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公开(公告)号：US20110192349A1
公开(公告)日：2011-08-11
申请号：US13005526
申请日：2011-01-12
IPC分类号： C23C16/509
CPC分类号： H05H1/46 , C23C16/509 , H01J37/32082 , H01J37/32091
摘要： A plurality of RF power signals have the same RF frequency as a reference RF signal and are coupled to respective RF connection points on an electrode of a plasma chamber. At least three of the RF connection points are not collinear. At least two of the RF power signals have time-varying phase offsets relative to the reference RF signal that are distinct functions of time. Such time-varying phase offsets can produce a spatial distribution of plasma in the plasma chamber having better time-averaged uniformity than the uniformity of the spatial distribution at any instant in time.
摘要翻译： 多个RF功率信号具有与参考RF信号相同的RF频率，并且耦合到等离子体室的电极上的相应RF连接点。 至少三个RF连接点不共线。 RF功率信号中的至少两个具有相对于参考RF信号的时变相位偏移，该参考RF信号是时间的不同功能。 这种时变相位偏移可以在等离子体室中产生等离子体的空间分布，其具有比在任何时刻的空间分布的均匀性更好的时间均匀度。
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公开(公告)号：US09850576B2
公开(公告)日：2017-12-26
申请号：US12982843
申请日：2010-12-30
IPC分类号： C23C16/00 , C23C16/50 , C23F1/00 , H01L21/306 , C23C16/455 , H01J37/32 , C23C16/509
CPC分类号： C23C16/45565 , C23C16/509 , H01J37/32082 , H01J37/32431 , H01J37/3244
摘要： Embodiments of the present invention generally relate to apparatus for reducing arcing and parasitic plasma in substrate processing chambers. The apparatus generally include a processing chamber having a substrate support, a backing plate, and a showerhead disposed therein. A showerhead suspension electrically couples the backing plate to the showerhead. An electrically conductive bracket is coupled to the backing plate and spaced apart from the showerhead. The electrically conductive bracket may include a plate, a lower portion, an upper portion, and a vertical extension. The electrically conductive bracket contacts an electrical isolator.
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公开(公告)号：US20110197814A1
公开(公告)日：2011-08-18
申请号：US12982843
申请日：2010-12-30
IPC分类号： C23C4/00
CPC分类号： C23C16/45565 , C23C16/509 , H01J37/32082 , H01J37/32431 , H01J37/3244
摘要： Embodiments of the present invention generally relate to apparatus for reducing arcing and parasitic plasma in substrate processing chambers. The apparatus generally include a processing chamber having a substrate support, a backing plate, and a showerhead disposed therein. A showerhead suspension electrically couples the backing plate to the showerhead. An electrically conductive bracket is coupled to the backing plate and spaced apart from the showerhead. The electrically conductive bracket may include a plate, a lower portion, an upper portion, and a vertical extension. The electrically conductive bracket contacts an electrical isolator.
摘要翻译： 本发明的实施例一般涉及用于减少衬底处理室中的电弧和寄生等离子体的装置。 该设备通常包括处理室，其具有设置在其中的基板支撑件，背板和喷头。 喷头悬挂将背板电连接到喷头。 导电支架联接到背板并与喷头间隔开。 导电支架可以包括板，下部，上部和垂直延伸部。 导电支架接触电隔离器。
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4.发明申请Gate profile control through effective frequency of dual HF/VHF sources in a plasma etch process 失效通过在等离子体蚀刻工艺中双重HF / VHF源的有效频率进行栅极分布控制公开(公告)号：US20090142930A1
公开(公告)日：2009-06-04
申请号：US11998829
申请日：2007-11-30
申请人： Edward P. Hammond, IV , Rodolfo P. Belen , Alexander M. Paterson , Brian K. Hatcher , Valentin N. Todorow , Dan Katz
发明人： Edward P. Hammond, IV , Rodolfo P. Belen , Alexander M. Paterson , Brian K. Hatcher , Valentin N. Todorow , Dan Katz
IPC分类号： H01L21/3065
CPC分类号： H01L21/32137 , H01J37/32091 , H01J37/321 , H01J37/32165 , H01L21/28035
摘要： A method of processing a wafer in a plasma, in which target values of two different plasma process parameters are simultaneously realized under predetermined process conditions by setting respective power levels of VHF and HF power simultaneously coupled to the wafer to respective optimum levels.
