摘要:
A radiation image pickup device includes: an image pickup section having a plurality of pixels and generating an electric signal according to incident radiation, the plurality of pixels each including a photoelectric conversion element and one or a plurality of transistors of a predetermined amplifier circuit; and a correction section subjecting signal data of the electric signal obtained in the image pickup section to predetermined correction process. The correction section makes a comparison between measurement data obtained by measuring an input-output characteristic of the amplifier circuit in each of the plurality of pixels and initial data on the input-output characteristic, and performs the correction process by the pixel individually, by using a result of the comparison.
摘要:
A connector is provided with a pair of female and male housings (10, 40) connectable with each other. The female housing (10) includes a block-shaped housing main body (11) and the male housing (40) includes a receptacle (42) having an inner surface shape conforming to outer surfaces of the housing main body (11). Corners on the outer surface of the housing main body diagonal to each other are bevels (14, 15) with different shapes. The bevels (14, 15) include moderately inclined portions (14) located at the opposite ends of the upper surface of the housing main body (11) and inclined at a relatively large angle with respect to a height direction and steeply inclined portions (15) located at the opposite ends of the lower surface of the housing main body (11) and inclined at a relatively small angle with respect to the height direction.
摘要:
An ion implanting apparatus is provided, which can accurately measure a quantity of atoms that are implanted. The ion implanting apparatus according to the present invention has an object to be measured, and the object to be measured is arranged in an irradiating range in which ions are irradiated. When atoms are implanted into an object to be processed by irradiating ions of a processing gas and neutralized particles thereof, the object to be measured is heated through the irradiation with the processing gas ions and the neutralized particles. A control unit determines a quantity of the atoms that are implanted into the object to be processed from the temperature of the object to be measured.
摘要:
A plurality of RF power signals have the same RF frequency as a reference RF signal and are coupled to respective RF connection points on an electrode of a plasma chamber. At least three of the RF connection points are not collinear. At least two of the RF power signals have time-varying phase offsets relative to the reference RF signal that are distinct functions of time. Such time-varying phase offsets can produce a spatial distribution of plasma in the plasma chamber having better time-averaged uniformity than the uniformity of the spatial distribution at any instant in time.
摘要:
A male connector (10) is provided with a housing main body (20) formed with a plurality of cavities (21) penetrating in forward and backward directions, into which terminal fittings are insertable, a surrounding wall portion (36) arranged at a rear part of the housing main body (20) and open backward, and a plurality of seal tower portions (35) arranged inside the surrounding wall portion (36) at the rear part of the housing main body (20) and surrounding the cavities (21). Outer ribs (41) extend between the inner surfaces of the surrounding wall portion (36) and the outer surfaces of the seal tower portions (35). The outer ribs 41 are thick at connected parts with the surrounding wall portion (36) while being thin at connected parts with the seal tower portions (35).
摘要:
An optical element package includes: an optical element in a form of a chip, and a lens resin having a convex lens surface covering an optical functional surface of the optical element. The convex lens surface is formed as a rough surface having a plurality of minute convex curved surfaces having a vertex in a direction perpendicular to a plane in contact with each part of the convex lens surface.
摘要:
A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid.
摘要:
In the case of forming switching elements and light sensor elements over the same substrate, an increase in the film thickness of active layers in an attempt to enhance the sensitivity of the light sensor elements would adversely affect the characteristics of the switching elements (TFTs). In a configuration of a display in which a channel layer 25 for constituting thin film transistors to form the switching elements for pixels and a photoelectric conversion layer 35 for constituting the light sensor elements are provided over a gate insulating film 24 on a glass substrate 5 to be provided with a plurality of pixels arranged in a matrix pattern, the photoelectric conversion layer 35 is formed to be thicker than the channel layer 25, and/or the photoelectric conversion layer 35 is formed of a material different from the material for the channel layer 25, whereby the light absorption coefficient of the photoelectric conversion layer 35 is made to be higher than that of the channel layer 25.
摘要:
Chromaticity difference is decreased, which is caused by the difference of transmissivity when a light passes through a transparent conductive film to constitute pixels. Optical film thickness of each of transparent conductive films PXR, PXG, and PXB to constitute pixels (a product “nd” of refractive index “n” and film thickness “d”) is varied for each of color filters RF, GF, and BF for each pixel. The transparent conductive film is prepared by coating an ink (produced by dispersing fine particles of a transparent conductive film material such as ITO in a binder) via nozzle of an ink jet device, and then, by baking. Film thickness is controlled by the coating amount of the ink, and refractive index is controlled by volume ratio of the fine particles of conductive material to the binder contained in the transparent conductive film in consideration of those refractive indices.