnetoresistive (MR) layer was formed above the previous structure. There are contacts at the opposite ends of the second patterned magnetoresistive (MR) layer with a second pair of stacks defining a second track width of the second patterned magnetoresistive (MR) layer. Each of the second pair of stacks includes spacer layer is composed of a metal, a Ferro-Magnetic (FM) layer, a second Anti-Ferro-Magnetic (AFM) layer and a second lead layer. With the second MR layer in place, the device was annealed in the presence of a second longitudinal external magnetic field.

摘要翻译： 纵向磁偏置双条磁阻（DSMR）传感器元件包括第一图案化磁阻（MR）层。 在图案化磁阻（MR）层的相对端处存在触点，第一对叠层限定第一磁阻（MR）层的轨道宽度，第一对堆叠限定第一磁阻（MR）的磁道宽度， 层，每个堆叠包括第一抗铁磁（AFM）层和第一引线层。 在第一MR层就位的情况下，器件在存在纵向外部磁场的情况下退火。 在先前结构之上形成第二图案化磁阻（MR）层。 在第二图案化磁阻（MR）层的相对端具有限定第二图案化磁阻（MR）层的第二磁道宽度的第二对叠层的触点。 第二对堆叠中的每一个包括间隔层由金属，铁磁（FM）层，第二抗铁磁（AFM）层和第二引线层组成。 在第二MR层就位的情况下，器件在第二纵向外部磁场的存在下退火。

公开(公告)号：US5812350A

公开(公告)日：1998-09-22

申请号：US729081

申请日：1996-10-09

申请人： Mao-Min Chen ,  Neil Leslie Robertson

发明人： Mao-Min Chen ,  Neil Leslie Robertson

IPC分类号： G11B5/127 ,  G11B5/147 ,  G11B5/187 ,  G11B5/31 ,  G11B5/39

CPC分类号： G11B5/3967 ,  G11B5/127 ,  G11B5/147 ,  G11B5/3109 ,  G11B5/3113 ,  G11B5/3146 ,  G11B5/3153 ,  G11B5/1878

摘要： The present invention provides a novel high magnetic moment material for the pole pieces as well as a metal-in-gap configuration for the pole tips of either an inductive magnetic head only or the inductive portion of a MR head. The novel material is Ni.sub.45 Fe.sub.55. In the MIG configuration each pole piece of the inductive head or the inductive head portion of a MR head has a combination of layers, each combination of layers including a first layer of high magnetic moment material Ni.sub.45 Fe.sub.55 adjacent to a transducing gap and a second layer of low magnetic moment material such as Permalloy (Ni.sub.81 Fe.sub.19) further away from the gap. Since both layers are made of NiFe all the desirable properties of this type of material can be employed as well as simplifying its construction with similar plating baths. The saturation of the first layers is 50 to 60 percent higher than the saturation of the second layers. The present invention avoids effects of magnetostriction in spite of the high magnetic moment of the first layers. By appropriately selecting the thickness ratio of the second layer with respect to the first layer the magnetostriction of the laminated structure can be reduced substantially to zero. When this thickness ratio is in the order of five to nine the magnetostriction is reduced to, or slightly below, zero. If the inductive head is employed for write functions only then the second pole tip or both pole tips can be constructed of the high moment Ni.sub.45 Fe.sub.55 material without any thickness ratio or MIG configuration constraints.

摘要翻译： 本发明提供了一种用于极片的新型高磁矩材料以及仅用于感应磁头或MR磁头的感应部分的极尖的金属间隙配置。 新材料是Ni45Fe55。 在MIG配置中，感应头或MR头的感应头部分的每个极片具有层的组合，每层组合包括与换能间隙相邻的第一层高磁矩材料Ni45Fe55和第二层 低磁矩材料如坡莫合金（Ni81Fe19）远离间隙。 由于两层由NiFe制成，所以可以使用这种类型的材料的所有理想特性，并且可以使用类似的电镀浴来简化其构造。 第一层的饱和度比第二层的饱和度高50至60％。 本发明避免了磁致伸缩的影响，尽管第一层的磁矩高。 通过适当地选择第二层相对于第一层的厚度比，层压结构的磁致伸缩可以基本上减小到零。 当该厚度比为5至9的数量级时，磁致伸缩降低到或略低于零。 如果感应头仅用于写入功能，那么第二极尖或两个极尖可以由没有任何厚度比或MIG配置约束的高力矩Ni45Fe55材料构成。