摘要翻译： 一种在等离子体中处理晶片的方法，其中通过将同时耦合到晶片的VHF和HF功率的相应功率电平设置为相应的最佳电平，在预定的工艺条件下同时实现两个不同等离子体工艺参数的目标值。
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5.发明授权Plasma reactor apparatus with independent capacitive and toroidal plasma sources 失效具有独立电容和环形等离子体源的等离子体反应器装置公开(公告)号：US07264688B1
公开(公告)日：2007-09-04
申请号：US11411163
申请日：2006-04-24
申请人： Alexander Paterson , Valentin N. Todorow , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond, IV , John P. Holland , Alexander Matyushkin
发明人： Alexander Paterson , Valentin N. Todorow , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond, IV , John P. Holland , Alexander Matyushkin
CPC分类号： H01J37/32935 , H01J37/321
摘要： A plasma reactor includes a toroidal plasma source having an RF power applicator, and RF generator being coupled to the RF power applicator. The reactor further includes a capacitively coupled plasma source power applicator or electrode at the ceiling or the workpiece support, a VHF power generator being coupled to the capacitively coupled source power applicator, a plasma bias power applicator or electrode in the workpiece support and an RF bias power generator coupled to the plasma bias power applicator. A controller adjusts the relative amounts of power simultaneously coupled to plasma in the chamber and conduit by the toroidal plasma source and by the capacitively coupled plasma source power applicator.
摘要翻译： 等离子体反应器包括具有RF功率施加器的环形等离子体源，RF发生器耦合到RF功率施加器。 反应器还包括在天花板或工件支撑件处的电容耦合的等离子体源功率施加器或电极，耦合到电容耦合的源功率施加器的VHF发电机，工件支架中的等离子体偏置功率施加器或电极，以及RF偏置 发电机耦合到等离子体偏置功率施加器。 控制器调节通过环形等离子体源和电容耦合的等离子体源功率施加器同时耦合到腔室和管道中的等离子体的功率的相对量。
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公开(公告)号：US20130171757A1
公开(公告)日：2013-07-04
申请号：US13732662
申请日：2013-01-02
申请人： HARI K. PONNEKANTI , Alexander S. Polyak , James L'Heureux , Michael S. Cox , Christopher T. Lane , Edward P. Hammond, IV , Hemant P. Mungekar , Susanne Schlaefer , Wolfgang Buschbeck , Juergen Henrich , Andreas Lopp
发明人： HARI K. PONNEKANTI , Alexander S. Polyak , James L'Heureux , Michael S. Cox , Christopher T. Lane , Edward P. Hammond, IV , Hemant P. Mungekar , Susanne Schlaefer , Wolfgang Buschbeck , Juergen Henrich , Andreas Lopp
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , C23C14/568 , C23C16/54 , H01L21/67115 , H01L21/67173 , H01L21/6776
摘要： The present invention generally provides a high throughput substrate processing system that is used to form one or more regions of a solar cell device. In one configuration of a processing system, one or more solar cell passivating or dielectric layers are deposited and further processed within one or more processing chambers contained within the high throughput substrate processing system. The processing chambers may be, for example, plasma enhanced chemical vapor deposition (PECVD) chambers, low pressure chemical vapor deposition (LPCVD) chambers, atomic layer deposition (ALD) chambers, physical vapor deposition (PVD) or sputtering chambers, thermal processing chambers (e.g., RTA or RTO chambers), substrate reorientation chambers (e.g., flipping chambers) and/or other similar processing chambers.
