公开(公告)号：US08425791B2

公开(公告)日：2013-04-23

申请号：US12498703

申请日：2009-07-07

申请人： Chishio Koshimizu ,  Manabu Iwata ,  Tatsuo Matsudo

发明人： Chishio Koshimizu ,  Manabu Iwata ,  Tatsuo Matsudo

IPC分类号： G01L21/30 ,  G01R31/00

CPC分类号： H01J37/32642 ,  H01J37/32522 ,  H01J37/32623

摘要： In a method of controlling the temperature of an in-chamber member used in a plasma processing apparatus that processes a target substrate with plasma, a plurality of power-feeding portions is provided in the in-chamber member and the in-chamber member is heated by supplying electric power thereto through the power-feeding portions. A resistance value or resistivity of the in-chamber member is measured and the electric power is controlled based on the temperature of the in-chamber member estimated from the resistance value or resistivity. The in-chamber member includes one or more annular members arranged around the target substrate. The in-chamber member is a member making contact with plasma within a chamber and existing near the target substrate.

摘要翻译： 在等离子体处理对象基板的等离子体处理装置中使用的室内部件的温度控制方法中，在室内部件中设置有多个供电部，加热室内部件 通过供电部向其供电。 测量室内构件的电阻值或电阻率，并且基于根据电阻值或电阻率估计的室内构件的温度来控制电功率。 腔内构件包括围绕靶基底布置的一个或多个环形构件。 腔内构件是与腔室内的等离子体接触并存在于靶基底附近的构件。

公开(公告)号：US08298371B2

公开(公告)日：2012-10-30

申请号：US12056665

申请日：2008-03-27

申请人： Chishio Koshimizu ,  Naoki Matsumoto ,  Satoshi Tanaka ,  Toru Ito

发明人： Chishio Koshimizu ,  Naoki Matsumoto ,  Satoshi Tanaka ,  Toru Ito

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01J37/21 ,  H01J37/32091 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/32348 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32642 ,  H01J2237/21 ,  H01J2237/334

摘要： A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member.

摘要翻译： 等离子体处理装置包括处理室，第一电极和彼此相对配置的第二电极，用于向第一电极或第二电极施加高频电力的高频电源单元，用于 将处理气体供给到处理空间，以及设置在第一电极的主表面上的基板安装部的主电介质部件。 聚焦环安装在第一电极上以覆盖第一电极的主表面的周边部分，并且在第一电极的主表面的周边部分设置外围电介质构件，使得每单位面积的静电电容 在第一电极和聚焦环之间的距离小于通过主电介质构件施加在第一电极和衬底之间的位置。

公开(公告)号：US20120224603A1

公开(公告)日：2012-09-06

申请号：US13476264

申请日：2012-05-21

申请人： Jun ABE ,  Tatsuo Matsudo ,  Chishio Koshimizu

发明人： Jun ABE ,  Tatsuo Matsudo ,  Chishio Koshimizu

IPC分类号： G01J5/02

CPC分类号： G01J5/02 ,  G01K1/026 ,  G01K11/125

摘要： A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes an attenuator that attenuates the reference beam reflected from the reference beam reflector to thereby make an intensity thereof closer to an intensity of the measurement beam reflected from the temperature measurement object.

摘要翻译： 温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。 温度测量装置还包括衰减器，衰减从参考光束反射器反射的参考光束，从而使其强度更接近于从温度测量对象反射的测量光束的强度。

公开(公告)号：US08251011B2

公开(公告)日：2012-08-28

申请号：US11756097

申请日：2007-05-31

申请人： Yohei Yamazawa ,  Manabu Iwata ,  Chishio Koshimizu ,  Fumihiko Higuchi ,  Akitaka Shimizu ,  Asao Yamashita ,  Nobuhiro Iwama ,  Tsutomu Higashiura ,  DongSheng Zhang ,  Michiko Nakaya ,  Norikazu Murakami

发明人： Yohei Yamazawa ,  Manabu Iwata ,  Chishio Koshimizu ,  Fumihiko Higuchi ,  Akitaka Shimizu ,  Asao Yamashita ,  Nobuhiro Iwama ,  Tsutomu Higashiura ,  DongSheng Zhang ,  Michiko Nakaya ,  Norikazu Murakami

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32174 ,  H01J37/321

摘要： An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.

