利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

34 条记录 (耗时 0.029 秒)

    Phase-Modulated RF Power for Plasma Chamber Electrode
    1.
    发明申请
    Phase-Modulated RF Power for Plasma Chamber Electrode 审中-公开
    等离子室电极的相位调制RF功率

    公开(公告)号：US20110192349A1

    公开(公告)日：2011-08-11

    申请号：US13005526

    申请日：2011-01-12

    申请人： Edward P. Hammond, IV ,  Tsutomu Tanaka ,  Christopher Boitnott ,  Jozef Kudela

    发明人： Edward P. Hammond, IV ,  Tsutomu Tanaka ,  Christopher Boitnott ,  Jozef Kudela

    IPC分类号： C23C16/509

    CPC分类号： H05H1/46 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32091

    摘要： A plurality of RF power signals have the same RF frequency as a reference RF signal and are coupled to respective RF connection points on an electrode of a plasma chamber. At least three of the RF connection points are not collinear. At least two of the RF power signals have time-varying phase offsets relative to the reference RF signal that are distinct functions of time. Such time-varying phase offsets can produce a spatial distribution of plasma in the plasma chamber having better time-averaged uniformity than the uniformity of the spatial distribution at any instant in time.

    摘要翻译： 多个RF功率信号具有与参考RF信号相同的RF频率，并且耦合到等离子体室的电极上的相应RF连接点。 至少三个RF连接点不共线。 RF功率信号中的至少两个具有相对于参考RF信号的时变相位偏移，该参考RF信号是时间的不同功能。 这种时变相位偏移可以在等离子体室中产生等离子体的空间分布，其具有比在任何时刻的空间分布的均匀性更好的时间均匀度。

    Guided wave applicator with non-gaseous dielectric for plasma chamber
    4.
    发明授权
    Guided wave applicator with non-gaseous dielectric for plasma chamber 有权
    带等离子体室的非气体介质的导波器

    公开(公告)号：US09397380B2

    公开(公告)日：2016-07-19

    申请号：US13360652

    申请日：2012-01-27

    申请人： Jozef Kudela ,  Tsutomu Tanaka ,  Carl A. Sorensen ,  Suhail Anwar ,  John M. White

    发明人： Jozef Kudela ,  Tsutomu Tanaka ,  Carl A. Sorensen ,  Suhail Anwar ,  John M. White

    IPC分类号： H01P3/16 ,  H01L21/02 ,  H05H1/46 ,  H01J37/32

    CPC分类号： H01P3/16 ,  H01J37/32229 ,  H01L21/02 ,  H01L21/02104 ,  H05H1/46 ,  H05H2001/4622

    摘要： A guided wave applicator comprising two electrically conductive waveguide walls and a waveguide dielectric. The volume of the waveguide dielectric is composed of non-gaseous dielectric material and is positioned between the two waveguide walls. The waveguide dielectric includes first and second longitudinal ends and includes first, second, third and fourth sides extending longitudinally between the two longitudinal ends. The first waveguide wall is positioned so that it covers the first side of the waveguide dielectric, and the second waveguide wall is positioned so that it covers the second side of the waveguide dielectric. In operation, electrical power can be supplied to one or both longitudinal ends of the waveguide dielectric, whereby the power can be coupled to a plasma through the exposed sides of the waveguide dielectric.

    摘要翻译： 导波装置，其包括两个导电波导壁和波导电介质。 波导介质的体积由非气体电介质材料构成，并且位于两个波导壁之间。 波导电介质包括第一和第二纵向端部，并且包括在两个纵向端部之间纵向延伸的第一，第二，第三和第四侧面。 第一波导壁被定位成使得其覆盖波导电介质的第一侧，并且第二波导壁被定位成使得其覆盖波导电介质的第二侧。 在操作中，可以向波导介质的一个或两个纵向端提供电力，由此可以通过波导电介质的暴露侧将功率耦合到等离子体。

    Guided Wave Applicator with Non-Gaseous Dielectric for Plasma Chamber
    5.
    发明申请
    Guided Wave Applicator with Non-Gaseous Dielectric for Plasma Chamber 有权
    用于等离子室的非气体介质的导波涂敷器

    公开(公告)号：US20130126331A1

    公开(公告)日：2013-05-23

    申请号：US13360652

    申请日：2012-01-27

    申请人： Jozef Kudela ,  Tsutomu Tanaka ,  Carl A. Sorensen ,  Suhail Anwar ,  John M. White

    发明人： Jozef Kudela ,  Tsutomu Tanaka ,  Carl A. Sorensen ,  Suhail Anwar ,  John M. White

    IPC分类号： H01P3/16 ,  H05H1/46 ,  H01L21/02

    CPC分类号： H01P3/16 ,  H01J37/32229 ,  H01L21/02 ,  H01L21/02104 ,  H05H1/46 ,  H05H2001/4622

    摘要： A guided wave applicator comprising two electrically conductive waveguide walls and a waveguide dielectric. The volume of the waveguide dielectric is composed of non-gaseous dielectric material and is positioned between the two waveguide walls. The waveguide dielectric includes first and second longitudinal ends and includes first, second, third and fourth sides extending longitudinally between the two longitudinal ends. The first waveguide wall is positioned so that it covers the first side of the waveguide dielectric, and the second waveguide wall is positioned so that it covers the second side of the waveguide dielectric. In operation, electrical power can be supplied to one or both longitudinal ends of the waveguide dielectric, whereby the power can be coupled to a plasma through the exposed sides of the waveguide dielectric.