摘要翻译： 本发明通常提供用于形成太阳能电池器件的一个或多个区域的高通量衬底处理系统。 在处理系统的一种配置中，一个或多个太阳能电池钝化或电介质层被沉积并在包含在高通量衬底处理系统内的一个或多个处理室内进一步处理。 处理室可以是例如等离子体增强化学气相沉积（PECVD）室，低压化学气相沉积（LPCVD）室，原子层沉积（ALD）室，物理气相沉积（PVD）或溅射室，热处理室 （例如，RTA或RTO室），基板重新定向室（例如，翻转室）和/或其它类似的处理室。
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7.发明授权Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density 有权使用可变频电容耦合源的双等离子体源处理来控制等离子体离子密度公开(公告)号：US07727413B2
公开(公告)日：2010-06-01
申请号：US11410717
申请日：2006-04-24
申请人： Alexander Paterson , Valentin N. Todorow , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond, IV , John P. Holland , Alexander Matyushkin
发明人： Alexander Paterson , Valentin N. Todorow , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond, IV , John P. Holland , Alexander Matyushkin
IPC分类号： G01L21/30
CPC分类号： H01J37/321 , H01J37/32091 , H01J37/32165
摘要： A method of processing a workpiece in the chamber of a plasma reactor includes introducing a process gas into the chamber, simultaneously (a) capacitively coupling VHF plasma source power into a process region of the chamber that overlies the wafer, and (b) inductively coupling RF plasma source power into the process region, and controlling plasma ion density by controlling the effective frequency of the VHF source power. In a preferred embodiment, the step of coupling VHF source power is performed by coupling VHF source power from different generators having different VHF frequencies, and the step of controlling the effective frequency is performed by controlling the ratio of power coupled by the different generators.
摘要翻译： 在等离子体反应器的腔室中处理工件的方法包括将工艺气体引入到腔室中，同时（a）将VHF等离子体源功率电容耦合到覆盖在晶片上的腔室的工艺区域中，以及（b）电感耦合 RF等离子体源功率进入工艺区域，并通过控制VHF源功率的有效频率来控制等离子体离子密度。 在优选实施例中，通过耦合具有不同VHF频率的不同发生器的VHF源功率来执行耦合VHF源功率的步骤，并且通过控制由不同发生器耦合的功率比来执行控制有效频率的步骤。
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公开(公告)号：US20090218317A1
公开(公告)日：2009-09-03
申请号：US12039350
申请日：2008-02-28
申请人： RODOLFO P. BELEN , Edward P. Hammond, IV , Brian K. Hatcher , Dan Katz , Alexander M. Paterson , Valentin N. Todorow
发明人： RODOLFO P. BELEN , Edward P. Hammond, IV , Brian K. Hatcher , Dan Katz , Alexander M. Paterson , Valentin N. Todorow
CPC分类号： C23C16/45565 , C23C16/45574 , H01J37/3244 , H01J37/32449
摘要： Embodiments of the present invention provide apparatus and method for processing a substrate with increased uniformity. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus comprises a chamber body defining a processing volume, a substrate support disposed in the processing volume, a showerhead disposed in the processing volume opposite to the substrate support, and a plasma generation assembly configured to ignite a plasma from the processing gases in the processing gas in the processing volume. The showerhead is configured to provide one or more processing gases to the processing volume. The showerhead has two or more distribution zones each independently controllable.