摘要翻译： 通过使用等离子体在目标基板上进行等离子体处理的装置包括处理室中彼此相对的第一和第二电极。 在第一和第二电极之间形成通过激发将工艺气体转化成等离子体的RF场。 提供RF功率的RF电源通过匹配电路连接到第一或第二电极。 匹配电路自动执行相对于RF功率的输入阻抗匹配。 可变阻抗设定部分通过互连连接到与等离子体电耦合的预定部件。 阻抗设定部分针对从等离子体输入到预定部件的RF分量设置反向阻抗。 控制器将关于反向阻抗的预设值的控制信号提供给阻抗设定部。

公开(公告)号：US20110272097A1

公开(公告)日：2011-11-10

申请号：US13186145

申请日：2011-07-19

申请人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Yoshinobu Ooya ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa ,  Hidetoshi Hanaoka ,  Toshihiro Hayami ,  Hiroki Yamazaki ,  Manabu Sato

发明人： Akira Koshiishi ,  Masaru Sugimoto ,  Kunihiko Hinata ,  Noriyuki Kobayashi ,  Chishio Koshimizu ,  Ryuji Ohtani ,  Kazuo Kibi ,  Masashi Saito ,  Naoki Matsumoto ,  Yoshinobu Ooya ,  Manabu Iwata ,  Daisuke Yano ,  Yohei Yamazawa ,  Hidetoshi Hanaoka ,  Toshihiro Hayami ,  Hiroki Yamazaki ,  Manabu Sato

IPC分类号： C23F1/08

CPC分类号： H01J37/32422 ,  H01J37/32018 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32834 ,  H01J2237/2001 ,  H01J2237/334 ,  H01J2237/3344 ,  H01L21/67069 ,  Y10S156/915

摘要： A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring.

摘要翻译： 等离子体蚀刻装置包括上电极和下电极，在其间产生处理气体的等离子体以在晶片W上进行等离子体蚀刻。该装置还包括设置在晶片周围的冷却环，设置在冷却周围的校正环 环和直接连接到校正环的可变直流电源，所述直流电压被预设为向校正环提供相对于地电位的负偏压，用于吸引等离子体中的离子并将校正环的温度增加到 补偿由于冷却环导致的目标基板的边缘附近的空间的温度的降低。

公开(公告)号：US20110259524A1

公开(公告)日：2011-10-27

申请号：US13177195

申请日：2011-07-06

申请人： Naoki MATSUMOTO ,  Chishio Koshimizu ,  Akira Koshiishi

发明人： Naoki MATSUMOTO ,  Chishio Koshimizu ,  Akira Koshiishi

IPC分类号： H01L21/3065

CPC分类号： H01L21/67069 ,  C23F4/00 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01J2237/334

摘要： A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.

摘要翻译： 等离子体处理装置包括被配置为容纳目标基板并被抽真空的处理容器。 第一电极和第二电极在处理容器内彼此相对设置。 第一电极包括外部部分和面向第二电极的内部部分，使得外部部分围绕内部部分。 RF电源被配置为向第一电极的外部施加RF功率。 DC电源被配置为向第一电极的内部施加DC电压。 处理气体供应单元被配置为将处理气体供应到处理容器中，其中处理气体的等离子体在第一电极和第二电极之间产生。

公开(公告)号：US20110104902A1

公开(公告)日：2011-05-05

申请号：US12913441

申请日：2010-10-27

申请人： Yohei Yamazawa ,  Chishio Koshimizu ,  Kazuki Denpoh ,  Jun Yamawaku ,  Masashi Saito

发明人： Yohei Yamazawa ,  Chishio Koshimizu ,  Kazuki Denpoh ,  Jun Yamawaku ,  Masashi Saito

IPC分类号： H01L21/3065 ,  C23C16/505 ,  H01L21/30 ,  C23C14/34

CPC分类号： H01J37/3211 ,  C23C16/455 ,  C23C16/50 ,  H01J37/321 ,  H01J37/3244 ,  H05H1/46

摘要： A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.