    摘要翻译： 导波装置，其包括两个导电波导壁和波导电介质。 波导介质的体积由非气体电介质材料构成，并且位于两个波导壁之间。 波导电介质包括第一和第二纵向端部，并且包括在两个纵向端部之间纵向延伸的第一，第二，第三和第四侧面。 第一波导壁被定位成使得其覆盖波导电介质的第一侧，并且第二波导壁被定位成使得其覆盖波导电介质的第二侧。 在操作中，可以向波导介质的一个或两个纵向端提供电力，由此可以通过波导电介质的暴露侧将功率耦合到等离子体。

    Plasma source with vertical gradient
    6.
    发明授权
    Plasma source with vertical gradient 有权
    等离子源与垂直梯度

    公开(公告)号：US08872428B2

    公开(公告)日：2014-10-28

    申请号：US13405297

    申请日：2012-02-25

    申请人： Jozef Kudela ,  Tsutomu Tanaka ,  Suhail Anwar ,  Carl A. Sorensen ,  John M. White

    发明人： Jozef Kudela ,  Tsutomu Tanaka ,  Suhail Anwar ,  Carl A. Sorensen ,  John M. White

    IPC分类号： H05H1/24 ,  H05H1/46 ,  C23C14/02 ,  C23C14/34 ,  C23C14/58

    CPC分类号： H05H1/46 ,  C23C14/028 ,  C23C14/34 ,  C23C14/58 ,  H05H2001/4682

    摘要： A plasma source includes upper and lower portions. In a first aspect, an electrical power source supplies greater power to the upper portion than to the lower portion. In a second aspect, the plasma source includes three or more power couplers that are spaced apart vertically, wherein the number of plasma power couplers in the upper portion is greater than the number of plasma power couplers in the lower portion. The upper and lower portions of the plasma source can be defined as respectively above and below a horizontal geometric plane that bisects the vertical height of the plasma source. Alternatively, the upper and lower portions can be defined as respectively above and below a horizontal geometric plane that bisects the combined area of first and second workpiece positions.

    摘要翻译： 等离子体源包括上部和下部。 在第一方面，电源向上部提供比下部更大的功率。 在第二方面，等离子体源包括三个或更多个垂直间隔开的功率耦合器，其中上部中的等离子体功率耦合器的数量大于下部中的等离子体功率耦合器的数量。 等离子体源的上部和下部可以分别在等分于等离子体源的垂直高度的水平几何平面之上和之下。 或者，上部和下部可以分别在平分第一和第二工件位置的组合区域的水平几何平面的上方和下方。

    Plasma Source with Vertical Gradient
    8.
    发明申请
    Plasma Source with Vertical Gradient 有权
    等离子源与垂直梯度

    公开(公告)号：US20120217874A1

    公开(公告)日：2012-08-30

    申请号：US13405297

    申请日：2012-02-25

    申请人： Jozef Kudela ,  Tsutomu Tanaka ,  Suhail Anwar ,  Carl A. Sorensen ,  John M. White

    发明人： Jozef Kudela ,  Tsutomu Tanaka ,  Suhail Anwar ,  Carl A. Sorensen ,  John M. White

    IPC分类号： H05H1/24 ,  H01L21/3065 ,  C23C16/50

    CPC分类号： H05H1/46 ,  C23C14/028 ,  C23C14/34 ,  C23C14/58 ,  H05H2001/4682

    摘要： A plasma source includes upper and lower portions. In a first aspect, an electrical power source supplies greater power to the upper portion than to the lower portion. In a second aspect, the plasma source includes three or more power couplers that are spaced apart vertically, wherein the number of plasma power couplers in the upper portion is greater than the number of plasma power couplers in the lower portion. The upper and lower portions of the plasma source can be defined as respectively above and below a horizontal geometric plane that bisects the vertical height of the plasma source. Alternatively, the upper and lower portions can be defined as respectively above and below a horizontal geometric plane that bisects the combined area of first and second workpiece positions.

    摘要翻译： 等离子体源包括上部和下部。 在第一方面，电源向上部提供比下部更大的功率。 在第二方面，等离子体源包括三个或更多个垂直间隔开的功率耦合器，其中上部中的等离子体功率耦合器的数量大于下部中的等离子体功率耦合器的数量。 等离子体源的上部和下部可以分别在等分于等离子体源的垂直高度的水平几何平面之上和之下。 或者，上部和下部可以分别在平分第一和第二工件位置的组合区域的水平几何平面的上方和下方。

    Large area plasma processing chamber with at-electrode RF matching
    9.
    发明授权
    Large area plasma processing chamber with at-electrode RF matching 有权
    大面积等离子体处理室，具有电极RF匹配

    公开(公告)号：US08691047B2

    公开(公告)日：2014-04-08

    申请号：US12948164

    申请日：2010-11-17

    申请人： Carl A. Sorensen ,  John M. White ,  Jozef Kudela

    发明人： Carl A. Sorensen ,  John M. White ,  Jozef Kudela

    IPC分类号： C23C16/505 ,  H01L21/3065

    CPC分类号： H01J37/32577 ,  H01J37/32091 ,  H01J37/32183

    摘要： A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode.

    摘要翻译： 提供具有电极射频匹配的等离子体处理系统以及利用该等离子体处理基板的方法。 在一个实施例中，等离子体处理系统包括室主体，衬底支撑件，电极，盖组件和RF调谐元件。 基板支撑件设置在室主体中限定的处理空间中。 电极位于衬底支撑件的上方并位于盖子组件的盖子的下面。 RF调谐元件设置在盖和电极之间并且耦合到电极。