摘要翻译： 本发明的实施例提供了用于以均匀性增加来处理衬底的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置。 该装置包括限定处理体积的室主体，设置在处理容积中的基板支撑件，设置在与基板支撑件相对的处理体积中的喷头，以及等离子体产生组件，其被配置为在处理中点燃来自处理气体的等离子体 气体处理量。 喷头构造成为处理量提供一种或多种处理气体。 喷头具有两个或更多个分配区，每个分配区可独立控制。
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公开(公告)号：US08871064B2
公开(公告)日：2014-10-28
申请号：US12695643
申请日：2010-01-28
申请人： Tza-Jing Gung , Xinyu Fu , Arvind Sundarrajan , Edward P. Hammond, IV , Praburam Gopalraja , John C. Forster , Mark A. Perrin , Andrew S. Gillard
发明人： Tza-Jing Gung , Xinyu Fu , Arvind Sundarrajan , Edward P. Hammond, IV , Praburam Gopalraja , John C. Forster , Mark A. Perrin , Andrew S. Gillard
IPC分类号： C23C14/34 , H01J37/32 , C23C14/35 , C23C14/04 , H01L21/768 , H01J37/34 , C23C14/16 , H01L21/285 , C23F4/00 , C23C14/06
CPC分类号： H01J37/3266 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/358 , C23F4/00 , H01J37/321 , H01J37/32623 , H01J37/32688 , H01J37/3408 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76865
摘要： A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias.
摘要翻译： 在等离子体溅射室中执行的包括从靶的溅射沉积和对衬底的氩溅射蚀刻的多步骤过程。 该腔室包括一个四重电磁线圈阵列，该四极电磁线圈阵列围绕室内RF射频线圈背面的等离子体溅射反应器的侧壁外的腔室轴线同轴地布置。 可以单独控制线圈电流以产生不同的磁场分布，例如在其中溅射靶被驱动以将靶材料溅射到晶片上的溅射沉积模式和其中RF线圈支撑氩溅射的溅射蚀刻模式之间 等离子体。 首先以高目标功率和晶片偏置溅射沉积TaN / Ta势垒。 以更高的晶片偏压进行氩蚀刻。 应用闪光步骤，降低目标功率和晶片偏置。
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公开(公告)号：US20130273262A1
公开(公告)日：2013-10-17
申请号：US13447035
申请日：2012-04-13
申请人： Manoj Vellaikal , Michael S. Cox , Hemant P. Mungekar , Chikuang C. Wang , Lin Zhang , Hari K. Ponnekanti , Michael P. Stewart , Edward P. Hammond, IV , Alexander S. Polyak
发明人： Manoj Vellaikal , Michael S. Cox , Hemant P. Mungekar , Chikuang C. Wang , Lin Zhang , Hari K. Ponnekanti , Michael P. Stewart , Edward P. Hammond, IV , Alexander S. Polyak
IPC分类号： C23C16/50
CPC分类号： C23C16/45565 , C23C16/45589 , C23C16/50 , C23C16/54
摘要： Methods and apparatus for controlling film deposition using a linear plasma source are described herein. The apparatus include a showerhead having openings therein for flowing a gas therethrough, a conveyor to support one or more substrates thereon disposed adjacent to the showerhead, and a power source for ionizing the gas. The ionized gas can be a source gas used to deposit a material on the substrate. The deposition profile of the material on the substrate can be adjusted, for example, using a gas-shaping device included in the apparatus. Additionally or alternatively, the deposition profile may be adjusted by using an actuatable showerhead. The method includes exposing a substrate to an ionized gas to deposit a film on the substrate, wherein the ionized gas is influenced with a gas-shaping device to uniformly deposit the film on the substrate as the substrate is conveyed proximate to the showerhead.
摘要翻译： 本文描述了使用线性等离子体源来控制膜沉积的方法和装置。 该装置包括：喷嘴，其中具有用于使气体流过其中的开口;输送机，用于支撑其上邻近喷淋头设置的一个或多个基板;以及用于使气体离子化的电源。 电离气体可以是用于在衬底上沉积材料的源气体。 可以例如使用包括在该装置中的气体整形装置来调节衬底上的材料的沉积轮廓。 附加地或替代地，沉积轮廓可以通过使用可启动喷头来调节。 该方法包括将衬底暴露于电离气体以在衬底上沉积膜，其中当衬底被输送到靠近喷头时，电离气体受到气体整形装置的影响，从而将膜均匀地沉积在衬底上。
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