摘要翻译： 一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈形RF天线; 基板支撑单元，设置在处理室中，用于在其上安装待处理的目标基板; 处理气体供应单元，用于将所需的处理气体供应到处理室以对目标基板执行所需的等离子体处理; 以及RF电源单元，用于向RF天线提供RF功率，以通过处理室中的感应耦合产生处理气体的等离子体。 该装置还包括一个浮动线圈，其浮动并布置在处理室外部的位置处，浮动线圈将通过电磁感应与RF天线耦合; 以及设置在浮动线圈的环路中的电容器。

公开(公告)号：US20110000883A1

公开(公告)日：2011-01-06

申请号：US12850391

申请日：2010-08-04

申请人： Shosuke Endoh ,  Noriyuki Iwabuchi ,  Shigeaki Kato ,  Tomoya Okubo ,  Jun Hirose ,  Koichi Nagakura ,  Chishio Koshimizu ,  Kazuki Denpoh

发明人： Shosuke Endoh ,  Noriyuki Iwabuchi ,  Shigeaki Kato ,  Tomoya Okubo ,  Jun Hirose ,  Koichi Nagakura ,  Chishio Koshimizu ,  Kazuki Denpoh

IPC分类号： C23F1/00

CPC分类号： H01L21/67069 ,  H01J37/32082 ,  H01J37/32642 ,  H01L21/6831

摘要： A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.

摘要翻译： 具有聚焦环的等离子体处理装置能够大大提高聚焦环的冷却效率，同时防止其成本增加。 等离子体处理装置由具有静电卡盘和聚焦环的基座构成。 将要进行等离子体处理的晶片W安装在静电卡盘上。 聚焦环具有电介质材料部分和导电材料部分。 介电材料部分形成与静电卡盘接触设置的接触部分。 导电材料部分面对电介质材料部分的静电卡盘。

公开(公告)号：US07829463B2

公开(公告)日：2010-11-09

申请号：US11694126

申请日：2007-03-30

申请人： Naoki Matsumoto ,  Chishio Koshimizu ,  Manabu Iwata ,  Satoshi Tanaka

发明人： Naoki Matsumoto ,  Chishio Koshimizu ,  Manabu Iwata ,  Satoshi Tanaka

IPC分类号： H01L21/44

CPC分类号： H01L21/31116 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32623 ,  H01J37/32706 ,  H01J37/32935

摘要： A plasma processing method performs a desired plasma process on substrates by using a plasma generated in a processing space. A first and a second electrode are disposed in parallel in a processing vessel that is grounded, the substrate is supported on the second electrode to face the first electrode, the processing vessel is vacuum evacuated, a desired processing gas is supplied into the processing space formed between the first electrode, the second electrode and a sidewall of the processing vessel, and a first radio frequency power is supplied to the second electrode. The first electrode is connected to the processing vessel via an insulator or a space, and is electrically coupled to a ground potential via a capacitance varying unit whose electrostatic capacitance is varied based on a process condition of the plasma process performed on the substrate.

摘要翻译： 等离子体处理方法通过使用在处理空间中产生的等离子体在衬底上进行所需的等离子体处理。 第一电极和第二电极平行放置在接地的处理容器中，基板被支撑在第二电极上以面对第一电极，处理容器被真空抽真空，所需的处理气体被供应到形成的处理空间 在第一电极，第二电极和处理容器的侧壁之间，并且向第二电极提供第一射频功率。 第一电极经由绝缘体或空间连接到处理容器，并且经由静电电容根据在衬底上进行的等离子体处理的工艺条件而变化的电容变化单元电耦合到接地电位。

公开(公告)号：US20100243162A1

公开(公告)日：2010-09-30

申请号：US12749874

申请日：2010-03-30

申请人： Chishio Koshimizu

发明人： Chishio Koshimizu

IPC分类号： C23F1/00

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32935

摘要： A uniformity of plasma density in a target object surface and plasma processing characteristics can be improved. A plasma processing apparatus 10 includes: a processing chamber 100 in which a plasma process is performed on a wafer W; a first high frequency power supply 140 configured to output a high frequency power; a high frequency antenna 120 including an outer coil, an inner coil and n (n is an integer equal to or greater than 1) number of intermediate coil(s) that are concentrically wound about a central axis outside the processing chamber 100; and a dielectric window 105 provided at a part of a wall of the processing chamber 100 and configured to introduce electromagnetic field energy generated from the high frequency antenna 120 into the processing chamber 100.

摘要翻译： 可以提高目标物体表面中的等离子体密度的均匀性和等离子体处理特性。 等离子体处理装置10包括：处理室100，其中在晶片W上执行等离子体处理; 配置为输出高频功率的第一高频电源140; 包括外部线圈，内部线圈和n（n是等于或大于1的整数）的高频天线120在处理室100外部围绕中心轴线同心缠绕的中间线圈的数量; 以及设置在处理室100的壁的一部分处并且被配置为将从高频天线120产生的电磁场能量引入处理室100中的电介质窗口105。